TWI719807B - 腔室壓力控制方法及裝置、半導體設備 - Google Patents

腔室壓力控制方法及裝置、半導體設備 Download PDF

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Publication number
TWI719807B
TWI719807B TW109101972A TW109101972A TWI719807B TW I719807 B TWI719807 B TW I719807B TW 109101972 A TW109101972 A TW 109101972A TW 109101972 A TW109101972 A TW 109101972A TW I719807 B TWI719807 B TW I719807B
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Taiwan
Prior art keywords
pressure
chamber
value
execution unit
position parameter
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TW109101972A
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English (en)
Chinese (zh)
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TW202040302A (zh
Inventor
鄭文寧
趙迪
陳正堂
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大陸商北京七星華創流量計有限公司
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Control Of Fluid Pressure (AREA)
  • Feedback Control In General (AREA)
TW109101972A 2019-04-18 2020-01-20 腔室壓力控制方法及裝置、半導體設備 TWI719807B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910314577.2A CN111831022B (zh) 2019-04-18 2019-04-18 腔室压力控制方法及装置、半导体设备
CN201910314577.2 2019-04-18

Publications (2)

Publication Number Publication Date
TW202040302A TW202040302A (zh) 2020-11-01
TWI719807B true TWI719807B (zh) 2021-02-21

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TW109101972A TWI719807B (zh) 2019-04-18 2020-01-20 腔室壓力控制方法及裝置、半導體設備

Country Status (4)

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JP (1) JP7041697B2 (ja)
CN (1) CN111831022B (ja)
TW (1) TWI719807B (ja)
WO (1) WO2020211440A1 (ja)

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CN112695297B (zh) * 2020-11-24 2022-12-09 北京北方华创微电子装备有限公司 一种半导体工艺中腔室压力的控制方法
CN114964349A (zh) * 2021-02-19 2022-08-30 中国科学院微电子研究所 一种腔室压力测量装置、测量方法及半导体制造设备
CN113097108A (zh) * 2021-03-31 2021-07-09 北京北方华创微电子装备有限公司 半导体工艺的控制方法和半导体工艺设备
CN113406881B (zh) * 2021-04-12 2023-09-08 北京北方华创微电子装备有限公司 半导体热处理设备及其装卸载腔室中氧含量的控制方法
CN113192866A (zh) * 2021-04-16 2021-07-30 北京北方华创微电子装备有限公司 半导体工艺配方中工艺参数值匹配方法及半导体工艺设备
CN113515095A (zh) * 2021-04-16 2021-10-19 北京北方华创微电子装备有限公司 多个工艺腔室压力的控制方法及半导体工艺设备
CN113110632B (zh) * 2021-05-10 2023-09-05 北京七星华创流量计有限公司 压力控制方法、压力控制装置及半导体工艺设备
CN113805619B (zh) * 2021-09-24 2024-05-17 北京北方华创微电子装备有限公司 压力控制系统及控制方法
CN113900457B (zh) * 2021-09-29 2024-03-19 西安北方华创微电子装备有限公司 压力调零方法和半导体工艺设备
CN113900455B (zh) * 2021-11-09 2023-11-07 北京七星华创流量计有限公司 半导体工艺设备及其质量流量控制器、流体流量控制方法
CN114277617B (zh) * 2021-12-31 2024-01-30 珠海格力智能装备有限公司 成型模具的冷压控制方法
CN115145319A (zh) * 2022-05-30 2022-10-04 北京七星华创流量计有限公司 压力控制方法、装置及半导体工艺设备
CN117251002B (zh) * 2023-11-20 2024-01-30 常州铭赛机器人科技股份有限公司 散热盖贴装工艺中的压力实时控制方法

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US20110301822A1 (en) * 2009-02-16 2011-12-08 Snecma Method and system for controlling a gas turbine and a gas turbine including such a system
TW201131007A (en) * 2009-08-19 2011-09-16 Tokyo Electron Ltd Pressure control apparatus, pressure control method and substrate processing apparatus
TW201139728A (en) * 2010-01-15 2011-11-16 Ckd Corp Vacuum control system and vacuum control method
TW201333260A (zh) * 2010-01-15 2013-08-16 Ckd Corp 真空控制系統及真空控制方法
CN103309369A (zh) * 2012-03-09 2013-09-18 上海微电子装备有限公司 光学系统内部腔室精密气体控制方法及其装置
CN107452587A (zh) * 2016-06-01 2017-12-08 北京北方华创微电子装备有限公司 一种传输腔室的压力控制方法及控制系统
CN106197902A (zh) * 2016-07-22 2016-12-07 华中科技大学 一种气密检测装置及其伺服控制方法
US20180082871A1 (en) * 2016-09-22 2018-03-22 Globalfoundries Inc. Gas flow process control system and method using crystal microbalance(s)
JP2019011884A (ja) * 2017-06-29 2019-01-24 ダイダン株式会社 室圧制御システム
CN107881306A (zh) * 2017-11-24 2018-04-06 北京七星华创磁电科技有限公司 一种压力控制系统及控制方法

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Publication number Publication date
TW202040302A (zh) 2020-11-01
CN111831022A (zh) 2020-10-27
JP2021524068A (ja) 2021-09-09
CN111831022B (zh) 2022-03-18
WO2020211440A1 (zh) 2020-10-22
JP7041697B2 (ja) 2022-03-24

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