JP2018074109A - 発光ダイオードチップの製造方法及び発光ダイオードチップ - Google Patents

発光ダイオードチップの製造方法及び発光ダイオードチップ Download PDF

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Publication number
JP2018074109A
JP2018074109A JP2016216395A JP2016216395A JP2018074109A JP 2018074109 A JP2018074109 A JP 2018074109A JP 2016216395 A JP2016216395 A JP 2016216395A JP 2016216395 A JP2016216395 A JP 2016216395A JP 2018074109 A JP2018074109 A JP 2018074109A
Authority
JP
Japan
Prior art keywords
emitting diode
wafer
transparent substrate
light emitting
diode chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016216395A
Other languages
English (en)
Japanese (ja)
Inventor
卓 岡村
Taku Okamura
卓 岡村
宏 北村
Hiroshi Kitamura
宏 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2016216395A priority Critical patent/JP2018074109A/ja
Priority to TW106133663A priority patent/TWI732047B/zh
Priority to CN201711005663.2A priority patent/CN108022999A/zh
Priority to KR1020170144549A priority patent/KR102327105B1/ko
Publication of JP2018074109A publication Critical patent/JP2018074109A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016216395A 2016-11-04 2016-11-04 発光ダイオードチップの製造方法及び発光ダイオードチップ Pending JP2018074109A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016216395A JP2018074109A (ja) 2016-11-04 2016-11-04 発光ダイオードチップの製造方法及び発光ダイオードチップ
TW106133663A TWI732047B (zh) 2016-11-04 2017-09-29 發光二極體晶片的製造方法及發光二極體晶片
CN201711005663.2A CN108022999A (zh) 2016-11-04 2017-10-25 发光二极管芯片的制造方法和发光二极管芯片
KR1020170144549A KR102327105B1 (ko) 2016-11-04 2017-11-01 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016216395A JP2018074109A (ja) 2016-11-04 2016-11-04 発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (1)

Publication Number Publication Date
JP2018074109A true JP2018074109A (ja) 2018-05-10

Family

ID=62079569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016216395A Pending JP2018074109A (ja) 2016-11-04 2016-11-04 発光ダイオードチップの製造方法及び発光ダイオードチップ

Country Status (4)

Country Link
JP (1) JP2018074109A (ko)
KR (1) KR102327105B1 (ko)
CN (1) CN108022999A (ko)
TW (1) TWI732047B (ko)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093728A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd 発光装置
JP2006278751A (ja) * 2005-03-29 2006-10-12 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
JP2007266472A (ja) * 2006-03-29 2007-10-11 Stanley Electric Co Ltd 窒化物半導体ウエハないし窒化物半導体装置及びその製造方法
JP2011009305A (ja) * 2009-06-23 2011-01-13 Koito Mfg Co Ltd 発光モジュール
US20140159090A1 (en) * 2012-12-07 2014-06-12 Epistar Corporation light emitting device
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015192100A (ja) * 2014-03-28 2015-11-02 豊田合成株式会社 発光素子および発光素子の製造方法
JP2016076685A (ja) * 2014-10-08 2016-05-12 株式会社東芝 半導体発光装置及びその製造方法
JP2016521463A (ja) * 2013-05-15 2016-07-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 基板内に散乱機構を有するｌｅｄ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100959079B1 (ko) * 2005-06-27 2010-05-20 한빔 주식회사 열방출이 개선된 전면발광형 발광다이오드 소자 및 이의 제조방법
KR101726807B1 (ko) * 2010-11-01 2017-04-14 삼성전자주식회사 반도체 발광소자
JP2014175362A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
KR101426433B1 (ko) 2013-04-30 2014-08-06 주식회사 세미콘라이트 반도체 발광소자를 제조하는 방법
JP6255235B2 (ja) * 2013-12-20 2017-12-27 株式会社ディスコ 発光チップ
EP2944620A1 (en) * 2013-12-26 2015-11-18 Shin-Etsu Quartz Products Co., Ltd. Silica glass member for wavelength conversion, and production method therefor
JP6255255B2 (ja) * 2014-01-27 2017-12-27 株式会社ディスコ 光デバイスの加工方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093728A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd 発光装置
JP2006278751A (ja) * 2005-03-29 2006-10-12 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
JP2007266472A (ja) * 2006-03-29 2007-10-11 Stanley Electric Co Ltd 窒化物半導体ウエハないし窒化物半導体装置及びその製造方法
JP2011009305A (ja) * 2009-06-23 2011-01-13 Koito Mfg Co Ltd 発光モジュール
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
US20140159090A1 (en) * 2012-12-07 2014-06-12 Epistar Corporation light emitting device
JP2016521463A (ja) * 2013-05-15 2016-07-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 基板内に散乱機構を有するｌｅｄ
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015192100A (ja) * 2014-03-28 2015-11-02 豊田合成株式会社 発光素子および発光素子の製造方法
JP2016076685A (ja) * 2014-10-08 2016-05-12 株式会社東芝 半導体発光装置及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LIANG-JYI YAN ET AL.: ""Improved Light Extraction Efficiency in AlGaInP Light-Emitting Diodes by Applying a Periodic Textur", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 20, no. 20, JPN6020033600, 15 October 2008 (2008-10-15), pages 1724 - 1726, XP011235288, ISSN: 0004342013, DOI: 10.1109/LPT.2008.2004564 *

Also Published As

Publication number Publication date
KR102327105B1 (ko) 2021-11-15
KR20180050230A (ko) 2018-05-14
CN108022999A (zh) 2018-05-11
TWI732047B (zh) 2021-07-01
TW201830723A (zh) 2018-08-16

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