TWI757242B - 用於晶圓處理系統的熱管理系統及方法 - Google Patents

用於晶圓處理系統的熱管理系統及方法 Download PDF

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Publication number
TWI757242B
TWI757242B TW105124590A TW105124590A TWI757242B TW I757242 B TWI757242 B TW I757242B TW 105124590 A TW105124590 A TW 105124590A TW 105124590 A TW105124590 A TW 105124590A TW I757242 B TWI757242 B TW I757242B
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TW
Taiwan
Prior art keywords
puck
wafer
cylindrical
radius
thermal
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TW105124590A
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English (en)
Chinese (zh)
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TW201712790A (zh
Inventor
大衛 班傑明森
迪米奇 路柏曼斯基
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美商應用材料股份有限公司
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Priority claimed from US14/820,422 external-priority patent/US9691645B2/en
Priority claimed from US14/820,365 external-priority patent/US9741593B2/en
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201712790A publication Critical patent/TW201712790A/zh
Application granted granted Critical
Publication of TWI757242B publication Critical patent/TWI757242B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
TW105124590A 2015-08-06 2016-08-03 用於晶圓處理系統的熱管理系統及方法 TWI757242B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/820,422 US9691645B2 (en) 2015-08-06 2015-08-06 Bolted wafer chuck thermal management systems and methods for wafer processing systems
US14/820,365 US9741593B2 (en) 2015-08-06 2015-08-06 Thermal management systems and methods for wafer processing systems
US14/820,422 2015-08-06
US14/820,365 2015-08-06

Publications (2)

Publication Number Publication Date
TW201712790A TW201712790A (zh) 2017-04-01
TWI757242B true TWI757242B (zh) 2022-03-11

Family

ID=57944032

Family Applications (4)

Application Number Title Priority Date Filing Date
TW105124570A TWI703671B (zh) 2015-08-06 2016-08-03 螺接式晶圓夾具熱管理系統及用於晶圓處理系統的方法
TW109125270A TWI808334B (zh) 2015-08-06 2016-08-03 工件握持器
TW111104729A TW202224081A (zh) 2015-08-06 2016-08-03 用於晶圓處理系統的熱管理系統及方法
TW105124590A TWI757242B (zh) 2015-08-06 2016-08-03 用於晶圓處理系統的熱管理系統及方法

Family Applications Before (3)

Application Number Title Priority Date Filing Date
TW105124570A TWI703671B (zh) 2015-08-06 2016-08-03 螺接式晶圓夾具熱管理系統及用於晶圓處理系統的方法
TW109125270A TWI808334B (zh) 2015-08-06 2016-08-03 工件握持器
TW111104729A TW202224081A (zh) 2015-08-06 2016-08-03 用於晶圓處理系統的熱管理系統及方法

Country Status (5)

Country Link
JP (4) JP6925977B2 (ja)
KR (4) KR102631838B1 (ja)
CN (4) CN107533999B (ja)
TW (4) TWI703671B (ja)
WO (2) WO2017024132A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276590B2 (en) * 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10535549B2 (en) * 2017-10-27 2020-01-14 Applied Materials, Inc. Lift pin holder
KR20200023988A (ko) 2018-08-27 2020-03-06 삼성전자주식회사 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치
KR102460313B1 (ko) * 2018-12-13 2022-10-28 주식회사 원익아이피에스 기판 처리 장치의 서셉터 및 기판 처리 장치
JP7254542B2 (ja) * 2019-02-01 2023-04-10 東京エレクトロン株式会社 載置台及び基板処理装置
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
JP2022047847A (ja) * 2020-09-14 2022-03-25 株式会社Kelk ウェーハの温度調節装置
CN115371366B (zh) * 2022-08-22 2024-05-28 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 刚性转架装置及其安装工艺和载片刚性转架

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
TWI338931B (en) * 2003-06-30 2011-03-11 Lam Res Corp Substrate support having dynamic temperature control
US8336188B2 (en) * 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
TWI404163B (zh) * 2004-10-13 2013-08-01 Lam Res Corp 用於改良式半導體處理均勻性之熱傳導系統、用於處理一基板之電漿處理系統以及在一處理腔室中處理一基板之方法
US20140209245A1 (en) * 2013-01-31 2014-07-31 Tokyo Electron Limited Mounting table and plasma processing apparatus

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133721A (ja) * 1985-12-05 1987-06-16 Anelva Corp 基体ホルダ−
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
EP1248293A1 (en) * 2000-07-25 2002-10-09 Ibiden Co., Ltd. Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP3742349B2 (ja) 2002-02-15 2006-02-01 株式会社日立製作所 プラズマ処理装置
JP2003243490A (ja) 2002-02-18 2003-08-29 Hitachi High-Technologies Corp ウエハ処理装置とウエハステージ及びウエハ処理方法
JP2004200156A (ja) 2002-12-05 2004-07-15 Ibiden Co Ltd 金属ヒータ
JP2004296254A (ja) * 2003-03-27 2004-10-21 Sumitomo Electric Ind Ltd セラミックスヒータおよびそれを搭載した半導体あるいは液晶製造装置
US7361865B2 (en) * 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
JP2006080148A (ja) * 2004-09-07 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP4908021B2 (ja) * 2005-03-07 2012-04-04 日本特殊陶業株式会社 静電チャック、静電チャック装置、静電チャックの製造方法、真空チャック、真空チャック装置、真空チャックの製造方法、セラミックヒーター、セラミックヒーター装置、及びセラミックヒーターの製造方法
JP4783213B2 (ja) 2005-06-09 2011-09-28 日本碍子株式会社 静電チャック
JP4052343B2 (ja) * 2006-02-08 2008-02-27 Ｔｏｔｏ株式会社 静電チャック
CN2917466Y (zh) * 2006-03-10 2007-07-04 宁波新大陆电器有限公司 保温盘
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
WO2007126228A1 (en) * 2006-04-28 2007-11-08 Dansung Electron Co., Ltd. Manufacturing method for susceptor and susceptor using this method
US9275887B2 (en) * 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7297894B1 (en) * 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
KR101526615B1 (ko) * 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
JP5367232B2 (ja) * 2007-03-29 2013-12-11 株式会社日本セラテック セラミックスヒーター
KR20090001685A (ko) * 2007-05-10 2009-01-09 (주) 컴파스 시스템 컴퓨터 신호에 따른 화상을 화면에 출력하는 광고장치 및이에 적합한 광고 방법
JP4438008B2 (ja) * 2007-06-29 2010-03-24 東京エレクトロン株式会社 基板処理装置
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
US20090086400A1 (en) * 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
CN102160167B (zh) * 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8633423B2 (en) * 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
US8475103B2 (en) * 2010-12-09 2013-07-02 Hamilton Sundstand Corporation Sealing washer assembly for large diameter holes on flat surfaces
WO2012128348A1 (ja) * 2011-03-23 2012-09-27 住友大阪セメント株式会社 静電チャック装置
WO2013033315A2 (en) * 2011-09-01 2013-03-07 Veeco Instruments Inc. Wafer carrier with thermal features
JP6017781B2 (ja) * 2011-12-07 2016-11-02 新光電気工業株式会社 基板温調固定装置及びその製造方法
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US8974164B2 (en) * 2012-06-26 2015-03-10 Newfrey Llc Plastic high heat fastener
JP6001402B2 (ja) 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
CN103794538B (zh) * 2012-10-31 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
US9520315B2 (en) 2013-12-31 2016-12-13 Applied Materials, Inc. Electrostatic chuck with internal flow adjustments for improved temperature distribution
US9622375B2 (en) * 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
KR20180001685A (ko) * 2016-06-27 2018-01-05 세메스 주식회사 기판 지지체 및 이를 갖는 베이크 유닛

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
TWI338931B (en) * 2003-06-30 2011-03-11 Lam Res Corp Substrate support having dynamic temperature control
TWI404163B (zh) * 2004-10-13 2013-08-01 Lam Res Corp 用於改良式半導體處理均勻性之熱傳導系統、用於處理一基板之電漿處理系統以及在一處理腔室中處理一基板之方法
US8336188B2 (en) * 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
US20140209245A1 (en) * 2013-01-31 2014-07-31 Tokyo Electron Limited Mounting table and plasma processing apparatus

Also Published As

Publication number Publication date
WO2017024132A1 (en) 2017-02-09
KR20180028401A (ko) 2018-03-16
CN107533999B (zh) 2022-03-15
KR20240015747A (ko) 2024-02-05
JP7250076B2 (ja) 2023-03-31
CN114566458A (zh) 2022-05-31
JP2021185605A (ja) 2021-12-09
JP7376623B2 (ja) 2023-11-08
TWI703671B (zh) 2020-09-01
JP7014607B2 (ja) 2022-02-01
TW201712798A (zh) 2017-04-01
KR102652012B1 (ko) 2024-03-27
KR20240045352A (ko) 2024-04-05
JP2018523913A (ja) 2018-08-23
CN113851419A (zh) 2021-12-28
KR20180028400A (ko) 2018-03-16
JP2022064922A (ja) 2022-04-26
TWI808334B (zh) 2023-07-11
KR102631838B1 (ko) 2024-01-30
JP6925977B2 (ja) 2021-08-25
WO2017024127A1 (en) 2017-02-09
CN107484433A (zh) 2017-12-15
CN107484433B (zh) 2021-10-08
CN107533999A (zh) 2018-01-02
TW201712790A (zh) 2017-04-01
TW202224081A (zh) 2022-06-16
JP2018525808A (ja) 2018-09-06
TW202111858A (zh) 2021-03-16

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