JP2019508840A5 - - Google Patents
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- Publication number
- JP2019508840A5 JP2019508840A5 JP2018535852A JP2018535852A JP2019508840A5 JP 2019508840 A5 JP2019508840 A5 JP 2019508840A5 JP 2018535852 A JP2018535852 A JP 2018535852A JP 2018535852 A JP2018535852 A JP 2018535852A JP 2019508840 A5 JP2019508840 A5 JP 2019508840A5
- Authority
- JP
- Japan
- Prior art keywords
- clamp
- current
- hbr
- flood gun
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 35
- 230000008859 change Effects 0.000 claims description 30
- 238000002347 injection Methods 0.000 claims description 19
- 239000007924 injection Substances 0.000 claims description 19
- 238000005286 illumination Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 14
- 238000012544 monitoring process Methods 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 4
- 238000001802 infusion Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 56
- 235000012431 wafers Nutrition 0.000 description 45
- 230000008569 process Effects 0.000 description 23
- 238000010884 ion-beam technique Methods 0.000 description 14
- 238000002513 implantation Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000979 retarding effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662278950P | 2016-01-14 | 2016-01-14 | |
| US62/278,950 | 2016-01-14 | ||
| US15/131,520 US9824857B2 (en) | 2016-01-14 | 2016-04-18 | Method for implantation of semiconductor wafers having high bulk resistivity |
| US15/131,520 | 2016-04-18 | ||
| PCT/US2017/012112 WO2017123438A1 (en) | 2016-01-14 | 2017-01-04 | Method for implantation of semiconductor wafers having high bulk resistivity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019508840A JP2019508840A (ja) | 2019-03-28 |
| JP2019508840A5 true JP2019508840A5 (enExample) | 2020-02-06 |
| JP6814218B2 JP6814218B2 (ja) | 2021-01-13 |
Family
ID=59311993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018535852A Active JP6814218B2 (ja) | 2016-01-14 | 2017-01-04 | 半導体ウェハーの注入用のイオン注入機、装置及びその方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9824857B2 (enExample) |
| JP (1) | JP6814218B2 (enExample) |
| KR (1) | KR102483421B1 (enExample) |
| CN (1) | CN108463872B (enExample) |
| TW (1) | TWI722085B (enExample) |
| WO (1) | WO2017123438A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3503159B1 (fr) * | 2017-12-20 | 2021-05-05 | The Swatch Group Research and Development Ltd | Procédé d'implantation d'ions sur une surface d'un objet à traiter |
| CN111987030A (zh) * | 2019-05-22 | 2020-11-24 | 芯恩（青岛）集成电路有限公司 | 半导体设备及提高静电吸盘吸附晶圆能力的方法 |
| KR102874792B1 (ko) * | 2020-05-21 | 2025-10-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 프로세싱 방법 |
| US20210366757A1 (en) * | 2020-05-21 | 2021-11-25 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11315819B2 (en) | 2020-05-21 | 2022-04-26 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11875967B2 (en) * | 2020-05-21 | 2024-01-16 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11538714B2 (en) * | 2020-05-21 | 2022-12-27 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215552A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | イオン注入装置 |
| JPH09167593A (ja) * | 1995-12-14 | 1997-06-24 | Nissin Electric Co Ltd | イオン注入装置 |
| JPH1027566A (ja) * | 1996-07-10 | 1998-01-27 | Nissin Electric Co Ltd | 基板保持装置 |
| GB9710380D0 (en) | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
| US6489225B1 (en) * | 1999-06-11 | 2002-12-03 | Electron Vision Corporation | Method for controlling dopant profiles and dopant activation by electron beam processing |
| KR100416661B1 (ko) * | 2001-02-20 | 2004-01-31 | 동부전자 주식회사 | 반도체 이온 주입 장비에서의 이온 빔 중성화 시스템 |
| KR20040005402A (ko) * | 2002-07-10 | 2004-01-16 | 삼성전자주식회사 | 이온 주입 설비의 플라즈마 플라드 건 |
| JP2005072521A (ja) * | 2003-08-28 | 2005-03-17 | Hitachi Ltd | プラズマ処理装置 |
| JP3742638B2 (ja) * | 2003-09-19 | 2006-02-08 | アプライド マテリアルズ インコーポレイテッド | エレクトロンフラッド装置及びイオン注入装置 |
| US7038223B2 (en) * | 2004-04-05 | 2006-05-02 | Burle Technologies, Inc. | Controlled charge neutralization of ion-implanted articles |
| KR20060019301A (ko) * | 2004-08-27 | 2006-03-03 | 삼성전자주식회사 | 이온 주입 설비의 플라즈마 플루드 건 필라멘트 인슐레이터 |
| JP4468194B2 (ja) * | 2005-01-28 | 2010-05-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| TWI426541B (zh) * | 2005-06-03 | 2014-02-11 | Axcelis Tech Inc | 用於質量分析器之射束阻擋組件、離子植入系統以及用於防止在離子植入系統中粒子污染之方法 |
| KR20070074199A (ko) * | 2006-01-07 | 2007-07-12 | 삼성전자주식회사 | 이온 주입 장치의 플라즈마 플러드 건 |
| US7476877B2 (en) * | 2006-02-14 | 2009-01-13 | Varian Semiconductor Equipment Associates, Inc. | Wafer charge monitoring |
| US20080084650A1 (en) * | 2006-10-04 | 2008-04-10 | Applied Materials, Inc. | Apparatus and method for substrate clamping in a plasma chamber |
| JP2009238632A (ja) | 2008-03-27 | 2009-10-15 | Fujitsu Microelectronics Ltd | イオン注入装置及び半導体装置の製造方法 |
| US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| JP5781349B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5808706B2 (ja) * | 2012-03-29 | 2015-11-10 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びその制御方法 |
| US9053907B2 (en) * | 2012-04-04 | 2015-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of ion neutralization with multiple-zoned plasma flood gun |
| JP5847745B2 (ja) | 2013-02-26 | 2016-01-27 | 株式会社東芝 | イオン注入装置およびイオン注入装置の状態判定方法 |
| US9916967B2 (en) * | 2013-03-13 | 2018-03-13 | Applied Materials, Inc. | Fast response fluid control system |
| US9417280B2 (en) | 2013-04-29 | 2016-08-16 | Varian Semiconductor Associates, Inc. | System and method for analyzing voltage breakdown in electrostatic chucks |
| US9070538B2 (en) * | 2013-10-25 | 2015-06-30 | Varian Semiconductor Equipment Associates, Inc. | Pinched plasma bridge flood gun for substrate charge neutralization |
| CN104347358A (zh) * | 2014-09-15 | 2015-02-11 | 上海华力微电子有限公司 | 改善器件等离子体损伤的方法 |
-
2016
- 2016-04-18 US US15/131,520 patent/US9824857B2/en active Active
- 2016-12-29 TW TW105143744A patent/TWI722085B/zh active
-
2017
- 2017-01-04 KR KR1020187022750A patent/KR102483421B1/ko active Active
- 2017-01-04 WO PCT/US2017/012112 patent/WO2017123438A1/en not_active Ceased
- 2017-01-04 JP JP2018535852A patent/JP6814218B2/ja active Active
- 2017-01-04 CN CN201780006590.0A patent/CN108463872B/zh active Active
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