TWI695083B - 蒸氣放出裝置及成膜裝置 - Google Patents

蒸氣放出裝置及成膜裝置 Download PDF

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Publication number
TWI695083B
TWI695083B TW105139258A TW105139258A TWI695083B TW I695083 B TWI695083 B TW I695083B TW 105139258 A TW105139258 A TW 105139258A TW 105139258 A TW105139258 A TW 105139258A TW I695083 B TWI695083 B TW I695083B
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TW
Taiwan
Prior art keywords
organic compound
vapor
compound monomer
evaporator
vapor discharge
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TW105139258A
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English (en)
Chinese (zh)
Other versions
TW201730366A (zh
Inventor
齋藤和彦
林信博
廣野貴啓
岩橋照明
Original Assignee
日商愛發科股份有限公司
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Publication of TW201730366A publication Critical patent/TW201730366A/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
TW105139258A 2015-11-30 2016-11-29 蒸氣放出裝置及成膜裝置 TWI695083B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015232893 2015-11-30
JP2015-232893 2015-11-30

Publications (2)

Publication Number Publication Date
TW201730366A TW201730366A (zh) 2017-09-01
TWI695083B true TWI695083B (zh) 2020-06-01

Family

ID=58797125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105139258A TWI695083B (zh) 2015-11-30 2016-11-29 蒸氣放出裝置及成膜裝置

Country Status (5)

Country Link
JP (1) JP6637520B2 (ja)
KR (1) KR102139125B1 (ja)
CN (1) CN108291292B (ja)
TW (1) TWI695083B (ja)
WO (1) WO2017094469A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110629161B (zh) * 2019-09-23 2020-09-29 北京师范大学 一种定量真空蒸发制备共价有机框架材料薄膜的方法
KR20220064034A (ko) * 2020-11-11 2022-05-18 주식회사 엠아이 박막 증착용 기화 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187327A (ja) * 1997-06-25 1999-03-30 Ebara Corp 液体原料気化装置
JP2002217181A (ja) * 2001-01-19 2002-08-02 Japan Steel Works Ltd:The 半導体原料供給用気化器
TW576872B (en) * 1997-09-11 2004-02-21 Applied Materials Inc Vaporization and deposition apparatus and process
JP2007070691A (ja) * 2005-09-07 2007-03-22 Tokyo Electron Ltd 気化器及び成膜装置
TWI421367B (zh) * 2005-09-20 2014-01-01 Univ Tohoku 成膜裝置、蒸發治具及測定方法
TWI504774B (zh) * 2013-03-14 2015-10-21 Nanmat Technology Co Ltd 高純度pdmat前驅物蒸氣之製作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3770409B2 (ja) * 1995-01-06 2006-04-26 東京エレクトロン株式会社 Hmds供給装置
US6195504B1 (en) * 1996-11-20 2001-02-27 Ebara Corporation Liquid feed vaporization system and gas injection device
JP4601535B2 (ja) * 2005-09-09 2010-12-22 株式会社リンテック 低温度で液体原料を気化させることのできる気化器
KR101191690B1 (ko) * 2007-02-28 2012-10-16 가부시키가이샤 알박 증착원, 증착 장치, 유기 박막의 성막 방법
JP5141141B2 (ja) * 2007-08-23 2013-02-13 東京エレクトロン株式会社 気化器、気化器を用いた原料ガス供給システム及びこれを用いた成膜装置
JP5319373B2 (ja) * 2009-04-10 2013-10-16 富士フイルム株式会社 ガスバリアフィルムおよびガスバリアフィルムの製造方法
JP2012204791A (ja) * 2011-03-28 2012-10-22 Tokyo Electron Ltd 気化装置、ガス供給装置及びこれを用いた成膜装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187327A (ja) * 1997-06-25 1999-03-30 Ebara Corp 液体原料気化装置
TW576872B (en) * 1997-09-11 2004-02-21 Applied Materials Inc Vaporization and deposition apparatus and process
JP2002217181A (ja) * 2001-01-19 2002-08-02 Japan Steel Works Ltd:The 半導体原料供給用気化器
JP2007070691A (ja) * 2005-09-07 2007-03-22 Tokyo Electron Ltd 気化器及び成膜装置
TWI421367B (zh) * 2005-09-20 2014-01-01 Univ Tohoku 成膜裝置、蒸發治具及測定方法
TWI504774B (zh) * 2013-03-14 2015-10-21 Nanmat Technology Co Ltd 高純度pdmat前驅物蒸氣之製作方法

Also Published As

Publication number Publication date
KR20180071351A (ko) 2018-06-27
JP6637520B2 (ja) 2020-01-29
JPWO2017094469A1 (ja) 2018-08-02
WO2017094469A1 (ja) 2017-06-08
CN108291292A (zh) 2018-07-17
CN108291292B (zh) 2020-06-26
KR102139125B1 (ko) 2020-07-29
TW201730366A (zh) 2017-09-01

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