TWI682440B - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
- Publication number
- TWI682440B TWI682440B TW105118781A TW105118781A TWI682440B TW I682440 B TWI682440 B TW I682440B TW 105118781 A TW105118781 A TW 105118781A TW 105118781 A TW105118781 A TW 105118781A TW I682440 B TWI682440 B TW I682440B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- photoresist layer
- polycrystalline silicon
- photoresist
- manufacturing
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-131483 | 2015-06-30 | ||
JP2015131483 | 2015-06-30 | ||
JP2016040080A JP6736314B2 (ja) | 2015-06-30 | 2016-03-02 | 半導体装置の製造方法 |
JP2016-040080 | 2016-03-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201705228A TW201705228A (zh) | 2017-02-01 |
TWI682440B true TWI682440B (zh) | 2020-01-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105118781A TWI682440B (zh) | 2015-06-30 | 2016-06-15 | 半導體裝置的製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6736314B2 (ja) |
TW (1) | TWI682440B (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW405174B (en) * | 1996-09-20 | 2000-09-11 | Hitachi Ltd | Process for manufacturing semiconductor integrated circuit device |
TW580733B (en) * | 1998-09-09 | 2004-03-21 | Fujitsu Ltd | Dry etching process and a fabrication process of a semiconductor device using such a dry etching process |
TW200407998A (en) * | 2002-08-14 | 2004-05-16 | Lam Res Corp | Method and compositions for hardening photoresist in etching processes |
US20100044798A1 (en) * | 2008-06-09 | 2010-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor device and a method of manufacturing the same |
US20150301454A1 (en) * | 2014-04-16 | 2015-10-22 | Canon Kabushiki Kaisha | Semiconductor device manufacturing method and resist pattern forming method |
-
2016
- 2016-03-02 JP JP2016040080A patent/JP6736314B2/ja active Active
- 2016-06-15 TW TW105118781A patent/TWI682440B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW405174B (en) * | 1996-09-20 | 2000-09-11 | Hitachi Ltd | Process for manufacturing semiconductor integrated circuit device |
TW580733B (en) * | 1998-09-09 | 2004-03-21 | Fujitsu Ltd | Dry etching process and a fabrication process of a semiconductor device using such a dry etching process |
TW200407998A (en) * | 2002-08-14 | 2004-05-16 | Lam Res Corp | Method and compositions for hardening photoresist in etching processes |
US20100044798A1 (en) * | 2008-06-09 | 2010-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor device and a method of manufacturing the same |
US20150301454A1 (en) * | 2014-04-16 | 2015-10-22 | Canon Kabushiki Kaisha | Semiconductor device manufacturing method and resist pattern forming method |
Also Published As
Publication number | Publication date |
---|---|
JP2017017308A (ja) | 2017-01-19 |
TW201705228A (zh) | 2017-02-01 |
JP6736314B2 (ja) | 2020-08-05 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |