TWI740015B - 用於形成光電元件之生長底材與製作這種底材之方法，以及這種底材在微顯示螢幕領域之應用 - Google Patents

用於形成光電元件之生長底材與製作這種底材之方法，以及這種底材在微顯示螢幕領域之應用 Download PDF

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Publication number
TWI740015B
TWI740015B TW107108791A TW107108791A TWI740015B TW I740015 B TWI740015 B TW I740015B TW 107108791 A TW107108791 A TW 107108791A TW 107108791 A TW107108791 A TW 107108791A TW I740015 B TWI740015 B TW I740015B
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Taiwan
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island
layer
islands
group
strain
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TW107108791A
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English (en)
Chinese (zh)
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TW201903830A (zh
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大衛 梭塔
奧利維耶 雷道斯
奧利維耶 波寧
尚馬克 貝圖
摩根 洛基歐
拉斐爾 卡米隆
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法商索泰克公司
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Priority claimed from FR1752230A external-priority patent/FR3064108B1/fr
Priority claimed from FR1852155A external-priority patent/FR3079070B1/fr
Priority claimed from FR1852156A external-priority patent/FR3079071B1/fr
Application filed by 法商索泰克公司 filed Critical 法商索泰克公司
Publication of TW201903830A publication Critical patent/TW201903830A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

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  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW107108791A 2017-03-17 2018-03-15 用於形成光電元件之生長底材與製作這種底材之方法，以及這種底材在微顯示螢幕領域之應用 TWI740015B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
FR1752230A FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1752230 2017-03-17
FR1852155 2018-03-13
FR1852156 2018-03-13
FR1852155A FR3079070B1 (fr) 2018-03-13 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins presentant une variete de parametres de maille
FR1852156A FR3079071B1 (fr) 2018-03-13 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille

Publications (2)

Publication Number Publication Date
TW201903830A TW201903830A (zh) 2019-01-16
TWI740015B true TWI740015B (zh) 2021-09-21

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TW107108791A TWI740015B (zh) 2017-03-17 2018-03-15 用於形成光電元件之生長底材與製作這種底材之方法，以及這種底材在微顯示螢幕領域之應用

Country Status (8)

Country Link
US (1) US20210210653A1 (enExample)
EP (2) EP3596756B1 (enExample)
JP (2) JP7053055B2 (enExample)
KR (1) KR102456048B1 (enExample)
CN (1) CN110447100B (enExample)
SG (1) SG11201908017RA (enExample)
TW (1) TWI740015B (enExample)
WO (1) WO2018167426A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3103627B1 (fr) * 2019-11-25 2023-03-24 Soitec Silicon On Insulator Procede de production d'un substrat comprenant une etape de traitement thermique de relaxation
TWI905261B (zh) * 2021-09-09 2025-11-21 晶元光電股份有限公司 光電元件

Citations (4)

* Cited by examiner, † Cited by third party
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US20020136932A1 (en) * 2001-03-21 2002-09-26 Seikoh Yoshida GaN-based light emitting device
US20090045394A1 (en) * 2007-08-16 2009-02-19 Tim Michael Smeeton Semiconductor device and a method of manufacture thereof
CN101540357A (zh) * 2008-03-19 2009-09-23 中国科学院半导体研究所 控制自组织铟镓砷量子点成核的生长方法
CN102214759A (zh) * 2010-04-05 2011-10-12 Lg伊诺特有限公司 发光器件、发光器件封装以及照明系统

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JP2751963B2 (ja) * 1992-06-10 1998-05-18 日亜化学工業株式会社 窒化インジウムガリウム半導体の成長方法
JPH10500535A (ja) * 1994-10-11 1998-01-13 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 複数の波長で光を発生するための発光ダイオードのモノリシック・アレイ及びそれをマルチカラー・デイスプレイに応用するための使用方法
JP2004022969A (ja) 2002-06-19 2004-01-22 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JP4706204B2 (ja) * 2004-08-06 2011-06-22 セイコーエプソン株式会社 半導体基板の製造方法および半導体装置の製造方法
US7888197B2 (en) * 2007-01-11 2011-02-15 International Business Machines Corporation Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer
EP2151856A1 (en) 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relaxation of strained layers
TWI457984B (zh) * 2008-08-06 2014-10-21 Ｓ Ｏ Ｉ Ｔｅｃ絕緣層上矽科技公司 應變層的鬆弛方法
EP2151852B1 (en) 2008-08-06 2020-01-15 Soitec Relaxation and transfer of strained layers
FR2936903B1 (fr) 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101408475B1 (ko) * 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
JP5789782B2 (ja) 2010-05-20 2015-10-07 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
FR2992465B1 (fr) 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
CN105051921A (zh) 2013-03-15 2015-11-11 索泰克公司 具有包含InGaN的有源区的发光二极管半导体结构体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020136932A1 (en) * 2001-03-21 2002-09-26 Seikoh Yoshida GaN-based light emitting device
US20090045394A1 (en) * 2007-08-16 2009-02-19 Tim Michael Smeeton Semiconductor device and a method of manufacture thereof
CN101540357A (zh) * 2008-03-19 2009-09-23 中国科学院半导体研究所 控制自组织铟镓砷量子点成核的生长方法
CN102214759A (zh) * 2010-04-05 2011-10-12 Lg伊诺特有限公司 发光器件、发光器件封装以及照明系统

Also Published As

Publication number Publication date
WO2018167426A2 (fr) 2018-09-20
WO2018167426A3 (fr) 2018-11-22
KR102456048B1 (ko) 2022-10-19
SG11201908017RA (en) 2019-10-30
JP2022087136A (ja) 2022-06-09
KR20190123347A (ko) 2019-10-31
TW201903830A (zh) 2019-01-16
JP7322329B2 (ja) 2023-08-08
US20210210653A1 (en) 2021-07-08
EP4033531B1 (fr) 2023-08-02
EP3596756B1 (fr) 2023-02-15
CN110447100A (zh) 2019-11-12
EP4033531A1 (fr) 2022-07-27
EP3596756A2 (fr) 2020-01-22
JP2020512684A (ja) 2020-04-23
JP7053055B2 (ja) 2022-04-12
CN110447100B (zh) 2023-07-18

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