TWI755470B - Conductive film, optoelectronic semiconductor device and manufacturing method of the same - Google Patents

Abstract

A conductive film, optoelectronic semiconductor device and manufacturing method of the same are disclosed. The conductive film is cooperated with at least a micro-sized semiconductor element and a matrix substrate. The matrix substrate has a substrate and a matrix circuit, the matrix circuit is disposed on the substrate. The conductive film includes a first film and a second film. The first film is disposed on the matrix circuit and comprises a plurality of conductive particles and an insulating material. The conductive particles are mixed in the insulating material. The second film is an insulating layer and disposed on the first film. Wherein, at least partial of the micro-sized semiconductor element is located in the conductive film, and has at least a electrode. The electrode is electrically connected with the matrix circuit by a partial of the conductive particles in the vertical direction of the matrix substrate.

Description

Conductive thin film, optoelectronic semiconductor device and manufacturing method thereof

The present invention relates to a vertical conductive film, an optoelectronic semiconductor device and a manufacturing method thereof.

The Micro LED Array (Micro LED Array) display composed of Micro Light Emitting Diodes (Micro LED, μLED) is more helpful than the traditional liquid crystal display because it does not need an additional backlight light source. Achieve lightweight and thinning purposes.

In the process of manufacturing optoelectronic devices, traditional light-emitting diodes (side lengths greater than 150 microns) are produced by epitaxy, yellow light, metal plating, etching and other processes, and then cut to obtain a light-emitting diode. One light-emitting diode die, and the electrode of the light-emitting diode is electrically connected with the circuit substrate by wire bonding or eutectic bonding. However, for micro light emitting diodes, due to the relatively small size (eg, only 25 microns or less), the electrical connection of the electrodes cannot be made with conventional wire bonding or eutectic bonding equipment.

In view of the above, the purpose of the present invention is to provide a conductive film, an optoelectronic semiconductor device and a manufacturing method thereof, which can solve the problem that the size of the micro-sized semiconducting element is too small to be electrically connected by the traditional wire bonding or eutectic bonding process. .

In order to achieve the above purpose, a conductive film according to the present invention is used in conjunction with at least one micro-sized semiconductor element and a matrix substrate, the matrix substrate has a base material and a matrix circuit, the matrix circuit is arranged on the base material, and the conductive film includes a a first film layer and a second film layer. The first film layer is arranged on the matrix circuit, and has a plurality of conductive particles and an insulating material, the insulating material has adhesiveness, and the conductive particles are mixed in the insulating material. The second film layer is an insulating layer and It has adhesiveness and is arranged on the first film layer; wherein, at least part of the micro-sized semiconductor elements are located in the conductive film and have at least one electrode, and the electrode is connected to the matrix circuit in the vertical direction of the matrix substrate through some of the conductive particles Electrical connection.

In order to achieve the above object, an optoelectronic semiconductor device according to the present invention includes a matrix substrate, a conductive film and at least one micro-sized semiconductor element. The matrix substrate has a base material and a matrix circuit, and the matrix circuit is arranged on the base material. The conductive film includes a first film layer and a second film layer. The first film layer is arranged on the matrix circuit, and has a plurality of conductive particles and an insulating material, the insulating material has adhesiveness, and the conductive particles are mixed in the insulating material. The second film layer is an insulating layer and has adhesiveness, and is disposed on the first film layer. The micro-sized semiconductor element is at least partially disposed in the conductive film, the micro-sized semiconductor element has at least one electrode, and the electrode is electrically connected with the matrix circuit in the vertical direction of the matrix substrate through some of the conductive particles.

In one embodiment, at room temperature, the fluidity and adhesion of the second film layer are greater than those of the first film layer, and the hardness of the second film layer is smaller than that of the first film layer.

In one embodiment, the thickness of the first film layer is between 2.5 μm and 3.5 μm, the thickness of the second film layer is between 2 μm and 4 μm, and the total thickness of the conductive film is not greater than 6.5 μm.

In one embodiment, the adhesion of the second film layer to glass between 25°C and 50°C is greater than 1100 g/cm 2 .

In one embodiment, neither the first film layer nor the second film layer is cured at 60° C. for 4 minutes.

In one embodiment, the side length dimension of the micro-sized semiconductor device is less than or equal to 150 microns.

In order to achieve the above object, a method for manufacturing an optoelectronic semiconductor device according to the present invention includes: providing a matrix substrate, wherein the matrix substrate includes a base material and a matrix circuit, and the matrix circuit is arranged on the base material; On the matrix circuit, the conductive film includes a first film layer and a second film layer, the first film layer is disposed on the matrix circuit, and has a plurality of conductive particles and an insulating material, the insulating material has adhesion, and the Some conductive particles are mixed in the insulating material, the second film layer is an insulating layer and has adhesiveness, and is arranged on the first film layer; at least one micro-sized semiconductor element is arranged on the second film layer, wherein the micro-sized semiconductor element of at least An electrode faces the second film layer; at a first temperature, with a first pressure, the micro-sized semiconductor element is pressed from the second film layer to the conductive particles of the first film layer for a first time; the temperature is raised to a second temperature, while raising the pressure to a second pressure for a second time without depressurizing; and curing the first film layer and the second film layer, thereby making the electrodes of the microscale semiconductor element A part of the conductive particles are electrically connected with the matrix circuit in the vertical direction of the matrix substrate.

In one embodiment, the range of the first temperature is between 50° C. and 80° C., the first pressure is between 1 MPa and 10 MPa, and the first time is between 5 seconds and 40 seconds.

In one embodiment, the second temperature ranges between 140° C. and 200° C., the second pressure is between 50 MPa and 100 MPa, and the second time is between 5 seconds and 60 seconds.

Based on the above, in the conductive thin film, optoelectronic semiconductor device and manufacturing method thereof of the present invention, the conductive thin film in the vertical direction is used to electrically connect the electrodes of the micro-sized semiconductor element with the matrix circuit, so the problem of The problem with the size of the semiconducting elements is too small to be electrically connected to the matrix circuit by conventional wire bonding or eutectic bonding processes. In addition, compared with the conventional transposition and bonding technology, the fabrication process of the optoelectronic semiconductor device of the present invention is also simpler and faster, and can be applied to different fields according to design requirements, and also has lower manufacturing time and cost. cost.

1. 1a‧‧‧Optoelectronic semiconductor devices

11‧‧‧Matrix substrate

111‧‧‧Substrate

112‧‧‧Matrix Circuits

12‧‧‧Conductive film

121‧‧‧First film layer

1211‧‧‧Conductive particles

1212‧‧‧Insulating material

122‧‧‧Second film

13. 13a‧‧‧Micro-sized semiconductor components

D1, D2‧‧‧Electrical connection pad

E1, E2‧‧‧electrode

P1‧‧‧First Pressure

P2‧‧‧Second pressure

Steps S01 to S06‧‧‧

FIG. 1 is a schematic flow chart of a method for manufacturing an optoelectronic semiconductor device according to a preferred embodiment of the present invention.

2A to 2F are schematic diagrams of a manufacturing process of an optoelectronic semiconductor device according to an embodiment of the present invention, respectively.

FIG. 3 is a schematic diagram of an optoelectronic semiconductor device according to another embodiment of the present invention.

The conductive thin film, the optoelectronic semiconductor device and the manufacturing method thereof according to the preferred embodiments of the present invention will be described below with reference to the related drawings, wherein the same components will be described with the same reference symbols.

The "optoelectronic semiconductor device" of the present invention can be applied to display panels, billboards, sensing devices, semiconductor devices or lighting devices, etc. If the optoelectronic semiconductor device is a display, it can be a monochrome or full-color display. Please refer to FIG. 1 , which is a schematic flow chart of a method for manufacturing an optoelectronic semiconductor device according to a preferred embodiment of the present invention.

As shown in FIG. 1 , the method for manufacturing an optoelectronic semiconductor device of the present invention may include: providing a matrix substrate, wherein the matrix substrate includes a substrate and a matrix circuit, and the matrix circuit is arranged on the substrate (step S01 ); providing a conductive film It is attached to the matrix circuit, wherein the conductive film includes a first film layer and a second film layer, the first film layer is arranged on the matrix circuit, and has a plurality of conductive particles and an insulating material, and the conductive particles are mixed in In the insulating material, and the second film layer is an insulating layer and is arranged on the first film layer (step S02); at least one micro-sized semiconductor element is arranged on the second film layer, wherein at least one electrode of the micro-sized semiconductor element faces the first film layer. Two film layers (step S03 ); at a first temperature and a first pressure, the micro-sized semiconductor element is laminated from the second film layer to the conductive particles of the first film layer for a first time (step S04 ) ; after that, raising the temperature to a second temperature, and at the same time raising the pressure to a second pressure without releasing the pressure for a second time (step S05); and making the first film layer and the second film layer After curing, the electrodes of the micro-sized semiconductor elements are electrically connected to the matrix circuit in the vertical direction of the matrix substrate through some of the conductive particles (step S06 ).

In the following, please refer to FIG. 2A to FIG. 2F to describe the details of the above steps S01 to S06 . 2A to 2F are schematic diagrams of a manufacturing process of an optoelectronic semiconductor device 1 according to an embodiment of the present invention, respectively.

As shown in FIG. 2A , first, a matrix substrate 11 is provided, wherein the matrix substrate 11 includes a substrate 111 and a matrix circuit 112 , and the matrix circuit 112 is disposed on the substrate 111 (step S01 ). The substrate 111 may be a light-transmitting material, such as but not limited to glass, quartz or the like, plastic, rubber, fiberglass or other polymer materials. The base material 111 can also be made of an opaque material, such as a metal-glass fiber composite board and a metal-ceramic composite board. In addition, the base material 111 may be a rigid board or a flexible board. The flexible board is flexible, also known as a flexible substrate, such as a flexible circuit board, its material can include organic polymer materials, and is a thermoplastic material, such as but not limited to polyimide (PI), Ethylene (Polyethylene, PE), Polyvinyl chloride (Polyvinylchloride, PVC), Polystyrene (PS), Acrylic (acrylic, acrylic), Fluoropolymer (Fluoropolymer), Polyester fiber (polyester) or nylon (nylon) etc. are not limited here. In addition, the matrix circuit 112 of the present embodiment may include a plurality of electrical connection pads D1 and D2, and the electrical connection pads D1 and D2 may be a set and arranged at intervals. In addition, according to the form of the matrix circuit 112 arranged on the substrate 111 , the matrix substrate 11 may be an active matrix substrate or a passive matrix substrate. For example, if the matrix substrate 11 is an active matrix substrate (TFT substrate) in a liquid crystal display device, it can be arranged with staggered data lines, scan lines and a plurality of active elements (eg, TFTs). Since the technology of the matrix circuit 112 and the driving of the active matrix substrate is a conventional technology and is not the focus of the present invention, those skilled in the art can find relevant content, and further description is omitted here.

Next, as shown in FIG. 2B , a conductive film 12 is provided and attached to the matrix circuit 112 , wherein the conductive film 12 includes a first film layer 121 and a second film layer 122 , and the first film layer 121 is disposed on the matrix circuit 112 There are a plurality of conductive particles 1211 and an insulating material 1212, the conductive particles 1211 are mixed in the insulating material 1212, and the second film layer 122 is an insulating layer and is disposed on the first film layer 121 (step S02). The insulating material 1212 and the second film layer 122 both have adhesiveness, and at room temperature (eg, 25° C.), the adhesiveness of the second film layer 122 is greater than that of the first film layer 121 , and the hardness of the second film layer 122 The hardness is smaller than the hardness of the first film layer 121 , and the adhesion force of the second film layer 122 to glass between 25° C. and 50° C. needs to be greater than 1100 g/cm 2 . Specifically, the adhesion of the second film layer 122 is greater than that of the first film layer 121, and the second film layer 122 is also softer than the first film layer 121, so that the micro-sized semiconductor element (FIG. 2C) is placed and pressed into the first film layer 121. When the second film layer 122 is used, the conductive film layer 12 can be captured (adhered) smoothly. In addition, the first film layer 121 and the second film layer 122 will not be cured during the transposition process, for example, they will not be cured after 4 minutes at 60° C., so that the micro-sized semiconductive elements can be smoothly adhered and transposed to the conductive state. Process of the film layer 12 . In addition, in some embodiments, the thickness of the first film layer 121 may be between 2.5 μm and 3.5 μm (2.5 μm≦the thickness of the first film layer 121≦3.5 μm), and the thickness of the second film layer 122 may be Between 2 μm and 4 μm (2 μm≦the thickness of the second film layer 122≦4 μm, and the total thickness of the conductive film 12 is not greater than 6.5 μm (ie≦6.5 μm).

In some embodiments, the conductive particles 1211 of the first film layer 121 can be made of a metal material, and the metal material can be, for example but not limited to, gold, silver, copper or tin, or an alloy thereof; or, the conductive particles 1211 can also be It is an insulating elastic particle covered by a metal layer, an example of the material of the metal layer Such as but not limited to nickel/gold. In some embodiments, the insulating material 1212 of the first film layer 121 and the second film layer 122 may include, for example, but not limited to, Epoxy glue or acrylic glue. In some embodiments, the first film layer 121 and the second film layer 122 may be thermally cured materials, and thus will be cured and shaped at high temperatures. In addition, in this embodiment, the conductive particles 1211 are arranged on the matrix circuit 112 in a direction perpendicular to the matrix substrate 11 (z direction), which is close to the same horizontality and the particles are not in contact with each other. However, in different embodiments , the conductive particles 1211 may also be located in the insulating material 1212 in a random manner, which is not limited in the present invention.

Next, as shown in FIG. 2C , at least one micro-sized semiconductor element 13 is disposed on the second film layer 122 , wherein at least one electrode E1 of the micro-sized semiconductor element 13 faces the second film layer 122 (step S03 ). Each micro-sized semiconductor element 13 in this embodiment includes two electrodes E1 and E2 respectively, and a plurality of micro-sized semiconductor elements 13 are arranged on the second film layer 122 at intervals, so that the electrodes E1 and E2 of these micro-sized semiconductor elements 13 They may correspond to the electrical connection pads D1 and D2 on the matrix circuit 11 respectively. Wherein, the micro-sized semiconductor elements 13 can be arranged in a straight row, a row, or a matrix of rows and columns, or arranged in a polygonal or irregular shape, which is not limited. In addition, the side length of each micro-sized semiconductor element 13 is less than or equal to 150 μm, for example, between 1 μm and 150 μm (1 μm≦side length≦150 μm). In some embodiments, the size of the micro-sized semiconductor elements 13 may be, for example, 25 μm×25 μm, and the minimum distance between two adjacent micro-sized semiconductor elements 13 may be, for example, 1 μm or less, which is not limited in the present invention.

In addition, the microscale semiconductor element 13 may be a two-electrode element (eg, but not limited to a light emitting diode), or a three-electrode element (eg, a transistor). This embodiment is described by taking the micro-sized semiconductor element 13 as a micro light-emitting diode (μLED) as an example. The electrodes of the micro light-emitting diodes can be p-pole and n-pole on the same side (horizontal structure), or p-pole and n-pole are located on the upper and lower sides respectively (up-down conduction type or vertical structure). The micro-sized semiconductor element 13 in this embodiment is a μLED with a horizontal structure as an example, and its two electrodes E1 and E2 correspond to a pair of electrical connection pads D1 and D2 on the matrix circuit 112 respectively. In addition, if classified by color wavelength, when the micro-sized semiconductor element 13 is a μLED, it can be a blue light emitting diode, or a red, green, infrared or ultraviolet light emitting diode, or a combination thereof.

Next, as shown in FIG. 2D, at a first temperature and a first pressure P1 The micro-sized semiconductor device 13 is pressed against the conductive particles 1211 of the first film layer 121 by the second film layer 122 for a first time (step S04 ). The range of the first temperature may be between 50°C and 80°C (50°C≦T1≦80°C), the first pressure P1 may be between 1MPa and 10MPa (1MPa≦P1≦10MPa), and the first The time can be between 5 seconds and 40 seconds (5 seconds≦t1≦40 seconds). In some embodiments, the first temperature may be, for example, 50°C. Here, the first temperature, the first pressure P1 and the first time may be adjusted within the above ranges depending on the process conditions.

When the micro-sized semiconductor element 13 is pressed against the conductive particles 1211 of the first film layer 121 by the first pressure P1, since the fluidity of the first film layer 121 is low and smaller than that of the second film layer 122, the conductive particles 1211 will not be easy to It moves horizontally to both sides due to extrusion, so that in the horizontal direction, the conductive particles 1211 will not cause short-circuit or conduction between the two electrodes E1 and E2, but some conductive particles 1211 will be sandwiched between the electrodes E1 and E2. between the electrical connection pads D1 and D2.

Next, as shown in FIG. 2E , the temperature is raised to a second temperature, and the pressure is raised to a second pressure P2 for a second time without depressurizing at the same time (step S05 ). Here, the pressure is increased to the second pressure P2 (P2>P1) without releasing the pressure (the first pressure P1), so as to continuously press the micro-sized semiconductor element 13, so that the electrode E1 of the micro-sized semiconductor element 13 is pressed. , E2 can be completely contacted with the electrical connection pads D1 and D2 by the conductive particles 1211 respectively. At the same time, since the first film layer 121 and the second film layer 122 are thermosetting materials, under the condition of high temperature (the second temperature), the first film layer 121 and the second film layer 122 will gradually solidify and form, so that the The conductive film layer 12 can firmly hold (adhere) the micro-sized semiconductor element 13, and the electrodes E1 and E2 can be completely contacted with the electrical connection pads D1 and D2 by the conductive particles 1211 respectively to electrically connect the two.

In some embodiments, the second temperature needs to be above 140°C, the range of which may be, for example, between 140°C and 200°C (140°C≦T2≦200°C), and the second pressure P2 may be between 50MPa and 100MPa (50MPa≦P2≦100MPa), and the second time is between 5 seconds and 60 seconds (5 seconds≦t2≦60 seconds). Here, the second temperature, the second pressure P2 and the second time can be adjusted within the above ranges depending on the process conditions.

Finally, as shown in FIG. 2F , after a period of time (ie, a second period of time), the first film layer 121 and the second film layer 122 are cured, so that the electrode E1 of the micro-scale semiconductor element 13 is electrically conductive through some of these The particles 1211 are in the vertical direction of the matrix substrate 11 and the matrix circuit 112 Electrical connection (step S06).

Therefore, the optoelectronic semiconductor device 1 of this embodiment may include a matrix substrate 11 , a conductive thin film 12 and a plurality of micro-sized semiconductor elements 13 . The matrix substrate 11 has a base material 111 and a matrix circuit 112 , and the matrix circuit 112 is disposed on the base material 111 . The conductive film 12 includes a first film layer 121 and a second film layer 122. The first film layer 121 is disposed on the matrix circuit 112 and has a plurality of conductive particles 1211 and an insulating material 1212. The conductive particles 1211 are mixed in the matrix circuit 112. In the insulating material 1212 , the second film layer 122 is an insulating layer and is disposed on the first film layer 121 . The micro-sized semiconductor elements 13 are at least partially disposed in the conductive film 12 , wherein each micro-sized semiconductor element 13 has two electrodes E1 and E2 respectively. The electrodes E1 and E2 are formed by the conductive particles 1211 of the conductive film 12 in the matrix. The substrate 11 is electrically connected to the electrical connection pads D1 and D2 of the matrix circuit 112 in the vertical direction, respectively.

Continuing from the above, in the optoelectronic semiconductor device 1 of the present embodiment, the electrodes E1 and E2 of the micro-sized semiconductor element 13 can be electrically connected to the matrix circuit 112 by using the conductive film 12 in the vertical direction. The size of the semiconducting element 13 is too small to be electrically connected to the matrix circuit by conventional wire bonding or eutectic bonding processes. In addition, compared with the conventional transposition and bonding technology, the manufacturing process of the optoelectronic semiconductor device 1 of the present embodiment is also simpler and faster, and can be applied to different fields according to design requirements, and also has lower manufacturing costs. time and cost. In addition, since the size of the micro-sized semiconductor elements 13 is relatively small, the arrangement density thereof can be relatively high, so that the fabricated optoelectronic semiconductor device 1 can have a relatively high resolution, so it is particularly suitable for fabricating high-resolution displays, such as VR or AR head-mounted display.

FIG. 3 is a schematic diagram of an optoelectronic semiconductor device 1 a according to another embodiment of the present invention. As shown in FIG. 3 , the main difference between the optoelectronic semiconductor device 1 a of the present embodiment and the optoelectronic semiconductor device 1 of FIG. 2F is that the micro-sized semiconductor element 13 a of the present embodiment is a vertical-structure μLED as an example. Therefore, only one electrode E1 is electrically connected to the matrix circuit 112 in the vertical direction of the matrix substrate 11 through part of the conductive particles 1211 of the conductive film 12 (the other electrode E2 can be electrically connected to other circuits through other processes, not limited). In addition, other technical features of the optoelectronic semiconductor device 1a and the manufacturing method thereof can be referred to the same elements of the optoelectronic semiconductor device 1 and the manufacturing method thereof, which will not be repeated here.

In summary, the conductive thin film, optoelectronic semiconductor device and manufacturing thereof of the present invention In the method, the electrode of the micro-sized semiconductor element can be electrically connected with the matrix circuit by using the conductive film in the vertical direction. Therefore, it can solve the problem that the size of the micro-sized semi-conductive element is too small to use the traditional wire bonding or eutectic bonding process. Problems with the electrical connection to the matrix circuit. In addition, compared with the conventional transposition and bonding technology, the fabrication process of the optoelectronic semiconductor device of the present invention is also simpler and faster, and can be applied to different fields according to design requirements, and also has lower manufacturing time and cost. cost.

The above description is exemplary only, not limiting. Any equivalent modifications or changes that do not depart from the spirit and scope of the present invention shall be included in the appended patent application scope.

Steps S01 to S06‧‧‧

Claims (14)

A conductive film is used in conjunction with at least one micro-sized semiconductor element and a matrix substrate, the matrix substrate has a base material and a matrix circuit, the matrix circuit is arranged on the base material, and the conductive film comprises: a first film layer , which is arranged on the matrix circuit, and has a plurality of conductive particles and an insulating material, and the conductive particles are mixed in the insulating material; and a second film layer, which is an insulating layer and is arranged on the first film layer; Wherein, at least part of the micro-sized semiconductor element is located in the conductive film, and has at least one electrode, and the electrode is electrically connected with the matrix circuit in the vertical direction of the matrix substrate through some of the conductive particles; wherein, the first A film layer and the second film layer are thermosetting materials; at room temperature, the fluidity and adhesion of the second film layer are both greater than those of the first film layer, and the fluidity of the second film layer is sufficient for the Micro-scale semiconductor elements pass through. The conductive film according to claim 1, wherein at room temperature, the hardness of the second film layer is smaller than the hardness of the first film layer. The conductive thin film of claim 1, wherein the thickness of the first film layer is between 2.5 microns and 3.5 microns, the thickness of the second film layer is between 2 microns and 4 microns, and the The total thickness of the conductive film is not more than 6.5 microns. The conductive film as described in claim 1, wherein the adhesion force of the second film layer to glass between 25°C and 50°C is greater than 1100 g/cm 2 . The conductive film according to claim 1, wherein neither the first film layer nor the second film layer is cured at 60° C. for 4 minutes. An optoelectronic semiconductor device, comprising: a matrix substrate having a base material and a matrix circuit, the matrix circuit being arranged on the base material; a conductive film comprising: a first film layer being arranged on the matrix circuit, and There are a plurality of conductive particles and an insulating material, the conductive particles are mixed in the insulating material; and a second film layer, which is an insulating layer and is disposed on the first film layer; and at least one micro-sized semiconductor element, at least part is arranged in the conductive film, the micro-sized half The conductor element has at least one electrode, and the electrode is electrically connected with the matrix circuit in the vertical direction of the matrix substrate through some of the conductive particles; wherein, the first film layer and the second film layer are thermosetting materials; At room temperature, the fluidity and adhesion of the second film layer are greater than those of the first film layer, and the fluidity of the second film layer is sufficient to allow the micro-sized semiconductor device to pass through. The optoelectronic semiconductor device according to claim 6, wherein at room temperature, the hardness of the second film layer is smaller than the hardness of the first film layer. The optoelectronic semiconductor device of claim 6, wherein the thickness of the first film layer is between 2.5 microns and 3.5 microns, the thickness of the second film layer is between 2 microns and 4 microns, and The total thickness of the conductive film is not more than 6.5 microns. The optoelectronic semiconductor device as claimed in claim 6, wherein the adhesion of the second film layer to glass between 25°C and 50°C is greater than 1100 g/cm 2 . The optoelectronic semiconductor device of claim 6, wherein neither the first film layer nor the second film layer is cured at 60° C. for 4 minutes. The optoelectronic semiconductor device of claim 6, wherein the side length of the micro-sized semiconductor element is less than or equal to 150 microns. A manufacturing method of an optoelectronic semiconductor device, comprising: providing a matrix substrate, wherein the matrix substrate comprises a base material and a matrix circuit, the matrix circuit is arranged on the base material; providing a conductive film attached to the matrix circuit, The conductive film includes a first film layer and a second film layer, the first film layer is disposed on the matrix circuit, and has a plurality of conductive particles and an insulating material, and the conductive particles are mixed in the insulating material , and the second film layer is an insulating layer and is arranged on the first film layer; at least one micro-sized semiconductor element is arranged on the second film layer, wherein at least one electrode of the micro-sized semiconductor element faces the second film layer; at a first temperature, with a first pressure, the micro-sized semiconductor element is laminated from the second film to the conductive particles of the first film for a first time; raising the temperature to a first two temperatures while raising the pressure to a second pressure without depressurizing for a second time; and The first film layer and the second film layer are cured, so that the electrode of the micro-sized semiconductor element is electrically connected to the matrix circuit in the vertical direction of the matrix substrate through part of the conductive particles; wherein, the The first film layer and the second film layer are thermosetting materials; at room temperature, the fluidity and adhesion of the second film layer are greater than those of the first film layer, and the fluidity of the second film layer is sufficient to allow The microscale semiconductor element passes through. The manufacturing method of claim 12, wherein the range of the first temperature is between 50°C and 80°C, the first pressure is between 1MPa and 10MPa, and the first time is between 5 seconds and 40 seconds. The manufacturing method of claim 12, wherein the second temperature ranges between 140°C and 200°C, the second pressure is between 50MPa and 100MPa, and the second time is 5 seconds and 60 seconds.

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