TWI697950B - 基板處理裝置以及基板處理方法 - Google Patents

基板處理裝置以及基板處理方法 Download PDF

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Publication number
TWI697950B
TWI697950B TW107147186A TW107147186A TWI697950B TW I697950 B TWI697950 B TW I697950B TW 107147186 A TW107147186 A TW 107147186A TW 107147186 A TW107147186 A TW 107147186A TW I697950 B TWI697950 B TW I697950B
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TW
Taiwan
Prior art keywords
flow path
pipe
ejection
substrate processing
substrate
Prior art date
Application number
TW107147186A
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English (en)
Chinese (zh)
Other versions
TW201939602A (zh
Inventor
菅原雄二
東克栄
竹松佑介
温井宏樹
青木拓
Original Assignee
日商斯庫林集團股份有限公司
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Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201939602A publication Critical patent/TW201939602A/zh
Application granted granted Critical
Publication of TWI697950B publication Critical patent/TWI697950B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Nozzles (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW107147186A 2018-03-12 2018-12-26 基板處理裝置以及基板處理方法 TWI697950B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018044188A JP2019160958A (ja) 2018-03-12 2018-03-12 基板処理装置および基板処理方法
JP2018-044188 2018-03-12

Publications (2)

Publication Number Publication Date
TW201939602A TW201939602A (zh) 2019-10-01
TWI697950B true TWI697950B (zh) 2020-07-01

Family

ID=67911890

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107147186A TWI697950B (zh) 2018-03-12 2018-12-26 基板處理裝置以及基板處理方法

Country Status (4)

Country Link
JP (1) JP2019160958A (ko)
KR (1) KR20190107566A (ko)
CN (1) CN110262198A (ko)
TW (1) TWI697950B (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150114432A1 (en) * 2013-10-24 2015-04-30 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
TW201707058A (zh) * 2015-03-30 2017-02-16 思可林集團股份有限公司 基板處理裝置
US20170236728A1 (en) * 2016-02-17 2017-08-17 SCREEN Holdings Co., Ltd. Substrate processing apparatus and gap washing method
TW201738003A (zh) * 2016-03-08 2017-11-01 Ebara Corp 基板洗淨裝置、基板洗淨方法、基板處理裝置及基板乾燥裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001191006A (ja) * 1999-10-26 2001-07-17 Tokyo Electron Ltd 液処理装置
JP3939077B2 (ja) * 2000-05-30 2007-06-27 大日本スクリーン製造株式会社 基板洗浄装置
JP2004082038A (ja) * 2002-08-28 2004-03-18 Seiko Epson Corp 超音波洗浄方法、超音波洗浄装置および、超音波洗浄ノズルのノズル部の製造方法
JP2004337858A (ja) * 2004-07-08 2004-12-02 Dainippon Screen Mfg Co Ltd 洗浄ノズル及び基板洗浄装置
JP5840854B2 (ja) * 2011-03-30 2016-01-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5954096B2 (ja) * 2012-10-11 2016-07-20 東京エレクトロン株式会社 液処理装置
JP6276979B2 (ja) * 2013-12-04 2018-02-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6527674B2 (ja) * 2014-03-26 2019-06-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、ノズルおよび基板処理方法
CN105914167B (zh) * 2015-02-25 2018-09-04 株式会社思可林集团 基板处理装置
JP6377030B2 (ja) 2015-09-01 2018-08-22 東京エレクトロン株式会社 基板処理装置
JP6593591B2 (ja) * 2015-10-07 2019-10-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150114432A1 (en) * 2013-10-24 2015-04-30 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
TW201707058A (zh) * 2015-03-30 2017-02-16 思可林集團股份有限公司 基板處理裝置
US20170236728A1 (en) * 2016-02-17 2017-08-17 SCREEN Holdings Co., Ltd. Substrate processing apparatus and gap washing method
TW201738003A (zh) * 2016-03-08 2017-11-01 Ebara Corp 基板洗淨裝置、基板洗淨方法、基板處理裝置及基板乾燥裝置

Also Published As

Publication number Publication date
TW201939602A (zh) 2019-10-01
JP2019160958A (ja) 2019-09-19
CN110262198A (zh) 2019-09-20
KR20190107566A (ko) 2019-09-20

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