CN106058028B - 具有重新分布用于倒装芯片安装的垂直接触件的led - Google Patents
具有重新分布用于倒装芯片安装的垂直接触件的led Download PDFInfo
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- CN106058028B CN106058028B CN201610671712.5A CN201610671712A CN106058028B CN 106058028 B CN106058028 B CN 106058028B CN 201610671712 A CN201610671712 A CN 201610671712A CN 106058028 B CN106058028 B CN 106058028B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161452181P | 2011-03-14 | 2011-03-14 | |
| US61/452181 | 2011-03-14 | ||
| CN201280013210.3A CN103415935B (zh) | 2011-03-14 | 2012-02-28 | 具有重新分布用于倒装芯片安装的垂直接触件的led |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280013210.3A Division CN103415935B (zh) | 2011-03-14 | 2012-02-28 | 具有重新分布用于倒装芯片安装的垂直接触件的led |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106058028A CN106058028A (zh) | 2016-10-26 |
| CN106058028B true CN106058028B (zh) | 2019-03-29 |
Family
ID=45937460
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610671712.5A Active CN106058028B (zh) | 2011-03-14 | 2012-02-28 | 具有重新分布用于倒装芯片安装的垂直接触件的led |
| CN201280013210.3A Active CN103415935B (zh) | 2011-03-14 | 2012-02-28 | 具有重新分布用于倒装芯片安装的垂直接触件的led |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280013210.3A Active CN103415935B (zh) | 2011-03-14 | 2012-02-28 | 具有重新分布用于倒装芯片安装的垂直接触件的led |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9246061B2 (enExample) |
| EP (1) | EP2686892B1 (enExample) |
| JP (1) | JP5932851B2 (enExample) |
| KR (1) | KR101933001B1 (enExample) |
| CN (2) | CN106058028B (enExample) |
| TW (3) | TWI683457B (enExample) |
| WO (1) | WO2012123840A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| TWI548124B (zh) * | 2013-05-27 | 2016-09-01 | 崴發控股有限公司 | 覆晶式發光二極體元件及其封裝結構 |
| DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| KR102222861B1 (ko) * | 2013-07-18 | 2021-03-04 | 루미리즈 홀딩 비.브이. | 고반사성 플립칩 led 다이 |
| EP3072166B1 (en) * | 2013-11-19 | 2021-03-24 | Lumileds LLC | A solid state light emitting device and its method of manufacturing |
| DE112014006625T5 (de) * | 2014-04-29 | 2017-02-09 | Enraytek Optoelectronics Co., Ltd. | Vertikales LED-Array-Element, das LED epitaktische Strukturen mit einem LED-Paket-Substrat integriert |
| US9343633B1 (en) | 2014-10-31 | 2016-05-17 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode lighting device |
| US9484492B2 (en) * | 2015-01-06 | 2016-11-01 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
| US9865772B2 (en) | 2015-01-06 | 2018-01-09 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
| US9601659B2 (en) * | 2015-01-06 | 2017-03-21 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
| WO2016148424A1 (ko) * | 2015-03-16 | 2016-09-22 | 서울바이오시스 주식회사 | 금속 벌크를 포함하는 발광 소자 |
| DE102015114587A1 (de) * | 2015-09-01 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
| US10898725B2 (en) | 2018-11-26 | 2021-01-26 | International Business Machines Corporation | Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes |
| CN113594321B (zh) * | 2021-04-05 | 2023-12-01 | 常州纵慧芯光半导体科技有限公司 | 一种半导体光源及其驱动电路 |
Citations (2)
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| CN1909238A (zh) * | 2005-08-03 | 2007-02-07 | 三星电机株式会社 | 具有保护元件的发光装置及该发光装置的制造方法 |
| CN101685823A (zh) * | 2004-02-20 | 2010-03-31 | 奥斯兰姆奥普托半导体有限责任公司 | 光电组件及其制造方法以及具有多个光电组件的装置 |
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| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| TW492202B (en) | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
| US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
| CN100347866C (zh) * | 2002-07-22 | 2007-11-07 | 克里公司 | 包括阻挡层/子层的发光二极管及其制造方法 |
| TW577184B (en) * | 2002-12-26 | 2004-02-21 | Epistar Corp | Light emitting layer having voltage/resistance interdependent layer |
| WO2005050597A1 (en) * | 2003-11-14 | 2005-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| JP4116587B2 (ja) * | 2004-04-13 | 2008-07-09 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
| US20050274970A1 (en) * | 2004-06-14 | 2005-12-15 | Lumileds Lighting U.S., Llc | Light emitting device with transparent substrate having backside vias |
| TWI244748B (en) | 2004-10-08 | 2005-12-01 | Epistar Corp | A light-emitting device with a protecting structure |
| EP1750309A3 (en) | 2005-08-03 | 2009-07-29 | Samsung Electro-mechanics Co., Ltd | Light emitting device having protection element |
| US7994514B2 (en) | 2006-04-21 | 2011-08-09 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
| JP2008135694A (ja) * | 2006-10-31 | 2008-06-12 | Hitachi Cable Ltd | Ledモジュール |
| US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US7759670B2 (en) | 2007-06-12 | 2010-07-20 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
| US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
| US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
| KR101017395B1 (ko) * | 2008-12-24 | 2011-02-28 | 서울옵토디바이스주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
| WO2010074287A1 (ja) * | 2008-12-28 | 2010-07-01 | 有限会社Mtec | 発光ダイオード素子及び発光ダイオードモジュール |
| TWI414088B (zh) * | 2009-12-16 | 2013-11-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| KR101106151B1 (ko) * | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
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2012
- 2012-02-28 WO PCT/IB2012/050915 patent/WO2012123840A1/en not_active Ceased
- 2012-02-28 CN CN201610671712.5A patent/CN106058028B/zh active Active
- 2012-02-28 US US14/001,878 patent/US9246061B2/en active Active
- 2012-02-28 KR KR1020137027063A patent/KR101933001B1/ko active Active
- 2012-02-28 EP EP12713318.9A patent/EP2686892B1/en active Active
- 2012-02-28 CN CN201280013210.3A patent/CN103415935B/zh active Active
- 2012-02-28 JP JP2013558531A patent/JP5932851B2/ja active Active
- 2012-03-13 TW TW106136319A patent/TWI683457B/zh active
- 2012-03-13 TW TW105114215A patent/TWI612696B/zh active
- 2012-03-13 TW TW101108520A patent/TW201301562A/zh unknown
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2016
- 2016-01-12 US US14/994,106 patent/US9722137B2/en active Active
-
2017
- 2017-07-31 US US15/664,651 patent/US20180019370A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685823A (zh) * | 2004-02-20 | 2010-03-31 | 奥斯兰姆奥普托半导体有限责任公司 | 光电组件及其制造方法以及具有多个光电组件的装置 |
| CN1909238A (zh) * | 2005-08-03 | 2007-02-07 | 三星电机株式会社 | 具有保护元件的发光装置及该发光装置的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2686892A1 (en) | 2014-01-22 |
| US20180019370A1 (en) | 2018-01-18 |
| CN103415935A (zh) | 2013-11-27 |
| TW201826576A (zh) | 2018-07-16 |
| KR101933001B1 (ko) | 2018-12-27 |
| US20130334563A1 (en) | 2013-12-19 |
| KR20140013029A (ko) | 2014-02-04 |
| US9722137B2 (en) | 2017-08-01 |
| JP5932851B2 (ja) | 2016-06-08 |
| JP2014508426A (ja) | 2014-04-03 |
| CN103415935B (zh) | 2016-09-14 |
| TWI612696B (zh) | 2018-01-21 |
| TW201631810A (zh) | 2016-09-01 |
| WO2012123840A1 (en) | 2012-09-20 |
| EP2686892B1 (en) | 2019-10-02 |
| US20160126408A1 (en) | 2016-05-05 |
| CN106058028A (zh) | 2016-10-26 |
| US9246061B2 (en) | 2016-01-26 |
| TW201301562A (zh) | 2013-01-01 |
| TWI683457B (zh) | 2020-01-21 |
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