KR102412341B1 - 기판 후면 보호 - Google Patents

기판 후면 보호 Download PDF

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Publication number
KR102412341B1
KR102412341B1 KR1020227001450A KR20227001450A KR102412341B1 KR 102412341 B1 KR102412341 B1 KR 102412341B1 KR 1020227001450 A KR1020227001450 A KR 1020227001450A KR 20227001450 A KR20227001450 A KR 20227001450A KR 102412341 B1 KR102412341 B1 KR 102412341B1
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KR
South Korea
Prior art keywords
substrate
support
susceptor
substrate processing
reaction chamber
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Application number
KR1020227001450A
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English (en)
Korean (ko)
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KR20220010073A (ko
Inventor
니클라스 홀름
유하나 코스타모
마르코 푸다스
Original Assignee
피코순 오와이
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Publication of KR20220010073A publication Critical patent/KR20220010073A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H01L21/6719—
    • H01L21/67748—
    • H01L21/68735—
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020227001450A 2019-06-25 2019-06-25 기판 후면 보호 Active KR102412341B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2019/050492 WO2020260742A1 (en) 2019-06-25 2019-06-25 Substrate backside protection

Publications (2)

Publication Number Publication Date
KR20220010073A KR20220010073A (ko) 2022-01-25
KR102412341B1 true KR102412341B1 (ko) 2022-06-23

Family

ID=74060031

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227001450A Active KR102412341B1 (ko) 2019-06-25 2019-06-25 기판 후면 보호

Country Status (6)

Country Link
EP (1) EP3990680A4 (https=)
JP (2) JP7300527B2 (https=)
KR (1) KR102412341B1 (https=)
CN (1) CN114026268A (https=)
TW (1) TWI762931B (https=)
WO (1) WO2020260742A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853316B (zh) * 2020-12-31 2023-03-14 拓荆科技股份有限公司 镀膜装置及其承载座
FI130020B (en) 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130543B (en) * 2021-08-13 2023-11-08 Beneq Oy An atomic layer deposition apparatus and method

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JP2002534786A (ja) 1999-01-04 2002-10-15 ジエヌス・インコーポレイテツド 原子層成長プロセスのための処理チャンバ
KR101557590B1 (ko) 2014-08-19 2015-10-05 주식회사 엘지실트론 에피택셜 성장장치 및 이를 이용한 에피택셜 성장방법

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US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
JP3234091B2 (ja) * 1994-03-10 2001-12-04 株式会社日立製作所 表面処理装置
JPH08191097A (ja) * 1995-01-11 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH0927538A (ja) * 1995-07-13 1997-01-28 Sharp Corp 四隅が支持されて持ち上げられた基板のたわみ軽減方法および枚葉式基板処理装置
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6096135A (en) 1998-07-21 2000-08-01 Applied Materials, Inc. Method and apparatus for reducing contamination of a substrate in a substrate processing system
JP2003197532A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp エピタキシャル成長方法及びエピタキシャル成長用サセプター
JP4200844B2 (ja) * 2003-08-11 2008-12-24 東京エレクトロン株式会社 熱処理装置
KR101196197B1 (ko) * 2004-01-20 2012-11-02 주성엔지니어링(주) 기판 지지부재, 이를 포함하는 증착 장치 및 이를 이용한기판의 이송 방법
JP2006080148A (ja) * 2004-09-07 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
KR20080092766A (ko) * 2007-04-13 2008-10-16 (주)소슬 기판 지지대 및 이를 구비하는 플라즈마 처리 장치
JP5195370B2 (ja) * 2008-12-05 2013-05-08 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
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JP2002534786A (ja) 1999-01-04 2002-10-15 ジエヌス・インコーポレイテツド 原子層成長プロセスのための処理チャンバ
KR101557590B1 (ko) 2014-08-19 2015-10-05 주식회사 엘지실트론 에피택셜 성장장치 및 이를 이용한 에피택셜 성장방법

Also Published As

Publication number Publication date
JP2022531622A (ja) 2022-07-07
TWI762931B (zh) 2022-05-01
KR20220010073A (ko) 2022-01-25
EP3990680A4 (en) 2023-01-11
EP3990680A1 (en) 2022-05-04
WO2020260742A1 (en) 2020-12-30
CN114026268A (zh) 2022-02-08
JP2023085420A (ja) 2023-06-20
JP7300527B2 (ja) 2023-06-29
TW202101544A (zh) 2021-01-01

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