CN113667944A - Mn-Zn-O系溅射靶及其制备方法 - Google Patents

Mn-Zn-O系溅射靶及其制备方法 Download PDF

Info

Publication number
CN113667944A
CN113667944A CN202110716455.3A CN202110716455A CN113667944A CN 113667944 A CN113667944 A CN 113667944A CN 202110716455 A CN202110716455 A CN 202110716455A CN 113667944 A CN113667944 A CN 113667944A
Authority
CN
China
Prior art keywords
sputtering
target
sputtering target
powder
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110716455.3A
Other languages
English (en)
Inventor
菅原淳一
加守雄一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of CN113667944A publication Critical patent/CN113667944A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/12—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F2003/247—Removing material: carving, cleaning, grinding, hobbing, honing, lapping, polishing, milling, shaving, skiving, turning the surface
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3239—Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3256—Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C04B2235/3263—Mn3O4
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3287—Germanium oxides, germanates or oxide forming salts thereof, e.g. copper germanate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3289—Noble metal oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3289—Noble metal oxides
    • C04B2235/3291—Silver oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963—Surface properties, e.g. surface roughness

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

本发明提供可供于DC溅射的Mn‑Zn‑O系溅射靶及其制备方法。本发明的Mn‑Zn‑O系溅射靶的特征在于，在成分组成中含有Mn、Zn、O和元素X，其中，X为选自W和Mo的单独1种元素或2种元素，上述靶的被溅射面的算术平均粗糙度Ra为1.5μm以下、或最大高度Ry为10μm以下。

Description

Mn-Zn-O系溅射靶及其制备方法
本申请是申请日为2017年7月11日，申请号为201780042540.8 (PCT/JP2017/025276)，发明名称为“Mn-Zn-O系溅射靶及其制备方法”的发明专利申请的分案申请。
技术领域
本发明涉及Mn-Zn-O系溅射靶及其制备方法，特别是涉及适合供于形成光信息记录介质的记录层的、在成分组成中含有元素X (X为W或Mo)的Mn-Zn-O系溅射靶及其制备方法。
背景技术
使Ar离子等与包含合金或烧结体的溅射靶碰撞的溅射法在玻璃涂层、半导体元件制备、平板显示器制备、光信息记录介质(记录型光盘)的记录层形成等广泛的技术领域中得到实施。
这些之中，例如在光信息记录介质的技术领域，随着处理的数据的增大，越发需要大容量化。在这里，光信息记录介质大致分为只读和记录型，其中记录型可分为一次性写入型和可重写型这2种类型。作为一次性写入型光盘的记录层材料，以往广泛研究有机色素材料，但随着近年来的大容量化，无机材料也得到广泛研究。
目前，作为一次性写入型光盘的无机系记录层材料，实际应用钯氧化物系材料。但是，由于Pd为稀有金属，所以材料成本高。因此，作为以廉价的材料成本得到充分良好的记录特性的材料，开发了锰氧化物系材料。
作为包含这样的锰氧化物系材料的记录层，在专利文献1中提出了含有Mn的氧化物和金属Ma (其中，金属Ma选自Mg、Mo、Si和Te)的氧化物，并进一步含有金属M (选自Sn、Zn、Bi等)的Mn-Zn-Ma-O系记录层。而且，作为将上述Mn-Zn-Ma-O系记录层成膜的具体方法，专利文献1公开了共溅射(多元溅射)法。通过使用专利文献1所述的技术，可不使用作为稀有金属的Pd，而实现材料：Mn-Zn-Ma-O系记录层。
现有技术文献
专利文献
专利文献1：国际公开第2013/183277号。
发明内容
发明所要解决的课题
在这里，如包含上述材料的Mn-Zn-Ma-O系记录层，作为用溅射法形成含有多种元素的层的方法之一，如专利文献1所公开，可列举出溅射包含各自元素的多个靶的多元溅射法。作为其它的方法，可列举出将含有多种元素的1张复合靶作为单一靶来溅射的方法。在这里，多元溅射法不仅有装置大型化而导致成本上升的因素，而且有易产生组成偏差的缺点。因此，以量产化的观点，优选使用1张复合靶，且使用DC (直流)溅射法。
作为信息记录介质制作用溅射靶，上述专利文献1提出了含有Mn的氧化物，且上述Mn的氧化物的一部分或全部以Mn的价数低于+4的氧化物状态存在的靶。在专利文献1中，进一步提出了在该靶中以上述氧化物状态存在的Mn的氧化物优选为不会热分解的Mn3O4。另外，也提出了该靶可进一步含有Mn以外的金属或该金属的氧化物，上述金属为选自Sn、Zn、Bi、Ge、Co、W、Cu和Al的1种以上。此外，还提出了可添加Zr、Al、Ta、Mo、Si、Mg、Hf、V、Ti、Sb和Te中的任意的金属元素。
但是，专利文献1并未提及具体的Mn-Zn-O系复合溅射靶。到目前为止尚未确立在成分组成中含有Mn、Zn、元素X (其中，X为W或Mo)和O的Mn-Zn-O系的复合溅射靶。
因此，本发明的目的在于，提供含有元素X (其中，X为W或Mo)的Mn-Zn-O系溅射靶及其制备方法。
用于解决课题的手段
本发明人为达成上述诸多目的而进行了深入研究，以氧化锰粉末、氧化锌粉末、氧化钨粉末作为原料，尝试了制作Mn-Zn-W-O系溅射靶。另外，在上述Mn-Zn-W-O系溅射靶中，代替氧化钨粉末，以氧化钼粉末作为原料，还尝试了制作Mn-Zn-Mo-O系溅射靶。在将这些溅射靶供于DC溅射时，明确了会发生异常放电(也称为“电弧放电(arcing)”)。因此，将原料全部更换为上述元素的金属粉末，分别尝试了制作Mn-Zn-W-O系溅射靶和Mn-Zn-Mo-O系溅射靶。但是，由于金属锌的熔点比氧化锌低，所以可知溅射靶的制作本身是困难的。
因此，本发明人考虑将氧化物粉末和金属粉末组合作为原料粉末来制作Mn-Zn-O系溅射靶，本发明人发现，通过使得到的靶的被溅射面的算术平均粗糙度Ra为1.5μm以下、或使最大高度Ry为10μm以下，即使供于DC溅射，也不产生异常放电，从而完成了本发明。
本发明是基于本发明人的上述见解而成的，作为用于解决上述诸多课题的手段，如下所述。即，
<1> 溅射靶，其是在成分组成中含有Mn、Zn、O和元素X的Mn-Zn-O系溅射靶，其中，X为选自W和Mo的单独1种元素或2种元素，其特征在于，
上述靶的被溅射面的算术平均粗糙度为1.5μm以下、或最大高度Ry为10μm以下。
该<1>所述的Mn-Zn-O系溅射靶为可供于DC溅射的Mn-Zn-O系溅射靶。而且，根据该<1>所述的Mn-Zn-O系溅射靶，可不产生异常放电而进行DC溅射。
<2> 上述<1>所述的溅射靶，其中，相对于Mn、Zn和上述元素X的总计100原子%，Mn为4~40原子%，Zn为15~60原子%，上述元素X为5~40原子%。
<3> 上述<1>或<2>所述的溅射靶，其中，在上述成分组成中进一步含有选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素。
<4> 上述<3>所记载的溅射靶，其中，在上述溅射靶的构成元素中，相对于除去O以外的总计100原子%，上述选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素的含量为8~70原子%。
<5> 制备方法，其是制备上述<1>所述的Mn-Zn-O系溅射靶的方法，其特征在于，包括：
混合工序，其是将锰氧化物粉末、锌氧化物粉末、和以上述元素X作为成分含有的金属粉末湿式混合12小时以上，
烧结工序，其是在该混合工序后在700℃以上的温度下烧结上述混合粉末，和
精加工工序，其是在该烧结工序后使上述靶的被溅射面变得平滑。
根据该<5>所述的制备方法，可制备能够供于DC溅射的Mn-Zn-O系溅射靶。而且，利用通过该<5>所述的方法制备的Mn-Zn-O系溅射靶，可不产生异常放电而进行DC溅射。
<6> 上述<5>所述的制备方法，其中，上述混合粉末进一步含有包含选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素的单体或化合物的粉末。
发明效果
根据本发明，可解决以往的上述诸多问题，而达成上述目的，可提供能够供于DC溅射的Mn-Zn-O系溅射靶及其制备方法。
附图简述
[图1]是用于说明本发明的一个实施方式的溅射靶的制备方法的流程图。
具体实施方式
(Mn-Zn-O系溅射靶)
本发明的Mn-Zn-O系溅射靶为在成分组成中含有Mn、Zn、元素X和O的Mn-Zn-O系溅射靶。以下，将本发明的Mn-Zn-O系溅射靶简称为“靶”，详细地说明本发明的靶。需说明的是，元素X为选自W和Mo的单独1种元素或2种元素，以下，简记为“(元素) X为W或Mo”。
<靶>
本发明的一个实施方式的靶在成分组成中含有Mn、Zn、元素X和O，此外根据需要含有其它的成分组成。
<<元素X>>
如上所述，元素X为W或Mo。即，元素X可包含单独1种W，元素X可包含单独1种Mo。另外，元素X也可包含W和Mo这2种元素。在这里，元素X包含W和Mo这2种元素是指在靶的成分组成中同时含有W和Mo。
<<算术平均粗糙度Ra和平均高度Ry>>
本实施方式的靶，重要的是其被溅射面的算术平均粗糙度Ra为1.5μm以下、或最大高度Ry为10μm以下。如下述实施例所示，本发明人的研究结果明确了，如果靶的被溅射面的算术平均粗糙度Ra为1.5μm以下、或最大高度Ry为10μm以下，则在DC溅射时不会产生异常放电。
需说明的是，在本发明中“算术平均粗糙度Ra”是指基于JIS B0601 (1994)的算术平均粗糙度(Ra) (单位：μm)。另外，在本发明中“最大高度(Ry)”是指基于JIS B0601(1994)的最大高度(Ry) (单位：μm)。
如上所述，本实施方式的溅射靶为可供于DC溅射的Mn-Zn-O系溅射靶，可不产生异常放电而进行DC溅射。另外，本实施方式的靶特别适合供于形成光信息记录介质的记录层，但用途无任何限定。
<<成分比>>
在这里，作为本实施方式的靶的成分比，无特殊限制，可根据目的适宜选择，相对于Mn、Zn和元素X的总计100原子%，可设为Mn：4~40原子%、Zn：15~60原子%、元素X：5~40原子%。
<<其它成分>>
在本实施方式的靶中，可根据需要进一步含有其它的金属元素。通过适宜含有这些金属元素，在将本实施方式的靶供于形成例如信息记录介质的记录层的情况下，可改变记录层的透过率、反射率和记录灵敏度，制成多层结构的记录层。为了该目的，本实施方式的靶优选在成分组成中进一步含有选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素。
-其它成分的成分比-
在溅射靶的构成元素中，相对于除去O (氧)以外的总计100原子%，上述选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素的含量可设为8~70原子%，可在该范围内根据用途适宜选择。
需说明的是，本实施方式的靶的形状无任何限定，可制成圆盘状、圆筒状、四边形板状、长方形板状、正方形板状等任意的形状，可根据靶的用途适宜选择。另外，对于靶的宽度和深度的大小(在圆形的情况下为直径)，也可在毫米(mm)级~米(m)级程度的范围内，根据靶的用途适宜选择。例如在靶为圆形的情况下，通常直径为50mm~300mm左右。对于厚度也是相同的，通常为1mm~20mm左右。
<溅射靶的制备方法>
接着，使用图1，说明上述本发明的一个实施方式的靶的制备方法。本发明的一个实施方式的靶的制备方法包括混合工序(S10)、烧结工序(S20)和精加工工序(S30)，此外包括根据需要适宜选择的其它工序。
<<混合工序(S10)>>
混合工序(S10)是将以下混合粉末湿式混合12小时以上的工序，所述混合粉末含有锰氧化物粉末、锌氧化物粉末、和以元素X作为成分含有的金属粉末。
作为湿式混合的方法，无特殊限制，可根据目的适宜选择，例如可列举出使用以往公知的球磨装置的湿式混合方法等。以下说明在本工序中混合的混合粉末和混合条件。
混合粉末包含锰氧化物粉末、锌氧化物粉末、和以元素X作为成分含有的金属粉末，可根据需要含有其它的粉末。
-锰氧化物粉末-
作为锰氧化物粉末，可根据目的适宜选择，除了Mn3O4 (氧化锰(二价、三价))和Mn2O3 (氧化锰(三价))以外，还可使用MnO、MnO2、MnO3和Mn2O7等Mn3O4、Mn2O3等。这些可单独使用1种或组合使用2种以上。
这些之中，更优选Mn3O4粉末。这是由于烧结温度与熔点的关系的缘故。
需说明的是，作为锰氧化物粉末的平均粒径，可根据目的适宜选择。作为Mn3O4粉末的平均粒径，可设为市售的3μm~7μm左右。
-锌氧化物粉末-
作为锌氧化物粉末，可根据目的适宜选择，例如可列举出氧化锌(ZnO)粉末、过氧化锌(ZnO2)粉末等。这些可单独使用1种或组合使用2种以上。
这些之中，更优选ZnO粉末。这是由于烧结温度与熔点的关系的缘故。
需说明的是，作为锌氧化物粉末的平均粒径，可根据目的适宜选择。另外，作为ZnO粉末的平均粒径，可设为市售的1μm~3μm左右。
-以元素X作为成分含有的金属粉末-
作为以元素X作为成分含有的金属粉末，可根据目的适宜选择，例如可列举出包含W的单体的金属钨粉末、包含Mo的单体的金属钼粉末等。这些可单独使用1种或组合使用2种以上。在X为W和Mo的情况下，同时使用金属钨粉末和金属钼粉末。
需说明的是，作为以元素X作为成分含有的金属粉末的平均粒径，可根据目的适宜选择。作为金属钨粉末的平均粒径，可设为市售的2μm~5μm左右。另外，作为金属钼粉末的平均粒径，可设为市售的1μm~5μm左右。
-其它粉末-
作为其它粉末，可根据目的适宜选择，例如可列举出包含选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素的单体或化合物的粉末等。在这里，可根据制备的靶的所期望的目的，在混合粉末中含有所述的粉末。
-混合时间-
在这里，在本实施方式中重要的是将混合粉末湿式混合12小时以上。由于通过将混合时间设为12小时以上，可充分地将混合粉末混合，所以可促进烧结中的氧化锰的固相反应，抑制烧结后的氧化锰结晶相的残留。另外，在上述范围中，优选将混合时间设为16小时以上，更优选设为20小时以上，最优选设为24小时以上。若混合24小时，则混合的效果饱和，但也可混合24小时以上，虽然未设计上限，但考虑工业上的生产能力，可将上限设定为168小时。
<<烧结工序(S20)>>
烧结工序(S20)是在混合工序(S10)后进行的工序，是在700℃以上的温度下烧结混合粉末的烧结工序。
-烧结-
作为烧结方法，无特殊限制，可根据目的适宜选择，例如可列举出惰性气体气氛中的热压、热等静压加压法(HIP法：Hot Isostatic Pressing)等。
在这里，在本实施方式中重要的是在700℃以上的温度下烧结混合粉末。通过将烧结温度设为700℃以上，可抑制烧结后的氧化锰结晶相的残留。
需说明的是，烧结时间无特殊限定，可适宜选择，只要设为通常实施的1小时~6小时左右的烧结时间即可。
<<精加工工序(S30)>>
精加工工序(S30)是在烧结工序(S20)后进行的工序，是使靶的被溅射面变得平滑的工序。
上述精加工工序可使用平面磨削机来进行。具体而言，使用金刚石磨石或砂粒磨石，进行磨削。然后，用SCOTCHBRITE (注册商标)等研磨用垫进行精加工，使靶的被溅射面变得平滑。
经过以上的工序，可制备靶的被溅射面的算术平均粗糙度Ra为1.5μm以下、或最大高度Ry为10μm以下的Mn-Zn-O系溅射靶。
<<其它工序>>
作为其它工序，无特殊限制，可根据目的适宜选择，例如可列举出混合粉末的成型工序等。
-成型工序-
需说明的是，上述混合粉末的成型工序在本发明中不是必不可少的，有时为了成型靶的形状而实施。
实施例1
以下，使用实施例来更详细地说明本发明，但本发明绝不限定于以下的实施例，可在不偏离本发明的宗旨的范围内加入各种的变更。
如下所述，使用W作为元素X，制作实施例1-1~1-2作为本发明的靶，制作比较例1-1~1-2作为对照用靶，评价了异常放电的次数。
(实施例1-1)
作为原料粉末，准备了以下的粉末。
纯度：99.9%以上，平均粒径：5μm，Mn3O4粉末
纯度：99.9%以上，平均粒径：1.4μm，ZnO粉末
纯度：99.9%以上，平均粒径：2μm，W粉末
称量上述Mn3O4粉末、ZnO粉末和W粉末，使得各种金属元素的比例为Mn:Zn:W=20:50:30 (原子%)。将秤量的各种原料粉末、各种原料粉末的总计重量3倍的氧化锆球(直径为5mm)和乙醇放入聚乙烯容器中，用球磨装置，进行了24小时的湿式混合。在将混合粉末干燥后，过筛孔为500μm的筛子。接着，在烧结温度：900℃、烧结时间：2小时、压力：200kgf/cm2、惰性气体气氛中进行了热压。接着，利用平面磨削机将通过煅烧得到的靶的表面进行了精加工，使得算术平均粗糙度Ra为0.5μm、最大高度Ry为4μm。在这里，上述算术平均粗糙度Ra和最大高度Ry的值是使用东京精密株式会社制Surfcom 480A测定而得的值。最后，在无氧铜制的背板上用In焊料进行焊接(bonding)，制作了实施例1-1所涉及的靶。
(实施例1-2)
与实施例1-1相同地制作了靶。其中，靶的被溅射面的精加工通过变更砂粒尺寸，使得表面的算术平均粗糙度Ra为1.5μm、最大高度Ry为10μm来进行，制作了实施例1-2所涉及的靶。其它的条件与实施例1-1完全相同。
(比较例1-1)
与实施例1-1相同地制作了靶。其中，靶的被溅射面的精加工通过变更砂粒尺寸，使得表面的算术平均粗糙度Ra为1.6μm、最大高度Ry为12μm来进行，制作了比较例1-1所涉及的靶。其它的条件与实施例1-1完全相同。
(比较例1-2)
与实施例1-1相同地制作了靶。其中，靶的被溅射面的精加工通过变更砂粒尺寸，使得表面的算术平均粗糙度Ra为1.6μm、最大高度Ry为12μm来进行，制作了比较例1-2所涉及的靶。其它的条件与实施例1-1完全相同。
<异常放电的发生次数的评价>
对于以上的实施例1-1~1-2和比较例1-1~1-2所涉及的靶，进行了异常放电的发生次数的评价。具体而言，将实施例1-1~1-2和比较例1-1~1-2所涉及的靶安装在溅射装置上，分别进行了DC溅射。即，将溅射装置内真空排气至1×10-4Pa以下，导入Ar气和O2气，将装置内压力设为0.3Pa。氧的分压([O2]/[Ar+O2])设为70%。用DC电源施加5W/cm2的电流，进行30分钟的溅射，利用电弧计数器测量了溅射中的异常放电的发生次数。需说明的是，刚放电后的异常放电排除在外。将得到的结果示出于表1中。
[表1]
靶 算术平均粗糙度Ra (μm) 最大高度Ry (μm) 异常放电发生次数
实施例1-1 0.5 4.0 0
实施例1-2 1.5 10.0 0
比较例1-1 1.6 12.0 30
比较例1-2 2.0 20.0 80
由表1可知，在元素X为W的情况下，满足靶的被溅射面的算术平均粗糙度Ra为1.5μm以下或最大高度Ry为10μm以下的实施例1-1、1-2所涉及的靶，发生异常放电的次数为0次，可不发生异常放电而进行溅射。与之相对的是，在靶的被溅射面的算术平均粗糙度Ra超过1.5μm或最大高度Ry超过10μm的比较例1-1和1-2的情况下，可知异常放电至少发生30次。
实施例2
如下所述，使用Mo作为元素X，制作实施例2-1~2-2作为本发明的靶，制作比较例2-1~2-2作为对照用的靶，评价了有无异常放电。
(实施例2-1)
作为原料粉末，准备了以下的粉末。
纯度：99.9%以上，平均粒径：5μm，Mn3O4粉末
纯度：99.9%以上，平均粒径：1.4μm，ZnO粉末
纯度：99.9%以上，平均粒径：2μm，Mo粉末
称量上述Mn3O4粉末、ZnO粉末和W粉末，使得各种金属元素的比例为Mn:Zn:Mo=20:50:30 (原子%)。将称量的各种原料粉末、各种原料粉末的总计重量3倍的氧化锆球(直径为5mm)和乙醇放入聚乙烯容器中，用球磨装置，进行了24小时的湿式混合。在将混合粉末干燥后，过筛孔为500μm的筛子。接着，在烧结温度：900℃、烧结时间：2小时、压力：200kgf/cm2、惰性气体气氛中进行了热压。接着，利用平面磨削机将通过煅烧得到的靶的表面进行了精加工，使得算术平均粗糙度Ra为0.5μm、最大高度Ry为4μm。在这里，上述算术平均粗糙度Ra和最大高度Ry使用东京精密株式会社制Surfcom 480A进行测定。最后，在无氧铜制的背板上用In焊料进行焊接(bonding)，制作了实施例2-1所涉及的靶。
(实施例2-2)
与实施例2-1相同地制作了靶。其中，靶的被溅射面的精加工通过变更砂粒尺寸，使得表面的算术平均粗糙度Ra为1.5μm、最大高度Ry为10μm来进行，制作了实施例2-2所涉及的靶。其它的条件与实施例2-1完全相同。
(比较例2-1)
与实施例2-1相同地制作了靶。其中，靶的被溅射面的精加工通过变更砂粒尺寸，使得表面的算术平均粗糙度Ra为1.6μm、最大高度Ry为12μm来进行，制作了比较例2-1所涉及的靶。其它的条件与实施例2-1完全相同。
(比较例2-2)
与实施例2-1相同地制作了靶。其中，靶的被溅射面的精加工通过变更砂粒尺寸，使得表面的算术平均粗糙度Ra为1.6μm、最大高度Ry为12μm来进行，制作了比较例2-2所涉及的靶。其它的条件与实施例2-1完全相同。
<异常放电的发生次数的评价>
对于以上的实施例2-1~2-2和比较例2-1~2-2所涉及的靶，进行了异常放电的发生次数的评价。具体而言，将实施例2-1~2-2和比较例2-1~2-2所涉及的靶安装在溅射装置上，分别进行了DC溅射。即，将溅射装置内真空排气至1×10-4Pa以下，导入Ar气和O2气，将装置内压力设为0.3Pa。氧的分压([O2]/[Ar+O2])设为70%。用DC电源施加5W/cm2的电流，进行30分钟的溅射，利用电弧计数器测量了溅射中的异常放电的发生次数。需说明的是，刚放电后的异常放电排除在外。将得到的结果示出于表2中。
[表2]
靶 算术平均粗糙度Ra (μm) 最大高度Ry (μm) 异常放电发生次数
实施例2-1 0.5 4.0 0
实施例2-2 1.5 10.0 0
比较例2-1 1.6 12.0 20
比较例2-2 2.0 20.0 70
由表2可知，在元素X为W的情况下，满足靶的被溅射面的算术平均粗糙度Ra为1.5μm以下或最大高度Ry为10μm以下的实施例2-1、2-2所涉及的靶，发生异常放电的次数为0次，可不发生异常放电而进行溅射。与之相对的是，在靶的被溅射面的算术平均粗糙度Ra超过1.5μm或最大高度Ry超过10μm的比较例2-1、2-2的情况下，可知异常放电至少发生20次。
产业上的可利用性
根据本发明，可提供特别适合供于形成光信息记录介质的记录层的、可供于DC溅射的Mn-Zn-O系溅射靶及其制备方法。
符号说明
S10···混合工序；
S20···烧结工序；
S30···精加工工序。

Claims (6)

1.溅射靶，其是在成分组成中含有Mn、Zn、O和元素X的Mn-Zn-O系溅射靶，其中，X为选自W和Mo的单独1种元素或2种元素，其特征在于，
上述靶的被溅射面的算术平均粗糙度Ra为1.5μm以下、或最大高度Ry为10μm以下。
2.权利要求1所述的溅射靶，其中，相对于Mn、Zn和上述元素X的总计100原子%，Mn为4~40原子%，Zn为15~60原子%，上述元素X为5~40原子%。
3.权利要求1或2所述的溅射靶，其中，在上述成分组成中进一步含有选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素。
4.权利要求3所述的溅射靶，其中，在上述溅射靶的构成元素中，相对于除去O以外的总计100原子%，上述选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素的含量为8~70原子%。
5.溅射靶的制备方法，其是制备权利要求1所述的Mn-Zn-O系溅射靶的方法，其特征在于，包括：
混合工序，其是将以下混合粉末湿式混合12小时以上，所述混合粉末包含锰氧化物粉末、锌氧化物粉末、和以上述元素X作为成分含有的金属粉末，
烧结工序，其是在该混合工序后在700℃以上的温度下烧结上述混合粉末，和
精加工工序，其是在该烧结工序后使上述靶的被溅射面变得平滑。
6.权利要求5所述的溅射靶的制备方法，其中，上述混合粉末进一步含有包含选自Cu、Mg、Ag、Ru、Ni、Zr、Sn、Bi、Ge、Co、Al、In、Pd、Ga、Te、V、Si、Ta、Cr、Tb的单独1种元素或2种以上元素的单体或化合物的粉末。
CN202110716455.3A 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法 Pending CN113667944A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-147104 2016-07-27
JP2016147104A JP6860990B2 (ja) 2016-07-27 2016-07-27 Ｍｎ−Ｚｎ−Ｏ系スパッタリングターゲット及びその製造方法
CN201780042540.8A CN109415801A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780042540.8A Division CN109415801A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法

Publications (1)

Publication Number Publication Date
CN113667944A true CN113667944A (zh) 2021-11-19

Family

ID=61016116

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202110716455.3A Pending CN113667944A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法
CN201780042540.8A Pending CN109415801A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法
CN202311287303.1A Pending CN117587366A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201780042540.8A Pending CN109415801A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法
CN202311287303.1A Pending CN117587366A (zh) 2016-07-27 2017-07-11 Mn-Zn-O系溅射靶及其制备方法

Country Status (5)

Country Link
US (1) US11225709B2 (zh)
JP (1) JP6860990B2 (zh)
CN (3) CN113667944A (zh)
TW (1) TWI739865B (zh)
WO (1) WO2018021016A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6560497B2 (ja) * 2015-01-27 2019-08-14 デクセリアルズ株式会社 Ｍｎ−Ｚｎ−Ｗ−Ｏ系スパッタリングターゲット及びその製造方法
JP7096113B2 (ja) * 2018-09-19 2022-07-05 デクセリアルズ株式会社 Ｍｎ－Ｔａ－Ｗ－Ｃｕ－Ｏ系スパッタリングターゲット及びその製造方法
JP2021178748A (ja) * 2020-05-12 2021-11-18 株式会社コベルコ科研 焼結体の製造方法及びスパッタリングターゲットの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001316808A (ja) * 2000-05-09 2001-11-16 Toshiba Corp スパッタリングターゲット
JP2005314131A (ja) * 2004-04-27 2005-11-10 Sumitomo Metal Mining Co Ltd 酸化物焼結体、スパッタリングターゲット、透明導電性薄膜およびその製造方法
WO2013183277A1 (ja) * 2012-06-04 2013-12-12 ソニー株式会社 記録層、情報記録媒体およびターゲット
WO2015068535A1 (ja) * 2013-11-06 2015-05-14 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
CN105777107A (zh) * 2016-03-17 2016-07-20 江苏新浦电子科技有限公司 一种利用磁控溅射方法制备导电玻璃用陶瓷靶材

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236632A (en) * 1989-08-10 1993-08-17 Tosoh Corporation Zinc oxide sintered body, and preparation process and use thereof
JP5234483B2 (ja) * 2007-06-12 2013-07-10 三菱マテリアル株式会社 密着性に優れた配線下地膜およびこの配線下地膜を形成するためのスパッタリングターゲット
WO2009096165A1 (ja) * 2008-01-31 2009-08-06 Panasonic Corporation 光学的情報記録媒体とその製造方法、及びターゲット
JP5689250B2 (ja) * 2010-05-27 2015-03-25 出光興産株式会社 酸化物焼結体、それからなるターゲット及び酸化物半導体薄膜
JP5662874B2 (ja) * 2011-05-31 2015-02-04 株式会社神戸製鋼所 光情報記録媒体用記録膜および光情報記録媒体、並びに上記記録膜の形成に用いられるスパッタリングターゲット

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001316808A (ja) * 2000-05-09 2001-11-16 Toshiba Corp スパッタリングターゲット
JP2005314131A (ja) * 2004-04-27 2005-11-10 Sumitomo Metal Mining Co Ltd 酸化物焼結体、スパッタリングターゲット、透明導電性薄膜およびその製造方法
WO2013183277A1 (ja) * 2012-06-04 2013-12-12 ソニー株式会社 記録層、情報記録媒体およびターゲット
WO2015068535A1 (ja) * 2013-11-06 2015-05-14 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
CN105777107A (zh) * 2016-03-17 2016-07-20 江苏新浦电子科技有限公司 一种利用磁控溅射方法制备导电玻璃用陶瓷靶材

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ZHANG HUAFU ET AL.: "《Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films》", 《JOURNAL OF SEMICONDUCTORS》 *
张化福 等: "《薄膜厚度对Mn-W共掺杂ZnO透明导电薄膜性能的影响》", 《人工晶体学报》 *

Also Published As

Publication number Publication date
US11225709B2 (en) 2022-01-18
JP2018016837A (ja) 2018-02-01
JP6860990B2 (ja) 2021-04-21
TWI739865B (zh) 2021-09-21
CN117587366A (zh) 2024-02-23
CN109415801A (zh) 2019-03-01
WO2018021016A1 (ja) 2018-02-01
TW201816158A (zh) 2018-05-01
US20190242009A1 (en) 2019-08-08

Similar Documents

Publication Publication Date Title
US9034155B2 (en) Inorganic-particle-dispersed sputtering target
JP6042520B1 (ja) Ｍｎ−Ｚｎ−Ｏ系スパッタリングターゲット及びその製造方法
JP6560497B2 (ja) Ｍｎ−Ｚｎ−Ｗ−Ｏ系スパッタリングターゲット及びその製造方法
EP1829985B1 (en) Sb-Te ALLOY SINTERING PRODUCT TARGET
CN113667944A (zh) Mn-Zn-O系溅射靶及其制备方法
TWI788351B (zh) Mn-W-Cu-O系濺鍍靶及其製造方法
JP6713489B2 (ja) 磁気記録媒体用スパッタリングターゲット及び磁性薄膜
TWI807097B (zh) Mn-Nb-W-Cu-O系濺鍍靶材及其製造方法
WO2020059560A1 (ja) Ｍｎ－Ｔａ－Ｗ－Ｃｕ－Ｏ系スパッタリングターゲット及びその製造方法
JP6377231B1 (ja) Ｍｎ−Ｚｎ−Ｗ−Ｏ系スパッタリングターゲット及びその製造方法
JP6027699B1 (ja) Ｍｎ−Ｚｎ−Ｗ−Ｏ系スパッタリングターゲット及びその製造方法
JP6450229B2 (ja) Ｍｎ−Ｚｎ−Ｍｏ−Ｏ系スパッタリングターゲット及びその製造方法
WO2016013334A1 (ja) 磁性体薄膜形成用スパッタリングターゲット
JP2022162663A (ja) スパッタリングターゲット、および、スパッタリングターゲットの製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination