JP7300527B2 - 基板の裏面保護 - Google Patents

基板の裏面保護 Download PDF

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Publication number
JP7300527B2
JP7300527B2 JP2021576430A JP2021576430A JP7300527B2 JP 7300527 B2 JP7300527 B2 JP 7300527B2 JP 2021576430 A JP2021576430 A JP 2021576430A JP 2021576430 A JP2021576430 A JP 2021576430A JP 7300527 B2 JP7300527 B2 JP 7300527B2
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Japan
Prior art keywords
substrate
support
susceptor
reaction chamber
interface
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JP2021576430A
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English (en)
Japanese (ja)
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JP2022531622A (ja
JP2022531622A5 (https=
Inventor
ニクラス ホルム
ユハナ コスタモ
マルコ プダス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Picosun Oy
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Picosun Oy
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Publication date
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Publication of JP2022531622A publication Critical patent/JP2022531622A/ja
Publication of JP2022531622A5 publication Critical patent/JP2022531622A5/ja
Priority to JP2023059904A priority Critical patent/JP2023085420A/ja
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Publication of JP7300527B2 publication Critical patent/JP7300527B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2021576430A 2019-06-25 2019-06-25 基板の裏面保護 Active JP7300527B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023059904A JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2019/050492 WO2020260742A1 (en) 2019-06-25 2019-06-25 Substrate backside protection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023059904A Division JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Publications (3)

Publication Number Publication Date
JP2022531622A JP2022531622A (ja) 2022-07-07
JP2022531622A5 JP2022531622A5 (https=) 2022-11-14
JP7300527B2 true JP7300527B2 (ja) 2023-06-29

Family

ID=74060031

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021576430A Active JP7300527B2 (ja) 2019-06-25 2019-06-25 基板の裏面保護
JP2023059904A Pending JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023059904A Pending JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Country Status (6)

Country Link
EP (1) EP3990680A4 (https=)
JP (2) JP7300527B2 (https=)
KR (1) KR102412341B1 (https=)
CN (1) CN114026268A (https=)
TW (1) TWI762931B (https=)
WO (1) WO2020260742A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853316B (zh) * 2020-12-31 2023-03-14 拓荆科技股份有限公司 镀膜装置及其承载座
FI130020B (en) 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130543B (en) * 2021-08-13 2023-11-08 Beneq Oy An atomic layer deposition apparatus and method

Citations (2)

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JP2010135598A (ja) 2008-12-05 2010-06-17 Sumco Corp エピタキシャルウェーハの製造方法
WO2018146370A1 (en) 2017-02-08 2018-08-16 Picosun Oy Deposition or cleaning apparatus with movable structure and method of operation

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JP3234091B2 (ja) * 1994-03-10 2001-12-04 株式会社日立製作所 表面処理装置
JPH08191097A (ja) * 1995-01-11 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH0927538A (ja) * 1995-07-13 1997-01-28 Sharp Corp 四隅が支持されて持ち上げられた基板のたわみ軽減方法および枚葉式基板処理装置
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US6096135A (en) 1998-07-21 2000-08-01 Applied Materials, Inc. Method and apparatus for reducing contamination of a substrate in a substrate processing system
JP2003197532A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp エピタキシャル成長方法及びエピタキシャル成長用サセプター
JP4200844B2 (ja) * 2003-08-11 2008-12-24 東京エレクトロン株式会社 熱処理装置
KR101196197B1 (ko) * 2004-01-20 2012-11-02 주성엔지니어링(주) 기판 지지부재, 이를 포함하는 증착 장치 및 이를 이용한기판의 이송 방법
JP2006080148A (ja) * 2004-09-07 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
KR20080092766A (ko) * 2007-04-13 2008-10-16 (주)소슬 기판 지지대 및 이를 구비하는 플라즈마 처리 장치
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JP5604907B2 (ja) * 2010-02-25 2014-10-15 信越半導体株式会社 気相成長用半導体基板支持サセプタおよびエピタキシャルウェーハ製造装置およびエピタキシャルウェーハの製造方法
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RU2620230C2 (ru) * 2012-11-23 2017-05-23 Пикосан Ой Способ загрузки подложки в реактор асо
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Publication number Priority date Publication date Assignee Title
JP2010135598A (ja) 2008-12-05 2010-06-17 Sumco Corp エピタキシャルウェーハの製造方法
WO2018146370A1 (en) 2017-02-08 2018-08-16 Picosun Oy Deposition or cleaning apparatus with movable structure and method of operation

Also Published As

Publication number Publication date
JP2022531622A (ja) 2022-07-07
TWI762931B (zh) 2022-05-01
KR102412341B1 (ko) 2022-06-23
KR20220010073A (ko) 2022-01-25
EP3990680A4 (en) 2023-01-11
EP3990680A1 (en) 2022-05-04
WO2020260742A1 (en) 2020-12-30
CN114026268A (zh) 2022-02-08
JP2023085420A (ja) 2023-06-20
TW202101544A (zh) 2021-01-01

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