TWI744188B - 鰭式場效電晶體裝置和其形成方法 - Google Patents
鰭式場效電晶體裝置和其形成方法 Download PDFInfo
- Publication number
- TWI744188B TWI744188B TW110104832A TW110104832A TWI744188B TW I744188 B TWI744188 B TW I744188B TW 110104832 A TW110104832 A TW 110104832A TW 110104832 A TW110104832 A TW 110104832A TW I744188 B TWI744188 B TW I744188B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- fin
- forming
- channel
- metal
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 98
- 230000005669 field effect Effects 0.000 title claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims description 62
- 239000002052 molecular layer Substances 0.000 claims description 40
- 239000007769 metal material Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 239000002390 adhesive tape Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 269
- 238000005530 etching Methods 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000003989 dielectric material Substances 0.000 description 13
- 239000002041 carbon nanotube Substances 0.000 description 10
- 229910021393 carbon nanotube Inorganic materials 0.000 description 10
- -1 transition metal disulfides Chemical class 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910021389 graphene Inorganic materials 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 239000002074 nanoribbon Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910016001 MoSe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
一種形成鰭式場效電晶體裝置的方法,包括形成突出在基板上方的介電鰭片、在介電鰭片的上表面上方並沿著介電鰭片的第一側壁形成包括低維材料的通道層、在通道層上方形成閘極結構、在閘極結構的相對側上形成金屬源極/汲極區、在通道層上方形成通道增強層,以及在閘極結構、金屬源極/汲極區及通道增強層上方形成鈍化層。
Description
本公開涉及鰭式場效電晶體和其形成方法,且特別是涉及具有低維材料的鰭式場效電晶體。
半導體裝置用於各種電子應用,諸如個人電腦、手機、數位相機及其他電子設備。通常藉由在半導體基板上方依序沉積絕緣或介電層、導電層及半導體層的材料,並使用微影製程圖案化各種材料層以在其上形成電路部件及元件來製造半導體裝置。
半導體工業一直藉由不斷縮小最小特徵尺寸來提高各種電子部件的整合密度(例如,電晶體、二極體、電阻器、電容器等),使更多部件整合到給定區域中。隨著半導體製造製程中特徵尺寸的不斷縮小,出現了更多需要解決的挑戰。
根據本公開的實施例,提供一種形成鰭式場效應電
晶體裝置的方法,包括形成突出在基板上方的介電鰭片、在介電鰭片的上表面上方並沿著介電鰭片的第一側壁形成包括低維材料的通道層、在通道層上方形成閘極結構、在閘極結構的相對側上形成金屬源極/汲極區、在通道層上方形成通道增強層,及在閘極結構、金屬源極/汲極區及通道增強層上方形成鈍化層。
根據本公開的實施例,提供一種形成鰭式場效應電晶體裝置的方法,包括在基板上方形成介電鰭片、在介電鰭片上方形成包括低維材料的通道層、在通道層上方形成金屬閘極結構、在金屬閘極結構上方選擇性地形成自組裝分子層、在自組裝分子層上方及基板上方沉積金屬材料、將膠帶附著到金屬材料上,及剝離膠帶以移除自組裝分子層及金屬材料的上層,其中在剝離膠帶之後,金屬材料的剩餘部分在金屬閘極結構的相對側上形成源極/汲極區。
根據本公開的實施例,提供一種鰭式場效應電晶體裝置,包括基板、突出在基板上方的介電鰭片、在介電鰭片上方的閘極結構、在介電鰭片與閘極結構之間的通道層、在閘極結構與通道層之間的通道增強層,及在閘極結構的相對側上的金屬源極/汲極區,其中通道層包括低維材料,並且在介電鰭片的上表面上方並沿著介電鰭片的側壁延伸。
100:鰭式場效應電晶體裝置
100A:鰭式場效應電晶體裝置
100B:鰭式場效應電晶體裝置
100C:鰭式場效應電晶體裝置
100D:鰭式場效應電晶體裝置
100E:鰭式場效應電晶體裝置
101:基板
102:蝕刻製程
103:介電層
105:介電鰭片
105':介電層
105A:第一側壁
105B:第二側壁
105U:上表面
106:圖案化遮罩層
107:通道層
107UC:部分
108:圖案化遮罩層
109:通道增強層
110:蝕刻製程
111:圖案化遮罩層
112:蝕刻製程
113:圖案化遮罩層
114:開口
115:閘極介電層
116:閘極結構
117:閘極電極
118:間隙
119:自組裝分子層
121:源極/汲極區
121':金屬層
121P:突起
123:膠帶
124:摻雜製程
125:鈍化層
127:觸點
1000:方法
1010:步驟
1020:步驟
1030:步驟
1040:步驟
1050:步驟
1060:步驟
2301:自組裝分子
2302:自組裝分子
2305:自組裝分子
A-A,B-B,C-C:截面
D1,D2:長度
D3,D4:寬度
H:頭基
Lch:通道長度
Lg:閘極長度
LSAM:長度/厚度
R:端基
當結合附圖閱讀時,從以下詳細描述中可以最好地
理解本公開的各方面。應注意,根據工業中的標準方法,各種特徵未按比例繪製。實際上,為了清楚地討論,可任意增加或減少各種特徵的尺寸。
第1A圖、第1B圖、第2A圖、第2B圖、第3A圖、第3B圖、第4A圖、第4B圖、第5A圖、第5B圖、第6A圖至第6C圖、第7A圖、第7B圖、第8A圖至第8C圖、第9A圖、第9B圖、第10A圖、第10B圖、第11圖、第12A圖、第12B圖、第13A圖至第13C圖及第14A圖至第14C圖繪示根據一個實施例的處於不同製造階段的鰭式場效應電晶體裝置的橫截面視圖。
第15A圖至第15C圖繪示根據一個實施例的鰭式場效應電晶體裝置的橫截面視圖。
第16A圖至第16C圖及第17A圖至第17C圖繪示根據一個實施例的在不同製造階段的鰭式場效應電晶體裝置的橫截面視圖。
第18A圖至第18D圖及第19A圖至第19D圖繪示根據一個實施例的在不同製造階段的鰭式場效應電晶體裝置的橫截面視圖。
第20A圖至第20D圖繪示根據另一實施例的鰭式場效應電晶體裝置的橫截面視圖。
第21A圖至第21D圖及第22A圖至第22D圖繪示根據又一實施例的在不同製造階段的鰭式場效應電晶體裝置的橫截面視圖。
第23圖繪示在一些實施例中的自對準分子的結構。
第24圖繪示在一些實施例中的形成半導體裝置的方法的流程圖。
為了實現提及主題的不同特徵,以下公開內容提供了許多不同的實施例或示例。以下描述組件、配置等的具體示例以簡化本公開。當然,這些僅僅是示例,而不是限制性的。例如,在以下的描述中,在第二特徵之上或上方形成第一特徵可以包括第一特徵和第二特徵以直接接觸形成的實施例,並且還可以包括在第一特徵和第二特徵之間形成附加特徵,使得第一特徵和第二特徵可以不直接接觸的實施例。另外,本公開可以在各種示例中重複參考數字和/或字母。此重複是為了簡單和清楚的目的,並且本身並不表示所討論的各種實施例和/或配置之間的關係。
此外,本文可以使用空間相對術語,諸如「在…下面」、「在…下方」、「下部」、「在…上面」、「上部」等,以便於描述一個元件或特徵與如圖所示的另一個元件或特徵的關係。除了圖中所示的取向之外,空間相對術語旨在包括使用或操作中的裝置的不同取向。裝置可以以其他方式定向(旋轉90度或在其他方向上),並且同樣可以相應地解釋在此使用的空間相對描述符號。
在一些實施例中,藉由形成突出在基板上方的介電鰭片,並在介電鰭片的上表面上方並沿著介電鰭片的第一
側壁形成通道層來形成鰭式場效應電晶體(fin field-effect transistor,FinFET)元件,其中通道層包括低維材料。接著,在通道層上方形成閘極結構,並且在閘極結構的相對側上形成金屬源極/汲極區。隨後,在通道層上方形成通道增強層,並且在閘極結構、金屬源極/汲極區及通道增強層上方形成鈍化層。
第1A圖、第1B圖、第2A圖、第2B圖、第3A圖、第3B圖、第4A圖、第4B圖、第5A圖、第5B圖、第6A圖至第6C圖、第7A圖、第7B圖、第8A圖至第8C圖、第9A圖、第9B圖、第10A圖、第10B圖、第11圖、第12A圖、第12B圖、第13A圖至第13C圖及第14A圖至第14C圖繪示了根據一個實施例的處於不同製造階段的鰭式場效應電晶體裝置100的橫截面視圖。在本文的全文論述中,具有相同數字但不同字母的圖式(例如,第1A圖及第1B圖)繪示了同一裝置在同一製造階段沿著不同橫截面的橫截面視圖。此外,具有相同字母的圖式(例如,第1A圖及第2A圖)繪示了沿著同一橫截面的橫截面視圖。
參看第1A圖,在基板101上方連續形成介電層103及介電層105'。接著,在介電層105'上方形成圖案化遮罩層106,諸如圖案化的光阻。隨後執行蝕刻製程102,以使用圖案化遮罩層106做為圖案化遮罩來圖案化介電層105'。第1B圖繪示了第1A圖的鰭式場效應電晶體裝置100的俯視圖,而第1A圖繪示了沿第1B圖的截面A-A
截取的鰭式場效應電晶體裝置100的橫截面圖。
基板101可以是半導體基板,諸如塊體半導體、絕緣體上半導體(semiconductor-on-insulator,SOI)基板等,其可為摻雜(例如,使用P型或N型摻雜劑)或未摻雜的。基板101可以是晶圓,諸如矽晶圓。一般來說,絕緣體上半導體基板是形成在絕緣層上的半導體材料層。絕緣層可以是例如埋藏式氧化物(buried oxide,BOX)層、氧化矽層等。絕緣層設置在基板上,此基板通常是矽基板或玻璃基板。亦可使用其他基板,諸如多層或梯度基板。在一些實施例中,基板101的材料可包括矽、鍺、化合物半導體(包括碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦及/或銻化銦)、合金半導體(包括矽鍺、磷砷化鎵、砷化鋁銦、砷化鋁鎵、砷化鎵銦、磷化鎵銦及/或砷磷化鎵銦)或上述各者的組合。基板101亦可由諸如藍寶石、氧化銦錫(indium tin oxide,ITO)等其他材料形成。
介電層103由合適的介電材料形成,並且可在後續蝕刻製程102中做為蝕刻停止層(例如,反應性離子蝕刻(reactive-ion-etch,RIE)自停止層)。例如,介電層103可由不同於介電層105'的介電材料形成以提供蝕刻選擇性。介電層103的示例材料包括氮化矽、碳氮化矽、氧碳氮化矽等。介電層103可藉由合適的形成方法形成,諸如化學氣相沉積(chemical vapor deposition,CVD)、物理氣相沉積(physical vapor deposition,PVD)、電漿增強化學氣相沉積(plasma enhanced
chemical vapor deposition,PECVD)等。
在一些實施例中,介電層105'由低介電常數介電材料形成,諸如具有低於約3.0的介電常數的介電材料。介電層105'的示例材料包括氧化矽、摻氟氧化矽、摻碳氧化矽、多孔氧化矽、二維(two-dimensional,2D)絕緣體材料(例如,六方氮化硼(hexagonal boron nitride,hBN))等。可使用合適的形成方法來形成介電層105',諸如化學氣相沉積、物理氣相沉積等。介電層105'的低介電常數介電材料可幫助對所形成的鰭式場效應電晶體裝置實現更好的靜電控制。此外,低介電常數介電材料可幫助使後續蝕刻製程所形成的介電鰭片結構達到更佳的縱橫比(例如,寬高比)。
做為非限制性示例,第1A圖將介電層105'繪示為單層。在一些實施例中,介電層105'具有多層結構。例如,介電層105'可包括一層大能隙二維絕緣體材料(例如,六方氮化硼)及一層高介電常數介電材料(例如,Al2O3、HfO2等),其中二維絕緣體材料由於其原子級光滑的表面可抑制表面散射。
又參看第1A圖及第1B圖,在介電層105'上方形成圖案化遮罩層106,諸如圖案化光阻層。執行諸如各向異性蝕刻製程的蝕刻製程102以圖案化介電層105'。在蝕刻製程之後,形成介電鰭片結構105(見第2A圖及第2B圖)。為了便於論述,介電鰭片結構105亦可稱為介電鰭片105,或者在下文的論述中簡稱為鰭片105。
形成介電鰭片105的蝕刻製程102可為任何可接受的蝕刻製程,諸如反應性離子蝕刻(reactive ion etch,RIE)、中性束蝕刻(neutral beam etch,NBE)等或其組合。在所示實施例中,蝕刻製程102是各向異性的。蝕刻製程102以比蝕刻介電層103的材料更快的速率蝕刻介電層105'的材料,使得蝕刻在介電層103(亦稱為隔離層)處停止。在蝕刻製程102完成之後,藉由合適的移除製程(諸如剝離或灰化)移除圖案化遮罩層106。
第2A圖及第2B圖繪示了蝕刻製程102之後的介電鰭片105。如第2A圖所示,介電鰭片105突出在基板101及介電層103上方。在第2A圖及第2B圖的示例中,介電鰭片105具有沿著第2B圖的水平方向的縱軸(例如,沿著橫截面A-A方向)。
接著,在第3A圖及第3B圖中,通道層107(亦稱為通道材料)共形地形成在介電鰭片105及介電層103上。在一些實施例中,通道層107包括低維材料,諸如二維材料、奈米碳管、石墨烯奈米帶等。在整個說明書中,術語「低維」指厚度小的層(例如,原子級薄度),例如小於約10奈米、小於約5奈米或小於約1奈米。在一些實施例中,通道層107的厚度在約0.3奈米至約1奈米的範圍內,諸如在約0.3奈米至約0.7奈米之間。在一些實施例中,通道層107是單層(例如,一個原子層)。在一些實施例中,通道層107是具有兩個單層的雙層結構,並且在隨後的製程中,上部單層轉換為通道增強層(例如,參看第
13A圖中的通道增強層109)。
低維材料可在非常小的厚度下(例如,小至一個原子層)維持高本徵遷移率(intrinsic mobility)。原子級薄度的通道材料為出色的靜電控制提供了理想的幾何形狀。原子級薄度的主體可抑制進階製程節點中積極的裝置縮放所導致的短通道效應。在一些實施例中,原子級薄度的通道材料可具有合理的能隙大小(諸如大約1eV),使得此些材料具有半導體特性(例如能夠藉由控制電壓從斷開狀態切換至導通狀態,反之亦然),同時具有斷開狀態(例如具有極少或無漏電流)和優良的導通狀態效能(例如,當處於導通狀態時具有高電流密度)。根據原子結構,低維材料亦可形成為具有金屬或絕緣特性。例如,諸如具有八面體態結構(1T)的過渡金屬二硫化物(transitional metal dichalcogenide,TMD)的低維材料具有導電材料特性,且諸如六方氮化硼的低維材料具有絕緣材料特性。
數種低維材料(例如,半導體低維材料)可用於形成通道層107。用於通道層107的示例性低維材料包括奈米碳管網路、對準的奈米碳管、一或更多層半導體二維材料(諸如過渡金屬二硫化物)、石墨烯奈米帶等。
可藉由浸漬製程生長的單壁奈米碳管(single-wall carbon nanotube,SWCNT)來形成奈米碳管網路。在平面圖中,奈米碳管網路可能看似隨機放置的複數個筆直(或稍微彎曲)(具有不同的長度)管子。可在高溫下使用含碳前驅物,使得前驅物分解並生長碳,從
而生長對準的奈米碳管。在平面圖中,對準的奈米碳管具有在相同方向上大致對準的縱向方向,並且可具有相似的長度。過渡金屬二硫化物層包括過渡金屬及VIA族元素的化合物,此化合物藉由諸如電漿增強化學氣相沉積的沉積方法形成。過渡金屬可為鎢、鉬、鈦、釩、鈷、鎳、鋯、鎝、銠、鈀、鉿、鉭、錸、銥、鉑等。VIA族元素可為硫(S)、硒(Se)、碲(Te)等。示例性過渡金屬二硫化物層包括MoS2、WS2、WSe2、MoSe2、MoTe2等。石墨烯奈米帶為石墨烯條帶,可藉由石墨奈米切割、磊晶、諸如化學氣相沉積的沉積方法等形成。應當理解,可使用其他可接受的低維材料。在低維材料層包括諸如奈米碳管或石墨烯奈米帶的分離元件的實施例中,低維材料層可進一步包括介電材料以填充分離元件之間的空間。
又參看第3A圖及第3B圖,在形成通道層107之後,在介電鰭片105的上表面105U上方形成圖案化遮罩層108,諸如圖案化光阻。接著,執行各向異性的蝕刻製程110(諸如電漿蝕刻製程),以移除通道層107中未被圖案化遮罩層108保護的水平部分(例如,介電層103的上表面上方的部分)。在各向異性的蝕刻製程110完成之後,藉由合適的移除製程(諸如剝離或灰化)移除圖案化遮罩層108。
第4A圖及第4B圖繪示了在第3A圖及第3B圖的製程之後的鰭式場效應電晶體裝置100。如第4A圖及第4B圖所示,通道層107覆蓋介電鰭片105的上表面
105U及介電鰭片105的側壁。
接著,在第5A圖及第5B圖中,在通道層107的上表面上方形成圖案化遮罩層111,諸如圖案化光阻。接著,執行各向異性的蝕刻製程112(諸如電漿蝕刻製程)以圖案化介電鰭片105及通道層107,使得介電鰭片105及通道層107設置在圖案化遮罩層111的邊界之外的部分(例如側壁)遭到移除。各向異性的蝕刻製程112可用於微調介電鰭片105的尺寸,或者可用於切割介電鰭片105以將其與位於所形成裝置的其他區域中的其他介電鰭片(未繪示)分開。在各向異性的蝕刻製程112完成之後,藉由合適的移除製程(諸如剝離或灰化)移除圖案化遮罩層111。
第6A圖至第6C圖繪示了在第5A圖及第5B圖的製程之後的鰭式場效應電晶體裝置100。應注意,第6C圖繪示了沿第6A圖中截面B-B截取的鰭式場效應電晶體裝置100的橫截面視圖。介電鰭片105在第6B圖所示的俯視圖中以虛線繪示。
如第6A圖至第6C圖所示,在各向異性的蝕刻製程112之後,通道層107覆蓋介電鰭片105的上表面105U及介電鰭片105的第一側壁105A,而第二側壁105B未由通道層107覆蓋(例如,由通道層107曝露)。
接著,在第7A圖及第7B圖中,在第6A圖至第6C圖所示的結構上方形成圖案化遮罩層113,諸如圖案化光阻。圖案化遮罩層113的開口114的長度D1小於介電
鰭片105的長度D2,並且曝露通道層107的上表面的一部分。此外,如第7B圖所示,開口114的寬度D3大於通道層107的寬度D4,並且曝露開口114下層的介電層103的上表面的一部分。
接著,在第8A圖至第8C圖中,在介電鰭片105及通道層107上方的圖案化遮罩層113的開口114(參看第7A圖)中形成閘極結構116。在一些實施例中,閘極結構116為金屬閘極結構,並且包括閘極介電層115及閘極電極117。閘極介電層115可為例如氧化矽、氮化矽、此兩者的多個層等,並且可根據可接受的技術來沉積。在一些實施例中,閘極介電層115為高介電常數介電材料,並且在此些實施例中,閘極介電層115可具有大於約7.0的介電常數值,並且可包括鉿、鋁、鋯、鑭、鎂、鋇、鈦、鉛的金屬氧化物或矽酸鹽、上述各者的多個層及上述各者的組合。閘極介電層115的形成方法可包括分子束沉積(molecular-beam deposition,MBD)、原子層沉積(atomic layer deposition,ALD)、電漿增強化學氣相沉積等。在一些實施例中,閘極介電層115由SiO2、高介電常數介電材料(例如,Al2O3、HfO2)、絕緣的大能隙二維材料(例如,hBN),或上述各者的組合所形成。閘極介電層115的厚度可在大約0.5奈米與大約15奈米之間。如第8A圖至第8C圖所示,閘極介電層115共形地形成在介電鰭片105上方及通道層107上方。
接著,閘極電極117形成在閘極介電層115上,
並填充圖案化遮罩層113的開口114的剩餘部分(參看第7A圖)。閘極電極117可由金屬或含金屬材料形成,諸如銅、鋁、鎢等、上述各者的多個層及上述各者的組合,並可由例如電鍍、化學鍍、物理氣相沉積、化學氣相沉積或其他合適的方法形成。在形成閘極電極117之後,可執行平坦化製程(諸如化學機械研磨(chemical mechanical polishing,CMP))以從圖案化遮罩層113的上表面移除閘極介電層115及閘極電極117的材料的多餘部分。因此,所得閘極電極117及閘極介電層115的剩餘材料部分形成鰭式場效應電晶體裝置100的閘極結構116。圖案化遮罩層113隨後可藉由合適的移除製程移除,諸如剝離或灰化。
接著,在第9A圖及第9B圖中,形成自組裝分子層(self-assembled molecule,SAM)119,例如,選擇性地在閘極電極117的上表面及側壁上方形成。自組裝分子層119包括附著到閘極電極117的上表面及側壁的複數個自組裝分子。第23圖繪示了自組裝分子層的自對準分子示例。
暫時參看第23圖,第23圖繪示了自對準分子的通用模型。自組裝分子2301包括自組裝分子頭基H、自組裝分子端基R及位於自組裝分子頭基H與自組裝分子端基R之間的自組裝分子尾部。在一些實施例中,自組裝分子頭基H附著到表面(例如,閘極電極117的上表面或側壁),自組裝分子端基R藉由自組裝分子尾部連接到自組裝
分子頭基H,並像例如針或纖維從附著表面伸出。自組裝分子層119中自組裝分子的長度LSAM(見第9A圖)決定了自組裝分子層119的厚度。第23圖進一步繪示了自組裝分子2302及自組裝分子2305的兩個示例,此些分子具有不同的自組裝分子頭基H及自組裝分子端基R。
返回到第9A圖及第9B圖,選擇用於形成自組裝分子層119的自組裝分子的類型,使得自組裝分子的自組裝分子頭基H僅附著於金屬。換言之,選擇自組裝分子,使得自組裝分子層119選擇性地形成在(例如,附著到)閘極電極117的上表面及側壁。適用於自組裝分子層119的自組裝分子示例包括烷硫醇或有機膦酸。在一些實施例中,藉由將閘極電極117浸入包含自組裝分子的自組裝分子溶液中來形成自組裝分子層119。如上所述,自組裝分子的長度LSAM決定了自組裝分子層119的厚度LSAM,此又決定了閘極結構116與隨後形成的源極/汲極區121之間的距離,下文將更詳細論述。自組裝分子層119的厚度LSAM可在從3埃至約30埃的範圍內。第9A圖進一步繪示了自組裝分子層119的厚度LSAM、鰭式場效應電晶體裝置100的閘極長度Lg及鰭式場效應電晶體裝置100的通道長度Lch。在繪示的示例中,閘極長度Lg、通道長度Lch與自組裝分子層的厚度LSAM之間的關係由Lch=Lg+2×LSAM所描述。
接著,在第10A圖及第10B圖中,在第9A圖及第9B圖的結構上方形成金屬層121'。取決於所形成的裝
置類型(例如,N型或P型),金屬層121'可由N型金屬或P型金屬形成。金屬層121'的示例材料包括IIIB族金屬(例如,鈧)、IVB族金屬(例如,鈦)、VB族金屬(例如,鈮)、VIB族金屬(例如,鉻、鎢)、VIIIB族金屬(例如,鎳、鈀、鉑)、IB族金屬(例如,銀、金)、IIIA族金屬(例如,鋁)等。在一些實施例中,鈧、鈦、鉻、鎳、鋁等做為形成金屬層121'的N型金屬。在一些實施例中,鈮、鈀、鉑、金等做為形成金屬層121'的P型金屬。金屬層121'可由適合的形成方法形成,諸如物理氣相沉積、化學氣相沉積、原子層沉積等。應注意,間隙118存在於直接位於自組裝分子層119下方的閘極電極117的相對側上,此是由於自組裝分子層119將這些區域與金屬層121'阻隔開。在所示實施例中,間隙118的尺寸由自組裝分子層119的厚度LSAM決定。
接著,在第11圖中,膠帶123附著到金屬層121'的上表面。接著,剝離膠帶123。剝離的膠帶移除自組裝分子層119及金屬層121'上部(例如,上層)。
第12A圖及第12B圖繪示了剝離膠帶123之後的鰭式場效應電晶體裝置100。金屬層121'的剩餘部分形成鰭式場效應電晶體裝置100的源極/汲極區121。因為源極/汲極區121由金屬材料形成,因此源極/汲極區121亦可稱為金屬源極/汲極區121。
如第12A圖及第12B圖所示,在閘極電極117與源極/汲極區121之間存在間隙。在所示實施例中,在閘
極電極117與源極/汲極區121之間測量的位於源極/汲極區121的上表面的間隙寬度與自組裝分子層119的厚度LSAM(或自組裝分子的長度LSAM)相同。在第12A圖中,源極/汲極區121沿著介電鰭片105的第二側壁105B延伸並與之接觸。此外,在第12A圖中,源極/汲極區121沿著介電鰭片105的上表面及通道層107的上表面延伸。換言之,第12A圖中的源極/汲極區121具有設置在介電鰭片105的上表面(或通道層107的上表面)上方的突起121P。第12A圖及第12B圖中所示的源極/汲極區121的形狀僅僅是非限制性的示例。取決於自組裝分子層119的厚度(例如,厚度LSAM),源極/汲極區121的其他形狀亦是可能的(如第15A圖所示),上述及其他變化皆包括在本公開的範疇內。
接著,在第13A圖至第13C圖中,執行摻雜製程124以將通道層107的上層轉換成通道增強層109。在一些實施例中,藉由諸如電荷交換、虛擬閘控(virtual gating)等的摻雜製程124功能化通道增強層109,因而在通道增強層109中引誘傳輸電荷載流子(例如,電子或電洞)。在第13A圖至第13C圖的示例中,通道層107具有雙層結構,其具有二維低維材料的兩個單層。通道層107的上層(例如,上部單層)藉由摻雜製程124摻雜以形成通道層107的摻雜層(例如,通道增強層109)。在一些實施例中,摻雜製程124是使用包括O2、N2、一氧化氮(NO)等的氣體源執行的電漿製程。在繪示的實施例中,氣
體源包括O2氣體,隨後點燃O2氣體成為O2電漿,並且O2電漿與通道層107的上層反應(例如氧化),並將此上層轉化成通道增強層109(例如,通道層107的氧化物)。例如,通道層107可由包含W或Mo的材料形成,並且O2電漿將通道層107的上層轉化為WOx或MoOx。在一些實施例中,藉由向通道層107施加化學溶液(例如,AuCl3溶液)執行摻雜製程124,使得通道層107的上層轉換成通道增強層109。例如,通道層107(或鰭式場效應電晶體裝置100)可浸入用於摻雜製程124的化學溶液中。在一些實施例中,執行氧化氮氣體退火製程以將通道層107的上層轉換成通道增強層109。除了上述摻雜製程124之外,形成通道增強層109的其他方法亦是可能的(例如,參看第16A圖至第16B圖及其論述),並且皆包括在本公開的範圍內。
又參看第13A圖至第13C圖,取決於閘極結構116的閘極長度Lg,部分的通道層107(諸如通道層107的上層中直接位於閘極電極117下方的部分,)可轉換或可不轉換成通道增強層109。第13A圖繪示了通道層107的上層完全轉換成通道增強層109的示例。在一些實施例中,閘極電極117可阻擋通道層107中直接位於閘極電極117下方的一部分(例如,部分107UC)免於經歷摻雜製程124,因此,通道層107的上層的部分107UC(由虛線繪示)未轉換成通道增強層109,而通道層107的上層的其他部分轉換成通道增強層109。
接著參看第14A圖至第14C圖,鈍化層125形成在第13A圖至第13C圖的結構上方,並且觸點127形成在鈍化層125中以電性耦合到源極/汲極區121。
在一些實施例中,鈍化層125包括適合的介電材料,諸如氧化矽、高介電常數介電材料(例如,Al2O3、HfO2)、絕緣的大能隙二維材料(例如,hBN)等,或上述各者的組合,上述介電材料藉由諸如物理氣相沉積、化學氣相沉積、原子層沉積等適合的形成方法形成。接著,在鈍化層125中形成開口,例如藉由微影製程及蝕刻技術,以曝露源極/汲極區121。接著,在開口中形成觸點127,亦稱為接觸插塞或源極/汲極觸點。觸點127可由導電材料形成,諸如銅、鋁、鎢等、上述各者的組合或上述各者的多個層,並且可由例如電鍍、化學鍍、物理氣相沉積、化學氣相沉積或其他合適的方法形成。第14B圖繪示了鰭式場效應電晶體裝置100的俯視圖,其中介電鰭片105及金屬源極/汲極區121以虛線繪示,因為其在俯視圖中不可見。
如技術人員所理解,可在第14A圖至第14C圖的製程之後執行額外的製程來完成鰭式場效應電晶體裝置100的製造。例如,額外的介電層及介電層中額外的導電特徵(例如,通孔及金屬線)可形成在鈍化層125上方,以形成鰭式場效應電晶體裝置100的互連結構。此處不描述細節。
第15A圖至第15C圖繪示了根據一個實施例的鰭
式場效應電晶體裝置100A的橫截面視圖。鰭式場效應電晶體裝置100A類似於第14A圖至第14C圖中的鰭式場效應電晶體裝置100,但金屬源極/汲極區121不具有形成在介電鰭片105的上表面上方的突起121P(參看第12A圖)。此可藉由在第9A圖的製程中增大自組裝分子層119的厚度LSAM來實現。因此,閘極電極117與金屬源極/汲極區121之間的間隙增大,並且金屬源極/汲極區121沿著介電鰭片105的第二側壁105B延伸,但是不沿著介電鰭片105的上表面延伸。
第16A圖至第16C圖及第17A圖至第17C圖繪示了根據一個實施例的鰭式場效應電晶體裝置100B在不同製造階段的橫截面視圖。鰭式場效應電晶體裝置100B類似於第14A圖至第14C圖中的鰭式場效應電晶體裝置100,但鰭式場效應電晶體裝置100B的通道增強層109是藉由沉積製程所形成,而非對鰭式場效應電晶體裝置100的摻雜製程。具體而言,在對應於第13A圖中鰭式場效應電晶體裝置100的製程的第16A圖中,藉由在通道層107上方沉積一層材料(例如,通道層107的材料的氧化物)而形成鰭式場效應電晶體裝置100B的通道增強層109。在第16A圖至第16C圖的示例中,通道層107為半導體二維低維材料的單個單層。如第16A圖所示,通道增強層109形成在閘極電極117的相對側上,並且面向基板101的通道增強層109的下表面與閘極介電層115的面向基板101的下表面齊平。應注意,在第16A圖至第
16C圖中,通道增強層109未形成在閘極電極117下方(例如,直接下方)。
第17A圖至第17C圖繪示了鈍化層125及觸點127形成之後的鰭式場效應電晶體裝置100B。製程類似於第14A圖至第14C圖的製程,因此不再重複細節。
第18A圖至第18D圖及第19A圖至第19D圖繪示了根據一個實施例的鰭式場效應電晶體裝置100C在不同製造階段的橫截面視圖。鰭式場效應電晶體裝置100C類似於第14A圖至第14C圖中的鰭式場效應電晶體裝置100,並且可藉由類似的製程步驟形成,但是在第5A圖的蝕刻製程112期間,蝕刻製程112為選擇性蝕刻製程,其移除通道層107的曝露部分(例如,未由圖案化遮罩層111保護的部分),而實質上不侵蝕介電鰭片105。因此,在蝕刻製程112之後,設置在通道層107的橫向範圍之外(例如,不在通道層107直接下方的部分)的介電鰭片105的端部表面(例如,上表面及側壁)曝露。隨後,在與第7A圖至第7B圖、第8A圖至第8C圖、第9A圖至第9B圖、第10A圖至第10B圖及第11圖類似的製程之後,形成閘極結構116、形成自組裝分子層119、在介電鰭片105的端部上方形成金屬層121',並且形成金屬源極/汲極區121。應注意,第18D圖繪示了沿第18A圖中截面C-C截取的鰭式場效應電晶體裝置100C的橫截面視圖。
接著,在第19A圖至第19D圖中,使用摻雜製程將通道層107的上層轉換成通道增強層109,接著形成鈍
化層125,並且在類似於第13A圖至第13C圖及第14A圖至第14C圖的製程之後,在鈍化層125中形成觸點127以電性耦合到源極/汲極區121。應注意,在第19A圖的示例中,金屬源極/汲極區121沿著通道增強層109的側壁及通道層107的側壁延伸,但是不沿著通道增強層109的上表面延伸。
第20A圖至第20D圖繪示了根據另一實施例的鰭式場效應電晶體裝置100D的橫截面視圖。鰭式場效應電晶體裝置100D類似於第19A圖至第19D圖中的鰭式場效應電晶體裝置100C,但是金屬源極/汲極區121沿著通道增強層109的側壁及通道增強層109的上表面延伸。鰭式場效應電晶體裝置100C與鰭式場效應電晶體裝置100D之間的差異可能是製造期間使用的自組裝分子層119的不同厚度LSAM所致。
第21A圖至第21D圖及第22A圖至第22D圖繪示了根據又一實施例的鰭式場效應電晶體裝置100E在不同製造階段的橫截面視圖。鰭式場效應電晶體裝置100E類似於第14A圖至第14C圖中的鰭式場效應電晶體裝置100,但是金屬源極/汲極區121形成在介電鰭片105的端部上方,使得金屬源極/汲極區121不沿著介電鰭片105的第二側壁105B延伸。第21A圖至第21D圖對應於第12A圖及第12B圖中鰭式場效應電晶體裝置100的製程階段。第22A圖至第22D圖對應於第14A圖至第14C圖中鰭式場效應電晶體裝置100的製程階段。
第24圖繪示了在一些實施例中形成半導體裝置的方法1000的流程圖。應該理解,第24圖所示的實施例方法僅僅是諸多可能的實施例方法的示例。本領域技術人員將認知諸多變化、替代及修改。例如,如第24圖所示的各種步驟可添加、移除、替換、重新排列或重複。
參看第24圖,在步驟1010中,形成突出在基板上方的介電鰭片。在步驟1020中,在介電鰭片的上表面上方並沿著介電鰭片的第一側壁形成通道層,通道層包括低維材料。在步驟1030中,在通道層上方形成閘極結構。在步驟1040中,在閘極結構的相對側上形成金屬源極/汲極區。在步驟1050中,在通道層上方形成通道增強層。在步驟1060中,在閘極結構、金屬源極/汲極區及通道增強層上方形成鈍化層。
實施例可能會實現優點。例如,使用低維材料的鰭式場效應電晶體裝置結構的各種實施例為下一代裝置提供了有前途的候選鰭式場效應電晶體結構。通道層中低維材料的使用允許極佳的靜電控制,並且可抑制短通道效應。半導體低維材料的能隙大小(例如,約1eV)可允許形成的裝置處於完全斷開狀態,同時在導通狀態期間獲得高電流密度。藉由調整自組裝分子層119的厚度LSAM,可輕易調整源極/汲極區121的形狀及源極/汲極區121及閘極電極117之間的間隙尺寸以滿足不同的設計要求。
根據一個實施例,一種形成鰭式場效應電晶體裝置的方法包括形成突出在基板上方的介電鰭片、在介電鰭片
的上表面上方並沿著介電鰭片的第一側壁形成包括低維材料的通道層、在通道層上方形成閘極結構、在閘極結構的相對側上形成金屬源極/汲極區、在通道層上方形成通道增強層,及在閘極結構、金屬源極/汲極區及通道增強層上方形成鈍化層。在一個實施例中,低維材料包括二維半導體材料、奈米碳管或石墨烯奈米帶。在一個實施例中,二維半導體材料包括MoS2、WS2,或WSe2。在一個實施例中,形成金屬源極/汲極區包括在閘極結構的上表面及側壁上方選擇性地形成自組裝分子層、在自組裝分子層上方及基板上方沉積金屬層、將膠帶附著在沉積的金屬層上方,及剝離膠帶,其中剝離膠帶移除自組裝分子層及沉積的金屬層的上部,其中在剝離之後沉積的金屬層的剩餘部分形成金屬源極/汲極區,其中在剝離之後在閘極結構與金屬源極/汲極區之間存在間隙。在一個實施例中,方法進一步包括藉由調整自組裝分子層中分子的長度來調整閘極結構與金屬源極/汲極區之間的間隙的寬度。在一個實施例中,金屬源極/汲極區沿著介電鰭片的第二側壁延伸。在一個實施例中,金屬源極/汲極區進一步沿著遠離基板的通道層的上表面延伸。在一個實施例中,形成通道增強層包括執行電漿製程以將通道層的上層轉換成通道增強層。在一個實施例中,形成通道增強層包括向通道層施加化學溶液,以將通道層的上層轉換成通道增強層。在一個實施例中,形成通道增強層包括在通道層上方沉積低維材料的氧化物。在一個實施例中,方法進一步包括在鈍化層中形成開口以曝
露閘極結構及金屬源極/汲極區,及在開口中形成接觸插塞。
根據一個實施例,一種形成鰭式場效應電晶體裝置的方法包括在基板上方形成介電鰭片、在介電鰭片上方形成包括低維材料的通道層、在通道層上方形成金屬閘極結構、在金屬閘極結構上方選擇性地形成自組裝分子層、在自組裝分子層上方及基板上方沉積金屬材料、將膠帶附著到金屬材料上,及剝離膠帶以移除自組裝分子層及金屬材料的上層,其中在剝離膠帶之後,金屬材料的剩餘部分在金屬閘極結構的相對側上形成源極/汲極區。在一個實施例中,方法進一步包括在剝離之後,摻雜通道層以將通道層的上層轉換成通道增強層。在一個實施例中,摻雜通道層包括藉由執行電漿製程來摻雜通道層。在一個實施例中,沉積金屬材料包括沉積P型金屬材料或N型金屬材料。在一個實施例中,在剝離之後,在金屬閘極結構與源極/汲極區之間存在間隙,其中方法進一步包括調整自組裝分子層中分子的分子長度以調整間隙的寬度。
根據一個實施例,一種鰭式場效應電晶體裝置包括基板、突出在基板上方的介電鰭片、在介電鰭片上方的閘極結構、在介電鰭片與閘極結構之間的通道層、在閘極結構與通道層之間的通道增強層,及在閘極結構的相對側上的金屬源極/汲極區,其中通道層包括低維材料,並且在介電鰭片的上表面上方並沿著介電鰭片的側壁延伸。在一個實施例中,低維材料包括二維半導體材料、奈米碳管或石
墨烯奈米帶,其中通道增強層為通道層的摻雜層。在一個實施例中,通道層覆蓋介電鰭片的上表面的第一部分,並曝露介電鰭片的上表面的第二部分,其中面向基板的金屬源極/汲極區的下表面接觸介電鰭片的上表面的第二部分。在一個實施例中,通道增強層包括通道層的氧化物。
前面概述一些實施例的特徵,使得本領域技術人員可更好地理解本公開的觀點。本領域技術人員應該理解,他們可以容易地使用本公開做為設計或修改其他製程和結構的基礎,以實現相同的目的和/或實現與本文介紹之實施例相同的優點。本領域技術人員還應該理解,這樣的等同構造不脫離本公開的精神和範圍,並且在不脫離本公開的精神和範圍的情況下,可以進行各種改變、替換和變更。
1000:方法
1010:步驟
1020:步驟
1030:步驟
1040:步驟
1050:步驟
1060:步驟
Claims (10)
- 一種形成鰭式場效應電晶體裝置的方法,包括:形成突出在一基板上方的一介電鰭片;在該介電鰭片的一上表面上方並沿著該介電鰭片的一第一側壁形成一通道層,該通道層包括一低維材料;在該通道層上方形成一閘極結構;在該閘極結構的相對側上形成一金屬源極/汲極區;在該通道層上方形成一通道增強層;及在該閘極結構、該金屬源極/汲極區及該通道增強層上方形成一鈍化層。
- 如請求項1所述之方法,其中形成該金屬源極/汲極區包括:在該閘極結構的一上表面及側壁上方選擇性地形成一自組裝分子層;在該自組裝分子層上方及該基板上方沉積一金屬層;將一膠帶附著在沉積的該金屬層上方;及剝離該膠帶,其中剝離該膠帶移除該自組裝分子層及沉積的該金屬層的一上部,其中在剝離之後沉積的該金屬層的一剩餘部分形成該金屬源極/汲極區,其中在剝離之後在該閘極結構與該金屬源極/汲極區之間存在一間隙。
- 如請求項2所述之方法,進一步包括藉由調 整該自組裝分子層中的分子的長度來調整該閘極結構與該金屬源極/汲極區之間的該間隙的寬度。
- 如請求項3所述之方法,其中該金屬源極/汲極區沿著該介電鰭片的一第二側壁延伸。
- 如請求項4所述之方法,其中該金屬源極/汲極區進一步沿著該通道層的遠離該基板的一上表面延伸。
- 如請求項1所述之方法,其中形成該通道增強層包括執行電漿製程以將該通道層的一上層轉換成該通道增強層。
- 如請求項1所述之方法,其中形成該通道增強層包括在該通道層上方沉積該低維材料的氧化物。
- 一種形成鰭式場效應電晶體裝置的方法,包括:在一基板上方形成一介電鰭片;在該介電鰭片上方形成一通道層,該通道層包括一低維材料;在該通道層上方形成一金屬閘極結構;在該金屬閘極結構上方選擇性地形成一自組裝分子層;在該自組裝分子層及該基板上方沉積一金屬材料; 將一膠帶附著到該金屬材料上;及剝離該膠帶以移除該自組裝分子層及該金屬材料的一上層,其中在剝離該膠帶之後,該金屬材料的一剩餘部分在該金屬閘極結構的相對側上形成一源極/汲極區。
- 一種鰭式場效應電晶體裝置,包括:一基板;一介電鰭片,突出在該基板上方;一閘極結構,在該介電鰭片上方;一通道層,在該介電鰭片與該閘極結構之間,其中該通道層包括一低維材料,並且在該介電鰭片的一上表面上方並沿著該介電鰭片的側壁延伸;一通道增強層,在該閘極結構與該通道層之間;及一金屬源極/汲極區,在該閘極結構的相對側上。
- 如請求項9所述之鰭式場效應電晶體裝置,其中該通道層覆蓋該介電鰭片的該上表面的一第一部分,並曝露該介電鰭片的該上表面的一第二部分,其中面向該基板的該金屬源極/汲極區的一下表面接觸該介電鰭片的該上表面的該第二部分。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/887,729 US11476356B2 (en) | 2020-05-29 | 2020-05-29 | Fin field-effect transistor device with low-dimensional material and method |
US16/887,729 | 2020-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI744188B true TWI744188B (zh) | 2021-10-21 |
TW202145350A TW202145350A (zh) | 2021-12-01 |
Family
ID=77569607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110104832A TWI744188B (zh) | 2020-05-29 | 2021-02-08 | 鰭式場效電晶體裝置和其形成方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11476356B2 (zh) |
KR (1) | KR102404491B1 (zh) |
CN (1) | CN113380628B (zh) |
DE (1) | DE102020116005B4 (zh) |
TW (1) | TWI744188B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10109477B2 (en) * | 2015-12-31 | 2018-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200501393A (en) * | 2003-04-03 | 2005-01-01 | Advanced Micro Devices Inc | Method for forming structures in finfet devices |
TW201335986A (zh) * | 2012-02-23 | 2013-09-01 | United Microelectronics Corp | 鰭狀結構及其形成方法 |
TW201801321A (zh) * | 2015-12-24 | 2018-01-01 | 英特爾股份有限公司 | 在閘極下具有子鰭介電區的電晶體 |
TW201824395A (zh) * | 2016-12-15 | 2018-07-01 | 台灣積體電路製造股份有限公司 | 半導體裝置及其製造方法 |
TW201913819A (zh) * | 2017-08-29 | 2019-04-01 | 台灣積體電路製造股份有限公司 | 半導體元件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100054453A (ko) | 2008-11-14 | 2010-05-25 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
KR101920713B1 (ko) | 2011-12-23 | 2018-11-22 | 삼성전자주식회사 | 그래핀 소자 및 그 제조방법 |
CN103779227B (zh) * | 2012-10-23 | 2016-08-31 | 中国科学院微电子研究所 | 鳍型场效应晶体管的制造方法 |
US8614127B1 (en) * | 2013-01-18 | 2013-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
US9711647B2 (en) | 2014-06-13 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thin-sheet FinFET device |
WO2016200971A1 (en) | 2015-06-08 | 2016-12-15 | Synopsys, Inc. | Substrates and transistors with 2d material channels on 3d geometries |
US10134915B2 (en) * | 2016-12-15 | 2018-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | 2-D material transistor with vertical structure |
US10658470B2 (en) | 2017-11-14 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device with doped phosphorene and method for doping phosphorene |
WO2019182597A1 (en) | 2018-03-22 | 2019-09-26 | Intel Corporation | Thin film transistors having double gates |
US11411119B2 (en) * | 2018-06-28 | 2022-08-09 | Intel Corporation | Double gated thin film transistors |
US11552180B2 (en) * | 2018-06-29 | 2023-01-10 | Intel Corporation | Antiferroelectric perovskite gate oxide for transistor applications |
DE102020109756A1 (de) | 2019-08-29 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistoren mit kanälen gebildet aus niedrigdimensionalenmaterialien und verfahren zum bilden derselben |
-
2020
- 2020-05-29 US US16/887,729 patent/US11476356B2/en active Active
- 2020-06-17 DE DE102020116005.4A patent/DE102020116005B4/de active Active
- 2020-08-31 KR KR1020200110528A patent/KR102404491B1/ko active IP Right Grant
-
2021
- 2021-01-26 CN CN202110101700.XA patent/CN113380628B/zh active Active
- 2021-02-08 TW TW110104832A patent/TWI744188B/zh active
-
2022
- 2022-07-25 US US17/814,620 patent/US20220359737A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200501393A (en) * | 2003-04-03 | 2005-01-01 | Advanced Micro Devices Inc | Method for forming structures in finfet devices |
TW201335986A (zh) * | 2012-02-23 | 2013-09-01 | United Microelectronics Corp | 鰭狀結構及其形成方法 |
TW201801321A (zh) * | 2015-12-24 | 2018-01-01 | 英特爾股份有限公司 | 在閘極下具有子鰭介電區的電晶體 |
TW201824395A (zh) * | 2016-12-15 | 2018-07-01 | 台灣積體電路製造股份有限公司 | 半導體裝置及其製造方法 |
TW201913819A (zh) * | 2017-08-29 | 2019-04-01 | 台灣積體電路製造股份有限公司 | 半導體元件 |
Also Published As
Publication number | Publication date |
---|---|
TW202145350A (zh) | 2021-12-01 |
CN113380628B (zh) | 2024-03-08 |
US11476356B2 (en) | 2022-10-18 |
DE102020116005B4 (de) | 2022-08-11 |
DE102020116005A1 (de) | 2021-12-02 |
US20220359737A1 (en) | 2022-11-10 |
KR102404491B1 (ko) | 2022-06-07 |
US20210376133A1 (en) | 2021-12-02 |
CN113380628A (zh) | 2021-09-10 |
KR20210148794A (ko) | 2021-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8912098B2 (en) | Self-aligned carbon electronics with embedded gate electrode | |
TWI314779B (en) | Block contact architectures for nanoscale channel transistors | |
US11437594B2 (en) | Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor | |
KR20160003343A (ko) | SiC 핀들 또는 나노와이어 템플레이트들로부터 제조되는 그래핀 나노리본들 및 카본 나노튜브들 | |
WO2012177328A1 (en) | Graphene or carbon nanotube devices with localized bottom gates and gate dielectric | |
US9786852B2 (en) | Semiconductor device with ballistic gate length structure | |
KR102397037B1 (ko) | 저-치수 물질로 형성된 채널을 가진 트랜지스터 및 그 제조 방법 | |
US20210265501A1 (en) | Low Dimensional Material Device and Method | |
US10854724B2 (en) | One-dimensional nanostructure growth on graphene and devices thereof | |
TWI744188B (zh) | 鰭式場效電晶體裝置和其形成方法 | |
CN114765135A (zh) | 半导体装置结构 | |
TWI742759B (zh) | 電晶體及其製作方法 | |
KR102433143B1 (ko) | 저차원 물질 디바이스 및 방법 | |
US12010856B2 (en) | Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor | |
CN113035958B (zh) | 一种半导体场效应晶体管及其制造方法 | |
CN110783461B (zh) | 晶体管及其制造方法 | |
TW202220101A (zh) | 半導體裝置的形成方法 | |
CN115117143A (zh) | 半导体器件及制造方法 |