CN110383442B - 确定随机行为对叠加计量数据的影响 - Google Patents
确定随机行为对叠加计量数据的影响 Download PDFInfo
- Publication number
- CN110383442B CN110383442B CN201880014361.8A CN201880014361A CN110383442B CN 110383442 B CN110383442 B CN 110383442B CN 201880014361 A CN201880014361 A CN 201880014361A CN 110383442 B CN110383442 B CN 110383442B
- Authority
- CN
- China
- Prior art keywords
- metrology
- model
- uncertainty
- estimating
- computer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762464382P | 2017-02-28 | 2017-02-28 | |
| US62/464,382 | 2017-02-28 | ||
| US201762591104P | 2017-11-27 | 2017-11-27 | |
| US62/591,104 | 2017-11-27 | ||
| PCT/US2018/019793 WO2018160502A1 (en) | 2017-02-28 | 2018-02-27 | Determining the impacts of stochastic behavior on overlay metrology data |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110383442A CN110383442A (zh) | 2019-10-25 |
| CN110383442B true CN110383442B (zh) | 2023-10-10 |
Family
ID=63371265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880014361.8A Active CN110383442B (zh) | 2017-02-28 | 2018-02-27 | 确定随机行为对叠加计量数据的影响 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10901325B2 (enExample) |
| JP (1) | JP6960462B2 (enExample) |
| KR (1) | KR102351345B1 (enExample) |
| CN (1) | CN110383442B (enExample) |
| SG (1) | SG11201907074RA (enExample) |
| TW (1) | TWI735747B (enExample) |
| WO (1) | WO2018160502A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6960462B2 (ja) * | 2017-02-28 | 2021-11-05 | ケーエルエー コーポレイション | オーバレイ計量データの確率論的挙動の影響の判別 |
| US11521825B2 (en) | 2017-04-13 | 2022-12-06 | Fractilia, Llc | System and method for predicting stochastic-aware process window and yield and their use for process monitoring and control |
| US11508546B2 (en) | 2017-04-13 | 2022-11-22 | Fractilia, Llc | System and method for low-noise edge detection and its use for process monitoring and control |
| US11380516B2 (en) | 2017-04-13 | 2022-07-05 | Fractilia, Llc | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
| US12142454B2 (en) | 2017-04-13 | 2024-11-12 | Fractilla, LLC | Detection of probabilistic process windows |
| US10664955B2 (en) | 2017-04-13 | 2020-05-26 | Fractilia, Llc | Edge detection system and its use for machine learning |
| US11361937B2 (en) | 2017-04-13 | 2022-06-14 | Fractilia, Llc | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
| US10522322B2 (en) | 2017-04-13 | 2019-12-31 | Fractilia, Llc | System and method for generating and analyzing roughness measurements |
| US10648801B2 (en) | 2017-04-13 | 2020-05-12 | Fractilia, Llc | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
| US11355306B2 (en) | 2017-04-13 | 2022-06-07 | Fractilia, Llc | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
| US10176966B1 (en) | 2017-04-13 | 2019-01-08 | Fractilia, Llc | Edge detection system |
| US10656532B2 (en) | 2017-04-13 | 2020-05-19 | Fractilia, Llc | Edge detection system and its use for optical proximity correction |
| US10488188B2 (en) | 2017-04-13 | 2019-11-26 | Fractilia, Llc | System and method for removing noise from roughness measurements |
| US10445889B2 (en) * | 2017-06-08 | 2019-10-15 | Inspectrology LLC | Method for measuring overlay offset in an integrated circuit and related technology |
| JP6942555B2 (ja) * | 2017-08-03 | 2021-09-29 | 東京エレクトロン株式会社 | 基板処理方法、コンピュータ記憶媒体及び基板処理システム |
| US11333982B2 (en) * | 2019-01-28 | 2022-05-17 | Kla Corporation | Scaling metric for quantifying metrology sensitivity to process variation |
| WO2020173654A1 (en) * | 2019-02-25 | 2020-09-03 | Asml Netherlands B.V. | Method for determining stochastic variation of printed patterns |
| US10990019B2 (en) * | 2019-04-09 | 2021-04-27 | Kla Corporation | Stochastic reticle defect dispositioning |
| US11353799B1 (en) * | 2019-07-23 | 2022-06-07 | Kla Corporation | System and method for error reduction for metrology measurements |
| US11568101B2 (en) * | 2019-08-13 | 2023-01-31 | International Business Machines Corporation | Predictive multi-stage modelling for complex process control |
| US11725934B2 (en) * | 2019-11-28 | 2023-08-15 | Kla Corporation | Systems and methods for metrology optimization based on metrology landscapes |
| KR102590974B1 (ko) * | 2021-09-10 | 2023-10-17 | 프랙틸리아 엘엘씨 | 확률적 프로세스 윈도우들의 검출 |
| US12444628B2 (en) | 2022-06-24 | 2025-10-14 | Kla Corporation | Image modeling-assisted contour extraction |
| US20250104216A1 (en) * | 2023-09-26 | 2025-03-27 | Kla Corporation | Method to calibrate, predict, and control stochastic defects in euv lithography |
| CN117311103B (zh) * | 2023-10-31 | 2024-08-06 | 魅杰光电科技(上海)有限公司 | 套刻误差测量方法、装置、系统及存储介质 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104736962A (zh) * | 2012-09-05 | 2015-06-24 | 科磊股份有限公司 | 用于估计及校正偏移目标不准确度的方法 |
| CN105992975A (zh) * | 2014-02-11 | 2016-10-05 | Asml荷兰有限公司 | 用于计算任意图案的随机变化的模型 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7068833B1 (en) * | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| IL181209A0 (en) * | 2007-02-07 | 2007-07-04 | Nova Measuring Instr Ltd | A method of measurement |
| JP5605727B2 (ja) | 2010-04-06 | 2014-10-15 | Jnc株式会社 | セレンテラジン類縁体及びセレンテラミド類縁体 |
| US20130042089A1 (en) | 2011-08-11 | 2013-02-14 | Advanced Micro Devices, Inc. | Word line late kill in scheduler |
| US9091942B2 (en) * | 2011-11-18 | 2015-07-28 | International Business Machines Corporation | Scatterometry measurement of line edge roughness in the bright field |
| NL2009982A (en) * | 2012-01-10 | 2013-07-15 | Asml Netherlands Bv | Source mask optimization to reduce stochastic effects. |
| US8843875B2 (en) | 2012-05-08 | 2014-09-23 | Kla-Tencor Corporation | Measurement model optimization based on parameter variations across a wafer |
| TWI526777B (zh) * | 2012-08-06 | 2016-03-21 | Asml荷蘭公司 | 用於藉由嵌段共聚物之自我組裝在一基板上提供微影特徵之方法 |
| US10386727B2 (en) * | 2014-03-18 | 2019-08-20 | Asml Netherlands B.V. | Pattern placement error aware optimization |
| JP6227466B2 (ja) * | 2014-04-14 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置および検査装置 |
| JP6960462B2 (ja) | 2017-02-28 | 2021-11-05 | ケーエルエー コーポレイション | オーバレイ計量データの確率論的挙動の影響の判別 |
| US10565697B2 (en) | 2017-10-22 | 2020-02-18 | Kla-Tencor Corporation | Utilizing overlay misregistration error estimations in imaging overlay metrology |
-
2018
- 2018-02-27 JP JP2019546861A patent/JP6960462B2/ja active Active
- 2018-02-27 SG SG11201907074RA patent/SG11201907074RA/en unknown
- 2018-02-27 KR KR1020197028612A patent/KR102351345B1/ko active Active
- 2018-02-27 WO PCT/US2018/019793 patent/WO2018160502A1/en not_active Ceased
- 2018-02-27 TW TW107106629A patent/TWI735747B/zh active
- 2018-02-27 CN CN201880014361.8A patent/CN110383442B/zh active Active
- 2018-02-27 US US15/763,662 patent/US10901325B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104736962A (zh) * | 2012-09-05 | 2015-06-24 | 科磊股份有限公司 | 用于估计及校正偏移目标不准确度的方法 |
| CN105992975A (zh) * | 2014-02-11 | 2016-10-05 | Asml荷兰有限公司 | 用于计算任意图案的随机变化的模型 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102351345B1 (ko) | 2022-01-13 |
| TW201840954A (zh) | 2018-11-16 |
| CN110383442A (zh) | 2019-10-25 |
| TWI735747B (zh) | 2021-08-11 |
| WO2018160502A1 (en) | 2018-09-07 |
| JP6960462B2 (ja) | 2021-11-05 |
| US20190049858A1 (en) | 2019-02-14 |
| SG11201907074RA (en) | 2019-09-27 |
| US10901325B2 (en) | 2021-01-26 |
| KR20190115105A (ko) | 2019-10-10 |
| JP2020511003A (ja) | 2020-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110383442B (zh) | 确定随机行为对叠加计量数据的影响 | |
| US7587704B2 (en) | System and method for mask verification using an individual mask error model | |
| KR102349124B1 (ko) | 측정 방법 및 장치 | |
| US8279409B1 (en) | System and method for calibrating a lithography model | |
| KR101600647B1 (ko) | 더블-패턴처리 프로세스용 리소그래피 검증 수행 방법 및 시스템 | |
| US11120182B2 (en) | Methodology of incorporating wafer physical measurement with digital simulation for improving semiconductor device fabrication | |
| TWI648517B (zh) | Pattern measuring device and computer program | |
| CN106407490B (zh) | 在芯片设计布局中发现未知问题图案的系统与方法 | |
| TW202018435A (zh) | 推定缺陷之發生的系統及電腦可讀媒體 | |
| CN110546574A (zh) | 维护工艺指印集合 | |
| CN111581907A (zh) | 一种Hessian-Free的光刻掩模优化方法、装置及电子设备 | |
| CN113759668A (zh) | 在紧凑建模中校准随机信号 | |
| CN108475026A (zh) | 热点及工艺窗监测 | |
| CN110325923B (zh) | 测量变化的方法、检查系统、计算机程序和计算机系统 | |
| Tabery et al. | Evaluation of OPC quality using automated edge placement error measurement with CD-SEM | |
| KR20200028487A (ko) | 리소그래피 공정을 위한 기판, 계측 장치 및 관련 방법 | |
| US9262819B1 (en) | System and method for estimating spatial characteristics of integrated circuits | |
| CN114967377A (zh) | 排列获得方法、曝光装置、物品制造方法和信息处理装置 | |
| Toyoda et al. | SEM-contour shape analysis method for advanced semiconductor devices | |
| TW201945853A (zh) | 用於判定關於由微影製程形成之特徵之經校正尺寸參數值的方法及相關設備 | |
| Verduijn et al. | Prediction of EUV stochastic microbridge probabilities by lithography simulations | |
| CN112136082B (zh) | 估计衬底的参数 | |
| Adel et al. | Impact of stochastic process variations on overlay mark fidelity" towards the 5nm node" | |
| Tamamushi et al. | Using metrology capabilities of mask inspection equipment for optimizing total lithography performance | |
| WO2024256098A1 (en) | Method for selecting pattern reference features of a substantially irregular pattern layout |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TG01 | Patent term adjustment | ||
| TG01 | Patent term adjustment |