TWI693723B - 太陽電池元件 - Google Patents
太陽電池元件 Download PDFInfo
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- TWI693723B TWI693723B TW107142396A TW107142396A TWI693723B TW I693723 B TWI693723 B TW I693723B TW 107142396 A TW107142396 A TW 107142396A TW 107142396 A TW107142396 A TW 107142396A TW I693723 B TWI693723 B TW I693723B
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- Taiwan
- Prior art keywords
- protective layer
- layer
- solar cell
- semiconductor substrate
- cell element
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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| JP2017-230825 | 2017-11-30 | ||
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| CN (1) | CN111492492A (ja) |
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| US20110272024A1 (en) * | 2010-04-13 | 2011-11-10 | Applied Materials, Inc. | MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS |
| TW201547044A (zh) * | 2014-03-19 | 2015-12-16 | Inst Solarenergieforschung | 在太陽能電池後側之導電聚合物／Ｓｉ之界面 |
| JP6203990B1 (ja) * | 2016-02-26 | 2017-09-27 | 京セラ株式会社 | 太陽電池素子 |
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| JP3670527B2 (ja) * | 1999-08-23 | 2005-07-13 | 京セラ株式会社 | 光半導体素子収納用パッケージ |
| JP2004276442A (ja) * | 2003-03-17 | 2004-10-07 | Sumika Plastech Co Ltd | 成形体 |
| JP2005039110A (ja) * | 2003-07-17 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 回路基板 |
| US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
| JP2012216732A (ja) * | 2011-04-01 | 2012-11-08 | Mitsubishi Electric Corp | 薄膜太陽電池基板の製造方法および薄膜太陽電池の製造方法 |
| JP2013051143A (ja) * | 2011-08-31 | 2013-03-14 | Fujikura Ltd | 光電変換素子用電極、及び、光電変換素子 |
| WO2013031939A1 (ja) * | 2011-08-31 | 2013-03-07 | 株式会社フジクラ | 光電変換素子用電極、その製造方法及び、光電変換素子 |
| JP2013106491A (ja) * | 2011-11-16 | 2013-05-30 | Tdk Corp | 高分子アクチュエータ |
| KR101890324B1 (ko) * | 2012-06-22 | 2018-09-28 | 엘지전자 주식회사 | 태양 전지 모듈 및 이에 적용되는 리본 결합체 |
| JP2014146766A (ja) * | 2013-01-30 | 2014-08-14 | Mitsubishi Electric Corp | 太陽電池の製造方法及び太陽電池 |
| JP2014154656A (ja) * | 2013-02-07 | 2014-08-25 | Dainippon Screen Mfg Co Ltd | 結晶シリコン型太陽電池、およびその製造方法 |
| JP2014157871A (ja) * | 2013-02-14 | 2014-08-28 | Hitachi Chemical Co Ltd | パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法 |
| JP2015153846A (ja) * | 2014-02-13 | 2015-08-24 | 太陽誘電株式会社 | 電気化学デバイス及び製造方法 |
| JP6280231B2 (ja) * | 2014-09-22 | 2018-02-14 | 京セラ株式会社 | 太陽電池素子 |
| JP6495713B2 (ja) * | 2015-03-30 | 2019-04-03 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
| JP2017069247A (ja) * | 2015-09-28 | 2017-04-06 | 京セラ株式会社 | 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法 |
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- 2018-11-28 TW TW107142396A patent/TWI693723B/zh active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110272024A1 (en) * | 2010-04-13 | 2011-11-10 | Applied Materials, Inc. | MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS |
| TW201547044A (zh) * | 2014-03-19 | 2015-12-16 | Inst Solarenergieforschung | 在太陽能電池後側之導電聚合物／Ｓｉ之界面 |
| JP6203990B1 (ja) * | 2016-02-26 | 2017-09-27 | 京セラ株式会社 | 太陽電池素子 |
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| JPWO2019107211A1 (ja) | 2019-12-12 |
| TW201926731A (zh) | 2019-07-01 |
| WO2019107211A1 (ja) | 2019-06-06 |
| JP6539010B1 (ja) | 2019-07-03 |
| CN111492492A (zh) | 2020-08-04 |
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