JP6814218B2 - 半導体ウェハーの注入用のイオン注入機、装置及びその方法 - Google Patents
半導体ウェハーの注入用のイオン注入機、装置及びその方法 Download PDFInfo
- Publication number
- JP6814218B2 JP6814218B2 JP2018535852A JP2018535852A JP6814218B2 JP 6814218 B2 JP6814218 B2 JP 6814218B2 JP 2018535852 A JP2018535852 A JP 2018535852A JP 2018535852 A JP2018535852 A JP 2018535852A JP 6814218 B2 JP6814218 B2 JP 6814218B2
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- JP
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- Prior art keywords
- current
- clamp
- hbr
- flood gun
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 235000012431 wafers Nutrition 0.000 title description 46
- 239000000758 substrate Substances 0.000 claims description 47
- 230000008859 change Effects 0.000 claims description 29
- 238000002347 injection Methods 0.000 claims description 29
- 239000007924 injection Substances 0.000 claims description 29
- 238000005259 measurement Methods 0.000 claims description 14
- 238000012544 monitoring process Methods 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 2
- 238000001802 infusion Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 56
- 210000002381 plasma Anatomy 0.000 description 31
- 230000008569 process Effects 0.000 description 16
- 238000010884 ion-beam technique Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000979 retarding effect Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30405—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662278950P | 2016-01-14 | 2016-01-14 | |
| US62/278,950 | 2016-01-14 | ||
| US15/131,520 US9824857B2 (en) | 2016-01-14 | 2016-04-18 | Method for implantation of semiconductor wafers having high bulk resistivity |
| US15/131,520 | 2016-04-18 | ||
| PCT/US2017/012112 WO2017123438A1 (en) | 2016-01-14 | 2017-01-04 | Method for implantation of semiconductor wafers having high bulk resistivity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019508840A JP2019508840A (ja) | 2019-03-28 |
| JP2019508840A5 JP2019508840A5 (enExample) | 2020-02-06 |
| JP6814218B2 true JP6814218B2 (ja) | 2021-01-13 |
Family
ID=59311993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018535852A Active JP6814218B2 (ja) | 2016-01-14 | 2017-01-04 | 半導体ウェハーの注入用のイオン注入機、装置及びその方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9824857B2 (enExample) |
| JP (1) | JP6814218B2 (enExample) |
| KR (1) | KR102483421B1 (enExample) |
| CN (1) | CN108463872B (enExample) |
| TW (1) | TWI722085B (enExample) |
| WO (1) | WO2017123438A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3503159B1 (fr) * | 2017-12-20 | 2021-05-05 | The Swatch Group Research and Development Ltd | Procédé d'implantation d'ions sur une surface d'un objet à traiter |
| CN111987030A (zh) * | 2019-05-22 | 2020-11-24 | 芯恩（青岛）集成电路有限公司 | 半导体设备及提高静电吸盘吸附晶圆能力的方法 |
| KR102874792B1 (ko) * | 2020-05-21 | 2025-10-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 프로세싱 방법 |
| US20210366757A1 (en) * | 2020-05-21 | 2021-11-25 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11315819B2 (en) | 2020-05-21 | 2022-04-26 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11875967B2 (en) * | 2020-05-21 | 2024-01-16 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
| US11538714B2 (en) * | 2020-05-21 | 2022-12-27 | Applied Materials, Inc. | System apparatus and method for enhancing electrical clamping of substrates using photo-illumination |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215552A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | イオン注入装置 |
| JPH09167593A (ja) * | 1995-12-14 | 1997-06-24 | Nissin Electric Co Ltd | イオン注入装置 |
| JPH1027566A (ja) * | 1996-07-10 | 1998-01-27 | Nissin Electric Co Ltd | 基板保持装置 |
| GB9710380D0 (en) | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
| US6489225B1 (en) * | 1999-06-11 | 2002-12-03 | Electron Vision Corporation | Method for controlling dopant profiles and dopant activation by electron beam processing |
| KR100416661B1 (ko) * | 2001-02-20 | 2004-01-31 | 동부전자 주식회사 | 반도체 이온 주입 장비에서의 이온 빔 중성화 시스템 |
| KR20040005402A (ko) * | 2002-07-10 | 2004-01-16 | 삼성전자주식회사 | 이온 주입 설비의 플라즈마 플라드 건 |
| JP2005072521A (ja) * | 2003-08-28 | 2005-03-17 | Hitachi Ltd | プラズマ処理装置 |
| JP3742638B2 (ja) * | 2003-09-19 | 2006-02-08 | アプライド マテリアルズ インコーポレイテッド | エレクトロンフラッド装置及びイオン注入装置 |
| US7038223B2 (en) * | 2004-04-05 | 2006-05-02 | Burle Technologies, Inc. | Controlled charge neutralization of ion-implanted articles |
| KR20060019301A (ko) * | 2004-08-27 | 2006-03-03 | 삼성전자주식회사 | 이온 주입 설비의 플라즈마 플루드 건 필라멘트 인슐레이터 |
| JP4468194B2 (ja) * | 2005-01-28 | 2010-05-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| TWI426541B (zh) * | 2005-06-03 | 2014-02-11 | Axcelis Tech Inc | 用於質量分析器之射束阻擋組件、離子植入系統以及用於防止在離子植入系統中粒子污染之方法 |
| KR20070074199A (ko) * | 2006-01-07 | 2007-07-12 | 삼성전자주식회사 | 이온 주입 장치의 플라즈마 플러드 건 |
| US7476877B2 (en) * | 2006-02-14 | 2009-01-13 | Varian Semiconductor Equipment Associates, Inc. | Wafer charge monitoring |
| US20080084650A1 (en) * | 2006-10-04 | 2008-04-10 | Applied Materials, Inc. | Apparatus and method for substrate clamping in a plasma chamber |
| JP2009238632A (ja) | 2008-03-27 | 2009-10-15 | Fujitsu Microelectronics Ltd | イオン注入装置及び半導体装置の製造方法 |
| US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| JP5781349B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5808706B2 (ja) * | 2012-03-29 | 2015-11-10 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置及びその制御方法 |
| US9053907B2 (en) * | 2012-04-04 | 2015-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of ion neutralization with multiple-zoned plasma flood gun |
| JP5847745B2 (ja) | 2013-02-26 | 2016-01-27 | 株式会社東芝 | イオン注入装置およびイオン注入装置の状態判定方法 |
| US9916967B2 (en) * | 2013-03-13 | 2018-03-13 | Applied Materials, Inc. | Fast response fluid control system |
| US9417280B2 (en) | 2013-04-29 | 2016-08-16 | Varian Semiconductor Associates, Inc. | System and method for analyzing voltage breakdown in electrostatic chucks |
| US9070538B2 (en) * | 2013-10-25 | 2015-06-30 | Varian Semiconductor Equipment Associates, Inc. | Pinched plasma bridge flood gun for substrate charge neutralization |
| CN104347358A (zh) * | 2014-09-15 | 2015-02-11 | 上海华力微电子有限公司 | 改善器件等离子体损伤的方法 |
-
2016
- 2016-04-18 US US15/131,520 patent/US9824857B2/en active Active
- 2016-12-29 TW TW105143744A patent/TWI722085B/zh active
-
2017
- 2017-01-04 KR KR1020187022750A patent/KR102483421B1/ko active Active
- 2017-01-04 WO PCT/US2017/012112 patent/WO2017123438A1/en not_active Ceased
- 2017-01-04 JP JP2018535852A patent/JP6814218B2/ja active Active
- 2017-01-04 CN CN201780006590.0A patent/CN108463872B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019508840A (ja) | 2019-03-28 |
| CN108463872A (zh) | 2018-08-28 |
| TWI722085B (zh) | 2021-03-21 |
| US20170207063A1 (en) | 2017-07-20 |
| KR20180095711A (ko) | 2018-08-27 |
| TW201732862A (zh) | 2017-09-16 |
| US9824857B2 (en) | 2017-11-21 |
| KR102483421B1 (ko) | 2022-12-30 |
| CN108463872B (zh) | 2022-10-14 |
| WO2017123438A1 (en) | 2017-07-20 |
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