TWI739865B - Ｍｎ－Ｚｎ－Ｏ系濺鍍靶及其製造方法 - Google Patents

Ｍｎ－Ｚｎ－Ｏ系濺鍍靶及其製造方法 Download PDF

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TWI739865B
TWI739865B TW106124220A TW106124220A TWI739865B TW I739865 B TWI739865 B TW I739865B TW 106124220 A TW106124220 A TW 106124220A TW 106124220 A TW106124220 A TW 106124220A TW I739865 B TWI739865 B TW I739865B
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target
powder
sputtering target
sputtering
elements
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TW106124220A
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TW201816158A (zh
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菅原淳一
加守雄一
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日商迪睿合股份有限公司
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract

本發明提供一種可供進行DC濺鍍之Mn-Zn-O系濺鍍靶及其製造方法。本發明之Mn-Zn-O系濺鍍靶於成分組成中含有Mn、Zn、O及元素X(其中，X為選自由W及Mo所組成之群中之單獨1種或2種元素)，其特徵在於：上述靶之被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下。

Description

Mn-Zn-O系濺鍍靶及其製造方法
本發明係關於一種Mn-Zn-O系濺鍍靶及其製造方法，尤其關於一種適合用於形成光資訊記錄媒體之記錄層的成分組成中含有元素X(X為W或Mo)之Mn-Zn-O系濺鍍靶及其製造方法。
使Ar離子等撞擊由合金或燒結體所構成之濺鍍靶之濺鍍法廣泛用於玻璃塗層、半導體元件製造、平板顯示器製造、光資訊記錄媒體(記錄型光碟)之記錄層形成等技術領域。
該等之中，例如於光資訊記錄媒體之技術領域中，隨著處理資料之增大，日益要求大容量化。此處，光資訊記錄媒體大致分為唯讀與記錄型，其中，記錄型可區分為可錄型與覆寫型該兩種。作為可錄型光碟之記錄層材料，先前對於有機色素材料進行有廣泛研究，而伴隨近年來之大容量化，亦開始對無機材料進行廣泛研究。
目前，作為可錄型光碟之無機系記錄層材料，鈀氧化物系材料已實用化。然而，由於Pd為稀有金屬，故而材料成本較高。因此，作為 材料成本低廉且可獲得十分良好之記錄特性者，開發有錳氧化物系材料。
作為此種由錳氧化物系材料構成之記錄層，專利文獻1中提出有含有Mn之氧化物與金屬Ma(其中，金屬Ma選自Mg、Mo、Si及Te)之氧化物，進而含有金屬M(選自Sn、Zn、Bi等)的Mn-Zn-Ma-O系記錄層。並且，專利文獻1揭示有共濺鍍(多元濺鍍)法作為形成上述Mn-Zn-Ma-O系記錄層之具體方法。藉由使用專利文獻1所記載之技術，於不使用稀有金屬Pd之情況下達成材料：Mn-Zn-Ma-O系記錄層。
先前技術文獻
專利文獻
專利文獻1：國際公開第2013/183277號
此處，作為藉由濺鍍法形成如由上述材料所構成之Mn-Zn-Ma-O系記錄層般含有數種元素之層的方法之一，可列舉如專利文獻1所揭示般以由各元素所構成之數個靶進行濺鍍之多元濺鍍法。作為其他方法，可列舉：以含有數種元素之1張複合靶作為單一靶進行濺鍍之方法。此處，多元濺鍍法存在「裝置大型化而導致成本增高，且易產生組成偏差」之缺點。因此，就量產化之觀點而言，較佳為使用1張複合靶，並利用DC(直流)濺鍍法。
以上揭示之專利文獻1中，作為資訊記錄媒體製作用之濺鍍靶，提出有含有Mn之氧化物、且上述Mn之氧化物之一部分或全部以Mn 之價數未達+4之氧化物狀態存在的靶。專利文獻1中進而提出，於該靶中，以上述氧化物狀態存在之Mn之氧化物較佳為不會熱分解之Mn3O4。又，亦提出該靶亦可進而含有Mn以外之金屬或該金屬之氧化物，上述金屬為選自由Sn、Zn、Bi、Ge、Co、W、Cu及Al所組成之群中之1種以上。進而提出亦可添加Zr、Al、Ta、Mo、Si、Mg、Hf、V、Ti、Sb及Te中之任意金屬元素。
然而，專利文獻1未提及具體之Mn-Zn-O系複合濺鍍靶。成分組成中含有Mn、Zn、元素X(其中，X為W或Mo)及O之Mn-Zn-O系複合濺鍍靶至今尚未確立。
因此，本發明之目的在於提供一種含有元素X(其中，X為W或Mo)之Mn-Zn-O系濺鍍靶及其製造方法。
本發明人等為了達成上述各個目的而進行銳意研究，嘗試以氧化錳粉末、氧化鋅粉末、氧化鎢粉末作為原料製作Mn-Zn-W-O系濺鍍靶。又，亦嘗試於上述Mn-Zn-W-O系濺鍍靶中，以氧化鉬粉末代替氧化鎢粉末作為原料製作Mn-Zn-Mo-O系濺鍍靶。將該等濺鍍靶供於DC濺鍍，結果明瞭會發生異常放電(亦稱為「飛弧」)。因此，嘗試將原料全部替換成上述元素之金屬粉末，分別製作Mn-Zn-W-O系濺鍍靶及Mn-Zn-Mo-O系濺鍍靶。然而，由於金屬鋅之熔點低於氧化鋅，故而可知濺鍍靶之製作本身即較困難。
因此，本發明人等想到將氧化物粉末與金屬粉末加以組合作為原料粉末製作Mn-Zn-O系濺鍍靶，本發明人等發現，藉由將所獲得之 靶之被濺鍍面之算術平均粗糙度Ra設為1.5μm以下，或將最大高度Ry設為10μm以下，即便供給進行DC濺鍍亦不會發生異常放電，從而完成本發明。
本發明係基於本發明人等之上述見解而成者，解決上述各個課題之手段如下。即，
<1>一種濺鍍靶，其係於成分組成中含有Mn、Zn、O及元素X(其中，X為選自由W及Mo所組成之群中之單獨1種或2種元素)之Mn-Zn-O系濺鍍靶，其特徵在於：上述靶之被濺鍍面之算術平均粗糙度為1.5μm以下、或最大高度Ry為10μm以下。
該<1>記載之Mn-Zn-O系濺鍍靶可供進行DC濺鍍。且，藉由該<1>記載之Mn-Zn-O系濺鍍靶，可於不發生異常放電之情況下進行DC濺鍍。
<2>如上述<1>記載之濺鍍靶，其中，相對於Mn、Zn、及上述元素X之合計100原子%，Mn：4~40原子%、Zn：15~60原子%、上述元素X：5~40原子%。
<3>如上述<1>或<2>記載之濺鍍靶，其中，上述成分組成中進而含有選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素。
<4>如上述<3>記載之濺鍍靶，其中，上述選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、 Cr、Tb所組成之群中之單獨1種或2種以上之元素的含有率相對於上述濺鍍靶之構成元素中除O以外之合計100原子%，為8~70原子%。
<5>一種濺鍍靶之製造方法，其係製造上述<1>記載之Mn-Zn-O系濺鍍靶之方法，其特徵在於包括下述步驟：混合步驟，其係對錳氧化物粉末、鋅氧化物粉末、及成分中含有上述元素X之金屬粉末進行12小時以上之濕式混合；燒結步驟，其係於該混合步驟後，將上述混合粉末於700℃以上之溫度下進行燒結；及精加工步驟，其係於該燒結步驟後，使上述靶之被濺鍍面變得平滑。
藉由該<5>記載之製造方法，可製造能夠供進行DC濺鍍之Mn-Zn-O系濺鍍靶。並且，藉由利用該<5>記載之方法所製造之Mn-Zn-O系濺鍍靶，可於不發生異常放電之情況下進行DC濺鍍。
<6>如上述<5>記載之濺鍍靶之製造方法，其中，上述混合粉末進而含有由選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素的單質或化合物所構成之粉末。
根據本發明，可提供一種能夠解決以往之上述各個問題而達成上述目的、且能夠供進行DC濺鍍之Mn-Zn-O系濺鍍靶及其製造方法。
S10‧‧‧混合步驟
S20‧‧‧燒結步驟
S30‧‧‧精加工步驟
圖1係用以說明本發明之一實施形態之濺鍍靶之製造方法 的流程圖。
(Mn-Zn-O系濺鍍靶)
本發明之Mn-Zn-O系濺鍍靶係成分組成中含有Mn、Zn、元素X及O之Mn-Zn-O系濺鍍靶。以下，將本發明之Mn-Zn-O系濺鍍靶簡稱為「靶」，詳細地說明本發明之靶。再者，元素X為選自由W及Mo所組成之群中之單獨1種或2種元素，以下簡述為「(元素)X為W或Mo」。
<靶>
本發明之一實施形態之靶於成分組成中含有Mn、Zn、元素X及O，進而，視需要包含其他成分組成。
<<元素X>>
如上所述，元素X為W或Mo。即，元素X可由單獨1種W構成，元素X可由單獨1種Mo構成。又，元素X亦可由W與Mo兩種元素構成。此處，所謂元素X由W與Mo兩種元素構成，意指於靶之成分組成中一併含有W與Mo。
<<算術平均粗糙度Ra及平均高度Ry>>
關於本實施形態之靶，重要的是其被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下。如下述實施例所示，本發明人等經過研究，結果明瞭，若靶之被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下，則DC濺鍍時不會發生異常放電。
再者，於本發明中，所謂「算術平均粗糙度Ra」係指基於 JIS B0601(1994)之算術平均粗糙度(Ra)(單位：μm)。又，於本發明中，所謂「最大高度(Ry)」係指基於JIS B0601(1994)之最大高度(Ry)(單位：μm)。
如此，本實施形態之濺鍍靶為可供進行DC濺鍍之Mn-Zn-O系濺鍍靶，可於不發生異常放電之情況下進行DC濺鍍。又，本實施形態之靶尤其適合用於形成光資訊記錄媒體之記錄層，但用途不受任何限定。
<<成分比>>
此處，作為本實施形態之靶之成分比，並無特別限制，可根據目的而適當選擇，可設為相對於Mn、Zn及元素X之合計100原子%，Mn：4~40原子%、Zn：15~60原子%、元素X：5~40原子%。
<<其他成分>>
本實施形態之靶亦可視需要進而含有其他金屬元素。藉由適當含有該等金屬元素，於將本實施形態之靶用於形成例如資訊記錄媒體之記錄層之情形時，可使記錄層之透射率、反射率及記錄感度發生變化，製成多層結構之記錄層。為了達成該目的，本實施形態之靶較佳為於成分組成中進而含有選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素。
-其他成分之成分比-
關於上述選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素的含有率，可設為相對於濺鍍靶之構成元素中除O(氧)以外之合計100原子%，為8~70原子%，可於該範圍中根據用途而適當選擇。
再者，本實施形態之靶之形狀並無任何限定，可製成圓盤狀、圓筒狀、四角形板狀、長方形板狀、正方形板狀等任意形狀，可根據靶之用途而適當選擇。又，關於靶之寬度及深度之大小(圓形之情形時為直徑)，亦可根據靶之用途，於毫米(mm)級~米(m)級程度之範圍內適當選擇。例如靶為圓形之情形時，一般而言直徑為50mm~300mm左右。厚度亦同，一般而言為1mm~20mm左右。
<濺鍍靶之製造方法>
其次，利用圖1，對上述本發明之一實施形態之靶之製造方法進行說明。本發明之一實施形態之靶之製造方法包括下述步驟：混合步驟(S10)、燒結步驟(S20)及精加工步驟(S30)，進而包括視需要適當選擇之其他步驟。
<<混合步驟(S10)>>
混合步驟(S10)係對包含錳氧化物粉末、鋅氧化物粉末、及成分中含有元素X之金屬粉末的混合粉末進行12小時以上之濕式混合之步驟。
作為濕式混合之方法，並無特別限制，可根據目的而適當選擇，例如，可列舉使用先前公知之球磨機裝置之濕式混合方法。以下對本步驟中所混合之混合粉末及混合條件進行說明。
混合粉末包含錳氧化物粉末、鋅氧化物粉末、及成分中含有元素X之金屬粉末，亦可視需要包含其他粉末。
-錳氧化物粉末-
作為錳氧化物粉末，可根據目的而適當選擇，除了可使用Mn3O4(氧化錳(II、III))及Mn2O3(氧化錳(III))，亦可使用MnO、MnO2、MnO3及 Mn2O7等。該等可單獨使用1種，亦可併用2種以上。
該等中，更佳為Mn3O4粉末。其原因在於燒結溫度與熔點之關係。
再者，作為錳氧化物粉末之平均粒徑，可根據目的而適當選擇。作為Mn3O4粉末之平均粒徑，可設為市售之3μm~7μm左右。
-鋅氧化物粉末-
作為鋅氧化物粉末，可根據目的而適當選擇，例如，可列舉：氧化鋅(ZnO)粉末、過氧化鋅(ZnO2)粉末等。該等可單獨使用1種，亦可併用2種以上。
該等中，更佳為ZnO粉末。其原因在於燒結溫度與熔點之關係。
再者，作為鋅氧化物粉末之平均粒徑，可根據目的而適當選擇。又，作為ZnO粉末之平均粒徑，可設為市售之1μm~3μm左右。
-成分中含有元素X之金屬粉末-
作為成分中含有元素X之金屬粉末，可根據目的而適當選擇，例如，可列舉：由W單質所構成之金屬鎢粉末、由Mo單質所構成之金屬鉬粉末等。該等可單獨使用1種，亦可併用2種以上。於X為W及Mo之情形時，併用金屬鎢粉末與金屬鉬粉末。
再者，作為成分中含有元素X之金屬粉末之平均粒徑，可根據目的而適當選擇。作為金屬鎢粉末之平均粒徑，可設為市售之2μm~5μm左右。又，作為金屬鉬粉末之平均粒徑，可設為市售之1μm~5μm左右。
-其他粉末-
作為其他粉末，可根據目的而適當選擇，例如，可列舉由選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、 Cr、Tb所組成之群中之單獨1種或2種以上之元素的單質或化合物所構成之粉末等。此處，可根據所製造之靶之所欲目的而使混合粉末中包含相應粉末。
-混合時間-
此處，於本實施形態中，關鍵在於對混合粉末進行12小時以上之濕式混合。藉由將混合時間設為12小時以上，可使混合粉末充分混合，因此可促進燒結中之氧化錳之固相反應，抑制燒結後之氧化錳結晶相之殘留。又，於上述範圍中，較佳為將混合時間設為16小時以上，更佳為設為20小時以上，最佳為設為24小時以上。混合24小時即可使混合之效果達到飽和，但混合24小時以上亦無妨，雖不欲設定上限，但考慮到工業上之生產性，可將上限設定為168小時。
<<燒結步驟(S20)>>
燒結步驟(S20)係於混合步驟(S10)之後進行，為將混合粉末於700℃以上之溫度下進行燒結之燒結步驟。
-燒結-
作為燒結法，並無特別限制，可根據目的而適當選擇，例如，可列舉：非活性氣體環境中之熱壓、熱均壓加壓法(HIP法；Hot Isostatic Pressing)等。
此處，於本實施形態中，關鍵在於將混合粉末於700℃以上之溫度下進行燒結。藉由將燒結溫度設為700℃以上，可抑制燒結後之氧化錳結晶相之殘留。
再者，燒結時間並無特別限定，可適當選擇，設為一般所進行之1小時~6小時左右之燒結時間即可。
<<精加工步驟(S30)>>
精加工步驟(S30)係於燒結步驟(S20)之後進行，為使靶之被濺鍍面變得平滑之步驟。
上述精加工步驟可使用平面研削機進行。具體而言，使用金剛石磨石或研磨粒磨石進行研削。其後，利用SCOTCHBRITE(註冊商標)等研磨用墊進行精加工，使靶之被濺鍍面變得平滑。
經由以上步驟，可製造靶之被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下的Mn-Zn-O系濺鍍靶。
<<其他步驟>>
作為其他步驟，並無特別限制，可根據目的而適當選擇，例如，可列舉混合粉末之成形步驟等。
-成形步驟-
再者，上述混合粉末之成形步驟於本發明中並非必須，有時會為了成形靶之形狀而進行。
實施例1
以下，藉由實施例而更詳細地說明本發明，但本發明並非限定於以下之實施例，於未脫離本發明之主旨之範圍內可添加各種變更。
如下，使用W作為元素X，製作實施例1-1~1-2作為本發明之靶，製作比較例1-1~1-2作為對照用之靶，評價異常放電之次數。
(實施例1-1)
準備以下之粉末作為原料粉末。
純度：99.9%以上，平均粒徑：5μm，Mn3O4粉末
純度：99.9%以上，平均粒徑：1.4μm，ZnO粉末
純度：99.9%以上，平均粒徑：2μm，W粉末
以使各金屬元素之比率成為Mn：Zn：W=20：50：30(原子%)之方式，秤量上述Mn3O4粉末、ZnO粉末及W粉末。將所秤量之各原料粉末、各原料粉末之合計重量之3倍的氧化鋯球(直徑5mm)、及醇放入塑膠容器內，利用球磨機裝置，進行24小時之濕式混合。將混合粉末乾燥後，通過網眼500μm之篩。繼而，於燒結溫度：900℃、燒結時間：2小時、壓力：200kgf/cm2之條件下，於非活性氣體環境中進行熱壓。繼而，利用平面研削機，以使算術平均粗糙度Ra成為0.5μm、最大高度Ry成為4μm之方式對藉由煅燒所獲得之靶之表面進行精加工。此處，上述算術平均粗糙度Ra及最大高度Ry之值係使用東京精密股份有限公司製造之Surfcom 480A而測定。最後，藉由In焊料接合至無氧銅製背板，而製作實施例1-1之靶。
(實施例1-2)
與實施例1-1相同地製作靶。其中，靶之被濺鍍面之精加工係藉由變更研磨粒尺寸，以使表面之算術平均粗糙度Ra成為1.5μm、最大高度Ry成為10μm之方式進行，從而製作實施例1-2之靶。其他條件與實施例1-1完全相同。
(比較例1-1)
與實施例1-1相同地製作靶。其中，靶之被濺鍍面之精加工係藉由變更研磨粒尺寸，以使表面之算術平均粗糙度Ra成為1.6μm、最大高度Ry成為12μm之方式進行，從而製作比較例1-1之靶。其他條件與實施例1 -1完全相同。
(比較例1-2)
與實施例1-1相同地製作靶。其中，靶之被濺鍍面之精加工係藉由變更研磨粒尺寸，以使表面之算術平均粗糙度Ra成為2.0μm、最大高度Ry成為20.0μm之方式進行，從而製作比較例1-2之靶。其他條件與實施例1-1完全相同。
<異常放電之發生次數之評價>
對以上之實施例1-1~1-2、及比較例1-1~1-2之靶，進行異常放電之發生次數之評價。具體而言，將實施例1-1~1-2、及比較例1-1~1-2之靶安裝於濺鍍裝置上，分別進行DC濺鍍。即，對濺鍍裝置內進行真空排氣至1×10-4Pa以下，導入氬氣與氧氣，將裝置內壓力設為0.3Pa。氧分壓(〔O2〕/〔Ar+O2〕)設為70%。藉由DC電源施加電力5W/cm2，進行30分鐘之濺鍍，利用飛弧計數器計測濺鍍中之異常放電之發生次數。再者，剛放電不久之異常放電除外。將所獲得之結果示於表1。
根據表1可知，於元素X為W之情形時，滿足靶之被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下之實施例1-1、1-2之靶的異常放電之發生次數為0次，可於不發生異常放 電之情況下進行濺鍍。相對於此，可知於靶之被濺鍍面之算術平均粗糙度Ra超過1.5μm、或最大高度Ry超過10μm之比較例1-1及1-2之情形時，異常放電至少發生30次。
實施例2
如下所示，使用Mo作為元素X，製作實施例2-1~2-2作為本發明之靶，製作比較例2-1~2-2作為對照用之靶，評價異常放電之有無。
(實施例2-1)
準備以下之粉末作為原料粉末。
純度：99.9%以上，平均粒徑：5μm，Mn3O4粉末
純度：99.9%以上，平均粒徑：1.4μm，ZnO粉末
純度：99.9%以上，平均粒徑：2μm，Mo粉末
以使各金屬元素之比率成為Mn：Zn：Mo=20：50：30(原子%)之方式，秤量上述Mn3O4粉末、ZnO粉末及W粉末。將所秤量之各原料粉末、各原料粉末之合計重量之3倍的氧化鋯球(直徑5mm)、及醇放入塑膠容器內，利用球磨機裝置，進行24小時之濕式混合。將混合粉末乾燥後，通過網眼500μm之篩。繼而，於燒結溫度：900℃、燒結時間：2小時、壓力：200kgf/cm2之條件下，於非活性氣體環境中進行熱壓。繼而，利用平面研削機，以使算術平均粗糙度Ra成為0.5μm、最大高度Ry成為4μm之方式對藉由煅燒所獲得之靶之表面進行精加工。此處，上述算術平均粗糙度Ra及最大高度Ry係使用東京精密股份有限公司製造之Surfcom 480A而測定。最後，藉由In焊料接合至無氧銅製背板，而製作實施例2-1之靶。
(實施例2-2)
與實施例2-1相同地製作靶。其中，靶之被濺鍍面之精加工係藉由變更研磨粒尺寸，以使表面之算術平均粗糙度Ra成為1.5μm、最大高度Ry成為10μm之方式進行，從而製作實施例2-2之靶。其他條件與實施例2-1完全相同。
(比較例2-1)
與實施例2-1相同地製作靶。其中，靶之被濺鍍面之精加工係藉由變更研磨粒尺寸，以使表面之算術平均粗糙度Ra成為1.6μm、最大高度Ry成為12μm之方式進行，從而製作比較例2-1之靶。其他條件與實施例2-1完全相同。
(比較例2-2)
與實施例2-1相同地製作靶。其中，靶之被濺鍍面之精加工係藉由變更研磨粒尺寸，以使表面之算術平均粗糙度Ra成為2.0μm、最大高度Ry成為20.0μm之方式進行，從而製作比較例2-2之靶。其他條件與實施例2-1完全相同。
<異常放電之發生次數之評價>
對以上之實施例2-1~2-2、及比較例2-1~2-2之靶，進行異常放電之發生次數之評價。具體而言，將實施例2-1~2-2、及比較例2-1~2-2之靶安裝於濺鍍裝置上，分別進行DC濺鍍。即，對濺鍍裝置內進行真空排氣至1×10-4Pa以下，導入氬氣與氧氣，將裝置內壓力設為0.3Pa。氧分壓(〔O2〕/〔Ar+O2〕)設為70%。藉由DC電源施加電力5W/cm2，進行30分鐘之濺鍍，利用飛弧計數器計測濺鍍中之異常放電之發生次數。再 者，剛放電後之異常放電除外。將所獲得之結果示於表2。
根據表2可知，於元素X為Mo之情形時，滿足靶之被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下之實施例2-1、2-2之靶的異常放電之發生次數為0次，可於不發生異常放電之情況下進行濺鍍。相對於此，可知於靶之被濺鍍面之算術平均粗糙度Ra超過1.5μm、或最大高度Ry超過10μm之比較例2-1、2-2之情形時，異常放電至少發生20次。
[產業上之可利用性]
根據本發明，可提供一種尤其適合用於形成光資訊記錄媒體之記錄層、且可供進行DC濺鍍的Mn-Zn-O系濺鍍靶及其製造方法。
S10‧‧‧混合步驟
S20‧‧‧燒結步驟
S30‧‧‧精加工步驟

Claims (6)

  1. 一種濺鍍靶，其係於成分組成中含有Mn、Zn、O及元素X(其中，X為選自由W及Mo所組成之群中之單獨1種或2種元素)之Mn-Zn-O系濺鍍靶，其特徵在於：上述靶之被濺鍍面之算術平均粗糙度Ra為1.5μm以下、或最大高度Ry為10μm以下。
  2. 如申請專利範圍第1項之濺鍍靶，其中，相對於Mn、Zn及上述元素X之合計100原子%，Mn：4~40原子%、Zn：15~60原子%、上述元素X：5~40原子%。
  3. 如申請專利範圍第1或2項之濺鍍靶，其中，上述成分組成中進而含有選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素。
  4. 如申請專利範圍第3項之濺鍍靶，其中，上述選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素的含有率相對於上述濺鍍靶之構成元素中除O以外之合計100原子%，為8~70原子%。
  5. 一種濺鍍靶之製造方法，其係製造申請專利範圍第1項之Mn-Zn-O濺鍍靶之方法，其包括下述步驟：混合步驟，其係對包含錳氧化物粉末、鋅氧化物粉末、及成分中含有上述元素X之金屬粉末的混合粉末進行12小時以上之濕式混合；燒結步驟，其係於該混合步驟後，將上述混合粉末於700℃以上之 溫度下進行燒結；及精加工步驟，其係於該燒結步驟後，使上述靶之被濺鍍面變得平滑。
  6. 如申請專利範圍第5項之濺鍍靶之製造方法，其中，上述混合粉末進而含有由選自由Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb所組成之群中之單獨1種或2種以上之元素的單質或化合物所構成之粉末。
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