TWI722085B - 離子植入機、離子植入方法及設備 - Google Patents

離子植入機、離子植入方法及設備 Download PDF

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Publication number
TWI722085B
TWI722085B TW105143744A TW105143744A TWI722085B TW I722085 B TWI722085 B TW I722085B TW 105143744 A TW105143744 A TW 105143744A TW 105143744 A TW105143744 A TW 105143744A TW I722085 B TWI722085 B TW I722085B
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TW
Taiwan
Prior art keywords
plasma gun
current
submerged plasma
clamp
bulk resistivity
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Application number
TW105143744A
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English (en)
Chinese (zh)
Other versions
TW201732862A (zh
Inventor
麥可 S. 奥斯邦
大衛 E. 蘇若恩
朱利安 Ｇ． 布雷克
Original Assignee
美商瓦里安半導體設備公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW105143744A 2016-01-14 2016-12-29 離子植入機、離子植入方法及設備 TWI722085B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662278950P 2016-01-14 2016-01-14
US62/278,950 2016-01-14
US15/131,520 US9824857B2 (en) 2016-01-14 2016-04-18 Method for implantation of semiconductor wafers having high bulk resistivity
US15/131,520 2016-04-18

Publications (2)

Publication Number Publication Date
TW201732862A TW201732862A (zh) 2017-09-16
TWI722085B true TWI722085B (zh) 2021-03-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW105143744A TWI722085B (zh) 2016-01-14 2016-12-29 離子植入機、離子植入方法及設備

Country Status (6)

Country Link
US (1) US9824857B2 (enExample)
JP (1) JP6814218B2 (enExample)
KR (1) KR102483421B1 (enExample)
CN (1) CN108463872B (enExample)
TW (1) TWI722085B (enExample)
WO (1) WO2017123438A1 (enExample)

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EP3503159B1 (fr) * 2017-12-20 2021-05-05 The Swatch Group Research and Development Ltd Procédé d'implantation d'ions sur une surface d'un objet à traiter
CN111987030A (zh) * 2019-05-22 2020-11-24 芯恩（青岛）集成电路有限公司 半导体设备及提高静电吸盘吸附晶圆能力的方法
KR102874792B1 (ko) * 2020-05-21 2025-10-23 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 방법
US20210366757A1 (en) * 2020-05-21 2021-11-25 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11315819B2 (en) 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11875967B2 (en) * 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11538714B2 (en) * 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination

Citations (6)

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US6489225B1 (en) * 1999-06-11 2002-12-03 Electron Vision Corporation Method for controlling dopant profiles and dopant activation by electron beam processing
US20050218344A1 (en) * 2004-04-05 2005-10-06 Ronald Starcher Controlled charge neutralization of ion-implanted articles
JP2009238632A (ja) * 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd イオン注入装置及び半導体装置の製造方法
TW201342438A (zh) * 2012-04-04 2013-10-16 Taiwan Semiconductor Mfg 離子注入裝置、離子注入設備系統及離子注入方法
JP2014165076A (ja) * 2013-02-26 2014-09-08 Toshiba Corp イオン注入装置およびイオン注入装置の状態判定方法
TW201523687A (zh) * 2013-10-25 2015-06-16 Varian Semiconductor Equipment 電漿流槍與電漿迴路組件

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JPH09167593A (ja) * 1995-12-14 1997-06-24 Nissin Electric Co Ltd イオン注入装置
JPH1027566A (ja) * 1996-07-10 1998-01-27 Nissin Electric Co Ltd 基板保持装置
GB9710380D0 (en) 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
KR100416661B1 (ko) * 2001-02-20 2004-01-31 동부전자 주식회사 반도체 이온 주입 장비에서의 이온 빔 중성화 시스템
KR20040005402A (ko) * 2002-07-10 2004-01-16 삼성전자주식회사 이온 주입 설비의 플라즈마 플라드 건
JP2005072521A (ja) * 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置
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KR20060019301A (ko) * 2004-08-27 2006-03-03 삼성전자주식회사 이온 주입 설비의 플라즈마 플루드 건 필라멘트 인슐레이터
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Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
US6489225B1 (en) * 1999-06-11 2002-12-03 Electron Vision Corporation Method for controlling dopant profiles and dopant activation by electron beam processing
US20050218344A1 (en) * 2004-04-05 2005-10-06 Ronald Starcher Controlled charge neutralization of ion-implanted articles
JP2009238632A (ja) * 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd イオン注入装置及び半導体装置の製造方法
TW201342438A (zh) * 2012-04-04 2013-10-16 Taiwan Semiconductor Mfg 離子注入裝置、離子注入設備系統及離子注入方法
JP2014165076A (ja) * 2013-02-26 2014-09-08 Toshiba Corp イオン注入装置およびイオン注入装置の状態判定方法
TW201523687A (zh) * 2013-10-25 2015-06-16 Varian Semiconductor Equipment 電漿流槍與電漿迴路組件

Also Published As

Publication number Publication date
JP2019508840A (ja) 2019-03-28
CN108463872A (zh) 2018-08-28
US20170207063A1 (en) 2017-07-20
JP6814218B2 (ja) 2021-01-13
KR20180095711A (ko) 2018-08-27
TW201732862A (zh) 2017-09-16
US9824857B2 (en) 2017-11-21
KR102483421B1 (ko) 2022-12-30
CN108463872B (zh) 2022-10-14
WO2017123438A1 (en) 2017-07-20

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