TWI756384B - 用於大量轉移微型led的方法及製程 - Google Patents

用於大量轉移微型led的方法及製程 Download PDF

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Publication number
TWI756384B
TWI756384B TW107108834A TW107108834A TWI756384B TW I756384 B TWI756384 B TW I756384B TW 107108834 A TW107108834 A TW 107108834A TW 107108834 A TW107108834 A TW 107108834A TW I756384 B TWI756384 B TW I756384B
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Taiwan
Prior art keywords
micro
substrate
leds
led
wafers
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TW107108834A
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English (en)
Chinese (zh)
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TW201840015A (zh
Inventor
提摩西詹姆士 歐斯禮
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美商康寧公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Die Bonding (AREA)
TW107108834A 2017-03-16 2018-03-15 用於大量轉移微型led的方法及製程 TWI756384B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762472121P 2017-03-16 2017-03-16
US62/472,121 2017-03-16

Publications (2)

Publication Number Publication Date
TW201840015A TW201840015A (zh) 2018-11-01
TWI756384B true TWI756384B (zh) 2022-03-01

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Family Applications (1)

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TW107108834A TWI756384B (zh) 2017-03-16 2018-03-15 用於大量轉移微型led的方法及製程

Country Status (5)

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JP (1) JP7045390B2 (fr)
KR (1) KR102478137B1 (fr)
CN (1) CN110462834B (fr)
TW (1) TWI756384B (fr)
WO (1) WO2018170352A1 (fr)

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CN110034224A (zh) * 2019-04-26 2019-07-19 中国科学院长春光学精密机械与物理研究所 一种基于条形Micro-LED的转印方法
CN110112172B (zh) * 2019-05-22 2021-06-22 南京大学 基于氮化镓纳米孔阵列/量子点混合结构的全色微米led显示芯片及其制备方法
EP3985744A4 (fr) 2019-06-13 2023-01-25 BOE Technology Group Co., Ltd. Procédé et système de transfert de masse pour microdiode électroluminescente
DE102019134756A1 (de) * 2019-12-17 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer beleuchtungsvorrichtung
US20230207750A1 (en) * 2020-04-13 2023-06-29 Lg Electronics Inc. Display apparatus and manufacturing method therefor, and multi-screen display apparatus using same
CN111477651A (zh) * 2020-04-16 2020-07-31 广东工业大学 一种基于液晶光闸掩膜的巨量转移方法及转移装置
CN112992720B (zh) * 2020-07-22 2022-04-29 重庆康佳光电技术研究院有限公司 微发光二极管芯片巨量转移方法及系统
KR20230047384A (ko) * 2020-08-06 2023-04-07 뷰리얼 인크. 마이크로 디바이스 블록 이송
JP7300785B2 (ja) * 2021-05-28 2023-06-30 東北マイクロテック株式会社 整列トレイ、整列装置、及び整列方法
WO2023244686A1 (fr) * 2022-06-15 2023-12-21 Lumileds Llc Dispositif d'affichage transparent bidirectionnel

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US20150216042A1 (en) * 2012-05-25 2015-07-30 LuxVue Technology Corporation Micro device transfer head array
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WO2016100662A1 (fr) * 2014-12-19 2016-06-23 Glo Ab Réseau de diodes électroluminescentes sur un fond de panier et son procédé de fabrication
TW201635482A (zh) * 2015-03-18 2016-10-01 英特爾股份有限公司 由微太陽能電池供電的微發光二極體（ｌｅｄ）顯示器

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US20130130440A1 (en) * 2011-11-18 2013-05-23 Hsin-Hua Hu Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US20150216042A1 (en) * 2012-05-25 2015-07-30 LuxVue Technology Corporation Micro device transfer head array
TW201611235A (zh) * 2014-06-18 2016-03-16 艾克斯瑟樂普林特有限公司 微組裝發光二極體顯示器及照明元件
WO2016100662A1 (fr) * 2014-12-19 2016-06-23 Glo Ab Réseau de diodes électroluminescentes sur un fond de panier et son procédé de fabrication
TW201635482A (zh) * 2015-03-18 2016-10-01 英特爾股份有限公司 由微太陽能電池供電的微發光二極體（ｌｅｄ）顯示器

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Publication number Publication date
JP7045390B2 (ja) 2022-03-31
TW201840015A (zh) 2018-11-01
WO2018170352A1 (fr) 2018-09-20
KR102478137B1 (ko) 2022-12-15
CN110462834B (zh) 2023-09-19
CN110462834A (zh) 2019-11-15
JP2020514817A (ja) 2020-05-21
KR20190121393A (ko) 2019-10-25

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