TWI693478B - Maskless exposure device and exposure method - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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Abstract
得到一種無罩曝光裝置,該無罩曝光裝置係對長條基板,不會發生圖案之線的斷線或蛇行,並可對連續之長條圖案高精度地進行曝光。 A maskless exposure device is obtained. The maskless exposure device is capable of exposing continuous substrates without interruption or meandering of pattern lines, and can expose continuous elongated patterns with high accuracy.
無罩曝光裝置包括:含有光調變元件陣列之曝光手段;基板固持手段,係將長條基板之長度方向的一部分固持成平面狀;相對移動手段,係在該長條基板之長度方向,使該曝光手段與基板固持手段相對移動;資料記憶手段,係記憶在該長條基板之長度方向分割對該長條基板之長條曝光圖案資料的分割曝光圖案資料;以及曝光控制手段,係在藉該相對移動手段使該曝光手段與基板固持手段相對移動下,根據該資料記憶手段所記憶之該分割曝光圖案資料,使該曝光手段對該長條基板進行曝光。 The maskless exposure device includes: exposure means containing an array of light modulating elements; substrate holding means, which holds a part of the longitudinal direction of the elongated substrate in a planar shape; relative movement means, which is in the longitudinal direction of the elongated substrate, so that The exposure means moves relative to the substrate holding means; the data memory means memorizes the divided exposure pattern data that divides the stripe exposure pattern data of the stripe substrate in the length direction of the stripe substrate; and the exposure control means borrows The relative movement means moves the exposure means and the substrate holding means relatively, and according to the divided exposure pattern data memorized by the data memory means, causes the exposure means to expose the long substrate.
Description
本發明係有關於一種不使用光罩,直接繪圖而形成長條圖案之無罩曝光裝置及曝光方法。 The invention relates to a maskless exposure device and an exposure method for directly drawing and forming a long pattern without using a photomask.
在汽車等之大型的機械,將電氣裝置部(控制電路板等)設置於複數處。在電氣裝置部間之信號線或電源線,以往常使用成束之複數條被被覆之電線(被覆電線)。另一方面,因為被覆電線之重量重,所以嘗試使用藉FPC基板之配線,替代被覆電線。若是FPC基板,將多條配線集中成既定平面形狀,厚度係比被覆電線薄,又因為彎曲自如,所以配線之自由度增加。 In large machines such as automobiles, electrical device parts (control circuit boards, etc.) are installed in plural places. In the past, signal wires or power wires between electrical device parts have conventionally used bundled plural covered wires (covered wires). On the other hand, because the weight of the covered electric wire is heavy, it is tried to use the wiring by the FPC board instead of the covered electric wire. In the case of an FPC board, multiple wires are concentrated into a predetermined planar shape, the thickness is thinner than that of the covered wire, and the flexibility of the wires increases the degree of freedom of wiring.
[專利文獻1]日本特開2000-227661號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2000-227661
[專利文獻2]日本特開2005-300804號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2005-300804
可是,與小形之FPC基板相比,在大形之FPC基板,尤其長條之FPC基板的曝光裝置具有困難點。尤其,使用 光罩之接觸式曝光裝置係需要準備與長條之圖案的整個面對應之光罩,因為必須一面更換好幾片之光罩一面進行曝光,所以具有曝光裝置變成大形、或生產力低的問題。 However, compared to small FPC substrates, exposure devices for large FPC substrates, particularly long FPC substrates, have difficulties. In particular, use The contact exposure device of the photomask needs to prepare a photomask corresponding to the entire surface of the long pattern. Since several photomasks must be replaced while performing exposure, there is a problem that the exposure device becomes large or the productivity is low.
另一方面,作為不使用光罩,而將圖案曝光於FPC基板的裝置,已知一種輥對輥之無罩曝光裝置,該無罩曝光裝置係在曝光部具備DMD(Digital Micro-mirror Device)等之光調變元件陣列。在這種無罩曝光裝置的情況,為了得到曝光精度,一般使用曝光工作台在保持長條基板之平面的狀態進行曝光(專利文獻1)。專利文獻1係揭示一種輥對輥之無罩曝光裝置,該無罩曝光裝置係在將長條基板(工件)吸附並固定於曝光工作台,將曝光部與長條工件表面之光軸方向的距離保持定值之狀態,一面使光調變元件陣列與長條工件相對移動,一面將圖案光投影於長條工件表面的感光劑層。可是,在如專利文獻1所示之輥對輥的無罩曝光裝置,因為對超過工作台之大小的長條圖案無法進行曝光,所以可曝光之FPC基板的最大尺寸受到工作台之大小限制。
On the other hand, as an apparatus for exposing a pattern to an FPC substrate without using a photomask, a roll-to-roll hoodless exposure apparatus is known. The hoodless exposure apparatus includes a DMD (Digital Micro-mirror Device) in an exposure section Array of light modulation components. In the case of such a maskless exposure apparatus, in order to obtain exposure accuracy, an exposure table is generally used for exposure while maintaining the plane of the elongated substrate (Patent Document 1).
另一方面,專利文獻2係未使用工作台之輥對輥之無罩曝光裝置。因為在搬運中對被架設於2支輥並被連續地搬運之長條工件連續地進行曝光,所以FPC基板的最大尺寸不會受到工作台之大小限制。可是,在如專利文獻2所示之不具有曝光工作台的無罩曝光裝置,因為難在保持工件之平面性的狀態進行曝光,所以在曝光精度上具有問題。
On the other hand,
本發明係根據以上之問題意識,其目的在於得到一種無罩曝光裝置及曝光方法,該無罩曝光裝置係對長條基 板,不會發生圖案之線的斷線或蛇行,並可對連續之長條圖案高精度地進行曝光。 The present invention is based on the above problem awareness, and its object is to obtain a maskless exposure device and an exposure method, the maskless exposure device The board will not be broken or meandered, and it can expose the continuous long pattern with high precision.
本發明係根據如下之著眼點所完成者,在將長條圖案曝光於基板固持手段(曝光工作台)所固持之長條基板時,根據已曝光之長條圖案之一部分的位置,調整長條圖案之剩下之部分(或長條圖案之剩下的一部分)的曝光位置,藉此,形成連續地連接之圖案。 The present invention is accomplished based on the following points: when exposing a long pattern to a long substrate held by a substrate holding means (exposure table), the long pattern is adjusted according to the position of a part of the exposed long pattern The exposure position of the remaining part of the pattern (or the remaining part of the long pattern), thereby forming a continuously connected pattern.
本發明之無罩曝光裝置的特徵為包括:含有光調變元件陣列之曝光手段;基板固持手段,係將長條基板之長度方向的一部分固持成平面狀;相對移動手段,係在該長條基板之長度方向,使該曝光手段與基板固持手段相對移動;資料記憶手段,係記憶在該長條基板之長度方向分割對該長條基板之長條曝光圖案資料的分割曝光圖案資料;以及曝光控制手段,係在藉該相對移動手段使該曝光手段與基板固持手段相對移動下,根據該資料記憶手段所記憶之該分割曝光圖案資料,使該曝光手段對該長條基板進行曝光。 The maskless exposure device of the present invention is characterized by including: an exposure means containing an array of light modulating elements; a substrate holding means that holds a part of the longitudinal direction of the elongated substrate in a plane shape; a relative movement means is located on the elongated The longitudinal direction of the substrate moves the exposure means and the substrate holding means relatively; the data memory means memorizes the divided exposure pattern data that divides the long exposure pattern data of the elongated substrate in the longitudinal direction of the elongated substrate; and the exposure The control means causes the exposure means to expose the elongated substrate according to the divided exposure pattern data memorized by the data storage means under the relative movement means to move the exposure means and the substrate holding means relatively.
該曝光控制手段係在較佳之具體例,根據一個該分割曝光圖案資料,藉該曝光手段將被曝光於該長條基板之分割圖案的位置作為基準,調整接著曝光之未曝光之該分割曝光圖案資料的曝光位置,將連續地連接之長條圖案形成於該長條基板上。 The exposure control means is in a preferred embodiment. According to one piece of divided exposure pattern data, the position of the divided pattern exposed on the elongated substrate is used as a reference by the exposure means to adjust the unexposed divided exposure pattern that is subsequently exposed At the exposure position of the data, a continuously connected strip pattern is formed on the strip substrate.
相鄰之該分割曝光圖案資料係長條基板之長度方向的端部重疊較佳。 The adjacent divided exposure pattern data is preferably overlapped in the longitudinal direction of the long substrate.
該曝光控制手段係具備標記位置偵測手段較佳,該標記位置偵測手段係偵測該曝光手段曝光形成於該長條基板之圖案對準標記的位置。 The exposure control means is preferably provided with a mark position detection means, which detects the position of the pattern alignment mark formed by the strip substrate exposed by the exposure means.
該曝光位置控制手段係更具備基板端面偵測手段較佳,該基板端面偵測手段係偵測該長條基板之沿著相對移動方向的至少一方之端面的位置。 Preferably, the exposure position control means further includes a substrate end face detection means. The substrate end face detection means detects the position of at least one end face of the elongated substrate along the relative movement direction.
而且,該曝光位置控制手段係具備攝像手段,該攝像手段係藉由在同一視野捕捉該圖案對準標記與該基板端面,兼具該標記位置偵測手段與該基板端面偵測手段。 Moreover, the exposure position control means is provided with an imaging means, which captures the pattern alignment mark and the substrate end face in the same field of view, and has both the mark position detection means and the substrate end face detection means.
該資料記憶手段係實際上根據該長條基板之搬運,切換該分割曝光手段所曝光之該分割曝光圖案資料。 The data memory means actually switches the divided exposure pattern data exposed by the divided exposure means according to the transportation of the long substrate.
本發明之無罩曝光方法係藉無罩曝光裝置將連續地連接之長條圖案形成於該長條基板上,該無罩曝光裝置係包括:曝光手段,係含有產生曝光圖案之光調變元件陣列;基板固持手段,係將長條基板之長度方向的一部分固持成平面狀;以及相對移動手段,係在該長條基板之長度方向,使該曝光手段與基板固持手段相對移動;該無罩曝光方法的特徵為具有:形成步驟,係形成在該長條基板之長度方向分割對該長條基板之長條曝光圖案資料的複數個分割曝光圖案資料;曝光步驟,係在藉該相對移動手段使該曝光手段與基板固持手段相對移動下,將該複數個分割曝光圖案資料中之所選擇的任一個曝光於該長條基板;以及曝光步驟,係將根據該一個所選擇之分割曝光圖案資料藉該曝光手段曝光於該長條基板之分割圖案的位置作為基準,調整接著曝光之未曝光之分割曝光圖案資料的 曝光位置,將連續地連接之長條圖案曝光於該長條基板上。 The maskless exposure method of the present invention is to form a continuously connected strip pattern on the strip substrate by a maskless exposure device. The maskless exposure device includes: an exposure means including a light modulating element that generates an exposure pattern Array; substrate holding means, which holds a part of the longitudinal direction of the elongated substrate in a planar shape; and relative movement means, which moves the exposure means and the substrate holding means relatively in the longitudinal direction of the elongated substrate; the coverless The exposure method is characterized by a forming step, which is to form a plurality of divided exposure pattern data that divides the strip exposure pattern data of the strip substrate in the longitudinal direction of the strip substrate; the exposure step uses the relative movement means Moving the exposure means and the substrate holding means relatively, exposing any selected one of the plurality of divided exposure pattern data to the elongated substrate; and the exposure step is based on the one selected divided exposure pattern data Using the exposure means to expose the position of the divided pattern of the long substrate as a reference, adjust the unexposed divided exposure pattern data of the subsequent exposure The exposure position exposes the continuously connected strip pattern on the strip substrate.
在此無罩曝光方法,亦相鄰之該分割曝光圖案資料係該長條基板之長度方向的端部重疊較佳。 In the maskless exposure method here, the divided exposure pattern data adjacent to each other are preferably overlapped in the longitudinal direction of the elongated substrate.
若依據本發明之無罩曝光裝置及曝光方法,對長條基板,不會發生圖案之線的斷線或蛇行,並可對連續之長條圖案高精度地進行曝光。 According to the maskless exposure device and the exposure method of the present invention, the long substrate will not be broken or meandered, and continuous long patterns can be exposed with high accuracy.
1‧‧‧曝光裝置 1‧‧‧Exposure device
2‧‧‧架座 2‧‧‧Bracket
10‧‧‧供給部 10‧‧‧Supply Department
11‧‧‧供給捲盤 11‧‧‧Supply reel
12、14‧‧‧導輥 12, 14‧‧‧Guide roller
13‧‧‧供給側張力輥 13‧‧‧Supply side tension roller
15‧‧‧供給側制動輥 15‧‧‧Supply side brake roller
16‧‧‧前後端位置感測器 16‧‧‧Front and rear position sensor
20‧‧‧捲繞部 20‧‧‧winding section
21‧‧‧捲繞捲盤 21‧‧‧winding reel
22、24‧‧‧導輥 22、24‧‧‧Guide roller
23‧‧‧捲繞側張力輥 23‧‧‧winding side tension roller
25‧‧‧捲繞側制動輥 25‧‧‧winding side brake roller
30‧‧‧曝光部 30‧‧‧Exposure Department
31‧‧‧曝光工作台(基板固持手段) 31‧‧‧Exposure table (substrate holding means)
32‧‧‧工作台移動部(相對移動手段) 32‧‧‧Mobile part of table (relative moving means)
33‧‧‧導軌 33‧‧‧rail
34‧‧‧升降部 34‧‧‧ Lifting Department
41‧‧‧對準相機 41‧‧‧Aim at the camera
51‧‧‧曝光單元(曝光手段) 51‧‧‧Exposure unit (exposure means)
52‧‧‧曝光單元驅動部 52‧‧‧Exposure unit driver
60‧‧‧曝光裝置控制部 60‧‧‧Exposure device control unit
60a‧‧‧影像處理部 60a‧‧‧Image Processing Department
60b‧‧‧標記位置偵測手段 60b‧‧‧Mark position detection method
60c‧‧‧基板端面偵測手段 60c‧‧‧Substrate detection method
60d‧‧‧分割曝光資料製作部 60d‧‧‧ Split exposure data production department
60e‧‧‧資料記憶手段 60e‧‧‧memory means
60f‧‧‧曝光控制手段 60f‧‧‧Exposure control method
61‧‧‧監視器 61‧‧‧Monitor
W‧‧‧長條基板(感光性基板) W‧‧‧Long substrate (photosensitive substrate)
A‧‧‧長條基板W上之第1次的曝光起始位置(點A) A‧‧‧The first exposure start position on the long substrate W (point A)
A1‧‧‧長條基板W上之第1次的曝光起始位置(點A1) A1‧‧‧The first exposure start position on the long substrate W (point A1)
B‧‧‧長條基板W上之曝光結束位置(點B) B‧‧‧End position of exposure on the strip substrate W (point B)
DE‧‧‧被曝光區域(在一次之曝光步驟可曝光之區域) DE‧‧‧ exposed area (area that can be exposed in one exposure step)
P‧‧‧長條曝光圖案資料 P‧‧‧Long exposure pattern data
DP1~DP5‧‧‧分割曝光圖案資料 DP1~DP5‧‧‧‧Exposure pattern data
AO1~AO4‧‧‧重疊區間 AO1~AO4‧‧‧‧overlap
MP‧‧‧圖案對準標記 MP‧‧‧ Pattern alignment mark
AC‧‧‧對準相機41之視野
AC‧‧‧Focus on
AE‧‧‧曝光單元51之曝光範圍
AE‧‧‧Exposure range of
EW‧‧‧基板端面 EW‧‧‧Substrate end face
PL‧‧‧繪線圖案(分割圖案) PL‧‧‧Line drawing pattern (split pattern)
第1圖係表示應用本發明之無罩曝光裝置之輥對輥方式的曝光裝置之一實施形態的正視圖。 Fig. 1 is a front view showing an embodiment of a roll-to-roll type exposure apparatus to which the coverless exposure apparatus of the present invention is applied.
第2圖係包含第1圖之曝光裝置的對準相機及曝光工作台之部分的平面圖。 FIG. 2 is a plan view of the exposure device of FIG. 1 that is aligned with the camera and the exposure table.
第3圖係包含第1圖之曝光裝置的曝光單元及對準相機之部分的平面圖。 FIG. 3 is a plan view including the exposure unit of the exposure device of FIG. 1 and a part directed toward the camera.
第4圖係本發明之無罩曝光裝置的方塊圖。 Fig. 4 is a block diagram of the maskless exposure apparatus of the present invention.
第5圖係使用本發明之無罩曝光裝置畫在長條基板之長條曝光圖案資料之一例的平面圖。 FIG. 5 is a plan view of an example of the long exposure pattern data drawn on the long substrate using the maskless exposure device of the present invention.
第6圖係表示在長條基板之長度方向將第5圖之長條曝光圖案資料分割成5部分之分割曝光圖案資料的平面圖。 FIG. 6 is a plan view showing that the strip exposure pattern data of FIG. 5 is divided into 5 parts of divided exposure pattern data in the longitudinal direction of the strip substrate.
第7圖(1)、(2)、(3)、(4)、(5)、(6)係根據如第6圖所示分割的分割曝光圖案資料對長條基板進行分割曝光時之曝光單元及對對準相機之基板與曝光工作台之動作例的平面圖。 Figure 7 (1), (2), (3), (4), (5), and (6) are the exposures of the long substrate when divided exposure is performed based on the divided exposure pattern data divided as shown in Figure 6 A plan view of an example of the operation of the unit and the substrate aligned with the camera and the exposure table.
第1圖表示應用本發明之無罩曝光裝置之輥對輥方式的曝光裝置1之基本構成。此曝光裝置1係從長條基板(工件)W之搬運方向M的上游側往下游側依序包括:供給部10,係供給長條基板W;曝光部30,係將圖案曝光於長條基板W的表面而形成電子電路;以及捲繞部20,係回收已曝光的長條基板W。
Fig. 1 shows the basic structure of a roll-to-roll
長條基板W係利用被塗布光阻劑等之感光材料的包銅積層板等之片狀的基板,並具有數十~數百公尺的長度。藉由在曝光後經由顯像或蝕刻、切割等的步驟,成為FPC基板的基材。 The long substrate W is a sheet-like substrate using a copper-clad laminate or the like coated with a photosensitive material such as a photoresist, and has a length of tens to hundreds of meters. After exposure, through the steps of development, etching, cutting, etc., it becomes the base material of the FPC substrate.
供給部10係構成工件供給系統,該工件供給系統係從長條基板W之搬運方向M的上游側往下游側依序包括供給捲盤11、導輥12、供給側張力輥13、導輥14、供給側制動輥15以及前後端位置感測器16,並用以將長條基板W供給至曝光部30。捲繞部20係構成工件捲繞系統,該工件捲繞系統係從長條基板W之搬運方向M的上游側往下游側依序包括捲繞側制動輥25、導輥24、捲繞側張力輥23、導輥22以及捲繞捲盤21,並用以捲繞在曝光部30所曝光之長條基板W。
The
曝光部30被配置於供給側制動輥15與捲繞側制動輥25之間。將在供給側制動輥15與捲繞側制動輥25之間移動之長條基板W的移動方向(搬運方向M)定義為X方向,將與長條基板W正交之方向(厚度方向)定義為Z方向,將與X方向及Z方向正交之方向定義為Y方向。曝光部30包括曝光工作台(基板固持手段)31、一對對準相機41(參照第2圖)以及
曝光單元(曝光手段)51。
The
曝光單元51係具備複數個曝光頭(未圖示),並規則地被配置於從長條基板W向鉛垂上方相距既定距離的位置。對各曝光頭配置光源及照明光學系統(未圖示),從光源所放射之光係分別經由對應之照明光學系統被導引至對應的曝光頭。各曝光頭包括二維地排列複數個微反射鏡之DMD(Digital Micro-mirror Device)、與將DMD之像成像於長條基板上的成像光學系統。曝光單元51係在曝光範圍AE可對像進行曝光(參照第3圖)。
The
使用DMD對圖案進行多重曝光的技術係揭示於例如特開2003-084444號公報,係被廣泛地實用化之周知的技術。又,使用複數個頭描繪一個案的技術係揭示於例如特開2003-195512號公報,係被廣泛地實用化之周知的技術。 The technique of multiple exposure of a pattern using DMD is disclosed in, for example, Japanese Patent Application Laid-Open No. 2003-084444, and is a well-known technique widely used in practice. In addition, a technique for drawing a case using a plurality of headers is disclosed in, for example, Japanese Unexamined Patent Publication No. 2003-195512, and is a well-known technique that has been widely put into practical use.
曝光單元(曝光手段)51係在製作在長條基板W之長度方向將曝光於長條基板W上之長條曝光圖案資料分割成複數個的分割曝光圖案資料後,將該分割曝光圖案資料依序曝光於長條基板W上。第5圖表示長條曝光圖案資料P之具體例,第6圖表示在長條基板W之長度方向將此長條曝光圖案資料P分割成5部分的分割曝光圖案資料DPn(n=1至5)。長條曝光圖案資料P係如圖所示,例如是2000(X)×250(Y)mm之大小的配線圖案。配線的寬度或間隔例如是2mm又,圖係舉例表示僅配線之圖案,但是亦可將用以組裝電性元件之電路圖案等設置於長條圖案中。 The exposure unit (exposure means) 51 is formed by dividing the strip exposure pattern data exposed on the strip substrate W into a plurality of split exposure pattern data after being produced in the length direction of the strip substrate W, and then dividing the split exposure pattern data according to Sequence exposure on the long substrate W. FIG. 5 shows a specific example of the strip exposure pattern data P, and FIG. 6 shows the split exposure pattern data DPn (n=1 to 5) that divides the strip exposure pattern data P into 5 parts in the length direction of the strip substrate W ). The long exposure pattern data P is as shown in the figure, for example, a wiring pattern with a size of 2000 (X) × 250 (Y) mm. The width or interval of the wiring is, for example, 2 mm. The figure shows an example of a wiring-only pattern. However, a circuit pattern or the like for assembling electrical components may be provided in a long pattern.
分割曝光圖案資料DP1至DP5係如第6圖所示, 具有重疊區間AO1至重疊區間AO4,在各重疊區間AO1至重疊區間AO4,在長條基板W之長度方向所延伸之繪線圖案PL的Y方向兩側,包含一對圖案對準標記MP。 The divided exposure pattern data DP1 to DP5 are shown in Figure 6, There are overlapping sections AO1 to AO4, and each of the overlapping sections AO1 to AO4 includes a pair of pattern alignment marks MP on both sides in the Y direction of the line drawing pattern PL extending in the longitudinal direction of the long substrate W.
曝光工作台31係吸附(例如真空吸附)長條基板W的背面,並固持成平面狀,可在X方向及Z方向移動自如。即,在架座2上,具備在X方向延伸之導軌33,並將使曝光工作台31升降的升降部34支撐於工作台移動部32,工作台移動部32係被導軌33支撐成移動自如。曝光工作台31係藉升降部34,在與長條基板W之背面接觸的上端位置、與和長條基板W之背面分開的下端位置之間升降。工作台移動部32係可在X方向正反向(下游方向與上游方向)地移動。在第1圖以二點鏈線表示曝光工作台31之可移動的軌跡31M。工作台移動部32構成在長條基板W之長度方向使曝光工作台31與曝光單元51進行相對移動的相對移動手段。曝光工作台31一次可吸附固持長條基板W的範圍(面積)例如是620(X)×520(Y)mm。
The exposure table 31 sucks (for example, vacuum sucks) the back surface of the long substrate W and holds it in a planar shape, and can move freely in the X direction and the Z direction. That is, the
第2圖係從基板表面側觀察曝光工作台31吸附固持長條基板W之狀態的圖。符號DE表示在一次之曝光步驟可曝光的區域(即,分割曝光圖案資料DP1至DP5的一個區域)。符號A係在第1次之曝光步驟的曝光起始位置,符號B係在第1次之曝光步驟的曝光結束位置。
FIG. 2 is a view of the state where the
一對對準相機41係被設置於比曝光單元51上游側,並拍攝被曝光形成於長條基板W的圖案對準標記MP。各對準相機41所拍攝之影像係藉影像處理部60a(參照第4圖)進行影像處理後,藉標記位置偵測手段60b取得圖案對準標記
MP的位置資訊。
A pair of
對準相機41係在本實施形態,不僅拍攝圖案對準標記MP,亦將基板端面EW看成一種標記來拍攝,並具備檢測出端面之位置的基板端面偵測手段60c。若圖案對準標記MP與基板端面EW同時進入對準相機41之視野AC內,在Y方向不移動對準相機41,亦可拍攝圖案對準標記MP與基板端面EW(第5圖),但是亦可使對準相機41在Y方向移動,拍攝圖案對準標記MP與基板端面EW。此處,對準相機41、影像處理部60a以及基板端面偵測手段60c構成偵測長條基板W之沿著相對移動方向之至少一方的端面之位置的基板端面偵測手段。對準相機41係藉由在同一視野CA捕捉圖案對準標記MP與基板端面EW,構成兼具標記位置偵測手段60b與基板端面偵測手段60c之攝像手段。
In this embodiment, the
藉由影像處理部60a(標記位置偵測手段)取得基板端面EW的位置資訊,可防止曝光之分割曝光圖案資料DP1至DP5的扭曲(蛇行)或分割曝光圖案資料DP1至DP5被斜曝光所造成之往工件外的超出。具體而言,例如在決定分割曝光圖案資料DP1至DP5的曝光位置時,分割曝光圖案資料DP1至DP5之X方向修正量係根據一對圖案對準標記MP之至少一方之圖案對準標記MP的位置資訊所決定,Y方向修正量係根據至少一方之基板端面EW的位置資訊或至少一方之圖案對準標記MP的位置資訊所決定。
By obtaining the position information of the substrate end surface EW by the
基板端面偵測手段60c(及標記位置偵測手段60b)係可檢測出基板端面EW(長條基板W之長度方向)對X方向的 夾角,作為θ方向修正量。例如,將基板端面EW(長條基板W之長度方向)對X方向平行的情況檢測成0°。所檢測出之θ方向修正量係可藉由改變曝光單元51(DMD)之Y方向的繪圖時序來調整。 The substrate end face detection means 60c (and the mark position detection means 60b) can detect the X direction of the substrate end face EW (the longitudinal direction of the long substrate W) The angle is used as the θ direction correction amount. For example, the case where the substrate end surface EW (the longitudinal direction of the long substrate W) is parallel to the X direction is detected as 0°. The detected θ-direction correction amount can be adjusted by changing the Y-direction drawing timing of the exposure unit 51 (DMD).
第4圖係本發明之無罩曝光裝置的控制方塊圖。曝光裝置1更包括供給部10、捲繞部20及曝光部30、以及統籌地控制這些構件的曝光裝置控制部60。曝光裝置控制部60包括影像處理部60a、記憶長條曝光圖案資料之資料記憶手段60e、以及從該長條曝光圖案資料製作實際曝光所需之分割曝光圖案資料的分割曝光資料製作部60d。影像處理部60a具備從對準相機41所拍攝之影像資料檢圖案位置資訊(分割曝光圖案資料DPn之X方向位置、Y方向位置以及傾斜角θ)的功能。曝光裝置1(曝光部30)更具備顯示對準相機41所拍攝之影像資料的監視器61。使用者係可觀看監視器61之顯示,識別該對準。
Fig. 4 is a control block diagram of the maskless exposure apparatus of the present invention. The
曝光裝置1係在供給部10側包括對供給捲盤11進行驅動控制之供給捲盤驅動部11a與對供給側制動輥15進行驅動控制之制動輥驅動部15a,並在捲繞部20側包括對捲繞捲盤21進行驅動控制之捲繞捲盤驅動部21a與對捲繞側制動輥25進行驅動控制之制動輥驅動部25a。曝光裝置控制部60係經由供給捲盤驅動部11a及捲繞捲盤驅動部21a對供給捲盤11及捲繞捲盤21賦與正反之轉動力,而正反地移動長條基板W。曝光裝置控制部60係經由制動輥驅動部15a及25ba,藉一對供給側制動輥15及一對捲繞側制動輥25夾壓長條基板
W,並在長條基板W之X方向移動產生制動力(負載)。又,使一對供給側制動輥15及一對捲繞側制動輥25從長條基板W離開,而解除制動力(負載)。曝光裝置控制部60係從前後端位置感測器16的輸出,偵測長條基板W之X方向(長度方向)的前端與後端以及通過這些前後端。
The
曝光部30具備根據藉分割曝光資料製作部60d所產生之分割曝光圖案資料驅動曝光單元51的曝光單元驅動部52。曝光部30包括在曝光裝置控制部60之控制下,驅動工作台移動部32的工作台移動驅動部32a、驅動升降部34而使曝光工作台31升降移動的升降部驅動部34a、以及在曝光工作台31的表面吸附或放開長條基板W的吸附驅動部31a。
The
分割曝光資料製作部60d係根據資料記憶手段60e所記憶之長條曝光圖案資料P,製作一次份量之曝光步驟所需的分割曝光圖案資料DPn。其中,n係2以上的正整數,最大值成為長條曝光圖案資料P的分割數。分割曝光資料製作部60d係在從長條曝光圖案資料P製作分割曝光圖案資料DP時,以在重疊區間AO分割曝光圖案重複的方式製作分割曝光圖案資料DPn。曝光單元驅動部52係根據此分割曝光圖案資料DPn,驅動曝光單元51,將分割曝光圖案曝光於長條基板W。
The divided exposure data production unit 60d produces the divided exposure pattern data DPn required for the exposure step of one portion based on the long exposure pattern data P memorized by the data memory means 60e. Among them, n is a positive integer of 2 or more, and the maximum value becomes the number of divisions of the long exposure pattern data P. The divided exposure data creation unit 60d creates the divided exposure pattern data DPn so that the divided exposure pattern data DP is created from the long exposure pattern data P in such a manner that the divided exposure pattern overlaps in the overlap interval AO. The exposure
曝光裝置控制部60具備曝光控制手段60f(第4圖),該曝光控制手段60f係在切換分割曝光圖案資料DPn下,在複數次進行曝光動作,藉此,將連續地相連接之一個長條繪線圖案PL曝光於長條基板W。曝光裝置控制部60(曝光控制手段60f)係經由以上之驅動部11a與15a、21a與25a、31a與
32a及34a,對供給部10、捲繞部20以及曝光部30之各構成元件進行驅動控制。
The exposure
描繪資料上之圖案對準標記MP係亦可預先包含長條曝光圖案資料P,亦可作成在製作分割曝光圖案資料DPn時自動地添寫圖案對準標記MP。 The pattern alignment mark MP on the drawing data may include the stripe exposure pattern data P in advance, or the pattern alignment mark MP may be automatically added when the divided exposure pattern data DPn is produced.
在圖上圖案對準標記MP係以圓形之標記表示,但是亦可是十字形等周知的位置對準用標記。 The pattern alignment mark MP on the drawing is represented by a round mark, but it may also be a well-known position alignment mark such as a cross.
其次,根據第7圖,說明根據本發明之無罩曝光裝置及曝光方法之曝光動作的一例。在第7圖,將X方向之左方向定義為下游方向,將其右方向定義為上游方向。 Next, based on FIG. 7, an example of the exposure operation of the maskless exposure apparatus and exposure method according to the present invention will be described. In Fig. 7, the left direction in the X direction is defined as the downstream direction, and the right direction is defined as the upstream direction.
步驟1:位於準備位置之曝光工作台31從下降位置上升至長條基板W固持位置,並吸附固定長條基板W之一部分的背面(第7圖(1))。供給側制動輥15與捲繞側制動輥25係離開長條基板W而解除對長條基板W之移動的制動力。在此狀態,曝光工作台31對曝光單元51在下游方向移動,曝光單元51係根據分割曝光圖案資料DPn(DP1)將繪線圖案(分割圖案)PL描繪(曝光)於長條基板W上,將圖案對準標記MP曝光於繪線圖案PL之上游側端部附近的兩側。依此方式,分割曝光圖案資料DPn(DP1)及圖案對準標記MP之曝光結束時,曝光工作台31停在X方向曝光結束位置(第7圖(2))。已被曝光之圖案對準標記MP係利用光阻劑之自行著色作用,形成為可拍攝之像。
Step 1: The
曝光單元51描繪(曝光)分割曝光圖案資料DPn(DP1)的時序係根據曝光工作台31從起始位置在下游方向
所移動的距離受到控制。曝光起始點(與基板W之搬運方向M正交的曝光起始線)A係長條基板W上之第1次的曝光起始位置,曝光結束點(一樣)B係長條基板W上之第1次的曝光結束位置B。
The timing of the
此最初之分割曝光圖案資料DPn(DP1)之曝光況係因為圖案對準標記MP未形成於基板,所以在曝光前不利用對準相機41拍攝圖案對準標記MP。替代地,拍攝長條基板W的端面EW,並決定分割曝光圖案資料DP1的描繪曝光位置(Y及θ座標)。
The exposure of the first divided exposure pattern data DPn (DP1) is because the pattern alignment mark MP is not formed on the substrate, so the pattern alignment mark MP is not captured by the
步驟2:供給側制動輥15與捲繞側制動輥25夾壓長條基板W,曝光工作台31解除對長條基板W之吸附並下降,供給捲盤11捲繞長條基板W,並使長條基板W在上游方向移動。然後,在對準相機41在其視野CA內捕捉到圖案對準標記MP之狀態,供給捲盤11停止,供給側制動輥15與捲繞側制動輥25夾壓長條基板W,而限制(制止)長條基板W之移動。在曝光工作台31回到X方向之曝光起始位置後,上升至固持長條基板W的位置,並吸附固持被制止之長條基板W之一部分的背面(第7圖(3))。
Step 2: The supply-
對準相機41拍攝圖案對準標記MP(及基板端面EW),再根據所拍攝之影像資料,影像處理部60a檢測出形成於長條基板W上之圖案對準標記MP的位置後,設定連接新曝光之分割曝光圖案資料DPn+1(DP2)與已曝光之分割曝光圖案資料DPn(DP1)的連接位置(匹配連接位置)。所設定之匹配連接位置包含重疊區間AOn(AO1)(第6圖)。
The
步驟3:解除供給側制動輥15與捲繞側制動輥25
對長條基板W的夾壓,在曝光工作台31吸附長條基板W之狀態,對曝光單元51在下游方向移動。曝光單元51係為了分割曝光圖案資料DPn+1(DP2)經由重疊區間AOn(重疊區間AO1)與分割曝光圖案資料DPn(DP1)連接,而將分割曝光圖案資料DP2的繪線圖案(分割圖案)PL描繪(曝光)於長條基板W上,將一對圖案對準標記MP曝光於繪線圖案PL之上游側端部附近的兩側,曝光工作台31停在曝光停止位置(第7圖(4))。分割曝光圖案資料DPn(DP1)與DPn+1(DP2)係經由重疊區間AOn(AO1)連接。
Step 3: Release the supply-
曝光單元51描繪(曝光)分割曝光圖案資料DPn+1(DP2)的時序係根據在步驟2所匹配之連接位置與分割曝光圖案資料DPn+1(DP2),並根據曝光工作台31從起始位置在下游方向所移動的距離受到控制。A1點係長條基板W上之第2次以後的曝光起始位置,與在長條基板W上之重疊區間AOn(AO1)的下游側端點一致。B點係長條基板W上之曝光結束位置,與在長條基板W上之分割曝光圖案資料DPn+1(DP2)的上游側端點一致。重疊區間AOn(AO2)的下游側端點係分割曝光圖案資料DPn+1(DP2)的下游側端點,與是長條基板W上之曝光起始位置的A1點一致,分割曝光圖案資料DPn+1(DP2)的上游側端點與是該長條基板W上之曝光結束位置的B點一致。
The timing of the
以後,依序重複地執行步驟2與3至對長條曝光圖案的終端進行曝光(第7圖(5)、(6))。 After that, steps 2 and 3 are repeated in sequence to expose the terminal of the long exposure pattern (Figure 7, (5), (6)).
在以上之實施形態,依序對分割曝光圖案資料 DPn進行曝光,但是本發明係亦可不是依序對分割曝光圖案資料DPn進行曝光,,而挪移順序,例如亦可變換順序,亦可順序相反,或者亦可對同一分割曝光圖案資料DPn進行曝光複數次。 In the above embodiments, the exposure pattern data is divided in order. The DPn is exposed, but the present invention may not expose the divided exposure pattern data DPn sequentially, and the shifting order may, for example, change the order or reverse the order, or may expose the same divided exposure pattern data DPn Plural times.
在以上之實施形態,對準相機41不僅拍攝圖案對準標記MP,亦將基板端面EW看成一種標記來拍攝,但是不必將基板端面EW作為基準。又,亦可不形成(曝光)特殊之圖案對準標記MP,而將繪線圖案PL的一部分用作圖案對準標記。
In the above embodiment, the
W‧‧‧長條基板 W‧‧‧Strip substrate
AE‧‧‧曝光單元 AE‧‧‧Exposure unit
51‧‧‧之曝光範圍 51‧‧‧ exposure range
EW‧‧‧基板端面 EW‧‧‧Substrate end face
AC‧‧‧對準相機41之視野
AC‧‧‧Focus on
31‧‧‧曝光工作台 31‧‧‧Exposure Workbench
41‧‧‧對準相機 41‧‧‧Aim at the camera
51‧‧‧曝光單元 51‧‧‧Exposure unit
MP‧‧‧圖案對準標記 MP‧‧‧ Pattern alignment mark
PL‧‧‧繪線圖案(分割圖案) PL‧‧‧Line drawing pattern (split pattern)
Á‧‧‧長條基板W上之第1次的曝光起始位置(點A) Á‧‧‧ The first exposure start position on the long substrate W (point A)
B‧‧‧長條基板W上之曝光結束位置(點B) B‧‧‧End position of exposure on the strip substrate W (point B)
AO1‧‧‧重疊區間 AO1‧‧‧Overlap
A1‧‧‧長條基板W上之第1次的曝光起始位置(點A1) A1‧‧‧The first exposure start position on the long substrate W (point A1)
AO2‧‧‧重疊區間 AO2‧‧‧Overlap interval
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