TWI682440B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

Info

Publication number
TWI682440B
TWI682440B TW105118781A TW105118781A TWI682440B TW I682440 B TWI682440 B TW I682440B TW 105118781 A TW105118781 A TW 105118781A TW 105118781 A TW105118781 A TW 105118781A TW I682440 B TWI682440 B TW I682440B
Authority
TW
Taiwan
Prior art keywords
layer
photoresist layer
polycrystalline silicon
photoresist
manufacturing
Prior art date
Application number
TW105118781A
Other languages
English (en)
Chinese (zh)
Other versions
TW201705228A (zh
Inventor
桜井仁美
Original Assignee
日商艾普凌科有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商艾普凌科有限公司 filed Critical 日商艾普凌科有限公司
Publication of TW201705228A publication Critical patent/TW201705228A/zh
Application granted granted Critical
Publication of TWI682440B publication Critical patent/TWI682440B/zh

Links

Images

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
TW105118781A 2015-06-30 2016-06-15 半導體裝置的製造方法 TWI682440B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015-131483 2015-06-30
JP2015131483 2015-06-30
JP2016040080A JP6736314B2 (ja) 2015-06-30 2016-03-02 半導体装置の製造方法
JP2016-040080 2016-03-02

Publications (2)

Publication Number Publication Date
TW201705228A TW201705228A (zh) 2017-02-01
TWI682440B true TWI682440B (zh) 2020-01-11

Family

ID=57831382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105118781A TWI682440B (zh) 2015-06-30 2016-06-15 半導體裝置的製造方法

Country Status (2)

Country Link
JP (1) JP6736314B2 (ja)
TW (1) TWI682440B (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405174B (en) * 1996-09-20 2000-09-11 Hitachi Ltd Process for manufacturing semiconductor integrated circuit device
TW580733B (en) * 1998-09-09 2004-03-21 Fujitsu Ltd Dry etching process and a fabrication process of a semiconductor device using such a dry etching process
TW200407998A (en) * 2002-08-14 2004-05-16 Lam Res Corp Method and compositions for hardening photoresist in etching processes
US20100044798A1 (en) * 2008-06-09 2010-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor device and a method of manufacturing the same
US20150301454A1 (en) * 2014-04-16 2015-10-22 Canon Kabushiki Kaisha Semiconductor device manufacturing method and resist pattern forming method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405174B (en) * 1996-09-20 2000-09-11 Hitachi Ltd Process for manufacturing semiconductor integrated circuit device
TW580733B (en) * 1998-09-09 2004-03-21 Fujitsu Ltd Dry etching process and a fabrication process of a semiconductor device using such a dry etching process
TW200407998A (en) * 2002-08-14 2004-05-16 Lam Res Corp Method and compositions for hardening photoresist in etching processes
US20100044798A1 (en) * 2008-06-09 2010-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor device and a method of manufacturing the same
US20150301454A1 (en) * 2014-04-16 2015-10-22 Canon Kabushiki Kaisha Semiconductor device manufacturing method and resist pattern forming method

Also Published As

Publication number Publication date
JP2017017308A (ja) 2017-01-19
TW201705228A (zh) 2017-02-01
JP6736314B2 (ja) 2020-08-05

Similar Documents

Publication Publication Date Title
US9870954B2 (en) Simultaneous formation of source/drain openings with different profiles
JP2007053343A5 (ja)
KR100937659B1 (ko) 반도체 소자의 제조 방법
US9865463B2 (en) Method of manufacturing a semiconductor device
JP4383929B2 (ja) フラッシュメモリ素子の高電圧トランジスタの製造方法
TWI682440B (zh) 半導體裝置的製造方法
KR100766255B1 (ko) 반도체 소자 및 그 제조 방법
US7517640B2 (en) Method for removing photoresist using a thermal bake in the presence of hydrogen and a semiconductor device manufactured using the same
JP4495690B2 (ja) 半導体素子のソース/ドレイン領域形成方法
US6117742A (en) Method for making a high performance transistor
TWI691000B (zh) 半導體製程
US20070148841A1 (en) Method for forming transistor in semiconductor device
KR100678326B1 (ko) 반도체 소자의 제조 방법
KR100470393B1 (ko) 듀얼게이트 반도체소자의 제조방법
KR100223935B1 (ko) 반도체소자 제조방법
JPS6074663A (ja) 相補型半導体装置の製造方法
KR100606916B1 (ko) 반도체 소자의 형성방법
JP2016012690A (ja) 半導体装置の製造方法
TWI556321B (zh) 高電子遷移率電晶體植入硼隔離結構之製程方法
KR100241535B1 (ko) 반도체 소자의 트랜지스터 제조 방법
KR100782783B1 (ko) 반도체 소자 및 그 제조방법
US7446008B2 (en) Method for fabricating silicide layers for semiconductor device
KR100905182B1 (ko) 반도체 소자 형성 방법
KR950010045B1 (ko) 반도체 장치의 제조방법
JP2003209121A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees