TWI710038B - 基板變形偵測和校正 - Google Patents

基板變形偵測和校正 Download PDF

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Publication number
TWI710038B
TWI710038B TW108113044A TW108113044A TWI710038B TW I710038 B TWI710038 B TW I710038B TW 108113044 A TW108113044 A TW 108113044A TW 108113044 A TW108113044 A TW 108113044A TW I710038 B TWI710038 B TW I710038B
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TW
Taiwan
Prior art keywords
substrate
processing chamber
bending
processing
fingerprint
Prior art date
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TW108113044A
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English (en)
Chinese (zh)
Other versions
TW201947681A (zh
Inventor
米林德 嘉德雷
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201947681A publication Critical patent/TW201947681A/zh
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Publication of TWI710038B publication Critical patent/TWI710038B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
TW108113044A 2018-05-07 2019-04-15 基板變形偵測和校正 TWI710038B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862668175P 2018-05-07 2018-05-07
US62/668,175 2018-05-07

Publications (2)

Publication Number Publication Date
TW201947681A TW201947681A (zh) 2019-12-16
TWI710038B true TWI710038B (zh) 2020-11-11

Family

ID=68385479

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108113044A TWI710038B (zh) 2018-05-07 2019-04-15 基板變形偵測和校正

Country Status (7)

Country Link
US (2) US10804125B2 (https=)
JP (1) JP7364597B2 (https=)
KR (1) KR102753315B1 (https=)
CN (1) CN112106179B (https=)
SG (1) SG11202010093QA (https=)
TW (1) TWI710038B (https=)
WO (1) WO2019217015A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020092005A1 (en) * 2018-10-30 2020-05-07 Lam Research Corporation Substrate state detection for plasma processing tools
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
US12386342B2 (en) * 2022-05-11 2025-08-12 Applied Materials, Inc. Holistic analysis of multidimensional sensor data for substrate processing equipment
KR20240020964A (ko) * 2022-08-09 2024-02-16 주식회사 테스 기판처리방법

Citations (3)

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JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US20110293854A1 (en) * 2009-02-12 2011-12-01 Mitsui Engineering & Shipbuilding Co., Ltd Atomic layer growing apparatus and thin film forming method
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films

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JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
US6996472B2 (en) * 2000-10-10 2006-02-07 The United States Of America As Represented By The Department Of Health And Human Services Drift compensation method for fingerprint spectra
JP4060558B2 (ja) * 2001-09-12 2008-03-12 株式会社日立製作所 欠陥検査方法及びその装置
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP5283961B2 (ja) * 2008-04-24 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN102089873A (zh) * 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
JP5597695B2 (ja) * 2010-03-26 2014-10-01 株式会社アルバック 基板保持装置及び基板保持方法
JP2013046047A (ja) * 2011-08-26 2013-03-04 Toshiba Corp 加熱装置および半導体装置の製造方法
US10497747B2 (en) * 2012-11-28 2019-12-03 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10726231B2 (en) * 2012-11-28 2020-07-28 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10266802B2 (en) * 2013-01-16 2019-04-23 Orteron (T.O) Ltd. Method for controlling biological processes in microorganisms
JP6388605B2 (ja) * 2013-02-08 2018-09-12 コーネル ユニバーシティー 生体分子処理プラットフォーム及びその使用
US9245768B2 (en) * 2013-12-17 2016-01-26 Applied Materials, Inc. Method of improving substrate uniformity during rapid thermal processing
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US20160355947A1 (en) * 2015-06-05 2016-12-08 Sensor Electronic Technology, Inc. Susceptor Heating For Epitaxial Growth Process
KR20170016681A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 레지스트레이션 제어된 포토마스크의 결함 검출 방법
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
JP6690488B2 (ja) 2016-09-29 2020-04-28 株式会社リコー 情報処理システム、閲覧制御方法、情報処理装置及びプログラム
JP7085824B2 (ja) 2017-11-28 2022-06-17 東京エレクトロン株式会社 成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US20110293854A1 (en) * 2009-02-12 2011-12-01 Mitsui Engineering & Shipbuilding Co., Ltd Atomic layer growing apparatus and thin film forming method
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films

Also Published As

Publication number Publication date
CN112106179A (zh) 2020-12-18
US11417553B2 (en) 2022-08-16
TW201947681A (zh) 2019-12-16
SG11202010093QA (en) 2020-11-27
CN112106179B (zh) 2025-09-09
WO2019217015A1 (en) 2019-11-14
JP7364597B2 (ja) 2023-10-18
US20200357672A1 (en) 2020-11-12
US20190341285A1 (en) 2019-11-07
JP2021523565A (ja) 2021-09-02
KR20200141525A (ko) 2020-12-18
US10804125B2 (en) 2020-10-13
KR102753315B1 (ko) 2025-01-09

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