JP5764721B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5764721B2 JP5764721B2 JP2014522529A JP2014522529A JP5764721B2 JP 5764721 B2 JP5764721 B2 JP 5764721B2 JP 2014522529 A JP2014522529 A JP 2014522529A JP 2014522529 A JP2014522529 A JP 2014522529A JP 5764721 B2 JP5764721 B2 JP 5764721B2
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- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- B05D1/60—Deposition of organic layers from vapour phase
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- C23C14/24—Vacuum evaporation
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
すなわち、真空槽内においてフィルム上に低分子の有機化合物のモノマー等の膜を均一な膜厚で形成することは困難であり、特にフィルムを搬送しながらフィルム上に均一な膜厚の有機化合物膜を高い成膜速度で形成することは非常に困難である。
本発明では、所定温度に制御された希ガスの流量を制御して前記蒸気放出装置に供給するように構成されている場合にも効果的である。
本発明では、前記真空槽内に、前記エネルギー線射出装置が配置される硬化室と、前記硬化室及び前記成膜室に連通されたバッファ室とが設けられ、前記硬化室及び前記バッファ室が、独立して制御可能な真空排気装置にそれぞれ接続されている場合にも効果的である。
その結果、本発明によれば、膜厚が均一に形成された有機化合物層に対してエネルギー線を照射して重合させ硬化させることによって、均一な膜厚の高分子有機化合物膜を形成することができる。
本発明において、所定温度に制御された希ガスの流量を制御して蒸気放出装置に供給するように構成されている場合には、容易に蒸気放出装置内の圧力を成膜室内の圧力より大きくすることができるので、蒸気放出装置と成膜室の圧力差を大きくして成膜速度を向上させることができる。
また、本発明において、真空槽内に、エネルギー線射出装置が配置される硬化室と、硬化室及び成膜室に連通されたバッファ室とが設けられ、硬化室及びバッファ室が、独立して制御可能な真空排気装置にそれぞれ接続されている場合には、蒸気放出装置及び成膜室間のみならず、成膜室、バッファ室、硬化室間において圧力差の大きい差動排気を行うことができるので、各室の圧力差をより大きくして成膜速度を向上させることができる。
図1(a)は、本発明に係る成膜装置の実施の形態の内部構成を示す全体図、図1(b)は、同成膜装置の要部構成図である。
また、図2(a)(b)は、同蒸気放出装置の蒸気放出部を示すもので、図2(a)は正面図、図2(b)は側面図である。
真空槽2の内部の中央部分近傍には、フィルム10と接触して搬送するための円柱形状の中央ローラ3が設けられ、この中央ローラ3の周囲に、フィルム繰出巻取室4、バッファ室5、成膜室6、硬化室7が設けられている。
そして、成膜室6内には、後述する蒸気放出装置8の蒸気放出部82が配置されている。
ここで、真空槽2の上部で硬化室7と連通する部分には、中央ローラ3方向にエネルギー線を射出するエネルギー線射出装置9が設けられている。
また、制御部18は、成膜室6を真空排気する第3真空排気装置60に電気的に接続され、成膜室6内に設けられた成膜圧力計21において得られた結果に基づいて成膜室6内の圧力を制御するように構成されている。
本実施の形態の有機化合物導入部22は、気化部81の上部に設けられ、液体状の有機化合物モノマー33を分散させ霧状にして噴霧する分散器22aを有している。
この気化器23は、例えば平板形状に形成された複数(本実施の形態では四つ)の第1〜第4気化部材24A、24B、24C、24Dを有している。
そして、第1〜第4気化部材24A〜24Dは、傾斜角度をそれぞれ変更調整できるように構成されている。
そして、このような構成を有する気化部81では、有機化合物モノマー33を搬送及び受け渡す際に有機化合物モノマー33を加熱して気化させるようになっている。
また、バッファ室5の圧力よりフィルム繰出巻取室4の圧力が大きくなるように第1及び第2真空排気装置40、50をそれぞれ動作させて差動排気を行う。
また、第2温度調整手段83を動作させて蒸気放出部82を所定の温度に温度制御する。
供給された有機化合物モノマー33は、第1気化部材24Aから第2気化部材24Bに受け渡され、第2気化部材24Bから第3気化部材24Cに受け渡され、さらに、第3気化部材24Cから第4気化部材24Dに受け渡され、この搬送及び受け渡しの際に有機化合物モノマー33が加熱され気化される。
最後に、フィルム繰出巻取室4内においてフィルム10に対して除電を行い、巻取ローラ42によってフィルム10を巻き取る。
例えば、蒸気放出装置の気化器については、上記実施の形態のものに限られず、低分子の有機化合物を気化できるものであれば、種々のタイプのものを用いることができる。
さらに、成膜対象物であるフィルムの種類、厚さ等についても、特に限定されることはなく、種々のフィルムに適用することができる。
2…真空槽
3…中央ローラ
4…フィルム繰出巻取室
5…バッファ室
6…成膜室
7…硬化室
8…蒸気放出装置
10…フィルム
18…制御部
19…第1温度調整手段
20…圧力計
21…成膜圧力計
22…有機化合物導入部
22a…分散器
23…気化器
24A、24B、24C、24D…第1〜第4気化部材
26、27、28、29…第3〜第6温度調整手段
30…モノマー供給源
33…有機化合物モノマー
35…希ガス供給源
36…マスフローコントローラ
37…有機化合物モノマーの蒸気
40、50、60、70、80…第1〜第5真空排気装置
41…原反ロール
81…気化部
82…蒸気放出部
85…蒸気放出口
O1、O2…回転軸線
Claims (3)
- 真空槽内において、原反ロールから繰り出されたフィルムを中央ローラと接触しつつ搬送し、当該フィルム上において有機化合物膜を形成する成膜装置であって、
前記真空槽内に設けられた成膜室内に配置され、有機化合物の蒸気を放出して前記中央ローラ上のフィルムに吹き付ける蒸気放出部を有する蒸気放出装置と、
前記中央ローラ上のフィルム上に形成された有機化合物層に対してエネルギー線を照射して当該有機化合物層を硬化させることで前記有機化合物膜を形成するエネルギー線射出装置とを有し、
前記蒸気放出装置及び前記成膜室が、独立して制御可能な真空排気装置にそれぞれ接続されるとともに、
前記蒸気放出装置内の圧力が前記成膜室内の圧力より大きく、かつ、前記蒸気放出装置内の圧力と前記成膜室内の圧力との差が一定になるように真空排気する成膜装置。 - 所定温度に制御された希ガスの流量を制御して前記蒸気放出装置に供給するように構成されている請求項1記載の成膜装置。
- 前記真空槽内に、前記エネルギー線射出装置が配置される硬化室と、前記硬化室及び前記成膜室に連通されたバッファ室とが設けられ、前記硬化室及び前記バッファ室が、独立して制御可能な真空排気装置にそれぞれ接続されている請求項1又は2のいずれか1項記載の成膜装置。
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JP2014522529A JP5764721B2 (ja) | 2012-06-29 | 2013-06-12 | 成膜装置 |
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JP2012147802 | 2012-06-29 | ||
JP2012147802 | 2012-06-29 | ||
JP2014522529A JP5764721B2 (ja) | 2012-06-29 | 2013-06-12 | 成膜装置 |
PCT/JP2013/066261 WO2014002773A1 (ja) | 2012-06-29 | 2013-06-12 | 成膜装置 |
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JP5764721B2 true JP5764721B2 (ja) | 2015-08-19 |
JPWO2014002773A1 JPWO2014002773A1 (ja) | 2016-05-30 |
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US (1) | US20150114291A1 (ja) |
EP (1) | EP2868769A4 (ja) |
JP (1) | JP5764721B2 (ja) |
KR (1) | KR20150008927A (ja) |
CN (1) | CN104379804B (ja) |
TW (1) | TWI519658B (ja) |
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US20220145443A1 (en) * | 2019-05-13 | 2022-05-12 | Ulvac, Inc. | Vapor deposition unit and vacuum vapor deposition apparatus provided with vapor deposition unit |
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JPS61216123A (ja) * | 1985-03-20 | 1986-09-25 | Hitachi Maxell Ltd | 磁気記録媒体の製造方法 |
EP0339844A3 (en) * | 1988-04-29 | 1991-01-16 | SPECTRUM CONTROL, INC. (a Delaware corporation) | Multi layer structure and process for making same |
US5876503A (en) * | 1996-11-27 | 1999-03-02 | Advanced Technology Materials, Inc. | Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions |
JP3502261B2 (ja) * | 1998-05-11 | 2004-03-02 | 松下電器産業株式会社 | 樹脂薄膜の製造方法 |
JP2004095677A (ja) * | 2002-08-29 | 2004-03-25 | Mitsubishi Heavy Ind Ltd | 基板処理装置 |
US20040149959A1 (en) * | 2003-01-31 | 2004-08-05 | Mikhael Michael G. | Conductive flakes manufactured by combined sputtering and vapor deposition |
JP4845385B2 (ja) * | 2004-08-13 | 2011-12-28 | 東京エレクトロン株式会社 | 成膜装置 |
US20060159844A1 (en) * | 2005-01-18 | 2006-07-20 | Fuji Photo Film Co., Ltd. | Process and apparatus for producing magnetic recording medium |
JP5291875B2 (ja) * | 2006-11-01 | 2013-09-18 | 富士フイルム株式会社 | プラズマ装置 |
JP5319373B2 (ja) * | 2009-04-10 | 2013-10-16 | 富士フイルム株式会社 | ガスバリアフィルムおよびガスバリアフィルムの製造方法 |
JP2010247369A (ja) * | 2009-04-13 | 2010-11-04 | Fujifilm Corp | ガスバリア積層体の製造方法およびガスバリア積層体 |
JP5694023B2 (ja) * | 2011-03-23 | 2015-04-01 | 小島プレス工業株式会社 | 積層構造体の製造装置 |
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JPWO2014002773A1 (ja) | 2016-05-30 |
TW201413015A (zh) | 2014-04-01 |
CN104379804B (zh) | 2016-03-09 |
WO2014002773A1 (ja) | 2014-01-03 |
EP2868769A4 (en) | 2016-03-02 |
KR20150008927A (ko) | 2015-01-23 |
CN104379804A (zh) | 2015-02-25 |
EP2868769A1 (en) | 2015-05-06 |
US20150114291A1 (en) | 2015-04-30 |
TWI519658B (zh) | 2016-02-01 |
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