CN112106179B - 基板变形检测和校正 - Google Patents

基板变形检测和校正

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Publication number
CN112106179B
CN112106179B CN201980030330.6A CN201980030330A CN112106179B CN 112106179 B CN112106179 B CN 112106179B CN 201980030330 A CN201980030330 A CN 201980030330A CN 112106179 B CN112106179 B CN 112106179B
Authority
CN
China
Prior art keywords
substrate
process chamber
fingerprint
processing procedure
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980030330.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN112106179A (zh
Inventor
M·嘉德瑞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN112106179A publication Critical patent/CN112106179A/zh
Application granted granted Critical
Publication of CN112106179B publication Critical patent/CN112106179B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
CN201980030330.6A 2018-05-07 2019-04-05 基板变形检测和校正 Active CN112106179B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862668175P 2018-05-07 2018-05-07
US62/668,175 2018-05-07
PCT/US2019/026155 WO2019217015A1 (en) 2018-05-07 2019-04-05 Substrate deformation detection and correction

Publications (2)

Publication Number Publication Date
CN112106179A CN112106179A (zh) 2020-12-18
CN112106179B true CN112106179B (zh) 2025-09-09

Family

ID=68385479

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980030330.6A Active CN112106179B (zh) 2018-05-07 2019-04-05 基板变形检测和校正

Country Status (7)

Country Link
US (2) US10804125B2 (https=)
JP (1) JP7364597B2 (https=)
KR (1) KR102753315B1 (https=)
CN (1) CN112106179B (https=)
SG (1) SG11202010093QA (https=)
TW (1) TWI710038B (https=)
WO (1) WO2019217015A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020092005A1 (en) * 2018-10-30 2020-05-07 Lam Research Corporation Substrate state detection for plasma processing tools
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
US12386342B2 (en) * 2022-05-11 2025-08-12 Applied Materials, Inc. Holistic analysis of multidimensional sensor data for substrate processing equipment
KR20240020964A (ko) * 2022-08-09 2024-02-16 주식회사 테스 기판처리방법

Citations (2)

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CN102089873A (zh) * 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
CN107799411A (zh) * 2016-09-06 2018-03-13 Spts科技有限公司 监测和控制晶片衬底形变的方法和系统

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JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
US6996472B2 (en) * 2000-10-10 2006-02-07 The United States Of America As Represented By The Department Of Health And Human Services Drift compensation method for fingerprint spectra
JP4060558B2 (ja) * 2001-09-12 2008-03-12 株式会社日立製作所 欠陥検査方法及びその装置
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP5283961B2 (ja) * 2008-04-24 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4575984B2 (ja) * 2009-02-12 2010-11-04 三井造船株式会社 原子層成長装置および薄膜形成方法
JP5597695B2 (ja) * 2010-03-26 2014-10-01 株式会社アルバック 基板保持装置及び基板保持方法
JP2013046047A (ja) * 2011-08-26 2013-03-04 Toshiba Corp 加熱装置および半導体装置の製造方法
US10497747B2 (en) * 2012-11-28 2019-12-03 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10726231B2 (en) * 2012-11-28 2020-07-28 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10266802B2 (en) * 2013-01-16 2019-04-23 Orteron (T.O) Ltd. Method for controlling biological processes in microorganisms
JP6388605B2 (ja) * 2013-02-08 2018-09-12 コーネル ユニバーシティー 生体分子処理プラットフォーム及びその使用
US9245768B2 (en) * 2013-12-17 2016-01-26 Applied Materials, Inc. Method of improving substrate uniformity during rapid thermal processing
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films
US20160355947A1 (en) * 2015-06-05 2016-12-08 Sensor Electronic Technology, Inc. Susceptor Heating For Epitaxial Growth Process
KR20170016681A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 레지스트레이션 제어된 포토마스크의 결함 검출 방법
JP6690488B2 (ja) 2016-09-29 2020-04-28 株式会社リコー 情報処理システム、閲覧制御方法、情報処理装置及びプログラム
JP7085824B2 (ja) 2017-11-28 2022-06-17 東京エレクトロン株式会社 成膜方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102089873A (zh) * 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
CN107799411A (zh) * 2016-09-06 2018-03-13 Spts科技有限公司 监测和控制晶片衬底形变的方法和系统

Also Published As

Publication number Publication date
TWI710038B (zh) 2020-11-11
CN112106179A (zh) 2020-12-18
US11417553B2 (en) 2022-08-16
TW201947681A (zh) 2019-12-16
SG11202010093QA (en) 2020-11-27
WO2019217015A1 (en) 2019-11-14
JP7364597B2 (ja) 2023-10-18
US20200357672A1 (en) 2020-11-12
US20190341285A1 (en) 2019-11-07
JP2021523565A (ja) 2021-09-02
KR20200141525A (ko) 2020-12-18
US10804125B2 (en) 2020-10-13
KR102753315B1 (ko) 2025-01-09

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