JP7410811B2 - 液供給ユニット、基板処理装置 - Google Patents
液供給ユニット、基板処理装置 Download PDFInfo
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- JP7410811B2 JP7410811B2 JP2020110237A JP2020110237A JP7410811B2 JP 7410811 B2 JP7410811 B2 JP 7410811B2 JP 2020110237 A JP2020110237 A JP 2020110237A JP 2020110237 A JP2020110237 A JP 2020110237A JP 7410811 B2 JP7410811 B2 JP 7410811B2
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- 239000007788 liquid Substances 0.000 title claims description 214
- 238000012545 processing Methods 0.000 title claims description 114
- 239000000758 substrate Substances 0.000 title claims description 90
- 239000012535 impurity Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 27
- 238000011144 upstream manufacturing Methods 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 231
- 238000004140 cleaning Methods 0.000 description 28
- 238000012546 transfer Methods 0.000 description 17
- 239000000872 buffer Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000011084 recovery Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 6
- 238000003672 processing method Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
500 液供給ユニット
520 容器
540 液供給管
560 フィルター
580 マイクロ波の印加部材
581 第1マイクロ波の印加部材
582 第2マイクロ波の印加部材
Claims (16)
- 基板を処理する装置において、
内部に処理空間を有するハウジングと、
前記ハウジング内で基板を支持する支持ユニットと、
前記支持ユニットに支持された基板に処理液を吐出するノズルと、
前記ノズルに前記処理液を供給する液供給ユニットと、を含み、
前記液供給ユニットは、
前記処理液が貯蔵される貯蔵空間を有する容器と、
前記容器で前記ノズルに前記処理液が流れるようにする液供給管と、
前記ノズルに前記処理液が供給される前に前記処理液にマイクロ波を印加するマイクロ波の印加部材と、
前記液供給管に設置されて、前記ノズルへ供給される処理液中の不純物を濾過するフィルターを含み、
前記マイクロ波の印加部材は、前記フィルターより上流に配置されて前記処理液において不純物を凝集させ、
前記処理液は、有機物を含む液である基板処理装置。 - 前記液供給管には、
前記フィルターより上流にバルブが設置され、
前記バルブより下流に前記マイクロ波の印加部材が設置される請求項1に記載の基板処理装置。 - 前記液供給管には、
前記フィルターより上流にポンプが設置され、
前記ポンプより下流に前記マイクロ波の印加部材が設置される請求項1に記載の基板処理装置。 - 前記液供給管には、
前記フィルターより上流に流量計が設置され、
前記流量計より下流に前記マイクロ波の印加部材が設置される請求項1に記載の基板処理装置。 - 前記マイクロ波の印加部材は、前記容器に設置されて前記容器内の処理液にマイクロ波を印加する請求項1に記載の基板処理装置。
- 前記容器は、前記容器内に配置され、前記マイクロ波の印加部材を囲むカバーをさらに含み、前記カバーは、マイクロ波が透過する材質で提供され、
前記容器は、マイクロ波が透過しない材質で提供されてマイクロ波が前記容器の外部に流出されることを遮断する請求項5に記載の基板処理装置。 - 前記マイクロ波の印加部材は、
前記液供給管に設置される請求項1乃至請求項4のいずれかの一項に記載の基板処理装置。 - 前記マイクロ波の印加部材は、
前記処理液で不純物を凝集させるための第1マイクロ波を印加する第1マイクロ波の印加部材であり、
前記液供給ユニットは、前記処理液を加熱するための第2マイクロ波を印加する第2マイクロ波の印加部材をさらに含み、
前記第2マイクロ波の印加部材は、第1マイクロ波の印加部材より低い出力のマイクロ波を提供する請求項1に記載の基板処理装置。 - 前記第1マイクロ波の印加部材は、前記フィルターより上流に配置し、前記第2マイクロ波の印加部材は、前記フィルターより下流に配置される請求項8に記載の基板処理装置。
- 前記液供給管には、
前記フィルターより上流にバルブが設置され、
前記バルブより下流に前記第1マイクロ波の印加部材が設置される請求項9に記載の基板処理装置。 - 前記液供給管には、
前記フィルターより上流にポンプが設置され、
前記ポンプより下流に前記第1マイクロ波の印加部材が設置される請求項9に記載の基板処理装置。 - 前記液供給管には、
前記フィルターより上流に流量計が設置され、
前記流量計より下流に前記第1マイクロ波の印加部材が設置される請求項9に記載の基板処理装置。 - 処理液が貯蔵される貯蔵空間を有する容器と、
前記容器でノズルに前記処理液が流れるようにする液供給管と、
前記ノズルに前記処理液が供給される前に前記処理液にマイクロ波を印加して前記処理液で不純物を凝集させるための第1マイクロ波を印加する第1マイクロ波の印加部材と、
前記液供給管に設置されて前記ノズルに供給される処理液中の不純物を濾過するフィルターと、を含み、
前記第1マイクロ波の印加部材は、前記フィルターより上流に配置されて前記処理液において不純物を凝集させ、
前記処理液は、有機物を含む液である液供給ユニット。 - 前記処理液を加熱するための第2マイクロ波を印加する第2マイクロ波の印加部材をさらに含み、
前記第2マイクロ波の印加部材は、第1マイクロ波の印加部材より低い出力のマイクロ波を提供する請求項13に記載の液供給ユニット。 - 前記第2マイクロ波の印加部材は、前記フィルターより下流に配置される請求項14に記載の液供給ユニット。
- 前記第2マイクロ波の印加部材は、前記ノズルに隣接するように提供される請求項14又は請求項15に記載の液供給ユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020190076767A KR102288985B1 (ko) | 2019-06-27 | 2019-06-27 | 액공급유닛, 기판 처리 장치 및 기판 처리 방법 |
KR10-2019-0076767 | 2019-06-27 |
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JP2021007148A JP2021007148A (ja) | 2021-01-21 |
JP7410811B2 true JP7410811B2 (ja) | 2024-01-10 |
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Country Status (5)
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US (1) | US11794219B2 (ja) |
JP (1) | JP7410811B2 (ja) |
KR (1) | KR102288985B1 (ja) |
CN (1) | CN112151413A (ja) |
TW (1) | TWI800738B (ja) |
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KR20230082739A (ko) | 2021-12-01 | 2023-06-09 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124185A (ja) | 1998-10-13 | 2000-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2008066505A (ja) | 2006-09-07 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 流体加熱装置及びそれを利用するウエハ処理装置 |
JP2019079995A (ja) | 2017-10-26 | 2019-05-23 | 株式会社Screenホールディングス | 処理液供給装置、基板処理装置、および処理液供給方法 |
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JPH11226387A (ja) * | 1998-02-13 | 1999-08-24 | Karasawa Fine:Kk | 流体による処理方法および装置 |
KR20030021581A (ko) | 2001-09-06 | 2003-03-15 | 씨엘디 주식회사 | 세정 장치 및 그를 이용한 세정 방법 |
US20050260771A1 (en) * | 2002-07-08 | 2005-11-24 | Mitsuaki Iwashita | Processing device and processing method |
KR20060048607A (ko) * | 2004-08-05 | 2006-05-18 | 마츠시타 덴끼 산교 가부시키가이샤 | 액체가열장치, 세정장치, 및 세정방법 |
WO2006029160A2 (en) * | 2004-09-07 | 2006-03-16 | Phifer-Smith Corporation | Copper processing using an ozone-solvent solution |
KR100938235B1 (ko) * | 2007-11-07 | 2010-01-22 | 세메스 주식회사 | 약액 공급 장치 |
KR20150119293A (ko) * | 2013-03-26 | 2015-10-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
KR101788429B1 (ko) * | 2013-03-28 | 2017-10-19 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
KR101696194B1 (ko) * | 2014-05-29 | 2017-01-17 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR20160045299A (ko) * | 2014-10-17 | 2016-04-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 연계 처리 시스템 및 기판 처리 방법 |
JP6742124B2 (ja) * | 2016-03-30 | 2020-08-19 | 株式会社Screenホールディングス | 基板処理装置 |
JP6994307B2 (ja) * | 2017-03-27 | 2022-01-14 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6993806B2 (ja) * | 2017-07-31 | 2022-01-14 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
KR20190019230A (ko) * | 2017-08-16 | 2019-02-27 | 세메스 주식회사 | 세정 유체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
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- 2020-06-23 TW TW109121268A patent/TWI800738B/zh active
- 2020-06-24 CN CN202010592248.7A patent/CN112151413A/zh active Pending
- 2020-06-26 US US16/912,754 patent/US11794219B2/en active Active
- 2020-06-26 JP JP2020110237A patent/JP7410811B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124185A (ja) | 1998-10-13 | 2000-04-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2008066505A (ja) | 2006-09-07 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 流体加熱装置及びそれを利用するウエハ処理装置 |
JP2019079995A (ja) | 2017-10-26 | 2019-05-23 | 株式会社Screenホールディングス | 処理液供給装置、基板処理装置、および処理液供給方法 |
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KR102288985B1 (ko) | 2021-08-13 |
TW202105651A (zh) | 2021-02-01 |
TWI800738B (zh) | 2023-05-01 |
KR20210002180A (ko) | 2021-01-07 |
US20200406309A1 (en) | 2020-12-31 |
US11794219B2 (en) | 2023-10-24 |
JP2021007148A (ja) | 2021-01-21 |
CN112151413A (zh) | 2020-12-29 |
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