TWI683457B - 發光二極體(led)結構及形成覆晶led結構之方法 - Google Patents

發光二極體(led)結構及形成覆晶led結構之方法 Download PDF

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TWI683457B
TWI683457B TW106136319A TW106136319A TWI683457B TW I683457 B TWI683457 B TW I683457B TW 106136319 A TW106136319 A TW 106136319A TW 106136319 A TW106136319 A TW 106136319A TW I683457 B TWI683457 B TW I683457B
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layer
metal
emitting device
led
copper
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TW106136319A
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Chinese (zh)
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TW201826576A (zh
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雷吉普
亨利 蔡廣興
魏亞軍
史恰非諾史帝法諾
亞歷山卓 史帝格沃丹尼爾
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荷蘭商皇家飛利浦電子股份有限公司
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/12041—LED
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H10H20/01—Manufacture or treatment
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    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW106136319A 2011-03-14 2012-03-13 發光二極體(led)結構及形成覆晶led結構之方法 TWI683457B (zh)

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US201161452181P 2011-03-14 2011-03-14
US61/452,181 2011-03-14

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TW201826576A TW201826576A (zh) 2018-07-16
TWI683457B true TWI683457B (zh) 2020-01-21

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TW106136319A TWI683457B (zh) 2011-03-14 2012-03-13 發光二極體(led)結構及形成覆晶led結構之方法
TW105114215A TWI612696B (zh) 2011-03-14 2012-03-13 發光二極體（ｌｅｄ）結構及形成覆晶ｌｅｄ結構之方法
TW101108520A TW201301562A (zh) 2011-03-14 2012-03-13 具有再分配用於覆晶安裝的垂直接觸件的發光二極體

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TW101108520A TW201301562A (zh) 2011-03-14 2012-03-13 具有再分配用於覆晶安裝的垂直接觸件的發光二極體

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US (3) US9246061B2 (enExample)
EP (1) EP2686892B1 (enExample)
JP (1) JP5932851B2 (enExample)
KR (1) KR101933001B1 (enExample)
CN (2) CN106058028B (enExample)
TW (3) TWI683457B (enExample)
WO (1) WO2012123840A1 (enExample)

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DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
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EP2686892A1 (en) 2014-01-22
US20180019370A1 (en) 2018-01-18
CN103415935A (zh) 2013-11-27
TW201826576A (zh) 2018-07-16
CN106058028B (zh) 2019-03-29
KR101933001B1 (ko) 2018-12-27
US20130334563A1 (en) 2013-12-19
KR20140013029A (ko) 2014-02-04
US9722137B2 (en) 2017-08-01
JP5932851B2 (ja) 2016-06-08
JP2014508426A (ja) 2014-04-03
CN103415935B (zh) 2016-09-14
TWI612696B (zh) 2018-01-21
TW201631810A (zh) 2016-09-01
WO2012123840A1 (en) 2012-09-20
EP2686892B1 (en) 2019-10-02
US20160126408A1 (en) 2016-05-05
CN106058028A (zh) 2016-10-26
US9246061B2 (en) 2016-01-26
TW201301562A (zh) 2013-01-01

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