TWI718371B - 受光裝置及受光裝置之信號讀出方法 - Google Patents

受光裝置及受光裝置之信號讀出方法 Download PDF

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Publication number
TWI718371B
TWI718371B TW107114839A TW107114839A TWI718371B TW I718371 B TWI718371 B TW I718371B TW 107114839 A TW107114839 A TW 107114839A TW 107114839 A TW107114839 A TW 107114839A TW I718371 B TWI718371 B TW I718371B
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Taiwan
Prior art keywords
light
capacitive element
amount
receiving
aforementioned
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TW107114839A
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English (en)
Chinese (zh)
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TW201904046A (zh
Inventor
須川成利
黒田理人
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國立大學法人東北大學
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW107114839A 2017-05-28 2018-05-02 受光裝置及受光裝置之信號讀出方法 TWI718371B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-105134 2017-05-28
JP2017105134 2017-05-28

Publications (2)

Publication Number Publication Date
TW201904046A TW201904046A (zh) 2019-01-16
TWI718371B true TWI718371B (zh) 2021-02-11

Family

ID=64455343

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107114839A TWI718371B (zh) 2017-05-28 2018-05-02 受光裝置及受光裝置之信號讀出方法

Country Status (6)

Country Link
US (1) US11343458B2 (ja)
JP (1) JP6671715B2 (ja)
KR (1) KR102276181B1 (ja)
CN (1) CN110679141B (ja)
TW (1) TWI718371B (ja)
WO (1) WO2018221074A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7520498B2 (ja) * 2019-12-02 2024-07-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US11863567B2 (en) * 2020-02-04 2024-01-02 Fastly, Inc. Management of bot detection in a content delivery network
CN112071277A (zh) * 2020-09-03 2020-12-11 深圳市华星光电半导体显示技术有限公司 一种驱动电路及其驱动方法

Citations (6)

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JP2006060569A (ja) * 2004-08-20 2006-03-02 Pentax Corp 撮像装置
JP2007324984A (ja) * 2006-06-01 2007-12-13 Matsushita Electric Ind Co Ltd 固体撮像装置
TW200836152A (en) * 2006-12-27 2008-09-01 Sony Corp Pixel circuit, display, and method for driving pixel circuit
TW201233165A (en) * 2010-12-17 2012-08-01 Omnivision Tech Inc Image sensor having supplemental capacitive coupling node
TW201303830A (zh) * 2011-07-07 2013-01-16 Sony Corp 像素電路、顯示裝置、電子設備以及驅動像素電路的方法
TW201447348A (zh) * 2013-02-27 2014-12-16 Semiconductor Energy Lab 成像裝置

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JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP2008098971A (ja) * 2006-10-12 2008-04-24 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2008205638A (ja) * 2007-02-16 2008-09-04 Texas Instr Japan Ltd 固体撮像装置及びその動作方法
JP2008258885A (ja) 2007-04-04 2008-10-23 Texas Instr Japan Ltd 撮像装置および撮像装置の駆動方法
JP4935486B2 (ja) * 2007-04-23 2012-05-23 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像装置の信号処理方法および撮像装置
JP2008300898A (ja) * 2007-05-29 2008-12-11 Olympus Corp 固体撮像装置とそれを用いた撮像システム
JP4618342B2 (ja) 2008-05-20 2011-01-26 日本テキサス・インスツルメンツ株式会社 固体撮像装置
JP2010226679A (ja) * 2009-03-25 2010-10-07 Toshiba Corp 固体撮像装置
US9184911B2 (en) 2014-04-08 2015-11-10 Cloudflare, Inc. Secure session capability using public-key cryptography without access to the private key
CN103929600B (zh) * 2014-04-30 2017-03-15 北京思比科微电子技术股份有限公司 高灵敏度cmos图像传感器共享型像素结构
CN107112334B (zh) 2014-11-17 2018-09-04 国立大学法人东北大学 光传感器及其信号读出方法、以及固体摄像装置及其信号读出方法
US10373991B2 (en) * 2015-08-19 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060569A (ja) * 2004-08-20 2006-03-02 Pentax Corp 撮像装置
JP2007324984A (ja) * 2006-06-01 2007-12-13 Matsushita Electric Ind Co Ltd 固体撮像装置
TW200836152A (en) * 2006-12-27 2008-09-01 Sony Corp Pixel circuit, display, and method for driving pixel circuit
TW201233165A (en) * 2010-12-17 2012-08-01 Omnivision Tech Inc Image sensor having supplemental capacitive coupling node
TW201603578A (zh) * 2010-12-17 2016-01-16 豪威科技股份有限公司 具有補充電容性耦合節點之影像感測器
TW201303830A (zh) * 2011-07-07 2013-01-16 Sony Corp 像素電路、顯示裝置、電子設備以及驅動像素電路的方法
TW201447348A (zh) * 2013-02-27 2014-12-16 Semiconductor Energy Lab 成像裝置

Also Published As

Publication number Publication date
KR102276181B1 (ko) 2021-07-12
US11343458B2 (en) 2022-05-24
KR20200007870A (ko) 2020-01-22
CN110679141B (zh) 2022-02-15
CN110679141A (zh) 2020-01-10
TW201904046A (zh) 2019-01-16
JPWO2018221074A1 (ja) 2020-02-06
WO2018221074A1 (ja) 2018-12-06
JP6671715B2 (ja) 2020-03-25
US20200177831A1 (en) 2020-06-04

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