WO2018170352A1 - Procédé et processus de transfert en masse de micro-del - Google Patents

Procédé et processus de transfert en masse de micro-del Download PDF

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Publication number
WO2018170352A1
WO2018170352A1 PCT/US2018/022785 US2018022785W WO2018170352A1 WO 2018170352 A1 WO2018170352 A1 WO 2018170352A1 US 2018022785 W US2018022785 W US 2018022785W WO 2018170352 A1 WO2018170352 A1 WO 2018170352A1
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Prior art keywords
micro
leds
substrate
led
major surface
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PCT/US2018/022785
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English (en)
Inventor
Timothy James Orsley
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Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Corning Incorporated filed Critical Corning Incorporated
Priority to KR1020197030120A priority Critical patent/KR102478137B1/ko
Priority to JP2019550638A priority patent/JP7045390B2/ja
Priority to CN201880018492.3A priority patent/CN110462834B/zh
Publication of WO2018170352A1 publication Critical patent/WO2018170352A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the disclosure relates generally to the field of micro-LED device fabrication, and specifically to a process for mass-transfer of micro-LEDs to a device, such as a display backplane.
  • micro-LED material is grown on a growth substrate, such as sapphire.
  • the micro-LED material is then etched, typically while on the growth substrate, to form micro-LEDs.
  • the micro-LEDs are transferred to a display backplane. Due to the dense packing of micro-LEDs following etching and the need for sparse packing of micro-LEDs on the display backplane, efficient transfer of micro-LEDs particularly for large area displays, has proven difficult.
  • One embodiment of the disclosure relates to a method of forming a micro-LED display.
  • the method includes transferring a plurality of micro-LED material wafers onto a first major surface of a handling substrate. A first area is defined by a perimeter of the first major surface of the handling substrate, and a plurality of micro-LEDs are formed from each of the micro-LED material wafers.
  • the method includes transferring a subset of the plurality of micro-LEDs from the handling substrate to a first major surface of a display backplane, and the display backplane has electrical contacts coupled to each of the plurality of transferred micro-LEDs.
  • the subset of transferred micro-LEDs includes at least one micro- LEDs from each of the plurality of micro-LED material wafers, and the first area is equal to or greater than a second area defined by a perimeter of the first major surface of the display backplane.
  • An additional embodiment of the disclosure relates to a method of forming an LED device having a total number of micro-LEDs, m, arranged in an array on a selectively conductive substrate having an average separation pitch,
  • the method includes supporting a densely packed array of micro-LEDs on a first major surface of a non-conductive support substrate.
  • the densely packed array of micro-LEDS has an average separation pitch, p where > 10*/? / .
  • the method includes moving the non-conductive support substrate such that the densely packed array of micro-LEDs are positioned opposing a first major surface of the selectively conductive substrate.
  • the method includes releasing a group of n number of non-adjacent micro-LEDs from the densely packed array of the support substrate and onto the conductive substrate, where n > 0.05*m.
  • the micro-LED support device includes a glass or glass-ceramic substrate.
  • the glass or glass-ceramic substrate includes a first major surface, a second major surface opposite the first major surface, at least 50 mol% S1O2, a width greater than 200 mm and a length greater than 200 mm.
  • the micro-LED support device includes an array of at least 10 micro-LED material layers bonded to the first major surface of the glass or glass-ceramic substrate, and each micro-LED material layer is formed into an array of densely packed micro-LEDs.
  • the array of densely packed micro-LEDs includes an average separation pitch of less than or equal to 100 ⁇ and each micro-LED having a width of less than or equal to 100 ⁇ .
  • the total number of micro-LEDs supported by the glass substrate is greater than 10 million.
  • FIG. 1 is a schematic view of micro-LED wafers being bonded to a handling substrate, according to an exemplary embodiment.
  • FIG. 2 is a schematic view showing release of growth substrates from micro-LED material layers following bonding to the handling substrate, according to an exemplary embodiment.
  • FIG. 3 is a schematic perspective view of a handling substrate supporting micro-LED material layers from multiple wafers prior to etching, according to an exemplary
  • FIG. 4 is a schematic perspective view of micro-LED material from multiple wafers etched into micro-LEDs while supported by the handling substrate, according to an exemplary embodiment.
  • FIG. 5 is a schematic plan view of the handling substrate supporting micro-LEDs etched from the material of multiple wafers, according to an exemplary embodiment.
  • FIG. 6 is a schematic view of the handling substrate of FIG. 5 positioned adjacent a display backplane, according to an exemplary embodiment.
  • FIG. 7 is a schematic view of select, non-adjacent micro-LEDs being released from the handling substrate and bonded to the display backplane, according to an exemplary embodiment.
  • FIG. 8 is a schematic plan view of the handling substrate following release of select, non-adjacent micro-LEDs, according to an exemplary embodiment.
  • FIG. 9 is a schematic plan view of the display backplane following receipt of the select non-adjacent micro-LEDs from the handling substrate, according to an exemplary embodiment.
  • FIG. 10 is a schematic plan view showing population of gaps on a display backplane, according to an exemplary embodiment.
  • FIG. 11 shows etched micro-LEDs on a handling substrate having a small separation pitch, according to an exemplary embodiment.
  • FIG. 12 shows groups of three micro-LEDs on a display backplane having a large separation pitch, according to an exemplary embodiment.
  • micro-LEDs are typically formed by etching the individual micro-LEDs from deposited/grown micro-LED material into highly dense arrays while the micro-LED material is supported by the growth substrate (e.g., a sapphire growth substrate).
  • the growth substrate e.g., a sapphire growth substrate
  • the etched micro-LEDs are very small (e.g., dimensions less than 100 ⁇ , some as small as 12.5 ⁇ x 12.5 ⁇ or smaller) and have spacing between adjacent micro-LEDs in the as formed state (i.e., pitch) that is also very small (e.g. , pitch less than 100 ⁇ , less than 15 ⁇ or smaller).
  • Display backplanes typically have spacing between adjacent micro-LEDs that is many times greater than the spacing between adjacent micro-LEDS in the as formed state on the growth wafers. Efficiently transferring micro-LEDs from the dense state following etching to the sparse state on the display backplane is a major challenge in the development of large area micro-LED devices or displays with most prior transfer methods of which Applicant is aware requiring hundreds of separate transfer steps to populate a large size display backplane (e.g. , displays having dimensions greater than about 300 mm x 300 mm or larger).
  • the system and method discussed herein achieves sparse backplane population in a relatively low number of transfer steps (e.g., 20 or less and in specific embodiments, twelve transfer steps and in other embodiments, in four transfer steps).
  • the highly efficient backplane population system and method discussed herein involves bonding the micro-LED material from a large number of growth wafers into an array (e.g. , tiled) onto a large handling substrate that is as large or larger than the size of the display backplane.
  • the micro-LED material is etched into arrays of micro-LEDs.
  • Applicant believes that by etching the micro-LEDs from multiple wafers at once while the micro-LED material of multiple wafers is supported by the backplane allows for the micro-LEDs to have a very low level of pitch variation across the whole handling substrate (at least compared to processes in which micro-LEDs are etched on the growth substrate and transferred to a common handling substrate after etching). This process creates a handling substrate supporting a densely packed array of micro-LEDs that is as large (or potentially larger) than the display backplane.
  • the large, micro-LED supporting handling substrate is aligned with a display backplane, and a large number of non-adjacent micro-LEDs are released (e.g., via laser release) from the support substrate onto the display backplane.
  • a large number of non-adjacent micro-LEDs are released (e.g., via laser release) from the support substrate onto the display backplane.
  • non-adjacent micro-LEDs from the handling substrate that are separated from each other by desired display backplane pitch are released from the handling substrate and bonded to the display backplane.
  • a very large number of micro-LEDs are deposited on to the display backplane in a single transfer step.
  • most micro-LED displays include groups of the micro-LEDs including a red micro-LED, a blue micro-LED and a green micro-LED at each position on the display backplane, and in such embodiments, the fully populated display backplane is formed from at least one transfer from a different handling substrate for each micro-LED color.
  • the micro-LED wafers may be bonded to the handling substrate in a manner such that spaces or gaps in the form of empty rows and columns are formed between adjacent wafers on the handling substrate and these gaps are larger than the as-formed micro-LED pitch.
  • the system and method discussed herein includes use of additional micro-LED populated handling substrates that are used to populate "gaps" on the display backplane that result from the inter-wafer gap rows and columns on the primary handling substrates.
  • the total number of LED transfer steps required is less than 20 and may specifically be 12: one primary transfer for each of the three micro-LED colors, one row gap filing transfer for each of the three micro-LED colors, one column gap filing transfer for each of the three micro-LED colors, and one intersection gap filing transfer for each of the three micro-LED colors.
  • display backplanes can be populated in less than 20 steps as compared to hundreds of transfer steps of typical backplane population processes.
  • each micro-LED wafer 10 includes a layer of micro-LED material 16 (e.g., GaN for blue and green micro-LEDs, InP for red micro-LEDs) supported on a growth substrate 18.
  • micro-LED material 16 e.g., GaN for blue and green micro-LEDs, InP for red micro-LEDs
  • the layer of micro-LED material 16 of each wafer is bonded (e.g., through an adhesive material) to major surface 14 of handling substrate.
  • each growth substrate 18 is released (e.g., via a laser release process represented by arrow 19 or an alternative method such as grind and polish), leaving each of the layers of micro-LED material 16 from each of the wafers 10 bonded to handling substrate 12.
  • FIG. 1 shows removal of growth substrates 18 from the micro-LED layers 16 in one step.
  • each growth substrate 18 may be removed after its micro-LED layer 16 is adhered to handling substrate 12 and before attachment of the next, adjacent micro-LED layer 16.
  • Applicant believes that, by removing growth substrates 18 before attaching an adjacent micro-LED layer 16, the gap between the adjacent micro-LED layers 16 may be formed to be very small (about 1 mm).
  • handling substrate 12 has an adhesive which is initially uncured and later cured once the micro-LED material layers 16 is brought in contact with the adhesive.
  • the adhesive is a UV curing adhesive, for example, with the UV light passing through handling substrate 12 to cure the adhesive.
  • Select removal of micro-LEDs will be discussed in more detail below, selective release of individual micro- LEDs may be achieved by using a laser to warm that adhesive back into a liquid-like state at the location of the micro-LED to be released.
  • the heat from a laser also may be used to heat solder on the display backplane (discussed below) that is later cooled and frozen so that the micro-LED is bonded to the display backplane and able to release from the handling substrate 12.
  • micro-LED wafers 10 are bonded both along the width and length dimension (in the orientation of the figures) such that the LED material 16 from micro-LED wafers 10 form an array or tiled arrangement on handling substrate 12. As can be seen best in FIG. 3, following removal of growth substrates 18, a large number micro-LED material layers 16 from wafers 10 are arranged in the array or tiled pattern along major surface 14 of handling substrate 12.
  • handling substrate 12 has a width dimension, Wl , and a length, LI .
  • handling substrate 12 is substantially larger than wafers 10 such that multiple wafers 10 (and the micro-LED material layers 16 of multiple wafers 10) fit within the perimeter of handling substrate 12.
  • handling substrate has a perimeter of 2W1 + 2L1, and in specific embodiments, 2W1 + 2L1 is greater than 3 times, specifically greater than 5 times, more specifically greater than 10 times the length of the outermost perimeter of wafer 10.
  • the area of first major surface 14 of handling substrate 12 is at least 10 times greater than area of each micro-LED material layer 16.
  • FIG. 3 shows 20 micro-LED material layers 16 bonded to handling substrate 12 for illustration purposes, and in many applications, where handling substrate 12 is configured for populating large display backplanes (e.g., 50 inch displays, 65 inch displays, 75 inch displays, etc.) or multiple display backplanes, handling substrate 12 is as large or larger than the display backplane and includes enough micro-LED material layers 16 to fill the area of surface 14.
  • large display backplanes e.g., 50 inch displays, 65 inch displays, 75 inch displays, etc.
  • handling substrate 12 is as large or larger than the display backplane and includes enough micro-LED material layers 16 to fill the area of surface 14.
  • handling substrate 12 is sized to populate relatively large display backplanes in a small number of micro-LED transfer steps.
  • Wl and/or LI may be at least 200 mm, at least 300 mm, at least 700 mm, at least 1270 mm, at least 1650 mm, at least 1900 mm, at least 2200 mm, etc.
  • major surface 14 of handling substrate 12 has an area greater than 300 cm 2 , greater than 1000 cm 2 , greater than 5000 cm 2 , greater than 1000 cm 2 , etc.
  • handling substrate 12 is a non-conductive support substrate that does not include the electrical connections for powering micro-LEDs as are present on a display backplane.
  • substrate 12 is a sheet of glass or glass-ceramic material.
  • the material of substrate 12 is at least 50 mol% S1O2, and in specific embodiments, is between 67 mol% and 70 mol% S1O2.
  • substrate 12 may be Eagle XG glass available from Corning Inc.
  • substrate 12 in addition to having a large perimeter and area, substrate 12 may be relatively thin and light facilitating handling during processing as discussed herein. As shown in FIG. 2, substrate 12 has a second major surface 26 opposing first major surface 14. Substrate 12 has a thickness, Tl, defined between surfaces 14 and 26. In specific embodiments, Tl is between 0.25 mm and 1 mm. [0036] As shown in FIG. 3, in some embodiments, the arrangement of micro-LED wafers 10 onto handling substrate 12 creates a plurality of horizontally oriented gap rows 20, a plurality of vertically oriented gap columns 22, and a plurality of intersection gaps 24 at the intersections between rows 20 and columns 22.
  • Applicant believes that due to constraints imposed by the dimensions of micro-LED wafers 10 and/or the bonding and release processes for bonding micro-LED material layers 16 to handling substrate 12, there may be a limit to how close to each other micro-LED wafers 10 can be when attached to handling substrate 12. This limitation results in gaps 20, 22 and 24 between adjacent zones of micro-LED material layers 16.
  • gaps 20, 22 and 24 are fairly large compared to the size of micro-LED material layers 16 and are very large compared to the size of the micro-LEDs that will be formed from micro-LED material layers 16.
  • gaps 20 and 22 generally have a gap size, shown as Gl .
  • Gl is greater than 0.5 mm, specifically is between 0.5 mm and 1.5 mm, and more specifically is about 1 mm. It should be understood that gap size Gl is exaggerated in FIG. 3 for ease of illustration.
  • micro-LED material layers typically will be on the order of about 100 mm, and in such embodiments, at least 90%, specifically at least 95% and more specifically at least 99% of the surface area of handling substrate 12 is occupied by micro- LED material layers 16.
  • various display backplane population methods discussed herein utilize three additional handling substrates for each color micro-LED that are used to populate spaces on the display backplane corresponding to gaps 20 and 22 and intersections 24.
  • micro-LEDs 30 are formed from the multiple micro-LED layers 16 located on substrate 12. As shown in FIG. 4, micro-LEDs 30 are formed from multiple micro-LED material layers 16 while supported by handling substrate 12, and in specific embodiments, all micro-LEDs 30 are formed from all micro- LED material layers 16 while supported on handling substrate 12.
  • micro-LEDs 30 are formed by etching all of the micro- LED material layers 16 to form the plurality of micro-LEDs 30 while the micro-LED material layers 16 are supported by handling substrate 12.
  • etching to form micro-LEDs 30 includes applying a photoresist coating onto all of the micro-LED material layers 16 while supported on first major surface 14 of handling substrate 12.
  • FIG. 4 shows the micro-LED material layer 16 from each wafer 10 etched in 16 micro-LEDs for ease of depiction. While, the exact number of micro- LEDs 30 formed from each micro-LED material layer 16 will depend on the size of wafer 10 and the final size of each micro-LED 30, each micro-LED material layer 16 forms a large number of micro-LEDs 30. In specific embodiments, each micro-LED material layer 16 forms more than 1 ,000,000 micro LEDs 30, at least 10 million micro-LEDs 30, at least 30 million micro-LEDs 30, etc. Thus, in various embodiments, each handling substrate 12 may support more than 10 million micro-LEDs, more than 100 million micro-LEDs 30, more than 500 million micro-LEDs, more than 800 million micro-LEDs, etc.
  • the number of micro-LEDs 30 formed from each micro-LED material layer 16 depends on the size, shown as W2, of each micro-LED 30, on the size, shown as W3, of each micro-LED layer 16 and the separation or pitch, shown as PI , between adjacent micro-LEDs 30 within each micro-LED material layer 16.
  • W2 is less than or equal to 100 ⁇
  • PI is less than or equal to 100 ⁇
  • W3 is between 50 mm and 150 mm and more specifically is about 100 mm.
  • micro-LEDs 30 may be very small or densely packed micro-LEDs.
  • micro-LEDs 30 may be rectangular and have dimensions of about 1 1.5 x 1 1.5 ⁇ , and in some such embodiments, have pitch, PI of about 12.5 ⁇ .
  • W2 may be as small as 5 ⁇
  • FIGS. 5-9 population of one or more display backplane 40 is shown utilizing handling substrate 12.
  • FIG. 5 shows handling substrate 12 with additional areas of micro-LED material 16 etched into micro-LEDs 30 for purposes of illustrating display backplane population utilizing the system and method discussed herein.
  • FIG. 5 shows gap rows 20 and gap columns 22 as lines.
  • a selectively conductive substrate such as an insulating substrate with conductive traces, shown as display backplane 40
  • display backplane 40 is a support device configured to receive micro-LEDs 30 and to support micro-LEDs 30 in a display application.
  • display backplane 40 is a support device that includes one or more conductive layer/element and electrical contacts that will be coupled to each of the micro-LEDs 30 transferred to display backplane 40.
  • handling substrate 12 is moved and positioned such that micro-LEDs 30 are facing a first major surface 42 of display backplane 40.
  • the desired micro-LED separation pitch, P2, on display backplane 40 is greater than the etched, separation pitch, PI , in the dense, etched state of micro-LEDs 30 on handling substrate 12.
  • a subset of micro-LEDs 30 are transferred (e.g., via selective laser release) from handling substrate 12 to display backplane 40.
  • the separation pitch needed on display backplane 40 is accommodated by transferring non- adjacent micro-LEDs 44 that are spaced from each other substrate 12 by the desired backplane pitch, P2.
  • the area of surface 14 of handling substrate 12 is greater than or equal to the area of surface 42 of display backplane 40.
  • substrate 12 is as large or larger than display backplane 40, when in the facing arrangement shown in FIGS. 6 and 7, one micro-LED 30 on substrate 12 will be facing most or all of the desired LED locations on display backplane 40.
  • the selective release of each non-adjacent micro-LEDs 30 that are separated from each other by display pitch P2 forms transferred micro-LEDs 44 on display backplane 40 having pitch P2. In this manner, most or all of the display backplane 40 is populated as needed with micro- LEDs 30 in a single transfer step.
  • the transfer of micro-LEDs 30 from substrate 12 is shown in more detail.
  • Release of the subset of micro-LEDs 30 from substrate 12 forms a partially depopulated substrate 46 that has an ordered pattern of spaces 48 that were occupied by the micro-LEDs 30 that were released to become transferred micro-LEDs 44 located on display backplane 40.
  • the transferred micro-LEDs 44 on display backplane 40 are the mirror image of spaces 48 vacated by the transferred micro-LEDs from substrate 12.
  • FIGS. 7-9 at least one micro-LED 30 from each of micro- LED layers 16 is transferred to display backplane 40, and in such embodiments, because only a subset of micro-LEDs 30 from substrate 12 are transferred to populate display backplane 40, substrate 12 may be used to populate multiple display backplanes.
  • FIGS. 7- 9 show 25% of the micro-LEDs 30 from each micro-LED layer 16 being transferred, and as such substrate 12 could be used to populate four display backplanes 40.
  • each micro-LED layer 16 typically will include millions of micro-LEDs 30 and because the ratio of P2 to PI will be very large, only a small portion of the total number of LEDs from substrate 12 (e.g., less than 5% of micro-LEDs 30, less 3% micro-LEDs 30, less than 1 % of micro-LEDs 30, etc.) will be transferred to a backplane 40 in each transfer step.
  • each substrate 12 can be used in multiple transfer steps with multiple backplanes 40 in order to populate a large number of display backplanes.
  • the process discussed regarding FIGS. 7-9 will be repeated with three different substrates, each with micro-LEDs of one of the three colors.
  • the process includes ordering the handling substrate depopulation in a way that accounts for size and space occupied by micro-LEDs 30.
  • a full handling substrate 12 with the green of micro-LEDs may not be positionable as shown in FIG. 7 relative to a display backplane 40 that has already been populated with blue micro-LEDs due to interference between the micro- LEDs on the full substrate 12 and the blue micro-LEDs already on backplane 40.
  • a partially depopulated green micro-LED bearing substrate 12 is used when blue micro-LEDs 30 are already on the backplane 40.
  • some backplanes 40 may be first populated with green micro-LEDs to provide partially depopulated substrates 12 to populate those backplanes 40 that received blue micro-LEDs first, and some backplanes 40 may be first populated with blue micro-LEDs 30 to provide partially depopulated blue substrates 12 to populate substrates that received green micro-LEDs first.
  • red micro-LEDs are formed from a material that has a thickness (e.g., height from substrate 12) that is greater than the height of the material of blue or green micro-LEDs.
  • a thickness e.g., height from substrate 12
  • populating backplane 40 with red micro-LEDs 30 first or second would cause interference with the subsequent backplane population of green or blue micro-LEDs 30.
  • red micro-LEDs 30 are populated after all green and blue micro-LEDs 30 have been populated onto backplane 40.
  • the process discussed herein allows for formation of an LED device, such as a display device, that has a total number of micro-LEDs, m, arranged in an array on backplane 40, having an average separation pitch P2.
  • the micro-LEDs 30 are supported in a densely packed array on substrate 12 having an average separation pitch, PI .
  • P2 is greater than 10 times PI and more specifically P2 is greater than 30 times PI .
  • a large proportion of the total number of micro- LEDS, m, of display backplane 40 are transferred in a single step.
  • a n number of micro-LEDs 30 are released forming released micro-LEDs 44 on backplane 40 in each release step.
  • the large number of transferred micro-LEDs 30, n, transferred in a single transfer step follows one or more of the following relationships: n > 0.05*m, n > 0A *m, n > 0.2*m, or n > 0.3*m.
  • FIG. 10 in embodiments where substrate 12 includes gap rows 20, gap columns 22 and gap intersections 24, additional transfer steps may be needed to populate the corresponding gaps formed on display backplane 40.
  • transfer of micro- LEDs from substrate 12 creates gaps on display backplane 40 that correspond to gap rows 20, columns 22 and intersections 24 present on substrate 12.
  • display backplane 40 includes gap rows 50 that correspond with substrate gap rows 20, gap columns 52 that correspond with substrate gap columns 22 and gap intersections 54 that correspond to substrate gap intersections 24.
  • substrate 12 includes gaps 20, 22 and 24, when micro-LEDs are released from substrate 12 the areas of gaps 20, 22, and 24 without LEDs are not able to transfer LEDs to the opposing sections of display backplane 40 creating the corresponding backplane gaps 50, 52 and 54.
  • the size of gaps 50, 52 and 54 are greater than the desired pitch, P2, on display backplane 40 and further, the size of gaps 50, 52 and 54 results in a nonuniform distribution of micro-LEDs 44 on display backplane 40, before the gap-filling transfer steps.
  • three additional handling substrates shown as substrates 60, 62 and 64 are provided.
  • Substrates 60, 62 and 64 are formed in the same manner and have the same arrangement as substrate 12 discussed above. However, when substrates 60, 62 and 64 are aligned with display backplane 40 (in a manner similar to that shown in FIG.
  • substrate 60 is an "intersection” substrate, and select micro-LEDs (identified with the number 1) are released onto display backplane 40 to populate all of the intersections 54 on display backplane 40.
  • Substrate 62 is a "row” substrate, and select micro-LEDs (identified with the number 2) are released onto display backplane 40 to populate gap rows 50.
  • Substrate 64 is a "column” substrate, and select micro-LEDs (identified with the number 3) are released onto display backplane 40 to populate gap columns 52. In a particular embodiment, intersections 54 are filled before gap rows 50 or gap columns 52.
  • all micro-LEDs of a given color are populated onto display backplane 40 with four transfers, one from "intersection" substrate 60, one from “row” substrate 62, one from “column” substrate 64 and one from substrate 12.
  • display backplane 40 is populated with transfer from "intersection” substrate 60 first and the transfer from substrate 12 last. In such embodiments, 12 total transfers are needed to fully populate backplane 40 because the four transfers are repeated for each of the three micro-LED colors.
  • FIGS. 5-10 show pitch, PI , on substrates 12, 60, 62 and 64 as only being one half of pitch P2 on backplane 40 for ease of depiction.
  • FIGS. 11 and 12 illustrate an example of the pitch differential typical between etched micro-LEDs 30 and display backplane 40.
  • pitch PI of micro-LEDs 30 on substrate 12 is 12.5 ⁇
  • pitch P2 of micro-LEDS on display backplane 40 is 375 ⁇
  • every 30th micro-LED 30 from substrate 12 will be transferred to display backplane 40 to provide the display backplane pitch of 375 ⁇ .
  • each LED group 70 including three micro-LEDs.
  • each LED group 70 includes a blue micro-LED 72, a green micro-LED 74 and a red micro-LED 76.
  • each LED group 70 may include three LEDs of the same color, and in such embodiments, display backplane 40 may be used in conjunction with a color conversion device to form a final display device.
  • the method described herein may provide other advantages over other micro-LED etching and transfer methods. For example, lateral shifting of micro-LEDs during release from the growth wafer has been reported as stress from lattice mismatch is relieved during etching on the growth substrate. Applicant hypothesizes that lateral shifting of the micro-LEDs may be reduced or avoided by etching micro-LEDs 30 on substrate 12 as discussed herein, rather than etching on the growth substrate. [0057] Unless otherwise expressly stated, it is in no way intended that any method set forth herein be construed as requiring that its steps be performed in a specific order.

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Abstract

L'invention concerne un procédé de formation d'un dispositif ou d'un affichage à micro-DEL. Le procédé comprend le transfert d'une pluralité de tranches de matériau pour micro-DEL jusque sur un substrat de manipulation. Le procédé comprend le transfert d'un sous-ensemble de la pluralité de micro-DEL du substrat de manipulation à un fond d'affichage. Le sous-ensemble de micro-DEL transférées comprend au moins une micro-DEL issue de chaque tranche de la pluralité de tranches de matériau pour micro-DEL. L'aire définie par le périmètre du substrat de manipulation est supérieure ou égale à l'aire définie par un périmètre du fond d'affichage. Un pourcentage important du nombre total de micro-DEL nécessaires à l'affichage est transféré en une seule étape. Les micro-DEL peuvent être formées en gravant le matériau pour micro-DEL provenant de tranches multiples tandis qu'elles sont soutenues par le substrat de manipulation.
PCT/US2018/022785 2017-03-16 2018-03-16 Procédé et processus de transfert en masse de micro-del WO2018170352A1 (fr)

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KR1020197030120A KR102478137B1 (ko) 2017-03-16 2018-03-16 마이크로-led들의 대량 전달을 위한 방법 및 프로세스
JP2019550638A JP7045390B2 (ja) 2017-03-16 2018-03-16 マイクロｌｅｄのマストランスファー方法および処理
CN201880018492.3A CN110462834B (zh) 2017-03-16 2018-03-16 形成微型led显示器的方法

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JP2020514817A (ja) 2020-05-21
CN110462834B (zh) 2023-09-19
KR20190121393A (ko) 2019-10-25
TW201840015A (zh) 2018-11-01
TWI756384B (zh) 2022-03-01
KR102478137B1 (ko) 2022-12-15
CN110462834A (zh) 2019-11-15

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