TWI666091B - 化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器 - Google Patents
化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器 Download PDFInfo
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- TWI666091B TWI666091B TW104109176A TW104109176A TWI666091B TW I666091 B TWI666091 B TW I666091B TW 104109176 A TW104109176 A TW 104109176A TW 104109176 A TW104109176 A TW 104109176A TW I666091 B TWI666091 B TW I666091B
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- Prior art keywords
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- elongated protrusions
- chemical mechanical
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Links
- 239000000126 substance Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000003750 conditioning effect Effects 0.000 title description 6
- 238000005498 polishing Methods 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000010408 sweeping Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 abstract description 23
- 238000005520 cutting process Methods 0.000 abstract description 10
- 230000001105 regulatory effect Effects 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 34
- 229910010271 silicon carbide Inorganic materials 0.000 description 29
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 21
- 239000002245 particle Substances 0.000 description 20
- 229910002804 graphite Inorganic materials 0.000 description 19
- 239000010439 graphite Substances 0.000 description 19
- 238000009304 pastoral farming Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 238000000227 grinding Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000003754 machining Methods 0.000 description 5
- 229910021426 porous silicon Inorganic materials 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
- B24D5/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D2203/00—Tool surfaces formed with a pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461968846P | 2014-03-21 | 2014-03-21 | |
| US61/968,846 | 2014-03-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201600241A TW201600241A (zh) | 2016-01-01 |
| TWI666091B true TWI666091B (zh) | 2019-07-21 |
Family
ID=54145367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104109176A TWI666091B (zh) | 2014-03-21 | 2015-03-23 | 化學機械硏磨調節段及其製造方法,以及化學機械硏磨墊調節器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10293463B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6542793B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102304574B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN106463379B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI666091B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2015143278A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10105812B2 (en) * | 2014-07-17 | 2018-10-23 | Applied Materials, Inc. | Polishing pad configuration and polishing pad support |
| JP6316460B2 (ja) * | 2016-01-08 | 2018-04-25 | バンドー化学株式会社 | 研磨材 |
| KR102365066B1 (ko) * | 2016-04-06 | 2022-02-18 | 엠 큐브드 테크놀로지스 | 다이아몬드 복합 cmp 패드 조절기 |
| US10471567B2 (en) | 2016-09-15 | 2019-11-12 | Entegris, Inc. | CMP pad conditioning assembly |
| US20180085891A1 (en) * | 2016-09-29 | 2018-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Apparatus for shaping the surface of chemical mechanical polishing pads |
| TWI621503B (zh) * | 2017-05-12 | 2018-04-21 | Kinik Company Ltd. | 化學機械研磨拋光墊修整器及其製造方法 |
| US20190351527A1 (en) * | 2018-05-17 | 2019-11-21 | Entegris, Inc. | Conditioner for chemical-mechanical-planarization pad and related methods |
| US12208487B2 (en) | 2018-10-29 | 2025-01-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus and method |
| US11331767B2 (en) * | 2019-02-01 | 2022-05-17 | Micron Technology, Inc. | Pads for chemical mechanical planarization tools, chemical mechanical planarization tools, and related methods |
| CN113439010B (zh) | 2019-02-13 | 2024-08-27 | 3M创新有限公司 | 具有精确成形特征部的磨料元件、用其制成的磨料制品及其制造方法 |
| JP7368492B2 (ja) * | 2019-04-09 | 2023-10-24 | インテグリス・インコーポレーテッド | ディスクのセグメント設計 |
| US11524385B2 (en) * | 2019-06-07 | 2022-12-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad with lobed protruding structures |
| GB2590511B (en) * | 2019-11-20 | 2023-10-25 | Best Engineered Surface Tech Llc | Hybrid CMP conditioning head |
| US12370648B2 (en) * | 2020-01-30 | 2025-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface clean system and method |
| US11833638B2 (en) * | 2020-03-25 | 2023-12-05 | Rohm and Haas Electronic Materials Holding, Inc. | CMP polishing pad with polishing elements on supports |
| WO2023055649A1 (en) * | 2021-09-29 | 2023-04-06 | Entegris, Inc. | Double-sided pad conditioner |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080153398A1 (en) * | 2006-11-16 | 2008-06-26 | Chien-Min Sung | Cmp pad conditioners and associated methods |
| US20090215366A1 (en) * | 2005-08-25 | 2009-08-27 | Hiroshi Ishizuka | Tool with Sintered Body Polishing Surface and Method of Manufacturing the Same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5527424A (en) * | 1995-01-30 | 1996-06-18 | Motorola, Inc. | Preconditioner for a polishing pad and method for using the same |
| US6302770B1 (en) * | 1998-07-28 | 2001-10-16 | Nikon Research Corporation Of America | In-situ pad conditioning for CMP polisher |
| JP2001157967A (ja) * | 1999-11-29 | 2001-06-12 | Mitsubishi Materials Corp | 単層砥石 |
| KR100387954B1 (ko) | 1999-10-12 | 2003-06-19 | (주) 휴네텍 | 연마패드용 컨디셔너와 이의 제조방법 |
| US6439986B1 (en) | 1999-10-12 | 2002-08-27 | Hunatech Co., Ltd. | Conditioner for polishing pad and method for manufacturing the same |
| US6390909B2 (en) * | 2000-04-03 | 2002-05-21 | Rodel Holdings, Inc. | Disk for conditioning polishing pads |
| JP2002337050A (ja) | 2001-03-13 | 2002-11-26 | Mitsubishi Materials Corp | Cmpコンディショナ |
| KR20050075280A (ko) | 2002-11-19 | 2005-07-20 | 가부시키가이샤 이시카와 세이사쿠쇼 | 화소제어 소자의 선택 전사 방법, 화소제어 소자의 선택전사 방법에 사용되는 화소제어 소자의 실장 장치,화소제어 소자 전사후의 배선 형성 방법, 및, 평면디스플레이 기판 |
| KR20050092743A (ko) * | 2003-01-15 | 2005-09-22 | 미츠비시 마테리알 가부시키가이샤 | 연질재 가공용 절삭 공구 |
| US7367872B2 (en) * | 2003-04-08 | 2008-05-06 | Applied Materials, Inc. | Conditioner disk for use in chemical mechanical polishing |
| CN1938128A (zh) | 2004-03-31 | 2007-03-28 | 三菱综合材料株式会社 | Cmp调节器 |
| US7799375B2 (en) | 2004-06-30 | 2010-09-21 | Poco Graphite, Inc. | Process for the manufacturing of dense silicon carbide |
| JP4145273B2 (ja) | 2004-07-14 | 2008-09-03 | 株式会社ノリタケスーパーアブレーシブ | Cmpパッドコンディショナー |
| US7066795B2 (en) * | 2004-10-12 | 2006-06-27 | Applied Materials, Inc. | Polishing pad conditioner with shaped abrasive patterns and channels |
| US7300338B2 (en) * | 2005-09-22 | 2007-11-27 | Abrasive Technology, Inc. | CMP diamond conditioning disk |
| TW200726582A (en) * | 2005-10-04 | 2007-07-16 | Mitsubishi Materials Corp | Rotary tool for processing flexible materials |
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| US20170232576A1 (en) * | 2006-11-16 | 2017-08-17 | Chien-Min Sung | Cmp pad conditioners with mosaic abrasive segments and associated methods |
| JP2008229820A (ja) * | 2007-03-23 | 2008-10-02 | Elpida Memory Inc | Cmp加工用のドレッサ及びcmp加工装置並びにcmp加工用の研磨パッドのドレッシング処理方法 |
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| EP2474025A2 (en) * | 2009-09-01 | 2012-07-11 | Saint-Gobain Abrasives, Inc. | Chemical mechanical polishing conditioner |
| KR101091030B1 (ko) * | 2010-04-08 | 2011-12-09 | 이화다이아몬드공업 주식회사 | 감소된 마찰력을 갖는 패드 컨디셔너 제조방법 |
| JP5871904B2 (ja) | 2010-04-12 | 2016-03-01 | イコニクス コーポレーションIkonics Corporation | アブレシブエッチングおよびカッティングのためのフォトレジスト膜および方法 |
| CN101972995B (zh) | 2010-06-08 | 2013-05-01 | 沈阳理工大学 | 一种仿生表面结构抛光垫及制造方法 |
| SG193340A1 (en) * | 2011-03-07 | 2013-10-30 | Entegris Inc | Chemical mechanical planarization pad conditioner |
| KR101211138B1 (ko) | 2011-03-07 | 2012-12-11 | 이화다이아몬드공업 주식회사 | 연약패드용 컨디셔너 및 그 제조방법 |
| KR101144981B1 (ko) | 2011-05-17 | 2012-05-11 | 삼성전자주식회사 | Cmp 패드 컨디셔너 및 상기 cmp 패드 컨디셔너 제조방법 |
| CN110328616A (zh) | 2012-05-04 | 2019-10-15 | 恩特格里斯公司 | 具有超硬磨料增强的化学机械平坦化修整器衬垫 |
| TWI564116B (zh) * | 2013-08-12 | 2017-01-01 | Sapphire polishing pad dresser with multiple trimmed pellets |
-
2015
- 2015-03-20 JP JP2016558346A patent/JP6542793B2/ja active Active
- 2015-03-20 WO PCT/US2015/021679 patent/WO2015143278A1/en not_active Ceased
- 2015-03-20 CN CN201580026005.4A patent/CN106463379B/zh active Active
- 2015-03-20 KR KR1020167029446A patent/KR102304574B1/ko active Active
- 2015-03-20 US US15/128,021 patent/US10293463B2/en active Active
- 2015-03-23 TW TW104109176A patent/TWI666091B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090215366A1 (en) * | 2005-08-25 | 2009-08-27 | Hiroshi Ishizuka | Tool with Sintered Body Polishing Surface and Method of Manufacturing the Same |
| US20080153398A1 (en) * | 2006-11-16 | 2008-06-26 | Chien-Min Sung | Cmp pad conditioners and associated methods |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106463379B (zh) | 2019-08-06 |
| CN106463379A (zh) | 2017-02-22 |
| JP6542793B2 (ja) | 2019-07-10 |
| US10293463B2 (en) | 2019-05-21 |
| KR20160136404A (ko) | 2016-11-29 |
| JP2017509500A (ja) | 2017-04-06 |
| US20170095903A1 (en) | 2017-04-06 |
| WO2015143278A1 (en) | 2015-09-24 |
| KR102304574B1 (ko) | 2021-09-27 |
| TW201600241A (zh) | 2016-01-01 |
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