TWI732047B - 發光二極體晶片的製造方法及發光二極體晶片 - Google Patents
發光二極體晶片的製造方法及發光二極體晶片 Download PDFInfo
- Publication number
- TWI732047B TWI732047B TW106133663A TW106133663A TWI732047B TW I732047 B TWI732047 B TW I732047B TW 106133663 A TW106133663 A TW 106133663A TW 106133663 A TW106133663 A TW 106133663A TW I732047 B TWI732047 B TW I732047B
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- Prior art keywords
- wafer
- light
- emitting diode
- transparent substrate
- transparent
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 230000010354 integration Effects 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 238000005520 cutting process Methods 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 69
- 230000003287 optical effect Effects 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Led Device Packages (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016216395A JP2018074109A (ja) | 2016-11-04 | 2016-11-04 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
JP2016-216395 | 2016-11-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201830723A TW201830723A (zh) | 2018-08-16 |
TWI732047B true TWI732047B (zh) | 2021-07-01 |
Family
ID=62079569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106133663A TWI732047B (zh) | 2016-11-04 | 2017-09-29 | 發光二極體晶片的製造方法及發光二極體晶片 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2018074109A (ko) |
KR (1) | KR102327105B1 (ko) |
CN (1) | CN108022999A (ko) |
TW (1) | TWI732047B (ko) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093728A (ja) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | 発光装置 |
US20130032835A1 (en) * | 2011-06-15 | 2013-02-07 | Shatalov Maxim S | Device with Inverted Large Scale Light Extraction Structures |
JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
KR20070000952A (ko) * | 2005-06-27 | 2007-01-03 | 주식회사 엘지화학 | 열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법 |
JP5187610B2 (ja) * | 2006-03-29 | 2013-04-24 | スタンレー電気株式会社 | 窒化物半導体ウエハないし窒化物半導体装置及びその製造方法 |
JP2011009305A (ja) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | 発光モジュール |
KR101726807B1 (ko) * | 2010-11-01 | 2017-04-14 | 삼성전자주식회사 | 반도체 발광소자 |
TWI581458B (zh) * | 2012-12-07 | 2017-05-01 | 晶元光電股份有限公司 | 發光元件 |
JP2014175354A (ja) | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
JP2014175362A (ja) * | 2013-03-06 | 2014-09-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
KR101426433B1 (ko) | 2013-04-30 | 2014-08-06 | 주식회사 세미콘라이트 | 반도체 발광소자를 제조하는 방법 |
EP2997606B1 (en) * | 2013-05-15 | 2016-07-13 | Koninklijke Philips N.V. | Led with scattering features in substrate |
JP6255235B2 (ja) * | 2013-12-20 | 2017-12-27 | 株式会社ディスコ | 発光チップ |
WO2015099084A1 (ja) * | 2013-12-26 | 2015-07-02 | 信越石英株式会社 | 波長変換用石英ガラス部材及びその製造方法 |
JP6255255B2 (ja) * | 2014-01-27 | 2017-12-27 | 株式会社ディスコ | 光デバイスの加工方法 |
JP2015192100A (ja) * | 2014-03-28 | 2015-11-02 | 豊田合成株式会社 | 発光素子および発光素子の製造方法 |
TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
-
2016
- 2016-11-04 JP JP2016216395A patent/JP2018074109A/ja active Pending
-
2017
- 2017-09-29 TW TW106133663A patent/TWI732047B/zh active
- 2017-10-25 CN CN201711005663.2A patent/CN108022999A/zh active Pending
- 2017-11-01 KR KR1020170144549A patent/KR102327105B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093728A (ja) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | 発光装置 |
US20130032835A1 (en) * | 2011-06-15 | 2013-02-07 | Shatalov Maxim S | Device with Inverted Large Scale Light Extraction Structures |
JP2014239123A (ja) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | 加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201830723A (zh) | 2018-08-16 |
KR20180050230A (ko) | 2018-05-14 |
JP2018074109A (ja) | 2018-05-10 |
KR102327105B1 (ko) | 2021-11-15 |
CN108022999A (zh) | 2018-05-11 |
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