TWI664738B - 用於鰭片為主之電子元件的固態源極擴散接面 - Google Patents

用於鰭片為主之電子元件的固態源極擴散接面 Download PDF

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Publication number
TWI664738B
TWI664738B TW107111952A TW107111952A TWI664738B TW I664738 B TWI664738 B TW I664738B TW 107111952 A TW107111952 A TW 107111952A TW 107111952 A TW107111952 A TW 107111952A TW I664738 B TWI664738 B TW I664738B
Authority
TW
Taiwan
Prior art keywords
fin
end portion
insulating oxide
side wall
glass
Prior art date
Application number
TW107111952A
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English (en)
Chinese (zh)
Other versions
TW201828482A (zh
Inventor
瓦力德 賀菲斯
嘉弘 簡
Original Assignee
美商英特爾股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商英特爾股份有限公司 filed Critical 美商英特爾股份有限公司
Publication of TW201828482A publication Critical patent/TW201828482A/zh
Application granted granted Critical
Publication of TWI664738B publication Critical patent/TWI664738B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/025—Manufacture or treatment of resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
TW107111952A 2014-07-14 2015-06-08 用於鰭片為主之電子元件的固態源極擴散接面 TWI664738B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/US14/46525 2014-07-14
PCT/US2014/046525 WO2016010515A1 (en) 2014-07-14 2014-07-14 Solid-source diffused junction for fin-based electronics

Publications (2)

Publication Number Publication Date
TW201828482A TW201828482A (zh) 2018-08-01
TWI664738B true TWI664738B (zh) 2019-07-01

Family

ID=55078851

Family Applications (3)

Application Number Title Priority Date Filing Date
TW107111952A TWI664738B (zh) 2014-07-14 2015-06-08 用於鰭片為主之電子元件的固態源極擴散接面
TW104118477A TWI600166B (zh) 2014-07-14 2015-06-08 用於鰭片為主之電子元件的固態源極擴散接面
TW106111403A TWI628801B (zh) 2014-07-14 2015-06-08 用於鰭片為主之電子元件的固態源極擴散接面

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW104118477A TWI600166B (zh) 2014-07-14 2015-06-08 用於鰭片為主之電子元件的固態源極擴散接面
TW106111403A TWI628801B (zh) 2014-07-14 2015-06-08 用於鰭片為主之電子元件的固態源極擴散接面

Country Status (7)

Country Link
US (6) US9842944B2 (OSRAM)
EP (2) EP3300119A1 (OSRAM)
JP (1) JP6399464B2 (OSRAM)
KR (1) KR102241181B1 (OSRAM)
CN (2) CN112670349B (OSRAM)
TW (3) TWI664738B (OSRAM)
WO (1) WO2016010515A1 (OSRAM)

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CN112670349B (zh) * 2014-07-14 2024-09-17 太浩研究有限公司 用于基于鳍状物的电子设备的固体源扩散结
WO2016209206A1 (en) * 2015-06-22 2016-12-29 Intel Corporation Dual height glass for finfet doping
US9847388B2 (en) * 2015-09-01 2017-12-19 International Business Machines Corporation High thermal budget compatible punch through stop integration using doped glass
US9976650B1 (en) * 2017-02-01 2018-05-22 Deere & Company Forkless synchronizer with sensor rail arrangement
CN110352496B (zh) * 2017-03-30 2024-11-19 英特尔公司 鳍状物中的垂直叠置晶体管
US10401122B2 (en) 2017-06-08 2019-09-03 Springfield, Inc. Free floating handguard anchoring system
US20190172920A1 (en) * 2017-12-06 2019-06-06 Nanya Technology Corporation Junctionless transistor device and method for preparing the same
WO2019132876A1 (en) * 2017-12-27 2019-07-04 Intel Corporation Finfet based capacitors and resistors and related apparatuses, systems, and methods
US10325819B1 (en) * 2018-03-13 2019-06-18 Globalfoundries Inc. Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
KR102813445B1 (ko) * 2019-10-02 2025-05-27 삼성전자주식회사 집적회로 소자 및 그 제조 방법
CN113921520B (zh) * 2021-09-29 2024-08-06 上海晶丰明源半导体股份有限公司 射频开关器件及其制造方法

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US20120168913A1 (en) * 2010-12-29 2012-07-05 Globalfoundries Singapore Pte. Ltd. Finfet

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US7235436B1 (en) * 2003-07-08 2007-06-26 Advanced Micro Devices, Inc. Method for doping structures in FinFET devices
US20110049613A1 (en) * 2009-09-01 2011-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type finfet, circuits and fabrication method thereof
US20120168913A1 (en) * 2010-12-29 2012-07-05 Globalfoundries Singapore Pte. Ltd. Finfet

Also Published As

Publication number Publication date
US20180158906A1 (en) 2018-06-07
KR102241181B1 (ko) 2021-04-16
EP3170207A1 (en) 2017-05-24
US11764260B2 (en) 2023-09-19
WO2016010515A1 (en) 2016-01-21
US9899472B2 (en) 2018-02-20
CN106471624B (zh) 2021-01-05
TW201828482A (zh) 2018-08-01
JP6399464B2 (ja) 2018-10-03
TWI628801B (zh) 2018-07-01
US20170018658A1 (en) 2017-01-19
US20200335582A1 (en) 2020-10-22
EP3170207A4 (en) 2018-03-28
CN112670349B (zh) 2024-09-17
US11139370B2 (en) 2021-10-05
US20170133461A1 (en) 2017-05-11
US20220102488A1 (en) 2022-03-31
JP2017527099A (ja) 2017-09-14
EP3300119A1 (en) 2018-03-28
US10355081B2 (en) 2019-07-16
US9842944B2 (en) 2017-12-12
TW201727926A (zh) 2017-08-01
US20190296105A1 (en) 2019-09-26
US10741640B2 (en) 2020-08-11
KR20170028882A (ko) 2017-03-14
CN112670349A (zh) 2021-04-16
CN106471624A (zh) 2017-03-01
TW201614852A (en) 2016-04-16
TWI600166B (zh) 2017-09-21

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