CN110335845B - 一种MicroLED芯片的转移方法 - Google Patents
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Abstract
一种MicroLED芯片的转移方法,将ACF胶预先贴合于MicroLED晶圆上,再通过转移MicroLED芯片到TFT基板上,使MicroLED的电极与TFT的电极实现对位,再通过对压头的加热和压力实现,MicroLED的电极与TFT的电极的电性连接。本发明能有效节省ACF胶的使用量,提升ACF材料的利用率,避免材料浪费,避免由于TFT地形不平坦问题导致污染压头的现象。
Description
技术领域
本发明涉及显示技术领域,特别涉及一种MicroLED芯片的转移方法。
背景技术
在现有技术中,为了将MicroLED转移到TFT基板上以实现可靠的电性连接。
如图1所示,通常采用在转移MicroLED 6’前,在TFT基板4’上贴合整面的ACF胶3’,转移完MicroLED 6’后通过加压和加热使MicroLED 6’粘合在TFT基板4’上,使MicroLED的电极2’与TFT的电极5’实现对位。
然而,MicroLED 6’与TFT基板4’的贴合面积仅占像素显示区的很小部分,而该方法需要在TFT基板4’的整面上铺满包含导电粒子31’的ACF胶3’,因此,此方式显然存在大量材料的浪费。
同时,由于TFT基板4’不平坦还会导致污染压头的现象。
为解决上述MicroLED转移工艺中存在ACF胶用量大所导致的浪费问题及污染问题,本领域中进一步提出了一种如公开号CN107768487A公开的巨量转移电子元件的方法。
该方法是首先提供晶圆及以矩阵方式排列于基板表面上的电子元件。接着,将晶圆贴附于暂时性固定层。随后,切割晶圆,以使晶圆形成多个板块。各板块包括至少部分电子元件以及子基板。扩张暂时性固定层,以使暂时性固定层上的这些板块随着暂时性固定层扩张而彼此分离。接着,将这些板块中的至少一部分选定为预定接合部分,将此预定接合部分中的每一板块分次地转移于承载基板,以使在预定接合部分中的这些电子元件接合于承载基板。最后,移除这些板块的子基板。
然而,该种改性的方法依然存在各种步骤复杂,TFT不平坦等问题。
因此,还有必要提供一种新的MicroLED芯片的转移方法,以克服上述缺陷。
发明内容
本发明的目的在于提供一种预先胶合ACF的MicroLED转移方法。不但可以节省ACF胶的使用量,而且避免由于TFT不平坦导致的污染压头的现象。
为了达到上述目的,本发明提供一种MicroLED芯片的转移方法,将包含导电粒子的ACF胶预先贴合于MicroLED晶圆上,再通过转移MicroLED芯片到TFT基板上,使MicroLED的电极与TFT的电极实现对位,随后通过对压头的加热和压力实现MicroLED的电极与TFT的电极的电性连接。本发明方法使得ACF胶仅位于MicroLED晶圆下表面,可以有避免由于TFT基板不平坦问题导致在非LED绑定(bonding),从而污染压头的现象。
本发明具体步骤如下:
S1制作MicroLEDs晶圆,在一所述晶圆包括基板以及排列于该基板的表面上的MicroLED芯片,所述MicroLED芯片形成金属电极,在所述MicroLED芯片电极侧胶合ACF胶;
S2将MicroLEDs晶圆通过ACF胶侧粘合到临时基板上;
S3剥离MicroLEDs晶圆基板,将MicroLEDs晶圆切割为MicroLED单芯片;
S4将MicroLED单芯片与临时基板解胶,转移MicroLED单芯片至TFT基板。
本发明先在晶圆(晶片)上先形成异方性导电膜,然后再进行切割,以获得具有ACF膜的MicroLED单芯片结构,并进行后续的转移步骤。
在本发明的一实施例中,上述制作MicroLEDs晶圆步骤中,所述晶圆基板是蓝宝石基板。
在本发明的一实施例中,上述制作MicroLEDs晶圆步骤中,所述晶圆基板是氮化镓基板。
在本发明的一实施例中,上述制作MicroLEDs晶圆步骤中,所述晶圆基板是氮化铝基板。
在本发明的一实施例中,上述制作MicroLEDs晶圆步骤中,所述晶圆基板是硅基板。
在本发明的一实施例中,上述制作MicroLEDs晶圆步骤中,所述晶圆基板是砷化镓基板。
在本发明的一实施例中,上述制作MicroLEDs晶圆步骤中,所述晶圆基板是碳化硅基板。
在本发明的一实施例中,上述剥离MicroLEDs晶圆基板,是通过在蓝宝石侧照射激光,实现蓝宝石基板剥离。
在本发明的一实施例中,上述将MicroLED单芯片与临时基板解胶步骤中,所述临时基板解胶是通过紫外光照射解胶。
在本发明的一实施例中,上述将MicroLED单芯片与临时基板解胶步骤中,晶圆是2吋或4吋。
基于上述,在本发明的所述MicroLED转移方法中,透过在粘合MicroLEDs晶圆与临时基板前,在MicroLED芯片电极侧胶合ACF胶,因此本发明实施例中的MicroLED转移方法,大量节省ACF胶的使用量,提升ACF材料的利用率,避免材料浪费,且由于在ACF仅位于MicroLED下表面,可以有避免由于TFT地形不平坦问题导致污染压头的现象。
附图说明
图1是现有技术中MicroLED转移到TFT基板上的结构示意图;
图2是根据本发明一实施例的MicroLED转移方法的流程示意图;
图3A至图3E是图2所示MicroLED转移方法的步骤流程中对应的结构示意图。
具体实施方式
以下,结合具体实施方式,对本发明的技术进行详细描述。应当知道的是,以下具体实施方式仅用于帮助本领域技术人员理解本发明,而非对本发明的限定。
如图2是本发明所述MicroLED转移方法的流程示意图;图3A至图3E是与图2所示MicroLED转移方法的步骤流程对应的结构示意图。
如图2所示,在本实施例中提供一种MicroLED转移方法包括:步骤S1:制作MicroLEDs晶圆的步骤:步骤S2:将所述MicroLEDs晶圆1粘合到临时基板上的步骤:步骤S3:剥离MicroLEDs晶圆基板的步骤;以及,步骤S4:获得MicroLED芯片的步骤。
在所述步骤S1中,如图3A所示,首先在一基板S上制作MicroLEDs晶圆1,并在所述MicroLEDs晶圆1上设置用于形成MicroLED芯片的电极2。随后,在所述电极2上胶合ACF胶3。
在本实施例中,所述MicroLEDs晶圆1是2吋或4吋,但本发明并不以晶圆1的大小为限制。所述MicroLEDs晶元1的基板S,可以是,例如:蓝宝石基板(Sapphire Substrate)、氮化镓基板(Gallium Nitride Substrate)、氮化铝基板(Aluminum Nitride Substrate)、硅基板(Silicon Substrate)、砷化镓基板(Gallium Arsenide Substrate)或碳化硅基板(Silicon Carbide Substrate)等。在本实施例中采用蓝宝石基板。
所述MicroLEDs晶圆1的制作过程包括:首先通过金属有机物化学气相沉积设备在蓝宝石(Al2O3)衬底上制备出MicroLED的各类晶层,如:GaN buffer层/n型GaN,、多量子阱层(MQW)发光层/P型GaN;再在晶圆上形成ITO电流扩展层以及金属电极层,通过ICP(感应耦合等离子体蚀刻)工艺制作电极。最终,如图3A所示,获得具有电极2的MicroLEDs晶圆1,并在具有电极的MicroLEDs晶圆1制作完成后,在电极2侧胶合ACF胶3。
在所述步骤S2中,如图2和图3B所示,将所述MicroLEDs晶圆1通过ACF胶3侧粘合到临时基板7上。
在所述步骤S3中。如图2和图3C所示,利用激光剥离技术(Laser Lift-Off),通过在所述基板S侧照射266nm激光,使处于基板S与GaN界面处的GaN气化,从而剥离所述基板S。此时,如图3C所示,通过所述ACF胶3粘合在临时基板7上的仅为具有电极2的MicroLEDs晶圆1,而没有所述基板S。
接着,在所述步骤S3中,如图2和图3D所示,通过切割,将所述MicroLEDs晶圆1切割为多个MicroLED单芯片6。此时,所有MicroLED单芯片6通过所述ACF胶3粘合在临时基板7。并且,如图3D所示,所述ACF胶3也被一并切割。
在所述步骤S4中,在转移前,通过紫外光(ultraviolet)照射,实现MicroLED单芯片与临时基板解胶,即可通过转移设备的转移头把所述MicroLED单芯片6从临时基板7上取下并取放到一TFT基板4上。从而,如图3E所示,利用ACF胶3将MicroLED单芯片6的电极2与一TFT基板4的电极5实现对位,再通过对压头的加热和压力,实现MicroLED单芯片6的电极2与所述TFT基板4上的电极5电气连接。
本领域技术人员可以理解的是,本文中术语MicroLED指示尺寸小于100um的LED,又称uLED;术语ACF是指异方性导电胶膜,是Anisotropic Conductive Film的缩写。
基于上述,在本发明的所述MicroLED转移方法中,透过在粘合MicroLEDs晶圆与临时基板前,在MicroLED芯片电极侧胶合ACF胶,因此本发明实施例中的MicroLED转移方法,大量节省ACF胶的使用量,提升ACF材料的利用率,避免材料浪费,且由于在ACF仅位于MicroLED下表面,可以有避免由于TFT地形不平坦问题导致污染压头的现象。
发明已由上述相关实施例加以描述,然而上述实施例仅为实施本发明的范例。必需指出的是,已公开的实施例并未限制本发明的范围。相反地,包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
Claims (9)
1.一种MicroLED芯片的转移方法,其特征在于:具体步骤如下:
S1、制作MicroLED晶圆,所述晶圆包括基板以及排列于该基板表面上的MicroLED芯片,并在MicroLED芯片上形成金属电极,在所述MicroLED芯片电极侧胶合ACF胶;
S2、将MicroLED晶圆通过ACF胶侧粘合到临时基板上;
S3、剥离MicroLED晶圆基板,将MicroLED晶圆切割为MicroLED单芯片,所述 ACF 胶也被一并切割;
S4、将MicroLED单芯片与临时基板解胶,转移MicroLED单芯片至TFT基板,使MicroLED的电极侧ACF胶与TFT的电极实现对位,再通过对压头的加热和压力实现,MicroLED的电极与TFT的电极的电性连接。
2.根据权利要求1所述的转移方法,其特征在于,MicroLED 晶圆制作按下述步骤:首先,通过金属有机物化学气相沉积设备在晶圆基板上制备出MicroLED的各类晶层,包括:GaN 缓冲层、n型GaN、多量子阱层(MQW)发光层和P型GaN;再在晶圆上形成ITO电流扩展层以及金属电极层,通过感应耦合等离子体蚀刻(ICP)工艺制作电极,得到具有电极的MicroLED晶圆;然后,MicroLED晶圆中每个MicroLED的电极侧胶合ACF胶。
3.根据权利要求2所述的转移方法,其特征在于,所述晶圆基板是Al2O3基板。
4.根据权利要求2所述的转移方法,其特征在于,所述晶圆基板是氮化镓基板、氮化铝基板,或硅基板。
5.根据权利要求2所述的转移方法,其特征在于,所述晶圆基板是砷化镓基板。
6.根据权利要求2所述的转移方法,其特征在于,S1步骤中所述晶圆基板是碳化硅基板。
7.根据权利要求1所述的转移方法,其特征在于,S3步骤中所述剥离MicroLED晶圆基板,是通过在晶圆基板侧照射激光,实现晶圆基板剥离。
8.根据权利要求1所述的转移方法,其特征在于,S4步骤中所述临时基板解胶是通过紫外光照射解胶。
9.根据权利要求1所述的转移方法,其特征在于,所述晶圆是2吋或4吋。
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