201126015 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種依循所謂串列式概念於真空枣 境處理基板。在-較佳具體實刻巾，其描述—種用於化 學氣相沈積(CVD)氧化鋅(Zn〇)透明導電膜製作，應用於 薄膜太陽能電池。例如’絲板薄膜太陽能電池之前電極 • 與背電極層領域。更，其可用於所有適用化學氣相沈積之 大面積沈積應用中。 【先前技術】 在液晶面板與新興的_太陽能產#巾所需的透明 導電玻璃，目前有三個方式製作，最著名岐如為以「浮 動式」的玻璃配合常壓化學氣相沉積(AP-CVD)製作方 式；另-使關真2濺财式；其三制的低壓化學氣相 沈積(LP-CVD)三類。 薄膜太陽能設備中’使用的Lp伽技術_ 2_麵2間製程翻導電_，_列式直空製歡 備，統-供應氣體系統，透過分流f線將氣體均等㈣至 各別處理室Chamben pc)，而n個處理室皆可於 基板上沈積透日__，在__環_，各處理 201126015 至沈積厚度皆為總厚度的1/n ’當基板經完整流程，從加 載室接續歷經各處理室，最後至卸載密室可達到所需厚 度。以上述LP-CVD技術可以獲得大面積且具有一定霧度 之透明導賴’此具霧度透明導電闕合應胁光伏元件 中。本專利利用更改化學品輸送管線以控制處理室氣氛方 法，獲得南霧度之透明導電薄膜及功能性複合疊層，尤其 更利於光伏元件應用。 【發明内容】 一種用於串列式真空處理基板之設備，其包括：至少 一個加載室、至少兩個後續沈積真空室、至少一個卸載 至、一化學品統一供應系統、及輸送化學品至各處理室之 管線。 一種依據本發明之用於在串列式真空處理系統中，將 薄膜沈積於基板上的方法，其包含下列步驟：a)將一第 一基板引入一加載室中；降低該室中之壓力；b)將該第 一基板轉運至一第一處理室中；c)使用一第一組沈積參 數’將第一材料層至少部分地沈積於該第一基板上；d)將 該第一基板轉運至該串列式系統之第二處理室中而不致 201126015 破壞真空；e)在第二處理室，以第二組製程設定參數， 沈積第二層薄膜；f)將基板從第二處理室傳送至第三處 理室，過程中不破真空；g)在第三處理室，以第三_ 程設疋參數’沈積第三層薄膜；h)依序傳送至後續處理 室’在各處理室沈積所需不同材質之薄獏；i)將該第一 基板轉運至-卸魅巾；自該系統移除該第—基板，其令 在步驟Ο的同時，將在該串列式真空系統中，依據步称 d)處理一第二基板。 【實施方式】 第一圖係顯示具有4個處理室(pC)之本發明具體實施 例’而具有至少2個PC之其他架構亦可能經濟實用。基 板，I父佳地為破璃，厚度範圍介於3與5_之間。基板 係藉由-輸送帶系統，而自加載工作站輪運至―加载室 娜中。在加载室106内，勤係藉由真空泵ι〇ι而降低 至容許基板進-步轉運之位準。該等基板係藉由一 紅外線加熱H加熱。-旦相了操健力及所需基板溫 度’該等基板將在該加載室中等待，直到在後續處理室扣 1〜4 107〜110令繼續進行之處理已完成為止。當對該等處 201126015 理室清潔及後續抽崎至大約G lmbai>操健力後，「加 載室」106與PC 1之間的一閑閥112、及pC 4與一「卸 載室」in之間的閘閥113將打開，且該等基板將藉複數 個滾子而輸運貫通該系統，直到抵達其定位為止。PC 4 中之基板將近人卸魅111，而先前在PC 3中處理之基板 將定位於PC4中，以此類推。201126015 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a substrate for processing a vacuum in accordance with the so-called tandem concept. In the preferred embodiment, a description is made for a chemical vapor deposition (CVD) zinc oxide (Zn〇) transparent conductive film for use in a thin film solar cell. For example, the front electrode of the silk plate thin film solar cell and the field of the back electrode layer. Furthermore, it can be used in all large area deposition applications where chemical vapor deposition is suitable. [Prior Art] The transparent conductive glass required for liquid crystal panels and emerging solar panels is currently produced in three ways, most notably the "floating" glass with atmospheric pressure chemical vapor deposition (AP- CVD) production method; another - make Guanzhen 2 splash type; its three systems of low pressure chemical vapor deposition (LP-CVD) three categories. In the thin-film solar equipment, the 'Lp gamma technology used _ 2 _ 2 process turn conductive _, _ column straight air hoist, the system - supply gas system, equalize the gas through the split f line (four) to the respective processing room Chamben Pc), and n processing chambers can be deposited on the substrate __, in __ ring _, each process 201126015 to deposition thickness is 1 / n of the total thickness of the substrate through the complete process, from the loading chamber The desired thickness can be achieved through the various processing chambers and finally to the unloading chamber. A large-area and hazy transparent guide can be obtained by the above-described LP-CVD technique, which is a hazy transparent conductive composite. This patent utilizes a modified chemical transfer line to control the process chamber atmosphere to obtain a south haze transparent conductive film and a functional composite laminate, especially for photovoltaic component applications. SUMMARY OF THE INVENTION An apparatus for a tandem vacuum processing substrate includes: at least one loading chamber, at least two subsequent deposition vacuum chambers, at least one unloading to, a chemical uniform supply system, and transporting chemicals to each Processing room pipeline. A method for depositing a thin film on a substrate in a tandem vacuum processing system according to the present invention, comprising the steps of: a) introducing a first substrate into a loading chamber; reducing a pressure in the chamber; b) transporting the first substrate into a first processing chamber; c) depositing a first material layer at least partially on the first substrate using a first set of deposition parameters; d) transporting the first substrate To the second processing chamber of the tandem system without breaking the vacuum in 201126015; e) depositing a second layer of film in the second processing chamber with a second set of process settings; f) transferring the substrate from the second processing chamber To the third processing chamber, the vacuum is not broken during the process; g) in the third processing chamber, the third layer film is deposited by the third parameter ; parameter; h) is sequentially transferred to the subsequent processing chamber 'deposition chamber in each processing chamber Relying a thin material of different materials; i) transporting the first substrate to the detachable towel; removing the first substrate from the system, so that in the step Ο, in the tandem vacuum system, Step d) processing a second substrate. [Embodiment] The first figure shows a specific embodiment of the present invention having four processing chambers (pC), and other architectures having at least two PCs may be economical and practical. The base plate, I father is a broken glass, the thickness range is between 3 and 5_. The substrate is transported from the loading station to the loading chamber by the conveyor system. In the loading chamber 106, the diligent system is lowered by the vacuum pump to a level that allows the substrate to be transported further. The substrates are heated by an infrared heating H. The substrate will be in a state of robustness and the required substrate temperature. The substrates will wait in the loading chamber until the subsequent processing chamber decels 1 to 4 107 to 110 to continue the processing. After the cleaning of the office and the follow-up to approximately lmbai>, the idle valve 112 and pC 4 between the "loading chamber" 106 and the PC 1 and an "unloading chamber" in The inter-gate valve 113 will open and the substrates will be transported through the system by a plurality of rollers until they are positioned. The substrate in PC 4 will be unobtrusive 111, while the substrate previously processed in PC 3 will be positioned in PC4, and so on.
心明之一具體實施製備硼參雜氧化鋅(ZnO:B)薄 膜例中，第二圖。處理室PC 1到PC .4雖使用共同之化 子供應系、'先216，但各處理室皆可透過化學品輸送管線 上之流量器209、211、213、215，獨立調控進入腔室之各 反應物種類及其流量大小。第二圖為一示範概略圖示，各 處理室至少兩個或_以上氣體輸送管線，管、線皆配置有 流量控以調控流量。調變範圍包含：⑴通入反應物 麵，沈積翻導電膜時透過改變摻轉摻雜量，可以因 摻雜比例不同而影響導電度、表面形貌與光穿透度;(2)改 變通入反應物氧源(如：水、雙氧水、氧、臭氧、笑氣)比 例，可控制透明導電膜氧空缺，達到所需電阻性質；亦可 不通入乳源’獲得金屬_沈積。（3)改變通人流量，可 以改變沉積速率及_微結構。若_處理室氣氛有所差 201126015 異，則加入一緩衝區域，如第二圖中PC 2與PC 3之間的 緩衝區域204。 在本發明之另一具體實施製備ZnO:B薄膜例中，第 一圖。處理室PC 1到pC4使用共同之化學品供應系統， 利用流量控制器312控制化學品進入化學品輸送管線313 流置，而於個別化學品供應分流管線314裝設流量控制器 307、308、309、310，如質量流量控制器、節流閥或過濾 器。加載室301與處理室組3〇2〜3〇5及卸載室3〇6依序串 聯，節流閥可控制個別腔室反應氣體進氣量多寡。第三圖 為一示範概略圖示，各處理室至少兩個或兩個以上化學品 輸送管線，輸送管線皆配置有流量控制器以調控進入處理 至之流畺。可调變範圍包含：（1)改變通入反應物氧源(如： 水、雙氧水、氧、臭氧、笑氣)比例，可控制透明導電膜 氧空缺，達到所需電阻性質，亦可不通入氧源，獲得金屬 薄膜沈積。（2)改變通入流量，可以改變沉積速率及薄膜 微結構。 在本發明與先前技藝最大差異在於製程化學品供靡 具有選擇性，透過流量控制器、節流閥或過濾器控制進入 個別處理室的氣體流量與氣氛。此設計應用於透明導電薄 [S] 7 201126015 膜製程設備，可改變摻雜量多寡或/及反應物氧源比例或/ 及通入之流量，這些變化可直接影響薄膜導電性、表面形 貌、光穿透度與微結構。 依據以上說明的一種用於在串列式系統中處理基板 之創造性方法，可藉由在〇.3mbar與Umbar間之一壓力 範圍内呈氣相的二乙基鋅與水混合，溫度介於攝氏16〇度 至210度之間，較佳地為190度，來達成沈積氧化辞薄膜。 二硼烷(B2H6)可加入反應混合物中，以達成透明導電氧化 物(TCO)層之適度摻雜。各處理室溫度不限定一致，必要 時可透過製程參數些微差異調整，以獲得符合需求之薄 膜。此外’也可透光或賴翁，明加反應物解離 率、提昇反應物有效使料、增加_沈積速率、降低製 程溫度及;辅電性特質。具體處理實施例有二： 處理方法實闕-：基_明非導電_透明導電薄膜 以lp-CVD設備，如第二圖，進行多層薄膜材料堆疊 沈積，各處理室有個別控制氣體供應機構。本實施例中， 因先後製作未摻_之金屬氧化膜(透日轉導魏)與換雜 棚之金屬氧⑽(透料_)，需分職立控制二概 (眺)氣體供應。材料堆纽積其各處理室製程 201126015 >數。又&不盡㈣’相鄰之處理室間或有氣氛交又干擾問 題’所以或許需要插入一不通入化學反應物之處理室權充 緩衝區域或_鄰處理室_部健減排除擴散至兩 相4處理至父界處之氣氛。基板在串接的個別處理室靜置 鍍膜並依序推移，故最終薄膜之材質纽成及厚度為基板在 個別處理室鍍膜之累加堆疊結果。 • 基板於PC 1 202及PC 2 203製程時，不供應摻雜源 以沈積透明非導電膜’為避免反應氣氛交叉污染，可於 PC2及PC3之間增設-緩衝區2〇4，緩衝區以局部低壓做 成區隔’後續於PC 3 205及PC 4 206供應摻雜源二概 以沈積透明導電膜。 基板401為一含90〇/〇以上Si〇2之材料或一_之硬 • f材料。於第一和第二處理室製程參數-致，但各別控制 通入之反應氣體。透過通入有機金屬鋅化合物（例如：二 乙基鋅(DEZ)、二f基鋅(DMZ))、水氣及氫氣㈣或氬氣 (Ar)等氣體，DEZ與邮流量比為！ ： ！ 2，基板加熱i赃， 沈積速率為2.8mn/S，沈積時間為5min，透明非導電薄膜 (a) 402即可堆疊沈積於基板401上。 於第二處理室以透過通入有機金屬鋅化合物（例如：二 201126015 乙基鋅(DEZ)、二曱基鋅(DMZ))、水氣及氫氣(h2)或氬氣 (Ar)等氣體’DEZ與Ηβ流量比為ι:1 2,基板加熱i9〇°c， 沈積速率為2.8 rnn/s ’沈積時間為5 min，透明非導電薄膜 (b) 403沈積於上述處理室所沈積之薄膜，同質透明非導電 層厚度為第一及二處理室沈積厚度累加。 於第三處理室過通入有機金屬鋅化合物（例如：二乙 • 基鋅(DEZ)、二曱基鋅(DMZ))、水氣、二硼烷(2%B2H6 in Η2)及氫氣(¾)或氬氣(Ar)等氣體，DEZ與H20流量比為 1 : 1.2，B2H6/DEZ 流量比為 0.64 5，基板加熱 19〇〇c， 沈積速率為2.6 nm/s，沈積時間為5 min，透明導電薄膜⑻ 404即可沈積於基板歷經先前處理室所沉積的透明非導電 薄膜(b)403上。 φ 於第四處理室設定製程參數和第三處理室一致，相同 成分組成及厚度之透明導電薄膜(b) 4〇5即可沈積於先前 處理室所沉積的透明導電薄膜⑷4〇4上。 以先前技藝設備沈積金屬氧化物，除了有、無摻雜硼 差異外，其他製程參數，如溫度、壓力、氣體流量皆相同， 沈積相同厚度之金屬氧化膜，其霧度分別為 24.57 與 73.84。若先沈積未摻雜硼之金屬氧化膜一半厚度，而後將 201126015 、積基板移出在大氣氣氛，再進入至另-沈積設備中沈 机雜爛之金屬氧化膜，所得薄膜霧度為34.8卜亦可有 效提…專膜霧度。本實施例處理方法為，第一、二處理室 '尤積材料為Zn〇，第三、四處理室，沈積材料為Zn〇:B， ^中王絲持於真空環境下，製得薄膜霧度達 40.69， 優於上述製程麵祕在域氣氛絲。·A量測結 • 果，第五圖。 處理方法實施例二： 以設備單—化學品輸送管線連接分流管均等分接到 個別處理至，特定分流管路以流量控制器3❶7〜⑽，達成 分流管各處理室分流量差異，如第三圖。本例，通往 PC 1之分流管施錄小開孔率之過㈣，而導入其它處 • ㈣之分齡路轉先前的孔取小，㈣pc彳氣體通量 降低，PC 2〜4氣體通量相對增加。先前技藝分流管路未 施加過遽器之各處理室具相同分流量，薄膜沉積速率約為 2.17nm/SeC;本創作在PCu流管節流薄膜沉積速率約 為0.67 nm/sec ’未節流之其它後續處理室薄膜沉積速率 則約為2.67nm/sec。因所有管線總和流量不變，所以基 板通過PC 1〜4後’薄膜沈積整體厚度和先前技藝所得— 201126015 致。先前技藝與摘作她，_厚度的_沈積，光學 霧度分別為6.15及1〇.87，即林_製程方式製備之薄 膜可獲得較高霧度，且透過XRD觀察得知，經製程優化 結果⑽)訊號㈣顯，與捕技藝有所差別，第六圖。 先前技藝與本創作運料非晶薄膜太陽能電池模組之前 電極，11QQmmx _咖尺寸電池模組功率輪出瓦數分 別為115W及118W，㈣本創·财式可提高非晶薄 膜太陽能電池模組輸出功率。 藉由上述設備與方法’補作提供-軸單-設備沈 積多層薄職赎娜表面雜之方法，㈣上所述者僅 為本創作之|x佳貫例，當不能以此限定本創作實施之範圍； 故’凡依本創作申請專利範圍及_說明之内容所做的簡 單的等效變化與料，皆應仍屬本創作專利涵蓋之範圍 内。 【圖式簡單說明】 第一圖係本創作導電膜製作設備示意圖。 第二圖係本創作導電膜製作設備之化學品供應管線配置。 第三圖係本創作導電膜製作設備之化學品供應分流管線 201126015 配置。 弟四圖係本發明兩種不同材料堆豐沈積結構不意圖。 第五圖係UV- visible吸收光譜。 第六圖係先前技藝與本創作製程薄膜XRD圖譜One of the exercises is to specifically prepare a boron-doped zinc oxide (ZnO:B) thin film, the second figure. Although the processing chambers PC 1 to PC .4 use a common chemical supply system, 'first 216, each processing chamber can pass through the flow devices 209, 211, 213, 215 on the chemical delivery pipeline, and independently regulates the entry into the chamber. The type of each reactant and its flow rate. The second figure is a schematic diagram showing at least two or more gas delivery lines in each processing chamber. The tubes and lines are all equipped with flow control to regulate the flow rate. The modulation range includes: (1) access to the reaction surface, and the change of doping amount can be changed when the conductive film is deposited, which can affect the conductivity, surface morphology and light transmittance due to different doping ratios; The proportion of reactant oxygen source (such as: water, hydrogen peroxide, oxygen, ozone, laughing gas) can control the oxygen vacancy of the transparent conductive film to achieve the desired resistance property; or can not obtain the metal_deposition without entering the milk source. (3) Changing the flow rate of the person can change the deposition rate and _microstructure. If the atmosphere of the processing chamber is different, the buffer area is added, such as the buffer area 204 between the PC 2 and the PC 3 in the second figure. In the case of preparing a ZnO:B film in another embodiment of the present invention, the first figure. The processing chambers PC 1 to pC4 use a common chemical supply system, the flow controller 312 is used to control the flow of chemicals into the chemical delivery line 313, and the individual chemical supply distribution lines 314 are provided with flow controllers 307, 308, 309. , 310, such as mass flow controllers, throttles or filters. The loading chamber 301 and the processing chamber groups 3〇2 to 3〇5 and the unloading chamber 3〇6 are sequentially connected in series, and the throttle valve can control the amount of the reaction gas of the individual chambers. The third figure is a schematic diagram showing at least two or more chemical transfer lines in each process chamber, and the transfer line is equipped with a flow controller to regulate the flow into the process. The adjustable range includes: (1) changing the proportion of oxygen source (such as: water, hydrogen peroxide, oxygen, ozone, laughing gas), which can control the oxygen vacancy of the transparent conductive film to achieve the desired resistance properties, or not accessible. Oxygen source to obtain metal film deposition. (2) Changing the flow rate can change the deposition rate and the film microstructure. The greatest difference between the present invention and the prior art is that the process chemical supply is selective, and the flow rate and atmosphere of the individual process chambers are controlled by a flow controller, throttle or filter. This design is applied to transparent conductive thin [S] 7 201126015 membrane processing equipment, which can change the amount of doping or / and the proportion of reactant oxygen source or / and the flow rate of the inlet, these changes can directly affect the film conductivity, surface morphology , light penetration and microstructure. An inventive method for processing a substrate in a tandem system according to the above description may be mixed with water in a vapor phase of diethyl zinc at a pressure range between 〇3 mbar and Umbar, at a temperature in Celsius Between 16 and 210 degrees, preferably 190 degrees, a deposited oxide film is achieved. Diborane (B2H6) can be added to the reaction mixture to achieve moderate doping of the transparent conductive oxide (TCO) layer. The temperature of each processing chamber is not limited. If necessary, the process parameters can be adjusted slightly to obtain a film that meets the requirements. In addition, it can also transmit light or lyon, clear the dissociation rate of the reactants, increase the effective material of the reactants, increase the deposition rate, lower the process temperature, and the auxiliary electrical properties. There are two specific treatment examples: The treatment method is practical: - _ _ non-conductive _ transparent conductive film lp-CVD equipment, as shown in the second figure, multilayer film material stack deposition, each processing chamber has a separate control gas supply mechanism. In this embodiment, the metal oxide (10) (transparent material) of the undoped metal oxide film (transparent day) and the replacement shed are successively produced, and the gas supply is controlled separately. Material stacking and processing of its various processing chambers 201126015 > number. Also & not (4) 'there is an atmosphere between the adjacent processing rooms and interference problems', so it may be necessary to insert a processing chamber that does not pass chemical reactants into the buffer zone or _ neighboring processing room Two phases 4 are processed to the atmosphere of the fatherhood. The substrate is allowed to stand in the individual processing chambers connected in series and sequentially moved, so that the material thickness and thickness of the final film are the cumulative stacking results of the substrate coating in the individual processing chambers. • When the substrate is processed in PC 1 202 and PC 2 203, no doping source is supplied to deposit a transparent non-conductive film. To avoid cross-contamination of the reaction atmosphere, a buffer of 2〇4 can be added between PC2 and PC3. The local low voltage is made to separate the 'subsequent to the PC 3 205 and the PC 4 206 to supply the doping source 2 to deposit a transparent conductive film. The substrate 401 is a material containing 90 〇/〇 or more of Si〇2 or a hard material of f. The process parameters in the first and second process chambers are controlled, but the reactant gases are separately controlled. By the introduction of organometallic zinc compounds (for example: diethylzinc (DEZ), di-f-zinc (DMZ)), water vapor and hydrogen (iv) or argon (Ar), the ratio of DEZ to postal flow is! : ! 2. The substrate is heated to a deposition rate of 2.8 mn/s and the deposition time is 5 min. The transparent non-conductive film (a) 402 can be deposited on the substrate 401 in a stack. In the second processing chamber, an organic metal zinc compound (for example, two 201126015 ethyl zinc (DEZ), dimercapto zinc (DMZ)), water gas and hydrogen (h2) or argon (Ar) gas is passed through. The flow ratio of DEZ to Ηβ is ι:1 2, the substrate is heated i9〇°c, the deposition rate is 2.8 rnn/s′, the deposition time is 5 min, and the transparent non-conductive film (b) 403 is deposited on the film deposited in the above processing chamber. The thickness of the homogenous transparent non-conductive layer is cumulative for the deposition thicknesses of the first and second processing chambers. An organometallic zinc compound (eg, diethyl zinc (DEZ), dimercapto zinc (DMZ)), water vapor, diborane (2% B2H6 in Η2), and hydrogen (3⁄4) are passed through the third chamber. Or gas such as argon (Ar), the flow ratio of DEZ to H20 is 1:1.2, the flow ratio of B2H6/DEZ is 0.64 5, the substrate is heated to 19〇〇c, the deposition rate is 2.6 nm/s, and the deposition time is 5 min. A transparent conductive film (8) 404 is deposited on the transparent non-conductive film (b) 403 deposited on the substrate through the previous processing chamber. φ The process parameters set in the fourth processing chamber are the same as those in the third processing chamber, and the transparent conductive film (b) 4〇5 of the same composition and thickness can be deposited on the transparent conductive film (4) 4〇4 deposited in the previous processing chamber. Metal oxides were deposited by prior art equipment. Except for the difference of boron and other doping, other process parameters, such as temperature, pressure and gas flow rate, were the same. Metal oxide films of the same thickness were deposited with haze of 24.57 and 73.84, respectively. If half of the thickness of the undoped boron metal oxide film is deposited first, then the 201126015 and the substrate are removed from the atmosphere, and then enter the metal oxide film of the other machine in the deposition apparatus, and the resulting film haze is 34.8. Can effectively improve the film haze. In the treatment method of the embodiment, the first and second processing chambers are made of Zn〇, the third and fourth processing chambers, and the deposition material is Zn〇:B, and the king silk is held in a vacuum environment to obtain a film mist. The degree is up to 40.69, which is better than the above-mentioned process surface secret in the domain atmosphere. · A measurement knot • Fruit, fifth picture. The second embodiment of the treatment method: the equipment single-chemical conveying pipeline connecting the diverting tubes are equally divided into individual treatments, and the specific diverting pipelines are flow controllers 3❶7~(10), and the flow dividing tubes are different in the processing chambers, such as the third. Figure. In this case, the shunt pipe leading to PC 1 is used to record the small opening rate (4), and is introduced into other places. (4) The age-old road turns to the previous hole to take small, (4) pc彳 gas flux is reduced, PC 2~4 gas pass The amount is relatively increased. In the prior art, the processing chambers in which the splitter is not applied have the same partial flow rate, and the film deposition rate is about 2.17 nm/SeC; the deposition rate of the throttling film in the PCu flow tube is about 0.67 nm/sec. The film deposition rate of the other subsequent processing chambers was about 2.67 nm/sec. Since the total flow rate of all the pipelines is constant, the substrate passes through the PC 1~4 after the thickness of the film deposition and the prior art obtained - 201126015. Previous techniques and extracts her, _thickness _ deposition, optical haze are 6.15 and 1 〇.87, respectively, that is, the film prepared by the forest-process method can obtain higher haze, and it is known by XRD observation that the process is optimized. Results (10)) The signal (4) is different from the capture technique, the sixth picture. Prior to the previous technology and the original electrode of the amorphous film solar cell module, the 11QQmmx_coffee size battery module has a power wattage of 115W and 118W, respectively. (4) The Creativity and Finance can improve the amorphous thin film solar cell module. Output Power. By means of the above-mentioned equipment and methods, the method of providing a multi-layer, thin-handed-device deposition, and the above-mentioned method are only for the purpose of the creation of the present invention. Scope; Therefore, the simple equivalent changes and materials made by the scope of the patent application and the contents of the description should remain within the scope of this creation patent. [Simple description of the diagram] The first diagram is a schematic diagram of the fabrication equipment for the conductive film. The second figure is the chemical supply line configuration of the present conductive film fabrication equipment. The third figure is the chemical supply distribution line of the creation of the conductive film making equipment. 201126015 Configuration. The four figures of the present invention are not intended to be two different materials of the present invention. The fifth figure is the UV-visible absorption spectrum. The sixth picture is the XRD pattern of the previous process and the creative process film.
【主要元件符號說明】 101 ...加載室真空泵浦 102 •.·處理室真空泵浦 103 •··卸載室真空泵浦 104 •··化學品供應系統 105 •··化學品輸送管線組 106 ...加載室 107 • ··處理室PC 1 108 • ··處理室PC 2 109 ...處理室PC 3 110 .·.處理室PC4 111 •··卸載室 112 • ••閘閥 113 • ••閘閥 13 [S] 201126015[Main component symbol description] 101 ...Loading chamber vacuum pump 102 •. Processing chamber vacuum pump 103 •··Unloading chamber vacuum pump 104 •··Chemical supply system 105 •··Chemical transfer line group 106 .. Loading chamber 107 • ··Processing chamber PC 1 108 • ··Processing chamber PC 2 109 ...Processing chamber PC 3 110 ··Processing chamber PC4 111 •··Unloading chamber 112 • •• Gate valve 113 • •• Gate valve 13 [S] 201126015
201 • . ·加載室 202 .· ·處理室PC 1 203 •..處理室PC 2 204 •··緩衝H 205 • ··處理室PC 3 206 • . ·處理室PC 4 207 •··卸載室 208 • ·· PC 1化學品輸送管線 209 •··流量控制器 210 ·· .PC 2化學品輸送管線 211 •··流量控制器 212 ·· .PC 3化學品輸送管線 213 •··流量控制器 214 ·· .PC 4化學品輸送管線 215 •••流量控制器 216 •··化學品供應系統 301 . ··加載室201 • . • Loading chamber 202 • Handling chamber PC 1 203 • Processing chamber PC 2 204 • Buffer H 205 • • Processing chamber PC 3 206 • • Processing chamber PC 4 207 • Unloading room 208 • ·· PC 1 chemical transfer line 209 •··Flow controller 210 ·· .PC 2 chemical transfer line 211 •··Flow controller 212 ·· .PC 3 chemical transfer line 213 •··Flow control 214 ·· .PC 4 chemical delivery line 215 •••Flow controller 216 •··chemical supply system 301 . ··Loading room
302 ···處理室PCI302 ···Processing Room PCI
14 i SI 20112601514 i SI 201126015
303 • ··處理室PC 2 304 ...處理室PC 3 305 • ··處理室PC 4 306 ...卸載室 307 •··流量控制器 308 •··流量控制器 309 •••流量控制器 310 •··流量控制器 311 •··化學品供應系統 312 •··化學品輸送分流管路 313 •••流量控制器 401 · · ·基板 402 . ··第一沈積層-透明非導電薄膜(a) 403 ···第二沈積層-透明非導電薄膜(b) 404 ···第三沈積層-透明導電薄膜(a) 405 .··第四沈積層-透明導電薄膜(b)303 • ··Processing chamber PC 2 304 ...Processing chamber PC 3 305 • ··Processing chamber PC 4 306 ...Unloading chamber 307 •··Flow controller 308 •··Flow controller 309 •••Flow control 310 310 ·························································································· Film (a) 403 ···Second deposited layer-transparent non-conductive film (b) 404 ···third deposited layer-transparent conductive film (a) 405 ..·fourth deposited layer-transparent conductive film (b)