TWI755085B - 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents

附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDF

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TWI755085B
TWI755085B TW109134273A TW109134273A TWI755085B TW I755085 B TWI755085 B TW I755085B TW 109134273 A TW109134273 A TW 109134273A TW 109134273 A TW109134273 A TW 109134273A TW I755085 B TWI755085 B TW I755085B
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Taiwan
Prior art keywords
film
substrate
conductive film
reflective
mask
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TW109134273A
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English (en)
Chinese (zh)
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TW202109173A (zh
Inventor
小林巧
浜本和宏
淺川竜男
笑喜勉
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW109134273A 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 TWI755085B (zh)

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JP2015-121712 2015-06-17
JP2015121712 2015-06-17

Publications (2)

Publication Number Publication Date
TW202109173A TW202109173A (zh) 2021-03-01
TWI755085B true TWI755085B (zh) 2022-02-11

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TW109134273A TWI755085B (zh) 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法
TW105118976A TWI708993B (zh) 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法

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TW105118976A TWI708993B (zh) 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法

Country Status (6)

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US (2) US10606166B2 (enExample)
JP (3) JP6815995B2 (enExample)
KR (2) KR102870729B1 (enExample)
SG (2) SG11201710317RA (enExample)
TW (2) TWI755085B (enExample)
WO (1) WO2016204051A1 (enExample)

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US10768534B2 (en) * 2018-08-14 2020-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Photolithography apparatus and method and method for handling wafer
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JP7354005B2 (ja) * 2020-02-12 2023-10-02 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US11111176B1 (en) * 2020-02-27 2021-09-07 Applied Materials, Inc. Methods and apparatus of processing transparent substrates
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US20210333717A1 (en) * 2020-04-23 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same
KR102464780B1 (ko) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
US20220283491A1 (en) * 2021-03-03 2022-09-08 Shin-Etsu Chemical Co., Ltd. Reflective mask blank, and method for manufacturing thereof
JP7567742B2 (ja) * 2021-10-01 2024-10-16 信越化学工業株式会社 反射型マスクブランク用膜付き基板、反射型マスクブランク、及び反射型マスクの製造方法
JP7669321B2 (ja) * 2022-09-01 2025-04-28 信越化学工業株式会社 反射型マスクブランクおよび反射型マスクの製造方法
JPWO2024071026A1 (enExample) * 2022-09-28 2024-04-04
JP7697609B1 (ja) * 2023-09-29 2025-06-24 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
WO2025115566A1 (ja) * 2023-11-29 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

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Also Published As

Publication number Publication date
JP2021015295A (ja) 2021-02-12
KR102653351B1 (ko) 2024-04-02
JP2022069683A (ja) 2022-05-11
KR20240046293A (ko) 2024-04-08
US10606166B2 (en) 2020-03-31
KR102870729B1 (ko) 2025-10-15
SG11201710317RA (en) 2018-01-30
US10996554B2 (en) 2021-05-04
TWI708993B (zh) 2020-11-01
TW202109173A (zh) 2021-03-01
TW201706709A (zh) 2017-02-16
JPWO2016204051A1 (ja) 2018-04-05
WO2016204051A1 (ja) 2016-12-22
KR20180018526A (ko) 2018-02-21
JP7296358B2 (ja) 2023-06-22
SG10201911400WA (en) 2020-02-27
US20180149962A1 (en) 2018-05-31
JP6815995B2 (ja) 2021-01-20
US20200192213A1 (en) 2020-06-18
JP7296499B2 (ja) 2023-06-22

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