TWI718458B - 處理液吐出配管以及基板處理裝置 - Google Patents

處理液吐出配管以及基板處理裝置 Download PDF

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Publication number
TWI718458B
TWI718458B TW107147050A TW107147050A TWI718458B TW I718458 B TWI718458 B TW I718458B TW 107147050 A TW107147050 A TW 107147050A TW 107147050 A TW107147050 A TW 107147050A TW I718458 B TWI718458 B TW I718458B
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TW
Taiwan
Prior art keywords
flow path
processing liquid
substrate
processing
hydrophilic
Prior art date
Application number
TW107147050A
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English (en)
Chinese (zh)
Other versions
TW201933436A (zh
Inventor
竹松佑介
温井宏樹
岩川裕
東克栄
菅原雄二
Original Assignee
日商斯庫林集團股份有限公司
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Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201933436A publication Critical patent/TW201933436A/zh
Application granted granted Critical
Publication of TWI718458B publication Critical patent/TWI718458B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW107147050A 2018-01-30 2018-12-26 處理液吐出配管以及基板處理裝置 TWI718458B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-013772 2018-01-30
JP2018013772A JP7000177B2 (ja) 2018-01-30 2018-01-30 処理液吐出配管および基板処理装置

Publications (2)

Publication Number Publication Date
TW201933436A TW201933436A (zh) 2019-08-16
TWI718458B true TWI718458B (zh) 2021-02-11

Family

ID=67479621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147050A TWI718458B (zh) 2018-01-30 2018-12-26 處理液吐出配管以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP7000177B2 (ja)
KR (1) KR102377383B1 (ja)
CN (1) CN111630634A (ja)
TW (1) TWI718458B (ja)
WO (1) WO2019150716A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7441906B2 (ja) 2021-09-08 2024-03-01 セメス カンパニー，リミテッド 液供給装置及び基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW548143B (en) * 2001-06-29 2003-08-21 Dainippon Screen Mfg Substrate application apparatus, liquid supply apparatus and method of manufacturing nozzle
TW201419397A (zh) * 2012-09-27 2014-05-16 Dainippon Screen Mfg 處理液供給裝置，基板處理裝置，處理液供給方法，基板處理方法，處理液處理裝置及處理液處理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256116A (ja) 1997-03-10 1998-09-25 Dainippon Screen Mfg Co Ltd 基板処理装置の処理液供給ノズル
JP4198219B2 (ja) * 1997-11-12 2008-12-17 大日本スクリーン製造株式会社 現像装置
JP4780789B2 (ja) 2007-02-19 2011-09-28 東京エレクトロン株式会社 処理液供給装置
JP6216200B2 (ja) 2013-09-30 2017-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6385864B2 (ja) 2015-03-18 2018-09-05 株式会社東芝 ノズルおよび液体供給装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW548143B (en) * 2001-06-29 2003-08-21 Dainippon Screen Mfg Substrate application apparatus, liquid supply apparatus and method of manufacturing nozzle
TW201419397A (zh) * 2012-09-27 2014-05-16 Dainippon Screen Mfg 處理液供給裝置，基板處理裝置，處理液供給方法，基板處理方法，處理液處理裝置及處理液處理方法

Also Published As

Publication number Publication date
TW201933436A (zh) 2019-08-16
JP2019134023A (ja) 2019-08-08
KR102377383B1 (ko) 2022-03-21
KR20200096643A (ko) 2020-08-12
WO2019150716A1 (ja) 2019-08-08
CN111630634A (zh) 2020-09-04
JP7000177B2 (ja) 2022-01-19

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