CN108463872B - 离子植入机、半导体晶片的植入设备及方法 - Google Patents

离子植入机、半导体晶片的植入设备及方法 Download PDF

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CN108463872B
CN108463872B CN201780006590.0A CN201780006590A CN108463872B CN 108463872 B CN108463872 B CN 108463872B CN 201780006590 A CN201780006590 A CN 201780006590A CN 108463872 B CN108463872 B CN 108463872B
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plasma gun
current
high bulk
bulk resistivity
wafer
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CN108463872A (zh
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麦可·W·奥斯邦
大卫·E·苏若恩
朱利安·G·布雷克
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201780006590.0A 2016-01-14 2017-01-04 离子植入机、半导体晶片的植入设备及方法 Active CN108463872B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662278950P 2016-01-14 2016-01-14
US62/278,950 2016-01-14
US15/131,520 US9824857B2 (en) 2016-01-14 2016-04-18 Method for implantation of semiconductor wafers having high bulk resistivity
US15/131,520 2016-04-18
PCT/US2017/012112 WO2017123438A1 (en) 2016-01-14 2017-01-04 Method for implantation of semiconductor wafers having high bulk resistivity

Publications (2)

Publication Number Publication Date
CN108463872A CN108463872A (zh) 2018-08-28
CN108463872B true CN108463872B (zh) 2022-10-14

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Country Link
US (1) US9824857B2 (enExample)
JP (1) JP6814218B2 (enExample)
KR (1) KR102483421B1 (enExample)
CN (1) CN108463872B (enExample)
TW (1) TWI722085B (enExample)
WO (1) WO2017123438A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3503159B1 (fr) * 2017-12-20 2021-05-05 The Swatch Group Research and Development Ltd Procédé d'implantation d'ions sur une surface d'un objet à traiter
CN111987030A (zh) * 2019-05-22 2020-11-24 芯恩（青岛）集成电路有限公司 半导体设备及提高静电吸盘吸附晶圆能力的方法
KR102874792B1 (ko) * 2020-05-21 2025-10-23 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 방법
US20210366757A1 (en) * 2020-05-21 2021-11-25 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11315819B2 (en) 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11875967B2 (en) * 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11538714B2 (en) * 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072521A (ja) * 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置
CN101523357A (zh) * 2006-10-04 2009-09-02 应用材料股份有限公司 等离子腔室中用于基板夹持的设备与方法
JP2013206833A (ja) * 2012-03-29 2013-10-07 Sen Corp イオン注入装置及びその制御方法
CN103890897A (zh) * 2011-07-28 2014-06-25 先进能源工业公司 用于先进等离子体能量处理系统的离子能量控制系统
CN104347358A (zh) * 2014-09-15 2015-02-11 上海华力微电子有限公司 改善器件等离子体损伤的方法
CN104994676A (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 等离子体处理装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215552A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp イオン注入装置
JPH09167593A (ja) * 1995-12-14 1997-06-24 Nissin Electric Co Ltd イオン注入装置
JPH1027566A (ja) * 1996-07-10 1998-01-27 Nissin Electric Co Ltd 基板保持装置
GB9710380D0 (en) 1997-05-20 1997-07-16 Applied Materials Inc Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation
US6489225B1 (en) * 1999-06-11 2002-12-03 Electron Vision Corporation Method for controlling dopant profiles and dopant activation by electron beam processing
KR100416661B1 (ko) * 2001-02-20 2004-01-31 동부전자 주식회사 반도체 이온 주입 장비에서의 이온 빔 중성화 시스템
KR20040005402A (ko) * 2002-07-10 2004-01-16 삼성전자주식회사 이온 주입 설비의 플라즈마 플라드 건
JP3742638B2 (ja) * 2003-09-19 2006-02-08 アプライド マテリアルズ インコーポレイテッド エレクトロンフラッド装置及びイオン注入装置
US7038223B2 (en) * 2004-04-05 2006-05-02 Burle Technologies, Inc. Controlled charge neutralization of ion-implanted articles
KR20060019301A (ko) * 2004-08-27 2006-03-03 삼성전자주식회사 이온 주입 설비의 플라즈마 플루드 건 필라멘트 인슐레이터
JP4468194B2 (ja) * 2005-01-28 2010-05-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
TWI426541B (zh) * 2005-06-03 2014-02-11 Axcelis Tech Inc 用於質量分析器之射束阻擋組件、離子植入系統以及用於防止在離子植入系統中粒子污染之方法
KR20070074199A (ko) * 2006-01-07 2007-07-12 삼성전자주식회사 이온 주입 장치의 플라즈마 플러드 건
US7476877B2 (en) * 2006-02-14 2009-01-13 Varian Semiconductor Equipment Associates, Inc. Wafer charge monitoring
JP2009238632A (ja) 2008-03-27 2009-10-15 Fujitsu Microelectronics Ltd イオン注入装置及び半導体装置の製造方法
US9053907B2 (en) * 2012-04-04 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of ion neutralization with multiple-zoned plasma flood gun
JP5847745B2 (ja) 2013-02-26 2016-01-27 株式会社東芝 イオン注入装置およびイオン注入装置の状態判定方法
US9916967B2 (en) * 2013-03-13 2018-03-13 Applied Materials, Inc. Fast response fluid control system
US9417280B2 (en) 2013-04-29 2016-08-16 Varian Semiconductor Associates, Inc. System and method for analyzing voltage breakdown in electrostatic chucks
US9070538B2 (en) * 2013-10-25 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Pinched plasma bridge flood gun for substrate charge neutralization

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072521A (ja) * 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置
CN101523357A (zh) * 2006-10-04 2009-09-02 应用材料股份有限公司 等离子腔室中用于基板夹持的设备与方法
CN104994676A (zh) * 2011-03-30 2015-10-21 东京毅力科创株式会社 等离子体处理装置
CN103890897A (zh) * 2011-07-28 2014-06-25 先进能源工业公司 用于先进等离子体能量处理系统的离子能量控制系统
JP2013206833A (ja) * 2012-03-29 2013-10-07 Sen Corp イオン注入装置及びその制御方法
CN104347358A (zh) * 2014-09-15 2015-02-11 上海华力微电子有限公司 改善器件等离子体损伤的方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
化学机械抛光中的硅片夹持技术;孙禹辉等;《半导体技术》;20040423(第04期);全文 *
大角度离子注入机控制系统软件设计;罗宏洋等;《电子工业专用设备》;20090220(第02期);全文 *

Also Published As

Publication number Publication date
JP2019508840A (ja) 2019-03-28
CN108463872A (zh) 2018-08-28
TWI722085B (zh) 2021-03-21
US20170207063A1 (en) 2017-07-20
JP6814218B2 (ja) 2021-01-13
KR20180095711A (ko) 2018-08-27
TW201732862A (zh) 2017-09-16
US9824857B2 (en) 2017-11-21
KR102483421B1 (ko) 2022-12-30
WO2017123438A1 (en) 2017-07-20

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