TWI692796B - 載置台及電漿處理裝置 - Google Patents
載置台及電漿處理裝置 Download PDFInfo
- Publication number
- TWI692796B TWI692796B TW104143399A TW104143399A TWI692796B TW I692796 B TWI692796 B TW I692796B TW 104143399 A TW104143399 A TW 104143399A TW 104143399 A TW104143399 A TW 104143399A TW I692796 B TWI692796 B TW I692796B
- Authority
- TW
- Taiwan
- Prior art keywords
- mounting table
- insulating member
- peripheral surface
- plasma
- lower electrode
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014265670A JP6540022B2 (ja) | 2014-12-26 | 2014-12-26 | 載置台及びプラズマ処理装置 |
JP2014-265670 | 2014-12-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201637065A TW201637065A (zh) | 2016-10-16 |
TWI692796B true TWI692796B (zh) | 2020-05-01 |
Family
ID=56296091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104143399A TWI692796B (zh) | 2014-12-26 | 2015-12-23 | 載置台及電漿處理裝置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6540022B2 (fr) |
KR (1) | KR101850193B1 (fr) |
CN (1) | CN105742146B (fr) |
TW (1) | TWI692796B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206385A (zh) * | 2016-09-27 | 2016-12-07 | 上海华力微电子有限公司 | 一种降低腔体内金属污染含量的多晶硅刻蚀腔及方法 |
JP6794937B2 (ja) * | 2017-06-22 | 2020-12-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6969182B2 (ja) * | 2017-07-06 | 2021-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7055040B2 (ja) * | 2018-03-07 | 2022-04-15 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
JP7090465B2 (ja) * | 2018-05-10 | 2022-06-24 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP7228989B2 (ja) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | 載置台、エッジリングの位置決め方法及び基板処理装置 |
JP7401266B2 (ja) * | 2018-12-27 | 2023-12-19 | 東京エレクトロン株式会社 | 基板載置台、及び、基板処理装置 |
JP7274347B2 (ja) * | 2019-05-21 | 2023-05-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20210056646A (ko) | 2019-11-11 | 2021-05-20 | 삼성전자주식회사 | 플라즈마 처리 장비 |
CN111996590B (zh) * | 2020-08-14 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 一种工艺腔室 |
TW202232564A (zh) * | 2020-10-15 | 2022-08-16 | 日商東京威力科創股份有限公司 | 緊固構造、電漿處理裝置以及緊固方法 |
CN113192876A (zh) * | 2021-04-30 | 2021-07-30 | 北京北方华创微电子装备有限公司 | 半导体设备及其承载装置 |
JP2023067033A (ja) | 2021-10-29 | 2023-05-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201001592A (en) * | 2008-03-11 | 2010-01-01 | Tokyo Electron Ltd | Loading table structure and processing device |
CN203503602U (zh) * | 2013-10-18 | 2014-03-26 | 中芯国际集成电路制造(北京)有限公司 | 一种蚀刻结构 |
TW201423904A (zh) * | 2012-12-06 | 2014-06-16 | Beijing Nmc Co Ltd | 靜電卡盤以及等離子體加工設備 |
TW201428845A (zh) * | 2012-09-29 | 2014-07-16 | Advanced Micro Fab Equip Inc | 等離子體處理裝置及調節基片邊緣區域製程速率的方法 |
US20140213055A1 (en) * | 2011-08-17 | 2014-07-31 | Tokyo Electron Limited | Semiconductor manufacturing device and processing method |
JP2014222786A (ja) * | 2008-08-15 | 2014-11-27 | ラム リサーチ コーポレーションLam Research Corporation | 温度制御式ホットエッジリング組立体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3957719B2 (ja) * | 2004-02-27 | 2007-08-15 | 川崎マイクロエレクトロニクス株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP2005260011A (ja) | 2004-03-12 | 2005-09-22 | Hitachi High-Technologies Corp | ウエハ処理装置およびウエハ処理方法 |
JP2006016126A (ja) | 2004-06-30 | 2006-01-19 | Hitachi Building Systems Co Ltd | エレベーターの制御装置 |
JP4992630B2 (ja) * | 2007-09-19 | 2012-08-08 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
KR101592061B1 (ko) * | 2008-10-31 | 2016-02-04 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버의 하부 전극 어셈블리 |
JP6034156B2 (ja) * | 2011-12-05 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5893516B2 (ja) * | 2012-06-22 | 2016-03-23 | 東京エレクトロン株式会社 | 被処理体の処理装置及び被処理体の載置台 |
JP6400273B2 (ja) * | 2013-03-11 | 2018-10-03 | 新光電気工業株式会社 | 静電チャック装置 |
-
2014
- 2014-12-26 JP JP2014265670A patent/JP6540022B2/ja active Active
-
2015
- 2015-12-15 KR KR1020150178938A patent/KR101850193B1/ko active IP Right Grant
- 2015-12-23 TW TW104143399A patent/TWI692796B/zh active
- 2015-12-25 CN CN201510993810.6A patent/CN105742146B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201001592A (en) * | 2008-03-11 | 2010-01-01 | Tokyo Electron Ltd | Loading table structure and processing device |
JP2014222786A (ja) * | 2008-08-15 | 2014-11-27 | ラム リサーチ コーポレーションLam Research Corporation | 温度制御式ホットエッジリング組立体 |
US20140213055A1 (en) * | 2011-08-17 | 2014-07-31 | Tokyo Electron Limited | Semiconductor manufacturing device and processing method |
TW201428845A (zh) * | 2012-09-29 | 2014-07-16 | Advanced Micro Fab Equip Inc | 等離子體處理裝置及調節基片邊緣區域製程速率的方法 |
TW201423904A (zh) * | 2012-12-06 | 2014-06-16 | Beijing Nmc Co Ltd | 靜電卡盤以及等離子體加工設備 |
CN203503602U (zh) * | 2013-10-18 | 2014-03-26 | 中芯国际集成电路制造(北京)有限公司 | 一种蚀刻结构 |
Also Published As
Publication number | Publication date |
---|---|
KR101850193B1 (ko) | 2018-04-18 |
JP6540022B2 (ja) | 2019-07-10 |
CN105742146B (zh) | 2018-01-05 |
JP2016127090A (ja) | 2016-07-11 |
CN105742146A (zh) | 2016-07-06 |
TW201637065A (zh) | 2016-10-16 |
KR20160079662A (ko) | 2016-07-06 |
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