TWI715582B - 用於疊對測量之形貌相位控制 - Google Patents
用於疊對測量之形貌相位控制 Download PDFInfo
- Publication number
- TWI715582B TWI715582B TW105115575A TW105115575A TWI715582B TW I715582 B TWI715582 B TW I715582B TW 105115575 A TW105115575 A TW 105115575A TW 105115575 A TW105115575 A TW 105115575A TW I715582 B TWI715582 B TW I715582B
- Authority
- TW
- Taiwan
- Prior art keywords
- measurement
- target
- imaging
- phase
- optical system
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/32—Fiducial marks and measuring scales within the optical system
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
- G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N2021/653—Coherent methods [CARS]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562163783P | 2015-05-19 | 2015-05-19 | |
| US62/163,783 | 2015-05-19 | ||
| US201562222724P | 2015-09-23 | 2015-09-23 | |
| US62/222,724 | 2015-09-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201712435A TW201712435A (zh) | 2017-04-01 |
| TWI715582B true TWI715582B (zh) | 2021-01-11 |
Family
ID=57320785
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105115575A TWI715582B (zh) | 2015-05-19 | 2016-05-19 | 用於疊對測量之形貌相位控制 |
| TW109145523A TWI752764B (zh) | 2015-05-19 | 2016-05-19 | 用於疊對測量之形貌相位控制 |
| TW109145524A TWI755987B (zh) | 2015-05-19 | 2016-05-19 | 具有用於疊對測量之形貌相位控制之光學系統 |
| TW109145525A TWI760984B (zh) | 2015-05-19 | 2016-05-19 | 用於疊對測量之方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109145523A TWI752764B (zh) | 2015-05-19 | 2016-05-19 | 用於疊對測量之形貌相位控制 |
| TW109145524A TWI755987B (zh) | 2015-05-19 | 2016-05-19 | 具有用於疊對測量之形貌相位控制之光學系統 |
| TW109145525A TWI760984B (zh) | 2015-05-19 | 2016-05-19 | 用於疊對測量之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US10520832B2 (https=) |
| JP (4) | JP6879939B2 (https=) |
| KR (4) | KR102678955B1 (https=) |
| CN (4) | CN112859542A (https=) |
| SG (3) | SG10201912816UA (https=) |
| TW (4) | TWI715582B (https=) |
| WO (1) | WO2016187468A1 (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI715582B (zh) | 2015-05-19 | 2021-01-11 | 美商克萊譚克公司 | 用於疊對測量之形貌相位控制 |
| US9989806B2 (en) * | 2015-09-10 | 2018-06-05 | Samsung Display Co., Ltd. | Color conversion panel and display device including the same |
| JP6789295B2 (ja) * | 2015-12-08 | 2020-11-25 | ケーエルエー コーポレイション | 偏光ターゲットおよび偏光照明を用いた回折光の振幅および位相の制御 |
| JP7179742B2 (ja) * | 2017-02-10 | 2022-11-29 | ケーエルエー コーポレイション | 散乱計測オーバーレイターゲット及び方法 |
| WO2018226215A1 (en) * | 2017-06-06 | 2018-12-13 | Kla-Tencor Corporation | Reticle optimization algorithms and optimal target design |
| EP3454123A1 (en) * | 2017-09-06 | 2019-03-13 | ASML Netherlands B.V. | Metrology method and apparatus |
| EP3499312A1 (en) * | 2017-12-15 | 2019-06-19 | ASML Netherlands B.V. | Metrology apparatus and a method of determining a characteristic of interest |
| IL304744B2 (en) * | 2017-11-07 | 2024-09-01 | Asml Netherlands Bv | Metrology system and method for determining a characteristic of an area of interest |
| US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
| EP3521929A1 (en) | 2018-02-02 | 2019-08-07 | ASML Netherlands B.V. | Method of determining an optimal focus height for a metrology apparatus |
| CN112005157B (zh) * | 2018-02-27 | 2023-03-03 | Asml荷兰有限公司 | 用于确定衬底上的一个或更多个结构的特性的量测设备和方法 |
| IL277294B2 (en) * | 2018-03-19 | 2024-05-01 | Kla Corp | Overlay measurement using multiple wavelengths |
| US10677588B2 (en) | 2018-04-09 | 2020-06-09 | Kla-Tencor Corporation | Localized telecentricity and focus optimization for overlay metrology |
| WO2019236084A1 (en) * | 2018-06-07 | 2019-12-12 | Kla-Tencor Corporation | Overlay measurement using phase and amplitude modeling |
| US11281111B2 (en) | 2018-08-28 | 2022-03-22 | Kla-Tencor Corporation | Off-axis illumination overlay measurement using two-diffracted orders imaging |
| US12130246B2 (en) * | 2018-12-31 | 2024-10-29 | Asml Netherlands B.V. | Method for overlay metrology and apparatus thereof |
| WO2020168142A1 (en) | 2019-02-14 | 2020-08-20 | Kla Corporation | System and method for measuring misregistration of semiconductor device wafers utilizing induced topography |
| WO2020190318A1 (en) * | 2019-03-21 | 2020-09-24 | Kla Corporation | Parameter-stable misregistration measurement amelioration in semiconductor devices |
| US11703460B2 (en) * | 2019-07-09 | 2023-07-18 | Kla Corporation | Methods and systems for optical surface defect material characterization |
| US11914290B2 (en) | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11346657B2 (en) * | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
| KR102825815B1 (ko) * | 2020-06-18 | 2025-06-27 | 삼성전자주식회사 | 스루-포커스 이미지 기반 계측 장치, 그것의 동작 방법, 및 그 동작을 실행하는 컴퓨팅 장치 |
| CN112465694B (zh) * | 2020-11-27 | 2024-10-15 | 中国科学院西安光学精密机械研究所 | 基于相位变化的医学图像数据增广方法 |
| US11713959B2 (en) * | 2021-03-17 | 2023-08-01 | Kla Corporation | Overlay metrology using spectroscopic phase |
| CN117413221A (zh) * | 2021-06-09 | 2024-01-16 | Asml荷兰有限公司 | 用于使用具有孔径变迹的结构照射进行掩模版粒子检测的检查系统 |
| CN113467033A (zh) * | 2021-06-24 | 2021-10-01 | 南昌欧菲光电技术有限公司 | 一种摄像头模组及其透镜的定位方法 |
| CN113777731A (zh) * | 2021-08-11 | 2021-12-10 | 中国工程物理研究院应用电子学研究所 | 一种共轴反转环型连续变密度衰减器装置及其工作方法 |
| CN113985711B (zh) * | 2021-10-28 | 2024-02-02 | 无锡卓海科技股份有限公司 | 一种套刻测量装置 |
| KR102874693B1 (ko) * | 2023-08-17 | 2025-10-29 | (주) 오로스테크놀로지 | 이미지 기반 오버레이 시스템에서 위상 이미지 획득 장치 및 방법 |
| US12411420B2 (en) * | 2023-09-29 | 2025-09-09 | Kla Corporation | Small in-die target design for overlay measurement |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001307975A (ja) * | 2000-02-18 | 2001-11-02 | Nikon Corp | 荷電粒子線露光装置及び半導体デバイスの製造方法 |
| US20020123168A1 (en) * | 2000-12-01 | 2002-09-05 | Nikon Corporation | Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system |
| US20040233440A1 (en) * | 2003-02-22 | 2004-11-25 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| CN101699265A (zh) * | 2009-10-28 | 2010-04-28 | 上海理工大学 | 动态偏振光散射颗粒测量装置及测量方法 |
| US20140111791A1 (en) * | 2012-10-19 | 2014-04-24 | Kla-Tencor Corporation | Phase characterization of targets |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4644172A (en) * | 1984-02-22 | 1987-02-17 | Kla Instruments Corporation | Electronic control of an automatic wafer inspection system |
| US5666197A (en) * | 1996-08-21 | 1997-09-09 | Polaroid Corporation | Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography |
| JPH10284370A (ja) * | 1997-04-03 | 1998-10-23 | Nikon Corp | 焦点位置検出装置及び該装置を備えた投影露光装置 |
| US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US7072502B2 (en) | 2001-06-07 | 2006-07-04 | Applied Materials, Inc. | Alternating phase-shift mask inspection method and apparatus |
| US6794671B2 (en) * | 2002-07-17 | 2004-09-21 | Particle Sizing Systems, Inc. | Sensors and methods for high-sensitivity optical particle counting and sizing |
| WO2004053426A1 (en) * | 2002-12-05 | 2004-06-24 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7230704B2 (en) | 2003-06-06 | 2007-06-12 | Tokyo Electron Limited | Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay |
| JP4734261B2 (ja) * | 2004-02-18 | 2011-07-27 | ケーエルエー−テンカー コーポレイション | 連続変化するオフセットマークと、オーバレイ決定方法 |
| DE102005006724A1 (de) * | 2004-10-20 | 2006-08-10 | Universität Stuttgart | Verfahren und Anordung zur konfokalen Spektral-Interferometrie, insbesondere auch zur optischen Kohärenz-Tomografie (OCT)und/oder optischen Kohärenz-Mikroskopie (OCM)von biologischen und technischen Objekten |
| US20060164649A1 (en) | 2005-01-24 | 2006-07-27 | Eliezer Rosengaus | Multi-spectral techniques for defocus detection |
| DE102006016131A1 (de) * | 2005-09-22 | 2007-03-29 | Robert Bosch Gmbh | Interferometrische Messvorrichtung |
| JP2007140212A (ja) * | 2005-11-18 | 2007-06-07 | Toshiba Corp | フォトマスク及び半導体装置の製造方法 |
| WO2007084849A1 (en) * | 2006-01-18 | 2007-07-26 | The General Hospital Corporation | System and methods for generating data using one or more endoscopic microscopy techniques |
| US7408642B1 (en) * | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
| DE102006021557B3 (de) * | 2006-05-08 | 2007-07-12 | Carl Mahr Holding Gmbh | Vorrichtung und Verfahren zur kombinierten interferometrischen und abbildungsbasierten Geometrieerfassung, insbesondere in der Mikrosystemtechnik |
| US7528941B2 (en) * | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
| TW200905157A (en) * | 2007-04-12 | 2009-02-01 | Nikon Corp | Measuring method, exposure method, and device fabricating method |
| JP4966724B2 (ja) * | 2007-04-20 | 2012-07-04 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US7602491B2 (en) * | 2007-04-26 | 2009-10-13 | Kla- Tencor Corporation | Optical gain approach for enhancement of overlay and alignment systems performance |
| US7869022B2 (en) * | 2007-07-18 | 2011-01-11 | Asml Netherlands B.V. | Inspection method and apparatus lithographic apparatus, lithographic processing cell, device manufacturing method and distance measuring system |
| US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
| US20090034071A1 (en) * | 2007-07-31 | 2009-02-05 | Dean Jennings | Method for partitioning and incoherently summing a coherent beam |
| US9239455B2 (en) * | 2007-12-31 | 2016-01-19 | Stc.Unm | Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy |
| NL1036857A1 (nl) | 2008-04-21 | 2009-10-22 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| JP5319978B2 (ja) * | 2008-07-28 | 2013-10-16 | 株式会社日立メディアエレクトロニクス | 光ピックアップ装置、光ディスク装置および回折格子 |
| TWI427431B (zh) * | 2008-09-22 | 2014-02-21 | Asml荷蘭公司 | 微影裝置、可程式化圖案化器件及微影方法 |
| JP5361322B2 (ja) * | 2008-10-14 | 2013-12-04 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| DE102009044151B4 (de) * | 2009-05-19 | 2012-03-29 | Kla-Tencor Mie Gmbh | Vorrichtung zur optischen Waferinspektion |
| NL2005162A (en) * | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
| US8896832B2 (en) * | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
| JP6008851B2 (ja) | 2010-07-19 | 2016-10-19 | エーエスエムエル ネザーランズ ビー.ブイ. | オーバレイ誤差を決定する方法及び装置 |
| US9927718B2 (en) * | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US9007584B2 (en) * | 2010-12-27 | 2015-04-14 | Nanometrics Incorporated | Simultaneous measurement of multiple overlay errors using diffraction based overlay |
| WO2012109348A1 (en) * | 2011-02-10 | 2012-08-16 | Kla-Tencor Corporation | Structured illumination for contrast enhancement in overlay metrology |
| US20120224183A1 (en) * | 2011-03-02 | 2012-09-06 | Zygo Corporation | Interferometric metrology of surfaces, films and underresolved structures |
| US9645502B2 (en) * | 2011-04-08 | 2017-05-09 | Asml Netherlands B.V. | Lithographic apparatus, programmable patterning device and lithographic method |
| US8582114B2 (en) | 2011-08-15 | 2013-11-12 | Kla-Tencor Corporation | Overlay metrology by pupil phase analysis |
| EP2841875A4 (en) * | 2012-04-23 | 2016-01-20 | Univ Ben Gurion | HIGH-RESOLUTION OPTICAL FULL-FIELD COHERENCE TOMOGRAPHY WITH GENUINE SPECTROSCOPIC DOUBLE MODE USING LIQUID CRYSTAL DEVICES |
| EP2865003A1 (en) | 2012-06-26 | 2015-04-29 | Kla-Tencor Corporation | Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology |
| US8913237B2 (en) * | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
| US9329033B2 (en) | 2012-09-05 | 2016-05-03 | Kla-Tencor Corporation | Method for estimating and correcting misregistration target inaccuracy |
| WO2014062972A1 (en) * | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| US9875946B2 (en) * | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
| US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
| CN103411557B (zh) * | 2013-08-15 | 2016-02-03 | 哈尔滨工业大学 | 阵列照明的角谱扫描准共焦环形微结构测量装置与方法 |
| KR102221751B1 (ko) * | 2014-02-03 | 2021-03-03 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법 |
| CN106030414B (zh) * | 2014-02-21 | 2018-10-09 | Asml荷兰有限公司 | 目标布置的优化和相关的目标 |
| KR102345196B1 (ko) * | 2014-04-07 | 2021-12-29 | 노바 메주어링 인스트루먼츠 엘티디. | 광학 위상 측정 방법 및 시스템 |
| US20150355098A1 (en) * | 2014-05-06 | 2015-12-10 | California Institute Of Technology | Rotating scattering plane based nonlinear optical spectrometer to study the crystallographic and electronic symmetries of crystals |
| SG11201703585RA (en) | 2014-11-25 | 2017-06-29 | Kla Tencor Corp | Analyzing and utilizing landscapes |
| TWI715582B (zh) * | 2015-05-19 | 2021-01-11 | 美商克萊譚克公司 | 用於疊對測量之形貌相位控制 |
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2016
- 2016-05-19 TW TW105115575A patent/TWI715582B/zh active
- 2016-05-19 US US15/114,175 patent/US10520832B2/en active Active
- 2016-05-19 TW TW109145523A patent/TWI752764B/zh active
- 2016-05-19 CN CN202110100983.6A patent/CN112859542A/zh active Pending
- 2016-05-19 CN CN202110100981.7A patent/CN112859541A/zh active Pending
- 2016-05-19 SG SG10201912816UA patent/SG10201912816UA/en unknown
- 2016-05-19 KR KR1020217038906A patent/KR102678955B1/ko active Active
- 2016-05-19 TW TW109145524A patent/TWI755987B/zh active
- 2016-05-19 KR KR1020217038903A patent/KR102665579B1/ko active Active
- 2016-05-19 CN CN202110100880.XA patent/CN112859540B/zh active Active
- 2016-05-19 SG SG10201912822UA patent/SG10201912822UA/en unknown
- 2016-05-19 CN CN201680028226.XA patent/CN107636538B/zh active Active
- 2016-05-19 TW TW109145525A patent/TWI760984B/zh active
- 2016-05-19 JP JP2017560538A patent/JP6879939B2/ja active Active
- 2016-05-19 SG SG10201912818WA patent/SG10201912818WA/en unknown
- 2016-05-19 KR KR1020217038910A patent/KR102607646B1/ko active Active
- 2016-05-19 KR KR1020177036236A patent/KR102334168B1/ko active Active
- 2016-05-19 WO PCT/US2016/033353 patent/WO2016187468A1/en not_active Ceased
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2019
- 2019-11-03 US US16/672,475 patent/US20200142321A1/en not_active Abandoned
- 2019-11-03 US US16/672,483 patent/US11314173B2/en active Active
- 2019-11-03 US US16/672,480 patent/US20200142322A1/en not_active Abandoned
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2021
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001307975A (ja) * | 2000-02-18 | 2001-11-02 | Nikon Corp | 荷電粒子線露光装置及び半導体デバイスの製造方法 |
| US20020123168A1 (en) * | 2000-12-01 | 2002-09-05 | Nikon Corporation | Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system |
| US20040233440A1 (en) * | 2003-02-22 | 2004-11-25 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| CN101699265A (zh) * | 2009-10-28 | 2010-04-28 | 上海理工大学 | 动态偏振光散射颗粒测量装置及测量方法 |
| US20140111791A1 (en) * | 2012-10-19 | 2014-04-24 | Kla-Tencor Corporation | Phase characterization of targets |
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