TWI701458B - 反射折射光學系統、照明光學系統、曝光裝置及物品製造方法 - Google Patents
反射折射光學系統、照明光學系統、曝光裝置及物品製造方法 Download PDFInfo
- Publication number
- TWI701458B TWI701458B TW108102550A TW108102550A TWI701458B TW I701458 B TWI701458 B TW I701458B TW 108102550 A TW108102550 A TW 108102550A TW 108102550 A TW108102550 A TW 108102550A TW I701458 B TWI701458 B TW I701458B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- catadioptric optical
- catadioptric
- reflecting
- refractive
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 237
- 238000005286 illumination Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012788 optical film Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 238000003384 imaging method Methods 0.000 claims description 16
- 210000001747 pupil Anatomy 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 238000013461 design Methods 0.000 description 112
- 238000010586 diagram Methods 0.000 description 25
- 239000010408 film Substances 0.000 description 20
- 238000011161 development Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- 230000004075 alteration Effects 0.000 description 6
- 238000002167 anodic stripping potentiometry Methods 0.000 description 4
- 206010003664 atrial septal defect Diseases 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016236244 | 2016-12-05 | ||
| JP2016-236244 | 2016-12-05 | ||
| JP2017090239A JP6882053B2 (ja) | 2016-12-05 | 2017-04-28 | カタディオプトリック光学系、照明光学系、露光装置および物品製造方法 |
| JP2017-090239 | 2017-04-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201921024A TW201921024A (zh) | 2019-06-01 |
| TWI701458B true TWI701458B (zh) | 2020-08-11 |
Family
ID=62566004
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108102550A TWI701458B (zh) | 2016-12-05 | 2017-11-21 | 反射折射光學系統、照明光學系統、曝光裝置及物品製造方法 |
| TW106140227A TWI657260B (zh) | 2016-12-05 | 2017-11-21 | 反射折射光學系統、照明光學系統、曝光裝置及物品製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106140227A TWI657260B (zh) | 2016-12-05 | 2017-11-21 | 反射折射光學系統、照明光學系統、曝光裝置及物品製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6882053B2 (enExample) |
| KR (1) | KR102239056B1 (enExample) |
| TW (2) | TWI701458B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6820717B2 (ja) | 2016-10-28 | 2021-01-27 | 株式会社日立ハイテク | プラズマ処理装置 |
| WO2021192210A1 (ja) | 2020-03-27 | 2021-09-30 | 株式会社日立ハイテク | 半導体製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873476B2 (en) * | 2000-01-14 | 2005-03-29 | Carl-Zeiss-Stiftung | Microlithographic reduction projection catadioptric objective |
| JP2006049904A (ja) * | 2004-07-30 | 2006-02-16 | Asml Holding Nv | リソグラフィ用のオフアクシス反射屈折投影光学系 |
| US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| CN105372799A (zh) * | 2015-12-14 | 2016-03-02 | 中国科学院光电技术研究所 | 一种离轴反射型广角光学镜头 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61203419A (ja) | 1985-03-06 | 1986-09-09 | Nippon Kogaku Kk <Nikon> | 反射縮小投影光学系 |
| JPH0478002A (ja) | 1990-07-13 | 1992-03-12 | Toshiba Corp | 磁気記録再生装置 |
| JPH07146442A (ja) | 1994-08-04 | 1995-06-06 | Canon Inc | 反射光学系 |
| JPH11326767A (ja) * | 1998-05-07 | 1999-11-26 | Nikon Corp | 反射屈折縮小光学系 |
| JP2000227555A (ja) * | 1998-07-16 | 2000-08-15 | Olympus Optical Co Ltd | 結像光学系 |
| JP2000098228A (ja) * | 1998-09-21 | 2000-04-07 | Nikon Corp | 投影露光装置及び露光方法、並びに反射縮小投影光学系 |
| WO2002044786A2 (en) | 2000-11-28 | 2002-06-06 | Carl Zeiss Smt Ag | Catadioptric projection system for 157 nm lithography |
| JP2003215458A (ja) * | 2002-01-23 | 2003-07-30 | Nikon Corp | 反射屈折光学系 |
| JP5196869B2 (ja) * | 2007-05-15 | 2013-05-15 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
| JP2009025737A (ja) | 2007-07-23 | 2009-02-05 | Canon Inc | 反射屈折型投影光学系、露光装置及びデバイス製造方法 |
| JP5654735B2 (ja) * | 2008-05-15 | 2015-01-14 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学器械及びその結像光学器械を含む投影露光装置 |
| JP5398185B2 (ja) | 2008-07-09 | 2014-01-29 | キヤノン株式会社 | 投影光学系、露光装置およびデバイス製造方法 |
| JP2011107594A (ja) * | 2009-11-20 | 2011-06-02 | Nidec Copal Corp | 撮像光学系及び撮像装置 |
| DE102010040030B4 (de) * | 2010-08-31 | 2017-02-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Objektiv und Bildaufnahmesystem |
-
2017
- 2017-04-28 JP JP2017090239A patent/JP6882053B2/ja active Active
- 2017-11-21 TW TW108102550A patent/TWI701458B/zh active
- 2017-11-21 TW TW106140227A patent/TWI657260B/zh active
- 2017-12-04 KR KR1020170165029A patent/KR102239056B1/ko active Active
-
2021
- 2021-04-27 JP JP2021075357A patent/JP7029564B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873476B2 (en) * | 2000-01-14 | 2005-03-29 | Carl-Zeiss-Stiftung | Microlithographic reduction projection catadioptric objective |
| US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| JP2006049904A (ja) * | 2004-07-30 | 2006-02-16 | Asml Holding Nv | リソグラフィ用のオフアクシス反射屈折投影光学系 |
| CN105372799A (zh) * | 2015-12-14 | 2016-03-02 | 中国科学院光电技术研究所 | 一种离轴反射型广角光学镜头 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI657260B (zh) | 2019-04-21 |
| KR102239056B1 (ko) | 2021-04-12 |
| JP6882053B2 (ja) | 2021-06-02 |
| JP2018092116A (ja) | 2018-06-14 |
| KR20180064306A (ko) | 2018-06-14 |
| TW201921024A (zh) | 2019-06-01 |
| TW201821857A (zh) | 2018-06-16 |
| JP2021113998A (ja) | 2021-08-05 |
| JP7029564B2 (ja) | 2022-03-03 |
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