TWI735747B - 度量方法及模組，分段疊對目標，及電腦程式產品 - Google Patents

度量方法及模組，分段疊對目標，及電腦程式產品 Download PDF

Info

Publication number
TWI735747B
TWI735747B TW107106629A TW107106629A TWI735747B TW I735747 B TWI735747 B TW I735747B TW 107106629 A TW107106629 A TW 107106629A TW 107106629 A TW107106629 A TW 107106629A TW I735747 B TWI735747 B TW I735747B
Authority
TW
Taiwan
Prior art keywords
measurement
uncertainty
ler
model
computer
Prior art date
Application number
TW107106629A
Other languages
English (en)
Chinese (zh)
Other versions
TW201840954A (zh
Inventor
伊夫吉尼 古理維克
麥克 艾黛兒
洛爾 葛隆海德
亞爾 飛勒
維拉得摩 朗維司基
丹那 克林
夏倫 雅哈崙
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201840954A publication Critical patent/TW201840954A/zh
Application granted granted Critical
Publication of TWI735747B publication Critical patent/TWI735747B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW107106629A 2017-02-28 2018-02-27 度量方法及模組，分段疊對目標，及電腦程式產品 TWI735747B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201762464382P 2017-02-28 2017-02-28
US62/464,382 2017-02-28
US201762591104P 2017-11-27 2017-11-27
US62/591,104 2017-11-27
WOPCT/US18/19793 2018-02-27
PCT/US2018/019793 WO2018160502A1 (en) 2017-02-28 2018-02-27 Determining the impacts of stochastic behavior on overlay metrology data

Publications (2)

Publication Number Publication Date
TW201840954A TW201840954A (zh) 2018-11-16
TWI735747B true TWI735747B (zh) 2021-08-11

Family

ID=63371265

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107106629A TWI735747B (zh) 2017-02-28 2018-02-27 度量方法及模組，分段疊對目標，及電腦程式產品

Country Status (7)

Country Link
US (1) US10901325B2 (enExample)
JP (1) JP6960462B2 (enExample)
KR (1) KR102351345B1 (enExample)
CN (1) CN110383442B (enExample)
SG (1) SG11201907074RA (enExample)
TW (1) TWI735747B (enExample)
WO (1) WO2018160502A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6960462B2 (ja) * 2017-02-28 2021-11-05 ケーエルエー コーポレイション オーバレイ計量データの確率論的挙動の影響の判別
US11521825B2 (en) 2017-04-13 2022-12-06 Fractilia, Llc System and method for predicting stochastic-aware process window and yield and their use for process monitoring and control
US11508546B2 (en) 2017-04-13 2022-11-22 Fractilia, Llc System and method for low-noise edge detection and its use for process monitoring and control
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US12142454B2 (en) 2017-04-13 2024-11-12 Fractilla, LLC Detection of probabilistic process windows
US10664955B2 (en) 2017-04-13 2020-05-26 Fractilia, Llc Edge detection system and its use for machine learning
US11361937B2 (en) 2017-04-13 2022-06-14 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US10648801B2 (en) 2017-04-13 2020-05-12 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11355306B2 (en) 2017-04-13 2022-06-07 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US10656532B2 (en) 2017-04-13 2020-05-19 Fractilia, Llc Edge detection system and its use for optical proximity correction
US10488188B2 (en) 2017-04-13 2019-11-26 Fractilia, Llc System and method for removing noise from roughness measurements
US10445889B2 (en) * 2017-06-08 2019-10-15 Inspectrology LLC Method for measuring overlay offset in an integrated circuit and related technology
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
WO2020173654A1 (en) * 2019-02-25 2020-09-03 Asml Netherlands B.V. Method for determining stochastic variation of printed patterns
US10990019B2 (en) * 2019-04-09 2021-04-27 Kla Corporation Stochastic reticle defect dispositioning
US11353799B1 (en) * 2019-07-23 2022-06-07 Kla Corporation System and method for error reduction for metrology measurements
US11568101B2 (en) * 2019-08-13 2023-01-31 International Business Machines Corporation Predictive multi-stage modelling for complex process control
US11725934B2 (en) * 2019-11-28 2023-08-15 Kla Corporation Systems and methods for metrology optimization based on metrology landscapes
KR102590974B1 (ko) * 2021-09-10 2023-10-17 프랙틸리아 엘엘씨 확률적 프로세스 윈도우들의 검출
US12444628B2 (en) 2022-06-24 2025-10-14 Kla Corporation Image modeling-assisted contour extraction
US20250104216A1 (en) * 2023-09-26 2025-03-27 Kla Corporation Method to calibrate, predict, and control stochastic defects in euv lithography
CN117311103B (zh) * 2023-10-31 2024-08-06 魅杰光电科技(上海)有限公司 套刻误差测量方法、装置、系统及存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921916B2 (en) * 2000-08-30 2005-07-26 Kla -Tenocor Technologies Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
TW201411277A (zh) * 2012-08-06 2014-03-16 Asml Netherlands Bv 用於藉由嵌段共聚物之自我組裝在一基板上提供微影特徵之方法
TW201543172A (zh) * 2014-02-11 2015-11-16 Asml Netherlands Bv 用於計算任意圖案中之隨機變異之模型

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
IL181209A0 (en) * 2007-02-07 2007-07-04 Nova Measuring Instr Ltd A method of measurement
JP5605727B2 (ja) 2010-04-06 2014-10-15 Ｊｎｃ株式会社 セレンテラジン類縁体及びセレンテラミド類縁体
US20130042089A1 (en) 2011-08-11 2013-02-14 Advanced Micro Devices, Inc. Word line late kill in scheduler
US9091942B2 (en) * 2011-11-18 2015-07-28 International Business Machines Corporation Scatterometry measurement of line edge roughness in the bright field
NL2009982A (en) * 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
US8843875B2 (en) 2012-05-08 2014-09-23 Kla-Tencor Corporation Measurement model optimization based on parameter variations across a wafer
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
US10386727B2 (en) * 2014-03-18 2019-08-20 Asml Netherlands B.V. Pattern placement error aware optimization
JP6227466B2 (ja) * 2014-04-14 2017-11-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置および検査装置
JP6960462B2 (ja) 2017-02-28 2021-11-05 ケーエルエー コーポレイション オーバレイ計量データの確率論的挙動の影響の判別
US10565697B2 (en) 2017-10-22 2020-02-18 Kla-Tencor Corporation Utilizing overlay misregistration error estimations in imaging overlay metrology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921916B2 (en) * 2000-08-30 2005-07-26 Kla -Tenocor Technologies Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
TW201411277A (zh) * 2012-08-06 2014-03-16 Asml Netherlands Bv 用於藉由嵌段共聚物之自我組裝在一基板上提供微影特徵之方法
TW201543172A (zh) * 2014-02-11 2015-11-16 Asml Netherlands Bv 用於計算任意圖案中之隨機變異之模型
US20170010538A1 (en) * 2014-02-11 2017-01-12 Asml Netherlands B.V. Model for calculating a stochastic variation in an arbitrary pattern

Also Published As

Publication number Publication date
KR102351345B1 (ko) 2022-01-13
TW201840954A (zh) 2018-11-16
CN110383442A (zh) 2019-10-25
WO2018160502A1 (en) 2018-09-07
JP6960462B2 (ja) 2021-11-05
US20190049858A1 (en) 2019-02-14
SG11201907074RA (en) 2019-09-27
CN110383442B (zh) 2023-10-10
US10901325B2 (en) 2021-01-26
KR20190115105A (ko) 2019-10-10
JP2020511003A (ja) 2020-04-09

Similar Documents

Publication Publication Date Title
TWI735747B (zh) 度量方法及模組，分段疊對目標，及電腦程式產品
TWI529369B (zh) Charged particle beam device and inspection device
KR102349124B1 (ko) 측정 방법 및 장치
US11120182B2 (en) Methodology of incorporating wafer physical measurement with digital simulation for improving semiconductor device fabrication
TWI877374B (zh) 校正在精簡模型中的隨機訊號的方法及系統
KR102194154B1 (ko) 패턴 계측 장치
JP7097447B2 (ja) 電子顕微鏡を使用した半導体計測および欠陥分類
JP2017508273A (ja) 要件に対するターゲット及びプロセス感度の分析
KR101615843B1 (ko) 반도체 계측 장치 및 기록 매체
CN102027418A (zh) 通过opc模型空间中的局部化监视结构进行集成电路制造的实时监视的方法
CN108475026A (zh) 热点及工艺窗监测
JP2018505388A (ja) ウェハにおける臨界寸法問題及びパターン不良の干渉法を用いた予測及び制御
KR101947290B1 (ko) Ic 제조 프로세스 모델의 파라미터 결정 방법
Tabery et al. Evaluation of OPC quality using automated edge placement error measurement with CD-SEM
JP2005259830A (ja) 半導体デバイスのパターン形状評価方法及びその装置
Fuchimoto et al. Measurement technology to quantify 2D pattern shape in sub-2x nm advanced lithography
US9262819B1 (en) System and method for estimating spatial characteristics of integrated circuits
Toyoda et al. SEM-contour shape analysis method for advanced semiconductor devices
CN110870052B (zh) 在成像技术中估计振幅及相位不对称性以在叠加计量中达到高精准度
Kalhor et al. Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist
US20190101905A1 (en) Generating risk inventory and common process window for adjustment of manufacturing tool
US10459334B2 (en) Facilitation of orthotopic patterns during substrate fabrication
Fang et al. Understanding the impact of CD-SEM artifacts on metrology via experiments and simulations
TW201717255A (zh) 利用基於目標之空中圖像之變換之目標及焦點度量
KR20250140548A (ko) 예상 임계 치수를 통한 결함 확률 모델링에 의한 실패율 예측의 정확도 개선