TWI680512B - 矽晶圓之研磨方法、矽晶圓之製造方法及矽晶圓 - Google Patents

矽晶圓之研磨方法、矽晶圓之製造方法及矽晶圓 Download PDF

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Publication number
TWI680512B
TWI680512B TW106128075A TW106128075A TWI680512B TW I680512 B TWI680512 B TW I680512B TW 106128075 A TW106128075 A TW 106128075A TW 106128075 A TW106128075 A TW 106128075A TW I680512 B TWI680512 B TW I680512B
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TW
Taiwan
Prior art keywords
silicon wafer
polishing
notch
wafer
silicon
Prior art date
Application number
TW106128075A
Other languages
English (en)
Chinese (zh)
Other versions
TW201820474A (zh
Inventor
西村雅史
Masashi Nishimura
田中宏知
Hironori Tanaka
Original Assignee
日商Sumco股份有限公司
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Sumco股份有限公司, Sumco Corporation filed Critical 日商Sumco股份有限公司
Publication of TW201820474A publication Critical patent/TW201820474A/zh
Application granted granted Critical
Publication of TWI680512B publication Critical patent/TWI680512B/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02Heat treatment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW106128075A 2016-10-13 2017-08-18 矽晶圓之研磨方法、矽晶圓之製造方法及矽晶圓 TWI680512B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016202039A JP6589807B2 (ja) 2016-10-13 2016-10-13 シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ
JP2016-202039 2016-10-13

Publications (2)

Publication Number Publication Date
TW201820474A TW201820474A (zh) 2018-06-01
TWI680512B true TWI680512B (zh) 2019-12-21

Family

ID=61906278

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106128075A TWI680512B (zh) 2016-10-13 2017-08-18 矽晶圓之研磨方法、矽晶圓之製造方法及矽晶圓

Country Status (6)

Country Link
JP (1) JP6589807B2 (ja)
KR (1) KR102165589B1 (ja)
CN (1) CN110140195B (ja)
DE (1) DE112017005226T5 (ja)
TW (1) TWI680512B (ja)
WO (1) WO2018070108A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6717353B2 (ja) * 2018-10-22 2020-07-01 株式会社Sumco レーザマーク付きシリコンウェーハの製造方法
JP6939752B2 (ja) * 2018-11-19 2021-09-22 株式会社Sumco シリコンウェーハのヘリカル面取り加工方法
CN114267589A (zh) * 2021-12-27 2022-04-01 西安奕斯伟材料科技有限公司 一种晶圆表面损伤深度测量方法及系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002018684A (ja) * 2000-07-12 2002-01-22 Nippei Toyama Corp 半導体ウェーハのノッチ研削装置及び半導体ウェーハ
TWI241229B (en) * 2001-09-06 2005-10-11 Speedfam Co Ltd Semiconductor wafer grinding apparatus and wafer grinding process
TW201003764A (en) * 2008-04-15 2010-01-16 Sumco Corp Thin silicon wafer and method of manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176824A (ja) * 1999-12-17 2001-06-29 Mitsubishi Materials Silicon Corp 半導体ウェーハ、その面取り面の加工方法およびその装置
JP2002346772A (ja) * 2001-05-21 2002-12-04 Sumitomo Mitsubishi Silicon Corp レーザマーキングウェーハ
JP2003177100A (ja) * 2001-12-12 2003-06-27 Sumitomo Mitsubishi Silicon Corp 鏡面面取りウェーハの品質評価方法
JP2004281550A (ja) * 2003-03-13 2004-10-07 Dowa Mining Co Ltd 半導体ウエハおよびその面取り加工方法
JP4253643B2 (ja) 2005-03-22 2009-04-15 株式会社リガク 単結晶インゴットの位置決め用治具
JP2009016602A (ja) * 2007-07-05 2009-01-22 Denso Corp 炭化珪素半導体装置の製造方法
JP5504667B2 (ja) 2009-03-25 2014-05-28 株式会社Sumco シリコンウェーハおよびその製造方法
JP5979081B2 (ja) * 2013-05-28 2016-08-24 信越半導体株式会社 単結晶ウェーハの製造方法
JP6176855B2 (ja) 2014-05-29 2017-08-09 京セラドキュメントソリューションズ株式会社 画像形成装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002018684A (ja) * 2000-07-12 2002-01-22 Nippei Toyama Corp 半導体ウェーハのノッチ研削装置及び半導体ウェーハ
TWI241229B (en) * 2001-09-06 2005-10-11 Speedfam Co Ltd Semiconductor wafer grinding apparatus and wafer grinding process
TW201003764A (en) * 2008-04-15 2010-01-16 Sumco Corp Thin silicon wafer and method of manufacturing the same

Also Published As

Publication number Publication date
TW201820474A (zh) 2018-06-01
CN110140195A (zh) 2019-08-16
DE112017005226T5 (de) 2019-07-18
CN110140195B (zh) 2022-11-08
JP2018064046A (ja) 2018-04-19
JP6589807B2 (ja) 2019-10-16
KR20190040328A (ko) 2019-04-17
WO2018070108A1 (ja) 2018-04-19
KR102165589B1 (ko) 2020-10-14

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