TWI755470B - 導電薄膜、光電半導體裝置及其製造方法 - Google Patents

導電薄膜、光電半導體裝置及其製造方法 Download PDF

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Publication number
TWI755470B
TWI755470B TW107101582A TW107101582A TWI755470B TW I755470 B TWI755470 B TW I755470B TW 107101582 A TW107101582 A TW 107101582A TW 107101582 A TW107101582 A TW 107101582A TW I755470 B TWI755470 B TW I755470B
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TW
Taiwan
Prior art keywords
film layer
film
micro
conductive
matrix circuit
Prior art date
Application number
TW107101582A
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English (en)
Chinese (zh)
Other versions
TW201933580A (zh
Inventor
陳顯德
Original Assignee
優顯科技股份有限公司
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=67273170&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI755470(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 優顯科技股份有限公司 filed Critical 優顯科技股份有限公司
Priority to TW107101582A priority Critical patent/TWI755470B/zh
Priority to CN201811298368.5A priority patent/CN110047990B/zh
Priority to JP2018231392A priority patent/JP6688374B2/ja
Publication of TW201933580A publication Critical patent/TW201933580A/zh
Application granted granted Critical
Publication of TWI755470B publication Critical patent/TWI755470B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Wire Bonding (AREA)
TW107101582A 2018-01-16 2018-01-16 導電薄膜、光電半導體裝置及其製造方法 TWI755470B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW107101582A TWI755470B (zh) 2018-01-16 2018-01-16 導電薄膜、光電半導體裝置及其製造方法
CN201811298368.5A CN110047990B (zh) 2018-01-16 2018-11-02 导电薄膜、光电半导体装置及其制造方法
JP2018231392A JP6688374B2 (ja) 2018-01-16 2018-12-11 導電性フィルム、光電半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107101582A TWI755470B (zh) 2018-01-16 2018-01-16 導電薄膜、光電半導體裝置及其製造方法

Publications (2)

Publication Number Publication Date
TW201933580A TW201933580A (zh) 2019-08-16
TWI755470B true TWI755470B (zh) 2022-02-21

Family

ID=67273170

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107101582A TWI755470B (zh) 2018-01-16 2018-01-16 導電薄膜、光電半導體裝置及其製造方法

Country Status (3)

Country Link
JP (1) JP6688374B2 (ja)
CN (1) CN110047990B (ja)
TW (1) TWI755470B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI848035B (zh) * 2019-12-25 2024-07-11 南韓商樂金顯示科技股份有限公司 電子裝置及其製造方法
CN115312637B (zh) * 2022-10-11 2022-12-16 罗化芯显示科技开发(江苏)有限公司 一种Micro-LED显示装置及其制造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204142A (ja) * 2002-01-08 2003-07-18 Sumitomo Metal Micro Devices Inc 電子部品実装方法及び電子部品実装装置
JP2008210908A (ja) * 2007-02-26 2008-09-11 Tokai Rubber Ind Ltd 電子部品の実装方法
TW201129994A (en) * 2009-09-30 2011-09-01 Sony Chem & Inf Device Corp Anisotropic conducting film and method for manufacturing the same
CN103069565A (zh) * 2010-08-25 2013-04-24 罗伯特·博世有限公司 用于制造电路的方法和电路
TW201705618A (zh) * 2015-03-09 2017-02-01 Hitachi Chemical Co Ltd 連接結構體的製造方法
CN107026124A (zh) * 2014-11-27 2017-08-08 广州硅芯电子科技有限公司 制造微型led显示器的方法和微型led显示器
TW201735391A (zh) * 2016-03-02 2017-10-01 迪睿合股份有限公司 顯示裝置及其製造方法、以及發光裝置及其製造方法
CN107527930A (zh) * 2016-06-17 2017-12-29 优显科技股份有限公司 光电半导体装置
TW201800478A (zh) * 2016-02-22 2018-01-01 迪睿合股份有限公司 異向性導電膜

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4880533B2 (ja) * 2007-07-03 2012-02-22 ソニーケミカル＆インフォメーションデバイス株式会社 異方性導電膜及びその製造方法、並びに接合体
JP5685473B2 (ja) * 2011-04-06 2015-03-18 デクセリアルズ株式会社 異方性導電フィルム、接合体の製造方法、及び接合体

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204142A (ja) * 2002-01-08 2003-07-18 Sumitomo Metal Micro Devices Inc 電子部品実装方法及び電子部品実装装置
JP2008210908A (ja) * 2007-02-26 2008-09-11 Tokai Rubber Ind Ltd 電子部品の実装方法
TW201129994A (en) * 2009-09-30 2011-09-01 Sony Chem & Inf Device Corp Anisotropic conducting film and method for manufacturing the same
CN103069565A (zh) * 2010-08-25 2013-04-24 罗伯特·博世有限公司 用于制造电路的方法和电路
CN107026124A (zh) * 2014-11-27 2017-08-08 广州硅芯电子科技有限公司 制造微型led显示器的方法和微型led显示器
TW201705618A (zh) * 2015-03-09 2017-02-01 Hitachi Chemical Co Ltd 連接結構體的製造方法
TW201800478A (zh) * 2016-02-22 2018-01-01 迪睿合股份有限公司 異向性導電膜
TW201735391A (zh) * 2016-03-02 2017-10-01 迪睿合股份有限公司 顯示裝置及其製造方法、以及發光裝置及其製造方法
CN107527930A (zh) * 2016-06-17 2017-12-29 优显科技股份有限公司 光电半导体装置

Also Published As

Publication number Publication date
CN110047990B (zh) 2022-04-29
TW201933580A (zh) 2019-08-16
JP2019125780A (ja) 2019-07-25
CN110047990A (zh) 2019-07-23
JP6688374B2 (ja) 2020-04-28

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