WO2020258644A1 - Procédé de transfert de puce de microdel - Google Patents

Procédé de transfert de puce de microdel Download PDF

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Publication number
WO2020258644A1
WO2020258644A1 PCT/CN2019/115953 CN2019115953W WO2020258644A1 WO 2020258644 A1 WO2020258644 A1 WO 2020258644A1 CN 2019115953 W CN2019115953 W CN 2019115953W WO 2020258644 A1 WO2020258644 A1 WO 2020258644A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
wafer
microled
microleds
electrodes
Prior art date
Application number
PCT/CN2019/115953
Other languages
English (en)
Chinese (zh)
Inventor
樊勇
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020258644A1 publication Critical patent/WO2020258644A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • This application relates to the field of display technology, and in particular to a method for transferring MicroLED chips.
  • the entire surface of the ACF glue 3' is attached to the TFT substrate 4'.
  • the MicroLED 6' is transferred, the MicroLED 6'is bonded to the TFT by pressure and heating.
  • the electrode 2'of the MicroLED and the electrode 5'of the TFT are aligned.
  • the bonding area of the MicroLED 6'and the TFT substrate 4' only occupies a small part of the pixel display area, and this method requires the ACF glue 3'containing conductive particles 31' to be spread on the entire surface of the TFT substrate 4'. Therefore, this method obviously wastes a lot of materials.
  • the unevenness of the TFT substrate 4' may also cause contamination of the indenter.
  • a method for mass transfer of electronic components as disclosed in the publication number CN107768487A is further proposed in the art. This method first provides wafers and electronic components arranged in a matrix on the surface of the substrate. Next, the wafer is attached to the temporary fixing layer. Subsequently, the wafer is diced so that the wafer is formed into multiple plates. Each board includes at least some electronic components and sub-substrates. The temporary fixing layer is expanded so that the plates on the temporary fixing layer separate from each other as the temporary fixing layer expands.
  • each of the predetermined bonding portions is transferred to the carrier substrate in stages, so that the electronic components in the predetermined bonding portion are bonded to the carrier substrate. Finally, remove the sub-substrates of these plates.
  • the purpose of this application is to provide a MicroLED transfer method with pre-glued ACF. It can not only save the amount of ACF glue used, but also avoid the pollution of the indenter caused by uneven TFT.
  • a method for transferring MicroLED chips which includes the following steps:
  • the wafer includes a substrate and MicroLED chips arranged on the surface of the substrate, and a metal electrode is formed on the MicroLED chip, and ACF glue is glued on the electrode side of the MicroLED chip; wherein, the wafer
  • the substrate is a sapphire substrate, a gallium nitride substrate, an aluminum nitride substrate, a silicon substrate, a gallium arsenide substrate, or a silicon carbide substrate;
  • S4 Dissolve the MicroLED chip from the temporary substrate, transfer the MicroLED chip to the TFT substrate, and align the electrodes of the MicroLED with the electrodes of the TFT; and then heat and pressure the pressure head to make the electrodes of the MicroLED and the TFT Sexual connection; wherein, the MicroLED chip and the temporary substrate are debonded by ultraviolet light irradiation.
  • step S3 a 266 nm laser is irradiated on the wafer substrate to peel off the wafer substrate.
  • step S1 the wafer fabrication of MicroLEDs follows the following steps: First, various crystal layers of MicroLED are prepared on the wafer substrate by metal organic chemical vapor deposition equipment, including: GaN buffer layer/n Type GaN, multi-quantum well layer light-emitting layer/P-type GaN; then form an ITO current spreading layer and a metal electrode layer on the wafer, and fabricate electrodes through an inductively coupled plasma etching process to obtain MicroLEDs wafers with electrodes.
  • metal organic chemical vapor deposition equipment including: GaN buffer layer/n Type GaN, multi-quantum well layer light-emitting layer/P-type GaN; then form an ITO current spreading layer and a metal electrode layer on the wafer, and fabricate electrodes through an inductively coupled plasma etching process to obtain MicroLEDs wafers with electrodes.
  • a method for transferring MicroLED chips is provided.
  • ACF glue containing conductive particles is pre-attached to the MicroLED wafer, and then the MicroLED chip is transferred to the TFT substrate to make the electrodes of the MicroLED and the TFT The electrodes are aligned, and then the electrodes of the MicroLED and the electrodes of the TFT are electrically connected by heating and pressing the indenter.
  • the ACF glue is only located on the lower surface of the MicroLEDs wafer, which can avoid the phenomenon of non-LED bonding due to uneven TFT substrates, thereby contaminating the indenter.
  • the transfer method includes the following specific steps:
  • One of the wafers includes a substrate and MicroLED chips arranged on the surface of the substrate.
  • the MicroLED chips form metal electrodes, and ACF glue is glued on the electrode side of the MicroLED chips;
  • S4 Dissolve the MicroLED chip from the temporary substrate, and transfer the MicroLED chip to the TFT substrate.
  • the anisotropic conductive film is formed on the wafer (chip) first, and then dicing is performed to obtain the MicroLED chip structure with the ACF film, and the subsequent transfer step is performed.
  • the wafer substrate is a sapphire substrate.
  • the wafer substrate is a gallium nitride substrate.
  • the wafer substrate is an aluminum nitride substrate.
  • the wafer substrate is a silicon substrate.
  • the wafer substrate is a gallium arsenide substrate.
  • the wafer substrate is a silicon carbide substrate.
  • the stripping of the wafer substrate of MicroLEDs is achieved by irradiating a laser on the side of the wafer substrate to achieve the stripping of the wafer substrate.
  • the temporary substrate is debonded by ultraviolet light irradiation.
  • the wafer in the above-mentioned step of debonding the MicroLED chip and the temporary substrate, is 2 inches or 4 inches.
  • the MicroLED transfer method of the present invention by gluing the ACF glue on the electrode side of the MicroLED chip before bonding the MicroLEDs wafer and the temporary substrate, the amount of ACF glue used can be greatly saved, and the utilization rate of ACF materials can be improved. Avoid waste of materials.
  • the ACF is only located on the lower surface of the MicroLED, it is possible to avoid contamination of the indenter due to uneven terrain of the TFT.
  • FIG. 1 is a schematic diagram of the structure of the MicroLED transferred to the TFT substrate in the prior art
  • FIG. 2 is a schematic flowchart of a MicroLED transfer method according to an embodiment of the present invention.
  • 3A to 3E are schematic diagrams of corresponding structures in the step flow of the MicroLED transfer method shown in FIG. 2.
  • FIG. 2 is a schematic flow diagram of the MicroLED transfer method described in this application;
  • FIGS. 3A to 3E are structural schematic diagrams corresponding to the step flow of the MicroLED transfer method shown in FIG. 2.
  • a method for transferring MicroLEDs including: Step S1: a step of fabricating a MicroLEDs wafer: step S2: a step of bonding the MicroLEDs wafer 1 to a temporary substrate: step S3 : The step of peeling off the wafer substrate of the MicroLEDs; and, step S4: the step of obtaining the MicroLED chip.
  • a MicroLEDs wafer 1 is first fabricated on a substrate S, and electrodes 2 for forming MicroLED chips are provided on the MicroLEDs wafer 1. Subsequently, the ACF glue 3 is glued on the electrode 2.
  • the MicroLEDs wafer 1 is 2 inches or 4 inches, but the invention is not limited to the size of the wafer 1.
  • the substrate S of the MicroLEDs wafer 1 may be, for example, a sapphire substrate (Sapphire Substrate), a gallium nitride substrate (Gallium Nitride Substrate), aluminum nitride substrate (Aluminum Nitride Substrate), silicon substrate (Silicon Substrate), gallium arsenide substrate (Gallium Arsenide Substrate) or silicon carbide substrate (Silicon Carbide Substrate) and so on.
  • a sapphire substrate is used.
  • the manufacturing process of the MicroLEDs wafer 1 includes: first, various crystal layers of MicroLEDs, such as GaN, are prepared on a sapphire (Al2O3) substrate by metal organic chemical vapor deposition equipment. Buffer layer/n-type GaN, multi-quantum well layer (MQW) light-emitting layer/P-type GaN; then an ITO current spreading layer and a metal electrode layer are formed on the wafer, and electrodes are made by ICP (inductively coupled plasma etching) process. Finally, as shown in FIG. 3A, a MicroLEDs wafer 1 with electrodes 2 is obtained, and after the fabrication of the MicroLEDs wafer 1 with electrodes is completed, the ACF glue 3 is glued on the electrode 2 side.
  • MicroLEDs wafer 1 with electrodes 2 is obtained, and after the fabrication of the MicroLEDs wafer 1 with electrodes is completed, the ACF glue 3 is glued on the electrode 2 side.
  • the MicroLEDs wafer 1 is bonded to the temporary substrate 7 through the ACF glue 3 side.
  • the substrate S is irradiated with a 266nm laser to vaporize the GaN at the interface between the substrate S and GaN, thereby peeling off the substrate S .
  • Laser Lift-Off the substrate S is irradiated with a 266nm laser to vaporize the GaN at the interface between the substrate S and GaN, thereby peeling off the substrate S .
  • FIG. 3C only the MicroLEDs wafer 1 with electrodes 2 is adhered to the temporary substrate 7 by the ACF glue 3, and the substrate S is not.
  • the MicroLEDs wafer 1 is cut into a plurality of MicroLED chips 6 by cutting. At this time, all the MicroLED chips 6 are bonded to the temporary substrate 7 through the ACF glue 3. And, as shown in FIG. 3D, the ACF glue 3 is also cut together.
  • the MicroLED chip and the temporary substrate are irradiated by ultraviolet light to de-glue, and then the MicroLED chip 6 can be removed from the temporary substrate 7 by the transfer head of the transfer device. Take and place on a TFT substrate 4.
  • the electrode 2 of the MicroLED chip 6 is aligned with the electrode 5 of a TFT substrate 4 using the ACF glue 3, and then the electrodes 2 of the MicroLED chip 6 are aligned with the electrode 5 of a TFT substrate 4 by heating and pressing the indenter.
  • the electrodes 5 on the TFT substrate 4 are electrically connected.
  • MicroLED in this article refers to LEDs with a size less than 100um, also known as uLED;
  • ACF refers to anisotropic conductive film, which is Anisotropic Abbreviation for Conductive Film.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de transfert de puce de microDEL comprenant : l'adhésion préalable d'un adhésif ACF à une tranche de microDEL, puis le transfert d'une puce de microDEL vers un substrat de transistor à film mince (TFT), de sorte que l'électrode de la microDEL soit alignée avec l'électrode du TFT ; l'électrode de la microDEL est connectée électriquement à l'électrode du TFT par chauffage et pression d'une tête de pression. Le procédé de la présente invention peut économiser la quantité utilisée d'adhésif ACF et éviter également la contamination de la tête de pression due à une irrégularité du TFT.
PCT/CN2019/115953 2019-06-24 2019-11-06 Procédé de transfert de puce de microdel WO2020258644A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910551624.5A CN110335845B (zh) 2019-06-24 2019-06-24 一种MicroLED芯片的转移方法
CN201910551624.5 2019-06-24

Publications (1)

Publication Number Publication Date
WO2020258644A1 true WO2020258644A1 (fr) 2020-12-30

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CN (1) CN110335845B (fr)
WO (1) WO2020258644A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110335845B (zh) * 2019-06-24 2021-10-01 深圳市华星光电半导体显示技术有限公司 一种MicroLED芯片的转移方法
CN112188663B (zh) * 2020-09-17 2022-11-04 Oppo（重庆）智能科技有限公司 呼吸灯模组、电子设备及其制备方法

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CN107026124A (zh) * 2014-11-27 2017-08-08 广州硅芯电子科技有限公司 制造微型led显示器的方法和微型led显示器
CN107768487A (zh) * 2016-08-18 2018-03-06 新世纪光电股份有限公司 巨量转移电子元件的方法
CN108428638A (zh) * 2018-02-12 2018-08-21 友达光电股份有限公司 发光二极管的检测方法
US10181507B2 (en) * 2014-09-25 2019-01-15 X-Celeprint Limited Display tile structure and tiled display
CN110335845A (zh) * 2019-06-24 2019-10-15 深圳市华星光电半导体显示技术有限公司 一种MicroLED芯片的转移方法

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US10468361B2 (en) * 2015-08-27 2019-11-05 Mikro Mesa Technology Co., Ltd. Method of manufacturing light emitting diodes having a supporting layer attached to temporary adhesive
CN106229287B (zh) * 2016-09-30 2019-04-05 厦门市三安光电科技有限公司 用于转移微元件的转置头及微元件的转移方法
KR20180092056A (ko) * 2017-02-08 2018-08-17 한국광기술원 마이크로 led칩 분리 및 전사방법
TWI634371B (zh) * 2017-09-29 2018-09-01 台虹科技股份有限公司 微小元件的轉移方法
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10181507B2 (en) * 2014-09-25 2019-01-15 X-Celeprint Limited Display tile structure and tiled display
CN107026124A (zh) * 2014-11-27 2017-08-08 广州硅芯电子科技有限公司 制造微型led显示器的方法和微型led显示器
CN107768487A (zh) * 2016-08-18 2018-03-06 新世纪光电股份有限公司 巨量转移电子元件的方法
CN108428638A (zh) * 2018-02-12 2018-08-21 友达光电股份有限公司 发光二极管的检测方法
CN110335845A (zh) * 2019-06-24 2019-10-15 深圳市华星光电半导体显示技术有限公司 一种MicroLED芯片的转移方法

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CN110335845A (zh) 2019-10-15
CN110335845B (zh) 2021-10-01

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