TWI718458B - 處理液吐出配管以及基板處理裝置 - Google Patents
處理液吐出配管以及基板處理裝置 Download PDFInfo
- Publication number
- TWI718458B TWI718458B TW107147050A TW107147050A TWI718458B TW I718458 B TWI718458 B TW I718458B TW 107147050 A TW107147050 A TW 107147050A TW 107147050 A TW107147050 A TW 107147050A TW I718458 B TWI718458 B TW I718458B
- Authority
- TW
- Taiwan
- Prior art keywords
- flow path
- processing liquid
- substrate
- processing
- hydrophilic
- Prior art date
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- 239000007788 liquid Substances 0.000 title claims abstract description 224
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 27
- 230000007246 mechanism Effects 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 230000002209 hydrophobic effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 13
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 12
- 230000032258 transport Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004590 computer program Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-013772 | 2018-01-30 | ||
JP2018013772A JP7000177B2 (ja) | 2018-01-30 | 2018-01-30 | 処理液吐出配管および基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201933436A TW201933436A (zh) | 2019-08-16 |
TWI718458B true TWI718458B (zh) | 2021-02-11 |
Family
ID=67479621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107147050A TWI718458B (zh) | 2018-01-30 | 2018-12-26 | 處理液吐出配管以及基板處理裝置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7000177B2 (ko) |
KR (1) | KR102377383B1 (ko) |
CN (1) | CN111630634B (ko) |
TW (1) | TWI718458B (ko) |
WO (1) | WO2019150716A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102666437B1 (ko) * | 2021-09-08 | 2024-05-20 | 세메스 주식회사 | 액 공급 장치 및 기판 처리 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW548143B (en) * | 2001-06-29 | 2003-08-21 | Dainippon Screen Mfg | Substrate application apparatus, liquid supply apparatus and method of manufacturing nozzle |
TW201419397A (zh) * | 2012-09-27 | 2014-05-16 | Dainippon Screen Mfg | 處理液供給裝置,基板處理裝置,處理液供給方法,基板處理方法,處理液處理裝置及處理液處理方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10256116A (ja) | 1997-03-10 | 1998-09-25 | Dainippon Screen Mfg Co Ltd | 基板処理装置の処理液供給ノズル |
JP4198219B2 (ja) * | 1997-11-12 | 2008-12-17 | 大日本スクリーン製造株式会社 | 現像装置 |
JP4444474B2 (ja) * | 2000-08-30 | 2010-03-31 | 株式会社日立製作所 | 板状基板の処理装置及び処理方法 |
JP4780789B2 (ja) * | 2007-02-19 | 2011-09-28 | 東京エレクトロン株式会社 | 処理液供給装置 |
JP2008277748A (ja) * | 2007-03-30 | 2008-11-13 | Renesas Technology Corp | レジストパターンの形成方法とその方法により製造した半導体デバイス |
JP5276559B2 (ja) * | 2009-09-24 | 2013-08-28 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP6319941B2 (ja) * | 2013-03-15 | 2018-05-09 | 株式会社Screenホールディングス | 基板処理装置および吐出ヘッド待機方法 |
JP6216200B2 (ja) * | 2013-09-30 | 2017-10-18 | 株式会社Screenホールディングス | 基板処理装置 |
JP6385864B2 (ja) * | 2015-03-18 | 2018-09-05 | 株式会社東芝 | ノズルおよび液体供給装置 |
-
2018
- 2018-01-30 JP JP2018013772A patent/JP7000177B2/ja active Active
- 2018-11-20 KR KR1020207020672A patent/KR102377383B1/ko active IP Right Grant
- 2018-11-20 CN CN201880086735.7A patent/CN111630634B/zh active Active
- 2018-11-20 WO PCT/JP2018/042872 patent/WO2019150716A1/ja active Application Filing
- 2018-12-26 TW TW107147050A patent/TWI718458B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW548143B (en) * | 2001-06-29 | 2003-08-21 | Dainippon Screen Mfg | Substrate application apparatus, liquid supply apparatus and method of manufacturing nozzle |
TW201419397A (zh) * | 2012-09-27 | 2014-05-16 | Dainippon Screen Mfg | 處理液供給裝置,基板處理裝置,處理液供給方法,基板處理方法,處理液處理裝置及處理液處理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7000177B2 (ja) | 2022-01-19 |
KR102377383B1 (ko) | 2022-03-21 |
KR20200096643A (ko) | 2020-08-12 |
CN111630634A (zh) | 2020-09-04 |
TW201933436A (zh) | 2019-08-16 |
CN111630634B (zh) | 2024-08-20 |
JP2019134023A (ja) | 2019-08-08 |
WO2019150716A1 (ja) | 2019-08-08 |
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