TWI666091B - 化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器 - Google Patents

化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器 Download PDF

Info

Publication number
TWI666091B
TWI666091B TW104109176A TW104109176A TWI666091B TW I666091 B TWI666091 B TW I666091B TW 104109176 A TW104109176 A TW 104109176A TW 104109176 A TW104109176 A TW 104109176A TW I666091 B TWI666091 B TW I666091B
Authority
TW
Taiwan
Prior art keywords
elongated
protrusions
elongated protrusions
chemical mechanical
substrate
Prior art date
Application number
TW104109176A
Other languages
English (en)
Chinese (zh)
Other versions
TW201600241A (zh
Inventor
安德魯 葛平
丹尼爾 威爾斯
Original Assignee
美商恩特葛瑞斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商恩特葛瑞斯股份有限公司 filed Critical 美商恩特葛瑞斯股份有限公司
Publication of TW201600241A publication Critical patent/TW201600241A/zh
Application granted granted Critical
Publication of TWI666091B publication Critical patent/TWI666091B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/06Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12Dressing tools; Holders therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00Tool surfaces formed with a pattern
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104109176A 2014-03-21 2015-03-23 化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器 TWI666091B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461968846P 2014-03-21 2014-03-21
US61/968,846 2014-03-21

Publications (2)

Publication Number Publication Date
TW201600241A TW201600241A (zh) 2016-01-01
TWI666091B true TWI666091B (zh) 2019-07-21

Family

ID=54145367

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109176A TWI666091B (zh) 2014-03-21 2015-03-23 化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器

Country Status (6)

Country Link
US (1) US10293463B2 (cg-RX-API-DMAC7.html)
JP (1) JP6542793B2 (cg-RX-API-DMAC7.html)
KR (1) KR102304574B1 (cg-RX-API-DMAC7.html)
CN (1) CN106463379B (cg-RX-API-DMAC7.html)
TW (1) TWI666091B (cg-RX-API-DMAC7.html)
WO (1) WO2015143278A1 (cg-RX-API-DMAC7.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10105812B2 (en) * 2014-07-17 2018-10-23 Applied Materials, Inc. Polishing pad configuration and polishing pad support
JP6316460B2 (ja) * 2016-01-08 2018-04-25 バンドー化学株式会社 研磨材
KR102365066B1 (ko) * 2016-04-06 2022-02-18 엠 큐브드 테크놀로지스 다이아몬드 복합 cmp 패드 조절기
US10471567B2 (en) 2016-09-15 2019-11-12 Entegris, Inc. CMP pad conditioning assembly
US20180085891A1 (en) * 2016-09-29 2018-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Apparatus for shaping the surface of chemical mechanical polishing pads
TWI621503B (zh) * 2017-05-12 2018-04-21 Kinik Company Ltd. 化學機械研磨拋光墊修整器及其製造方法
US20190351527A1 (en) * 2018-05-17 2019-11-21 Entegris, Inc. Conditioner for chemical-mechanical-planarization pad and related methods
US12208487B2 (en) 2018-10-29 2025-01-28 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
US11331767B2 (en) * 2019-02-01 2022-05-17 Micron Technology, Inc. Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods
CN113439010B (zh) 2019-02-13 2024-08-27 3M创新有限公司 具有精确成形特征部的磨料元件、用其制成的磨料制品及其制造方法
JP7368492B2 (ja) * 2019-04-09 2023-10-24 インテグリス・インコーポレーテッド ディスクのセグメント設計
US11524385B2 (en) * 2019-06-07 2022-12-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad with lobed protruding structures
GB2590511B (en) * 2019-11-20 2023-10-25 Best Engineered Surface Tech Llc Hybrid CMP conditioning head
US12370648B2 (en) * 2020-01-30 2025-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Surface clean system and method
US11833638B2 (en) * 2020-03-25 2023-12-05 Rohm and Haas Electronic Materials Holding, Inc. CMP polishing pad with polishing elements on supports
WO2023055649A1 (en) * 2021-09-29 2023-04-06 Entegris, Inc. Double-sided pad conditioner

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080153398A1 (en) * 2006-11-16 2008-06-26 Chien-Min Sung Cmp pad conditioners and associated methods
US20090215366A1 (en) * 2005-08-25 2009-08-27 Hiroshi Ishizuka Tool with Sintered Body Polishing Surface and Method of Manufacturing the Same

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527424A (en) * 1995-01-30 1996-06-18 Motorola, Inc. Preconditioner for a polishing pad and method for using the same
US6302770B1 (en) * 1998-07-28 2001-10-16 Nikon Research Corporation Of America In-situ pad conditioning for CMP polisher
JP2001157967A (ja) * 1999-11-29 2001-06-12 Mitsubishi Materials Corp 単層砥石
KR100387954B1 (ko) 1999-10-12 2003-06-19 (주) 휴네텍 연마패드용 컨디셔너와 이의 제조방법
US6439986B1 (en) 1999-10-12 2002-08-27 Hunatech Co., Ltd. Conditioner for polishing pad and method for manufacturing the same
US6390909B2 (en) * 2000-04-03 2002-05-21 Rodel Holdings, Inc. Disk for conditioning polishing pads
JP2002337050A (ja) 2001-03-13 2002-11-26 Mitsubishi Materials Corp Cmpコンディショナ
KR20050075280A (ko) 2002-11-19 2005-07-20 가부시키가이샤 이시카와 세이사쿠쇼 화소제어 소자의 선택 전사 방법, 화소제어 소자의 선택전사 방법에 사용되는 화소제어 소자의 실장 장치,화소제어 소자 전사후의 배선 형성 방법, 및, 평면디스플레이 기판
KR20050092743A (ko) * 2003-01-15 2005-09-22 미츠비시 마테리알 가부시키가이샤 연질재 가공용 절삭 공구
US7367872B2 (en) * 2003-04-08 2008-05-06 Applied Materials, Inc. Conditioner disk for use in chemical mechanical polishing
CN1938128A (zh) 2004-03-31 2007-03-28 三菱综合材料株式会社 Cmp调节器
US7799375B2 (en) 2004-06-30 2010-09-21 Poco Graphite, Inc. Process for the manufacturing of dense silicon carbide
JP4145273B2 (ja) 2004-07-14 2008-09-03 株式会社ノリタケスーパーアブレーシブ Cmpパッドコンディショナー
US7066795B2 (en) * 2004-10-12 2006-06-27 Applied Materials, Inc. Polishing pad conditioner with shaped abrasive patterns and channels
US7300338B2 (en) * 2005-09-22 2007-11-27 Abrasive Technology, Inc. CMP diamond conditioning disk
TW200726582A (en) * 2005-10-04 2007-07-16 Mitsubishi Materials Corp Rotary tool for processing flexible materials
JP4441552B2 (ja) 2006-07-31 2010-03-31 メゾテクダイヤ株式会社 ダイヤモンドコンディショナ
US20170232576A1 (en) * 2006-11-16 2017-08-17 Chien-Min Sung Cmp pad conditioners with mosaic abrasive segments and associated methods
JP2008229820A (ja) * 2007-03-23 2008-10-02 Elpida Memory Inc Cmp加工用のドレッサ及びcmp加工装置並びにcmp加工用の研磨パッドのドレッシング処理方法
CN101903131B (zh) * 2007-11-13 2013-01-02 宋健民 Cmp垫修整器
JP2009241200A (ja) 2008-03-31 2009-10-22 Mitsubishi Materials Corp Cmpコンディショナ
EP2474025A2 (en) * 2009-09-01 2012-07-11 Saint-Gobain Abrasives, Inc. Chemical mechanical polishing conditioner
KR101091030B1 (ko) * 2010-04-08 2011-12-09 이화다이아몬드공업 주식회사 감소된 마찰력을 갖는 패드 컨디셔너 제조방법
JP5871904B2 (ja) 2010-04-12 2016-03-01 イコニクス コーポレーションIkonics Corporation アブレシブエッチングおよびカッティングのためのフォトレジスト膜および方法
CN101972995B (zh) 2010-06-08 2013-05-01 沈阳理工大学 一种仿生表面结构抛光垫及制造方法
SG193340A1 (en) * 2011-03-07 2013-10-30 Entegris Inc Chemical mechanical planarization pad conditioner
KR101211138B1 (ko) 2011-03-07 2012-12-11 이화다이아몬드공업 주식회사 연약패드용 컨디셔너 및 그 제조방법
KR101144981B1 (ko) 2011-05-17 2012-05-11 삼성전자주식회사 Cmp 패드 컨디셔너 및 상기 cmp 패드 컨디셔너 제조방법
CN110328616A (zh) 2012-05-04 2019-10-15 恩特格里斯公司 具有超硬磨料增强的化学机械平坦化修整器衬垫
TWI564116B (zh) * 2013-08-12 2017-01-01 Sapphire polishing pad dresser with multiple trimmed pellets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090215366A1 (en) * 2005-08-25 2009-08-27 Hiroshi Ishizuka Tool with Sintered Body Polishing Surface and Method of Manufacturing the Same
US20080153398A1 (en) * 2006-11-16 2008-06-26 Chien-Min Sung Cmp pad conditioners and associated methods

Also Published As

Publication number Publication date
CN106463379B (zh) 2019-08-06
CN106463379A (zh) 2017-02-22
JP6542793B2 (ja) 2019-07-10
US10293463B2 (en) 2019-05-21
KR20160136404A (ko) 2016-11-29
JP2017509500A (ja) 2017-04-06
US20170095903A1 (en) 2017-04-06
WO2015143278A1 (en) 2015-09-24
KR102304574B1 (ko) 2021-09-27
TW201600241A (zh) 2016-01-01

Similar Documents

Publication Publication Date Title
TWI666091B (zh) 化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器
US9616547B2 (en) Chemical mechanical planarization pad conditioner
US8622787B2 (en) CMP pad dressers with hybridized abrasive surface and related methods
US9067301B2 (en) CMP pad dressers with hybridized abrasive surface and related methods
EP2845221B1 (en) Cmp conditioner pads with superabrasive grit enhancement
CN101367203B (zh) 具有控制的润湿的化学机械抛光垫
KR101091030B1 (ko) 감소된 마찰력을 갖는 패드 컨디셔너 제조방법
US20150017884A1 (en) CMP Pad Dressers with Hybridized Abrasive Surface and Related Methods
KR101178281B1 (ko) 감소된 마찰력을 갖는 패드 컨디셔너
TW202134004A (zh) 混合化學機械拋光調節頭
Tsai Blade diamond disk for conditioning CMP polishing pad