TWI692674B - 衍生自降莰二烯和馬來酸酐之聚合物及其用途 - Google Patents

衍生自降莰二烯和馬來酸酐之聚合物及其用途 Download PDF

Info

Publication number
TWI692674B
TWI692674B TW105143893A TW105143893A TWI692674B TW I692674 B TWI692674 B TW I692674B TW 105143893 A TW105143893 A TW 105143893A TW 105143893 A TW105143893 A TW 105143893A TW I692674 B TWI692674 B TW I692674B
Authority
TW
Taiwan
Prior art keywords
alkyl
polymer
general formula
maleic anhydride
composition
Prior art date
Application number
TW105143893A
Other languages
English (en)
Chinese (zh)
Other versions
TW201740189A (zh
Inventor
拉里Ｆ 羅得思
帕拉蒙 崁達那拉曲奇
Original Assignee
日商住友電木股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商住友電木股份有限公司 filed Critical 日商住友電木股份有限公司
Publication of TW201740189A publication Critical patent/TW201740189A/zh
Application granted granted Critical
Publication of TWI692674B publication Critical patent/TWI692674B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L47/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/06—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having two or more carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/04—Anhydrides, e.g. cyclic anhydrides
    • C08F22/06—Maleic anhydride
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/02—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F32/06—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having two or more carbon-to-carbon double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW105143893A 2015-12-31 2016-12-29 衍生自降莰二烯和馬來酸酐之聚合物及其用途 TWI692674B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562273553P 2015-12-31 2015-12-31
US62/273,553 2015-12-31

Publications (2)

Publication Number Publication Date
TW201740189A TW201740189A (zh) 2017-11-16
TWI692674B true TWI692674B (zh) 2020-05-01

Family

ID=57985011

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105143893A TWI692674B (zh) 2015-12-31 2016-12-29 衍生自降莰二烯和馬來酸酐之聚合物及其用途

Country Status (6)

Country Link
US (2) US9834627B2 (enExample)
JP (1) JP6726281B2 (enExample)
KR (1) KR101930045B1 (enExample)
CN (1) CN108473749B (enExample)
TW (1) TWI692674B (enExample)
WO (1) WO2017117483A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692674B (zh) * 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途
WO2020037236A1 (en) 2018-08-17 2020-02-20 Massachusetts Institute Of Technology Degradable polymers of a cyclic silyl ether and uses thereof
JP7322372B2 (ja) * 2018-09-28 2023-08-08 住友ベークライト株式会社 ポリマー、樹脂組成物、及び、樹脂膜
KR20220069051A (ko) * 2019-09-26 2022-05-26 스미또모 베이크라이트 가부시키가이샤 폴리머, 감광성 수지 조성물, 수지막, 및 전자 장치
WO2021096591A1 (en) 2019-11-15 2021-05-20 Massachusetts Institute Of Technology Functional oligomers and functional polymers including hydroxylated polymers and conjugates thereof and uses thereof
US20210200092A1 (en) * 2019-12-31 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming photoresist pattern
EP4284854A1 (en) 2021-02-01 2023-12-06 Massachusetts Institute of Technology Reprocessable compositions
WO2022256399A2 (en) * 2021-06-01 2022-12-08 Massachusetts Institute Of Technology Latent-fluoride containing polymers for triggered degradation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5569711A (en) * 1991-09-12 1996-10-29 Mitsui Petrochemical Industries, Ltd. Cycloolefin resin composition
US6165672A (en) * 1997-11-01 2000-12-26 Hyundai Electronics Industries Co., Ltd. Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin
US20150252132A1 (en) * 2014-03-06 2015-09-10 Sumitomo Bakelite Co., Ltd. Polymer, photosensitive resin composition and electronic device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146045A (ja) * 1988-02-17 1990-06-05 Tosoh Corp フォトレジスト組成物
US5212043A (en) 1988-02-17 1993-05-18 Tosho Corporation Photoresist composition comprising a non-aromatic resin having no aromatic structures derived from units of an aliphatic cyclic hydrocarbon and units of maleic anhydride and/or maleimide and a photosensitive agent
JP2638887B2 (ja) * 1988-02-26 1997-08-06 東ソー株式会社 感光性組成物
JP2961722B2 (ja) 1991-12-11 1999-10-12 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH0570639A (ja) * 1991-09-12 1993-03-23 Mitsui Petrochem Ind Ltd 環状オレフイン樹脂組成物
US6013413A (en) * 1997-02-28 2000-01-11 Cornell Research Foundation, Inc. Alicyclic nortricyclene polymers and co-polymers
JP3262108B2 (ja) 1998-09-09 2002-03-04 東レ株式会社 ポジ型感光性樹脂組成物
JP2002201226A (ja) 2000-12-28 2002-07-19 Jsr Corp 共重合体およびそれを用いた感放射線性樹脂組成物
JP3952756B2 (ja) 2001-11-29 2007-08-01 日本ゼオン株式会社 感放射線性樹脂組成物及びその利用
US7799883B2 (en) 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP4684139B2 (ja) * 2005-10-17 2011-05-18 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
US7745104B2 (en) * 2006-08-10 2010-06-29 Shin-Etsu Chemical Co., Ltd. Bottom resist layer composition and patterning process using the same
US8541523B2 (en) 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP5579553B2 (ja) 2010-09-17 2014-08-27 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
CN103649220B (zh) * 2011-07-14 2015-09-09 住友电木株式会社 在成像式曝光于光化辐射下之后形成构图层的聚合物及其组合物
KR101572049B1 (ko) 2012-09-25 2015-11-26 프로메러스, 엘엘씨 사이클로올레핀성 중합체를 함유하는 말레이미드 및 그의 용도
WO2015038412A2 (en) 2013-09-16 2015-03-19 Promerus, Llc Amine treated maleic anhydride polymers with pendent silyl group, compositions and applications thereof
TWI627217B (zh) * 2013-09-16 2018-06-21 日商住友電木股份有限公司 經胺處理之順丁烯二酸酐聚合物、組成物及其應用
TWI692674B (zh) * 2015-12-31 2020-05-01 日商住友電木股份有限公司 衍生自降莰二烯和馬來酸酐之聚合物及其用途

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5569711A (en) * 1991-09-12 1996-10-29 Mitsui Petrochemical Industries, Ltd. Cycloolefin resin composition
US6165672A (en) * 1997-11-01 2000-12-26 Hyundai Electronics Industries Co., Ltd. Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin
US20150252132A1 (en) * 2014-03-06 2015-09-10 Sumitomo Bakelite Co., Ltd. Polymer, photosensitive resin composition and electronic device

Also Published As

Publication number Publication date
US20170190810A1 (en) 2017-07-06
US9834627B2 (en) 2017-12-05
KR101930045B1 (ko) 2018-12-17
JP6726281B2 (ja) 2020-07-22
US9944730B2 (en) 2018-04-17
JP2019503415A (ja) 2019-02-07
KR20180082607A (ko) 2018-07-18
CN108473749A (zh) 2018-08-31
US20180044449A1 (en) 2018-02-15
CN108473749B (zh) 2019-11-26
TW201740189A (zh) 2017-11-16
WO2017117483A1 (en) 2017-07-06

Similar Documents

Publication Publication Date Title
TWI692674B (zh) 衍生自降莰二烯和馬來酸酐之聚合物及其用途
TWI411876B (zh) 光敏介電樹脂組成物、由其形成之薄膜、及包括此薄膜之半導體及顯示裝置
JP5860193B2 (ja) マレイミド含有シクロオレフィンポリマーおよびその利用
TWI716619B (zh) 納迪克酸酐聚合物及由其衍生的光敏組成物
JP6321811B2 (ja) アミン処理無水マレイン酸ポリマー、組成物およびそれらの利用
TWI666257B (zh) 含有熱鹼產生劑之光可成像組成物
TW201522397A (zh) 經胺處理之具有懸垂矽基之順丁烯二酸酐聚合物、組成物及其應用
TWI659046B (zh) 作爲永久介電材料的順丁烯二醯亞胺及環烯烴單體之聚合物
TWI672323B (zh) 無氟可光圖案化之含酚官能基之聚合物組成物
US11048168B2 (en) Permanent dielectric compositions containing photoacid generator and base
TWI684826B (zh) 可光成像組成物、硬化產物形成方法、硬化產物及包含該硬化產物的光電子或微電子裝置
TW202107202A (zh) 含有醯胺酸作為潛含性鹼觸媒之正色調感光性組成物
JP6959351B2 (ja) 下層膜形成用樹脂材料、レジスト下層膜、レジスト下層膜の製造方法および積層体

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees