TWI692026B - 控制裝置、基板處理系統、基板處理方法及程式 - Google Patents

控制裝置、基板處理系統、基板處理方法及程式 Download PDF

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Publication number
TWI692026B
TWI692026B TW106109248A TW106109248A TWI692026B TW I692026 B TWI692026 B TW I692026B TW 106109248 A TW106109248 A TW 106109248A TW 106109248 A TW106109248 A TW 106109248A TW I692026 B TWI692026 B TW I692026B
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TW
Taiwan
Prior art keywords
film
forming
laminated
forming conditions
processing
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TW106109248A
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English (en)
Chinese (zh)
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TW201801173A (zh
Inventor
竹永裕一
笠井隆人
Original Assignee
日商東京威力科創股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
TW106109248A 2016-03-28 2017-03-21 控制裝置、基板處理系統、基板處理方法及程式 TWI692026B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-063220 2016-03-28
JP2016063220A JP6541599B2 (ja) 2016-03-28 2016-03-28 制御装置、基板処理システム、基板処理方法及びプログラム

Publications (2)

Publication Number Publication Date
TW201801173A TW201801173A (zh) 2018-01-01
TWI692026B true TWI692026B (zh) 2020-04-21

Family

ID=59898147

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106109248A TWI692026B (zh) 2016-03-28 2017-03-21 控制裝置、基板處理系統、基板處理方法及程式

Country Status (5)

Country Link
US (1) US10395934B2 (ko)
JP (1) JP6541599B2 (ko)
KR (1) KR102147563B1 (ko)
CN (1) CN107236936B (ko)
TW (1) TWI692026B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6959191B2 (ja) * 2018-07-25 2021-11-02 旭化成エレクトロニクス株式会社 学習処理装置、学習処理方法、化合物半導体の製造方法、および、プログラム
JP7161896B2 (ja) * 2018-09-20 2022-10-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
KR20210092238A (ko) * 2018-11-21 2021-07-23 도쿄엘렉트론가부시키가이샤 기판 처리의 조건 설정 지원 방법, 기판 처리 시스템, 기억 매체 및 학습 모델
CN110442930B (zh) * 2019-07-19 2023-12-15 Tcl华星光电技术有限公司 虚拟量测方法和虚拟量测装置
JP7442407B2 (ja) * 2020-07-14 2024-03-04 東京エレクトロン株式会社 制御装置、システム及び制御方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200507143A (en) * 2003-06-18 2005-02-16 Applied Materials Inc Method and system for monitoring an etch process
TW200737026A (en) * 2006-02-07 2007-10-01 Timbre Tech Inc Transforming metrology data from a semiconductor treatment system using multivariate analysis
US20100198386A1 (en) * 2006-10-05 2010-08-05 Tokyo Electron Limited Method of optimizing process recipe of substrate processing system
US20130260572A1 (en) * 2012-03-28 2013-10-03 Tokyo Electron Limited Continuous processing system, continuous processing method, and program
US20140335693A1 (en) * 2013-05-09 2014-11-13 Tokyo Electron Limited Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190457A (ja) * 1992-01-17 1993-07-30 Fuji Electric Co Ltd 学習指示機能付半導体製造装置
JPH0766291A (ja) * 1993-08-31 1995-03-10 Nippondenso Co Ltd 半導体装置の製造方法
JP3901958B2 (ja) * 2000-08-24 2007-04-04 東京エレクトロン株式会社 熱処理装置設定温度の作成方法、および熱処理方法
US20050287806A1 (en) * 2004-06-24 2005-12-29 Hiroyuki Matsuura Vertical CVD apparatus and CVD method using the same
JP4511488B2 (ja) * 2006-03-31 2010-07-28 株式会社堀場製作所 有機ｅｌ素子の製造装置
JP4464979B2 (ja) * 2007-03-05 2010-05-19 東京エレクトロン株式会社 処理システム、処理方法、及び、プログラム
JP5212281B2 (ja) * 2009-07-03 2013-06-19 日立電線株式会社 半導体光素子基板の製造方法
JP2012004542A (ja) * 2010-05-20 2012-01-05 Tokyo Electron Ltd シリコン膜の形成方法およびその形成装置
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
JP5788355B2 (ja) * 2012-03-29 2015-09-30 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
US8994013B2 (en) * 2012-05-18 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
JP2014127627A (ja) * 2012-12-27 2014-07-07 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置、及び、プログラム
US9797042B2 (en) * 2014-05-15 2017-10-24 Lam Research Corporation Single ALD cycle thickness control in multi-station substrate deposition systems

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200507143A (en) * 2003-06-18 2005-02-16 Applied Materials Inc Method and system for monitoring an etch process
TW200737026A (en) * 2006-02-07 2007-10-01 Timbre Tech Inc Transforming metrology data from a semiconductor treatment system using multivariate analysis
US20100198386A1 (en) * 2006-10-05 2010-08-05 Tokyo Electron Limited Method of optimizing process recipe of substrate processing system
US20130260572A1 (en) * 2012-03-28 2013-10-03 Tokyo Electron Limited Continuous processing system, continuous processing method, and program
US20140335693A1 (en) * 2013-05-09 2014-11-13 Tokyo Electron Limited Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system

Also Published As

Publication number Publication date
US20170278714A1 (en) 2017-09-28
JP6541599B2 (ja) 2019-07-10
JP2017183311A (ja) 2017-10-05
US10395934B2 (en) 2019-08-27
CN107236936A (zh) 2017-10-10
KR102147563B1 (ko) 2020-08-24
TW201801173A (zh) 2018-01-01
KR20170113201A (ko) 2017-10-12
CN107236936B (zh) 2020-03-03

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