TWI690091B - 發光元件及使用其之發光裝置 - Google Patents

發光元件及使用其之發光裝置 Download PDF

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Publication number
TWI690091B
TWI690091B TW105117259A TW105117259A TWI690091B TW I690091 B TWI690091 B TW I690091B TW 105117259 A TW105117259 A TW 105117259A TW 105117259 A TW105117259 A TW 105117259A TW I690091 B TWI690091 B TW I690091B
Authority
TW
Taiwan
Prior art keywords
light
electrode
semiconductor layer
emitting element
side semiconductor
Prior art date
Application number
TW105117259A
Other languages
English (en)
Chinese (zh)
Other versions
TW201709556A (zh
Inventor
尺長功一
榎村恵滋
Original Assignee
日商日亞化學工業股份有限公司
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Publication date
Application filed by 日商日亞化學工業股份有限公司 filed Critical 日商日亞化學工業股份有限公司
Publication of TW201709556A publication Critical patent/TW201709556A/zh
Application granted granted Critical
Publication of TWI690091B publication Critical patent/TWI690091B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW105117259A 2015-07-30 2016-06-01 發光元件及使用其之發光裝置 TWI690091B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-150828 2015-07-30
JP2015150828 2015-07-30
JP2016-100165 2016-05-19
JP2016100165A JP6696298B2 (ja) 2015-07-30 2016-05-19 発光素子及びそれを用いた発光装置

Publications (2)

Publication Number Publication Date
TW201709556A TW201709556A (zh) 2017-03-01
TWI690091B true TWI690091B (zh) 2020-04-01

Family

ID=57988820

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105117259A TWI690091B (zh) 2015-07-30 2016-06-01 發光元件及使用其之發光裝置

Country Status (4)

Country Link
JP (1) JP6696298B2 (ja)
KR (1) KR102528843B1 (ja)
CN (1) CN106410003B (ja)
TW (1) TWI690091B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116884966A (zh) * 2017-07-21 2023-10-13 日亚化学工业株式会社 背光装置以及光源
US11024770B2 (en) 2017-09-25 2021-06-01 Nichia Corporation Light emitting element and light emitting device
US10658559B2 (en) * 2018-02-28 2020-05-19 Nichia Corporation Light emitting element and light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150179873A1 (en) * 2013-12-20 2015-06-25 Palo Alto Research Center Incorporated Small-sized light-emitting diode chiplets and method of fabrication thereof

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JP2001168395A (ja) * 1999-12-09 2001-06-22 Showa Denko Kk Ｉｉｉ−ｖ族化合物半導体発光ダイオード
JP2006086469A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
JP3904585B2 (ja) * 2004-10-07 2007-04-11 昭和電工株式会社 半導体素子の製造方法
WO2006068297A1 (en) 2004-12-22 2006-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
JP4367348B2 (ja) 2005-01-21 2009-11-18 住友電気工業株式会社 ウエハおよび発光装置の製造方法
JP2010251481A (ja) 2009-04-14 2010-11-04 Panasonic Electric Works Co Ltd 発光装置
JP2012044048A (ja) * 2010-08-20 2012-03-01 Sharp Corp 発光素子パッケージの製造方法及び発光素子パッケージ
WO2012031178A2 (en) * 2010-09-03 2012-03-08 The Procter & Gamble Company A light emitting apparatus
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
JP4989773B1 (ja) * 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
KR101276053B1 (ko) * 2011-07-22 2013-06-17 삼성전자주식회사 반도체 발광소자 및 발광장치
JP6024432B2 (ja) * 2012-12-10 2016-11-16 日亜化学工業株式会社 半導体発光素子
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
KR102099439B1 (ko) * 2013-10-08 2020-04-09 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
KR20150064414A (ko) * 2013-12-03 2015-06-11 삼성전자주식회사 발광소자 및 이를 포함하는 조명 장치
KR102122358B1 (ko) 2014-01-20 2020-06-15 삼성전자주식회사 반도체 발광 소자
JP2016207725A (ja) * 2015-04-17 2016-12-08 スタンレー電気株式会社 発光ダイオード装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150179873A1 (en) * 2013-12-20 2015-06-25 Palo Alto Research Center Incorporated Small-sized light-emitting diode chiplets and method of fabrication thereof

Also Published As

Publication number Publication date
JP2017034231A (ja) 2017-02-09
KR20170015145A (ko) 2017-02-08
TW201709556A (zh) 2017-03-01
KR102528843B1 (ko) 2023-05-03
CN106410003A (zh) 2017-02-15
JP6696298B2 (ja) 2020-05-20
CN106410003B (zh) 2020-08-07

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