TWI711137B - 電子零件 - Google Patents

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Publication number
TWI711137B
TWI711137B TW104125674A TW104125674A TWI711137B TW I711137 B TWI711137 B TW I711137B TW 104125674 A TW104125674 A TW 104125674A TW 104125674 A TW104125674 A TW 104125674A TW I711137 B TWI711137 B TW I711137B
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Taiwan
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solder layer
layer
solder
area
metal material
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TW104125674A
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TW201606966A (zh
Inventor
藤井義磨郎
小栗洋
坂本�明
田口智也
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日商濱松赫德尼古斯股份有限公司
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Publication of TW201606966A publication Critical patent/TW201606966A/zh
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
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Abstract

本發明之電子零件1A包含基板10、複數層導電性金屬材料層21、22、23之積層體20、及包含Au-Sn合金焊料之焊料層30。積層體20配置於基材10上。焊料層30配置於積層體20上。積層體20具有包含Au之表面層，作為構成最外層之導電性金屬材料層23。表面層包含供配置焊料層30之焊料層配置區域23a、及不配置焊料層30之焊料層非配置區域23b。焊料層配置區域23a與焊料層非配置區域23h係空間性隔開。

Description

電子零件
本發明係關於電子零件。
具備光電二極體、配置於光電二極體之上表面之受光部以外之部位之端子、及配置於端子之凸塊之電子零件為已知(例如，參照專利文獻1)。於該電子零件，安裝IC晶片作為其他電子零件。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2000-307133號公報
本發明之一態樣之目的在於提供一種即便於使用Au-Sn合金焊料安裝其他電子零件之情形，亦可適當進行該其他電子零件之安裝之電子零件。
本發明之一態樣之電子零件包含基材、配置於基材上之複數層導電性金屬材料層之積層體、配置於積層體上且包含Au-Su合金焊料之焊料層。積層體具有包含Au之表面層，作為構成最外層之導電性金屬材料層。表面層包含供配置焊料層之焊料層配置區域、與不配置焊料層之焊料層非配置區域。焊料層配置區域與焊料層非配置區域係空間性隔開。
於本態樣之電子零件中，構成積層體之最外層之包含Au之表面層包含焊料層配置區域與焊料層非配置區域，焊料層配置區域與焊料層非配置區域係空間性隔開。於上述一態樣之電子零件安裝其他電子零件時，配置於積層體上之焊料層(Au-Sn合金焊料)熔融。熔融之Au-Sn合金焊料自焊料層配置區域流出至焊料層非配置區域之情形被抑制。
因焊料層與表面層之受熱歷程，而有表面層之Au擴散至焊料層，使Au-Sn合金焊料之組成發生變化之情況。於Au-Sn合金焊料之組成發生變化時，有Au-Sn合金焊料之熔點產生差異、或其他電子零件之接合狀態變得不均一之虞。如上所述，因焊料層配置區域與焊料層非配置區域係空間性隔開，故即便表面層之Au擴散至焊料層時，焊料層非配置區域之Au亦不會擴散至焊料層。因來自表面層之Au之擴散量受抑制，故Au-Sn合金焊料之組成變化受抑制。
由上述，根據本態樣，即便使用Au-Sn合金焊料安裝其他電子零件時，亦可適當進行該其他電子零件之安裝。
焊料層配置區域亦可以被焊料層非配置區域包圍之方式位於焊料層非配置區域之內側，且於其全周與焊料層非配置區域空間性隔開。該情形時，可進一步確實地抑制熔融之Au-Sn合金焊料自焊料層配置區域流出至焊料層非配置區域。因來自焊料層配置區域之Au之擴散量進一步被抑制，故可確實地抑制Au-Sn合金焊料之組成變化。
焊料層配置區域與焊料層非配置區域亦可藉由形成於表面層之狹縫而空間性隔開。該情形時，可簡易實現焊料層配置區域與焊料層非配置區域空間性隔開之構成。
焊料層亦可介隔包含Pt之障壁層而配置於積層體上。該情形時，因防止來自焊料層配置區域之Au之擴散，故可進一步確實地抑制Au-Sn合金焊料之組成變化。
根據本發明之上述一態樣，即便於使用Au-Sn合金焊料安裝其他電子零件之情形時，亦可提供可適當進行該其他電子零件之安裝之電子零件。
1A‧‧‧電子零件
1B‧‧‧電子零件
3‧‧‧電子零件
10‧‧‧基材
11‧‧‧半導體基板
11a‧‧‧主表面
11b‧‧‧主表面
11c‧‧‧側面
13‧‧‧第1半導體區域
15‧‧‧鈍化膜
15a‧‧‧開口
20‧‧‧積層體
21~23‧‧‧導電性金屬材料層
23a‧‧‧焊料層配置區域
23b‧‧‧焊料層非配置區域
23c‧‧‧狹縫
30‧‧‧焊料層
40‧‧‧障壁層
50‧‧‧光阻劑
61‧‧‧陰極電極
63‧‧‧陽極電極
圖1係顯示一實施形態之電子零件之俯視圖。
圖2係用以說明沿圖1所示之II-II線之剖面構成之圖。
圖3係用以說明本實施形態之變化例之電子零件之剖面構成之圖。
圖4係用以說明形成焊料層之過程之圖。
圖5係用以說明焊料層配置區域與焊料層非配置區域未空間性隔開之電子零件之剖面構成之圖。
圖6係顯示本實施形態之其他變化例之電子零件之俯視圖。
圖7係用以說明本實施形態之其他變化例之電子零件之剖面構成之圖。
圖8係顯示本實施形態之其他變化例之電子零件之俯視圖。
於下文中，一面參照圖式一面詳細說明本發明之實施形態。另，於說明中，於相同要件或具有相同功能之要件使用相同符號，且省略重複說明。
參照圖1及圖2，說明本實施形態之電子零件1A之構成。圖1係本實施形態之電子零件之俯視圖。圖2係用以說明沿圖1所示之II-II線之剖面構成之圖。
電子零件1A包含基材10、積層體20、及焊料層30。電子零件1A例如作為供安裝其他電子零件3之子安裝基板而發揮功能。其他電子零件3為例如雷射二極體等。所謂安裝，不僅包含電性且物理性連 接，亦包含僅物理性連接之情形。
基材10包含半導體基板11。半導體基板11係具有彼此對向之一對主表面11a、11b、與側面11c之第1導電型(例如N型)之矽基板。側面11c係以連結一對主表面11a、11b間之方式於一對主表面11a、11b之對向方向延伸。於本實施形態中，如圖1所示，半導體基板11於俯視時呈矩形形狀，且具有四個側面11c。
半導體基板11具有位於主表面11a側之第二導電型(例如P型)之第1半導體區域13。第一半導體區域13係添加有第二導電型之雜質(硼等)之區域。第一半導體區域13之雜質濃度高於半導體基板11。第一半導體區域13係例如藉由利用離子注入法或擴散法，將第二導電型之雜質自主表面11a側添加至半導體基板11而形成。
於基材10中，以半導體基板11與第一半導體區域13形成PN接合。即，基材10係其主表面11a為光入射面之表面入射型光電二極體。第一半導體區域13與半導體基板11構成光感應區域。於將作為其他電子零件3之雷射二極體安裝於電子零件1A之情形時，上述光電二極體監控雷射二極體之輸出。
基材10包含鈍化膜15。鈍化膜15配置於半導體基板11之主表面11a上。於鈍化膜15，於與第一半導體區域13對應之位置形成有開口15a。於第一半導體區域13(光感應區域)，通過形成於鈍化膜15之開口15a而入射光。鈍化膜15包含例如SiN。鈍化膜15係藉由例如CVD(Chemical Vapor Deposition：化學氣相沈積)法而形成。於本實施形態中，省略了連接於上述光電二極體之陰極電極(焊墊)及陽極電極(焊墊)之圖示。
積層體20係配置於基材10(鈍化膜15)上。詳細而言，積層體20係配置於鈍化膜15中未形成開口15a之區域上。積層體20包含複數層導電性金屬材料層。於本實施形態中，積層體20包含三層之導電性金屬 材料層21、22、23。各導電性金屬材料層21、22、23係包含導電性金屬材料之層。三層之導電性金屬材料層21、22、23係自基材10側按導電性金屬材料層21、導電性金屬材料層22、導電性金屬材料層23之順序積層而成。各導電性金屬材料層21、22、23係藉由例如真空蒸鍍法或濺鍍法而形成。
導電性金屬材料層21係構成與基材10(鈍化膜15)之接觸層。導電性金屬材料層21提高與基材10(鈍化膜15)之密接性。導電性金屬材料層21例如包含Ti。導電性金屬材料層21之厚度例如為0.1~0.2μm。導電性金屬材料層21除Ti以外，亦可包含Cr等。
導電性金屬材料層22構成中間障壁層。導電性金屬材料層22係防止來自其他導電性金屬材料層21、23之金屬材料(金屬原子)擴散。導電性金屬材料層22例如包含Pt。導電性金屬材料層22之厚度例如為0.2~0.3μm。
導電性金屬材料層23構成積層體20之最外層。即，導電性金屬材料層23構成表面層。導電性金屬材料層23例如包含Au。導電性金屬材料層23之厚度例如為0.1~0.5μm。
導電性金屬材料層23包含供配置焊料層30之焊料層配置區域23a、及不配置焊料層30之焊料層非配置區域23b。焊料層配置區域23a與焊料層非配置區域23b係於導電性金屬材料層22上，空間性隔開。即，於焊料層配置區域23a與焊料層非配置區域23b空間性隔開之區域中，露出導電性金屬材料層22。
於本實施形態中，焊料層配置區域23a係以被焊料層非配置區域23b包圍之方式，位於焊料層非配置區域23b之內側，且於其全周與焊料層非配置區域23b空間性隔開。焊料層配置區域23a與焊料層非配置區域23b係藉由形成於導電性金屬材料層23之狹縫23c而空間性隔開。
焊料層30包含Au-Sn合金焊料，且配置於積層體20(導電性金屬材 料層23之焊料層配置區域23a)上。焊料層30相接於導電性金屬材料層23(焊料層配置區域23a)。焊料層30係藉由例如使用光阻劑(負型光阻劑)之脫除法而形成。焊料層30之厚度例如為2.0~5.0μm。
如上所述，於本實施形態中，包含Au之導電性金屬材料層23包含焊料層配置區域23a與焊料層非配置區域23b，且焊料層配置區域23a與焊料層非配置區域23b空間性隔開。於電子零件1A上安裝其他電子零件3時，配置於積層體20上之焊料層30(Au-Sn合金焊料)熔融。熔融之Au-Sn合金焊料自焊料層配置區域23a流出至焊料層非配置區域23b之情形受到抑制。
因電子零件1A之製造過程中焊料層30與導電性金屬材料層23之受熱歷程，而有導電性金屬材料層23之Au擴散至焊料層30，使得Au-Sn合金焊料之組成發生變化之情況。於Au-Sn合金焊料之組成發生變化時，有Au-Sn合金焊料之熔點產生差異、或其他電子零件3之接合狀態變得不均一之虞。
於本實施形態中，因焊料層配置區域23a與焊料層非配置區域23b空間性隔開，故即便於導電性金屬材料層23之Au擴散至焊料層30之情形，焊料層非配置區域23b之Au亦不會擴散至焊料層30。因來自導電性金屬材料層23之Au之擴散量受到抑制，故Au-Sn合金焊料之組成變化受到抑制。
該等之結果，依據電子零件1A，即便於使用Au-Sn合金焊料安裝其他電子零件3時，亦可適當地進行其他電子零件3之安裝。
於本實施形態中，焊料層配置區域23a係以被焊料層非配置區域23b包圍之方式，位於焊料層非配置區域23b之內側，且於其全周與焊料層非配置區域23b空間性隔開。藉此，可進一步確實地抑制熔融之Au-Sn合金焊料自焊料層配置區域23a流出至焊料層非配置區域23b。因可進一步抑制來自焊料層配置區域23a之Au之擴散量，故可確實地 抑制Au-Sn合金焊料之組成變化。
於本實施形態中，焊料層配置區域23a與焊料層非配置區域23b係藉由形成於導電性金屬材料層23之狹縫而空間性隔開。藉此，可簡單實現焊料層配置區域23a與焊料層非配置區域23b空間性隔開之構成。
其次，參照圖3，說明本實施形態之變化例之電子零件1B之構成。圖3係用以說明本實施形態之變化例之電子零件之剖面構成之圖。
電子零件1B包含基材10、積層體20、焊料層30、及障壁層40。電子零件1B亦與電子零件1A同樣，例如作為供安裝其他電子零件3之子安裝基板而發揮功能。
障壁層40係配置於積層體20與焊料層30之間。障壁層40相接於積層體20(導電性金屬材料層23)，且相接於焊料層30。即，焊料層30係介隔障壁層40而配置於積層體20上。障壁層40包含Pt。障壁層40例如藉由脫除法而與焊料層30一起形成。障壁層40之厚度例如為0.2~0.3μm。
於本變化例中，藉由障壁層40防止來自導電性金屬材料層23(焊料層配置區域23a)之Au擴散。因此，於電子零件1B中，可進一步確實地抑制Au-Sn合金焊料之組成變化。
於障壁層40配置於積層體20與焊料層30之間之情形，即便焊料層配置區域23a與焊料層非配置區域23b未空間性隔開，亦期待能抑制熔融之Au-Sn合金焊料自焊料層配置區域23a向焊料層非配置區域23b之流出。然而，由於下述事況，即便於存在障壁層40之情形，亦難以抑制上述熔融之Au-Sn合金焊料之流出。
於焊料層30藉由上述之脫除法而形成之情形，因光阻劑50之形狀而如圖4及圖5所示，焊料層30形成為較障壁層40更廣。即，焊料層30係以覆蓋障壁層40且與積層體20(導電性金屬材料層23)相接之方式 形成。焊料層30之厚度一般大於障壁層40之厚度。因此，焊料層30容易於平行於該焊料層30之方向擴開，致使焊料層30形成為比障壁層40更廣。若焊料層30相接於導電性金屬材料層23，則熔融之Au-Sn合金焊料有於導電性金屬材料層23上潤開之虞。因此，熔融之Au-Sn合金自焊料層配置區域23a流出至焊料層非配置區域23b。
於本變化例中，與電子零件1A同樣，焊料層配置區域23a與焊料層非配置區域23b空間性隔開。藉此，熔融之Au-Sn合金焊料自焊料層配置區域23a向焊料層非配置區域23b之流出確實被抑制。
以上雖說明了本發明之實施形態，但本發明並非限定於上述實施形態者，亦可在未脫離其主旨之範圍內進行各種變化。
基材10並未限定於表面入射型之光電二極體。基材10亦可為如圖6及圖7所示，至少一者之側面11c為光入射面之側面入射型之光電二極體。於圖6及圖7所示之電子零件1A中，以自鈍化膜15露出之方式，配置陰極電極(焊墊)61、與陽極電極(焊墊)63。圖6係顯示本實施形態之其他變化例之電子零件之俯視圖。圖7係用以說明本實施形態之其他變化例之電子零件之剖面構成之圖。
焊料層配置區域23a並無必要以被焊料層非配置區域23b包圍之方式位於焊料層非配置區域23b之內側且於其全周與焊料層非配置區域23b空間性隔開。例如，焊料層配置區域23a與焊料層非配置區域23b亦可如圖8所示，以被直線狀之狹縫23c分割之方式空間性隔開。
積層體20未必包含三層之導電性金屬材料層21、22、23。積層體20亦可包含二層之導電性金屬材料層，又可包含四層以上之導電性金屬材料層。於該等之情形，只要積層體20中的構成最外層之導電性金屬材料層，即表面層包含Au即可。
基材10亦可不為光電二極體，又，基材10未必包含半導體基板11。基材10亦可包含例如陶瓷基板或玻璃基板等取代半導體基板11。 陶瓷基板係使用氮化鋁(AlN)基板或氧化鋁(Al2O3)基板等。
安裝於電子零件1A、1B之其他電子零件3未必為雷射二極體。其他電子零件3亦可為例如受光元件、發光元件、半導體封裝、電路基板、主動零件、或被動零件。
[產業上之可利用性]
本發明可用於子安裝基板等之電子零件。
1A‧‧‧電子零件
3‧‧‧電子零件
10‧‧‧基材
11‧‧‧半導體基板
11a‧‧‧主表面
11b‧‧‧主表面
11c‧‧‧側面
13‧‧‧第1半導體區域
15‧‧‧鈍化膜
15a‧‧‧開口
20‧‧‧積層體
21~23‧‧‧導電性金屬材料層
23a‧‧‧焊料層配置區域
23b‧‧‧焊料層非配置區域
23c‧‧‧狹縫
30‧‧‧焊料層

Claims (6)

  1. 一種電子零件，其包含：基材；複數層導電性金屬材料層之積層體，其配置於上述基材上；及焊料層，其配置於上述積層體上，且包含Au-Sn合金焊料；且上述積層體具有含Au之表面層，作為構成最外層之上述導電性金屬材料層；上述表面層包含供配置上述焊料層之焊料層配置區域、及不配置上述焊料層之焊料層非配置區域；上述焊料層配置區域與上述焊料層相接；上述焊料層配置區域與上述焊料層非配置區域係空間性隔開。
  2. 如請求項1之電子零件，其中上述焊料層配置區域係以被上述焊料層非配置區域包圍之方式，位於上述焊料層非配置區域之內側，且其全周與上述焊料層非配置區域空間性隔開。
  3. 如請求項1之電子零件，其中上述焊料層配置區域與上述焊料層非配置區域係藉由形成於上述表面層之狹縫而空間性隔開。
  4. 如請求項2之電子零件，其中上述焊料層配置區域與上述焊料層非配置區域係藉由形成於上述表面層之狹縫而空間性隔開。
  5. 如請求項1至4中任一項之電子零件，其中於上述焊料層配置區域與上述焊料層非配置區域空間性隔開之區域，上述表面層下之上述導電性金屬材料層露出。
  6. 一種電子零件，其包含：基材； 複數層導電性金屬材料層之積層體，其配置於上述基材上；焊料層，其配置於上述積層體上，且包含Au-Sn合金焊料；及包含Pt之障壁層，其配置於上述積層體與上述焊料層之間；上述積層體具有含Au之表面層，作為構成最外層之上述導電性金屬材料層；上述表面層包含供配置上述焊料層之焊料層配置區域、及不配置上述焊料層之焊料層非配置區域；上述障壁層係與上述焊料層配置區域相接，並且與上述焊料層相接；上述焊料層配置區域與上述焊料層非配置區域係空間性隔開。
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