TWI660416B - Wafer processing method and intermediate member - Google Patents

Wafer processing method and intermediate member Download PDF

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Publication number
TWI660416B
TWI660416B TW104111929A TW104111929A TWI660416B TW I660416 B TWI660416 B TW I660416B TW 104111929 A TW104111929 A TW 104111929A TW 104111929 A TW104111929 A TW 104111929A TW I660416 B TWI660416 B TW I660416B
Authority
TW
Taiwan
Prior art keywords
wafer
central region
intermediate member
support plate
grinding
Prior art date
Application number
TW104111929A
Other languages
English (en)
Chinese (zh)
Other versions
TW201606869A (zh
Inventor
卡爾 皮拉瓦瑟
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201606869A publication Critical patent/TW201606869A/zh
Application granted granted Critical
Publication of TWI660416B publication Critical patent/TWI660416B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW104111929A 2014-05-16 2015-04-14 Wafer processing method and intermediate member TWI660416B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-101965 2014-05-16
JP2014101965A JP6385133B2 (ja) 2014-05-16 2014-05-16 ウェーハの加工方法及び中間部材

Publications (2)

Publication Number Publication Date
TW201606869A TW201606869A (zh) 2016-02-16
TWI660416B true TWI660416B (zh) 2019-05-21

Family

ID=54361920

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104111929A TWI660416B (zh) 2014-05-16 2015-04-14 Wafer processing method and intermediate member

Country Status (5)

Country Link
JP (1) JP6385133B2 (ko)
KR (2) KR102455708B1 (ko)
CN (1) CN105097631B (ko)
DE (1) DE102015208977A1 (ko)
TW (1) TWI660416B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
JP6906843B2 (ja) * 2017-04-28 2021-07-21 株式会社ディスコ ウェーハの加工方法
JP6914587B2 (ja) * 2017-05-25 2021-08-04 株式会社ディスコ ウェーハの加工方法
DE102018200656A1 (de) 2018-01-16 2019-07-18 Disco Corporation Verfahren zum Bearbeiten eines Wafers
DE112020000935T5 (de) * 2019-02-26 2021-11-04 Denka Company Limited Klebefolie zum Rückseitenschleifen und Verfahren zur Herstellung von Halbleiterwafern
JP7477325B2 (ja) * 2020-03-06 2024-05-01 株式会社ディスコ 加工方法
CN111730775B (zh) * 2020-07-20 2024-07-23 天津城建大学 适用于金刚石线切割机微型化分割的晶片载物板及方法
JP7511980B2 (ja) 2020-07-21 2024-07-08 株式会社ディスコ キャリア板の除去方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188010A (ja) * 2008-02-04 2009-08-20 Lintec Corp 脆質部材用支持体および脆質部材の処理方法
JP2014053351A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198542A (ja) 1991-09-02 1993-08-06 Mitsui Toatsu Chem Inc 半導体ウエハの裏面研削方法および該方法に用いる粘着テープ
JP2004207606A (ja) 2002-12-26 2004-07-22 Disco Abrasive Syst Ltd ウェーハサポートプレート
TWI320583B (en) * 2003-12-26 2010-02-11 Advanced Semiconductor Eng Process for backside grinding a bumped wafer
JP2008060361A (ja) * 2006-08-31 2008-03-13 Nitto Denko Corp 半導体ウェハの加工方法、及びそれに用いる半導体ウェハ加工用粘着シート
JP4779924B2 (ja) 2006-10-20 2011-09-28 ソニー株式会社 半導体装置の製造方法
PT2238618E (pt) * 2008-01-24 2015-09-03 Brewer Science Inc Método para montagem reversível de uma bolacha de dispositivo num substrato de suporte
JP5501060B2 (ja) * 2009-04-02 2014-05-21 日東電工株式会社 半導体ウエハ保護用粘着シートの貼り合わせ方法、及びこの貼り合わせ方法に用いる半導体ウエハ保護用粘着シート
JP2011119524A (ja) * 2009-12-04 2011-06-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2012084780A (ja) * 2010-10-14 2012-04-26 Renesas Electronics Corp 半導体装置の製造方法
JP5946260B2 (ja) 2011-11-08 2016-07-06 株式会社ディスコ ウエーハの加工方法
JP5840003B2 (ja) * 2012-01-23 2016-01-06 株式会社ディスコ ウエーハの加工方法
JP2014017462A (ja) * 2012-03-02 2014-01-30 Fujifilm Corp 半導体装置の製造方法
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188010A (ja) * 2008-02-04 2009-08-20 Lintec Corp 脆質部材用支持体および脆質部材の処理方法
JP2014053351A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法

Also Published As

Publication number Publication date
KR102455708B1 (ko) 2022-10-17
KR102432506B1 (ko) 2022-08-12
CN105097631A (zh) 2015-11-25
DE102015208977A1 (de) 2015-11-19
TW201606869A (zh) 2016-02-16
CN105097631B (zh) 2020-10-27
JP6385133B2 (ja) 2018-09-05
KR20150131964A (ko) 2015-11-25
JP2015220303A (ja) 2015-12-07
KR20210075049A (ko) 2021-06-22

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