TWI660416B - Wafer processing method and intermediate member - Google Patents
Wafer processing method and intermediate member Download PDFInfo
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- TWI660416B TWI660416B TW104111929A TW104111929A TWI660416B TW I660416 B TWI660416 B TW I660416B TW 104111929 A TW104111929 A TW 104111929A TW 104111929 A TW104111929 A TW 104111929A TW I660416 B TWI660416 B TW I660416B
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- wafer
- central region
- intermediate member
- support plate
- grinding
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- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract 2
- 239000000853 adhesive Substances 0.000 abstract description 16
- 230000001070 adhesive effect Effects 0.000 abstract description 16
- 230000001681 protective effect Effects 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002390 adhesive tape Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本發明的課題是提供一種在保護構件剝離時，不會使膠料或接著劑殘留在凸塊間，並且保護構件的剝離也較容易的晶圓之加工方法。解決手段是一種晶圓之加工方法，該晶圓在表面上具有中央區域及圍繞該中央區域的外周剩餘區域，其中該中央區域配置有複數個各自形成有複數個凸塊的元件，該晶圓之加工方法的特徵為具有中間構件準備步驟、貼附步驟、磨削步驟及剝離步驟。該中間構件準備步驟是準備具有對應於晶圓的該中央區域的柔軟構件，及配置在該柔軟構件的外周緣的接著構件之中間構件。該貼附步驟是透過該接著構件將該中間構件貼附在支撐板上，並且在已貼附於該支撐板上的中間構件上，透過該接著構件以使晶圓的該中央區域抵接於該柔軟構件的狀態來貼附晶圓。該磨削步驟是在實施該貼附步驟後，磨削晶圓的背面。該剝離步驟是在實施該磨削步驟後，將晶圓從該支撐板剝離。 An object of the present invention is to provide a method for processing a wafer without peeling off the protective member or the adhesive between the bumps when the protective member is peeled off, and the peeling off of the protective member is easy. The solution is a method of processing a wafer. The wafer has a central region on the surface and a peripheral peripheral region surrounding the central region. The central region is provided with a plurality of elements each having a plurality of bumps formed thereon. The processing method is characterized by having an intermediate member preparing step, an attaching step, a grinding step, and a peeling step. The intermediate member preparation step is to prepare an intermediate member having a flexible member corresponding to the central region of the wafer and an adhering member disposed on an outer peripheral edge of the flexible member. In the attaching step, the intermediate member is attached to the support plate through the adhesive member, and the intermediate member that has been attached to the support plate is passed through the adhesive member so that the central region of the wafer abuts on the intermediate member. The flexible member is attached to the wafer. The grinding step is to grind the back surface of the wafer after performing the attaching step. The peeling step is to peel the wafer from the support plate after the grinding step is performed.
Description
本發明是有關於各元件具有複數個凸塊的晶圓之加工方法及在該加工方法中所使用的中間構件。 The present invention relates to a method for processing a wafer having a plurality of bumps on each element, and an intermediate member used in the method.
表面上形成有IC、LSI等大量的元件，並且將一個個元件以形成為格子狀的複數條分割預定線(切割道)予以區劃之半導體晶圓，是藉由磨削裝置磨削背面而被加工成預定的厚度後，再藉由切削裝置(切割(Dicing)裝置)切削分割預定線而被分割成一個個元件，被分割的元件廣泛地利用於行動電話、個人電腦等各種電子機器上。 A semiconductor wafer having a large number of components such as ICs and LSIs formed on the surface, and divided by a plurality of predetermined division lines (cut lines) formed in a grid pattern, is used to grind the back surface by a grinding device. After processing to a predetermined thickness, the cutting device (Dicing device) cuts a predetermined dividing line to be divided into individual components. The divided components are widely used in various electronic devices such as mobile phones and personal computers.
磨削晶圓之背面的磨削裝置，具備有保持晶圓的工作夾台，及將具有用以磨削保持在該工作夾台上的晶圓的磨削磨石之磨削輪裝設成可旋轉的磨削手段，而可以將晶圓高精度地磨削成所期望的厚度。 A grinding device for grinding the back surface of a wafer includes a work chuck for holding the wafer and a grinding wheel having a grinding wheel for grinding the wafer held on the work chuck. The rotatable grinding method can grind the wafer to a desired thickness with high accuracy.
為了磨削晶圓的背面，因為必須要將形成有大量元件的晶圓表面側吸引保持在工作夾台上，因此通常會在晶圓的表面貼附保護膠帶以免損傷元件(參考例如日本專利特開平5-198542號公報)。 In order to grind the back surface of the wafer, the wafer surface side on which a large number of components are formed must be attracted and held on the work clamp table. Therefore, a protective tape is usually attached to the surface of the wafer to prevent damage to the components (refer to, for example, Japanese Patent Kaiping No. 5-198542).
近年來，電子機器有小型化、薄型化的傾向，而 被安裝在內的半導體元件也被要求小型化、薄型化。然而，當磨削晶圓的背面而將晶圓薄化到例如100μm以下、甚至到50μm以下時，會因為剛性顯著地降低而使之後的處理變得非常困難。此外，有時還有在晶圓上產生翹曲，並且因為翹曲而導致晶圓本身破損的疑慮。 In recent years, electronic devices have tended to be smaller and thinner. The mounted semiconductor elements are also required to be reduced in size and thickness. However, when the back surface of the wafer is ground and the wafer is thinned to, for example, 100 μm or less, or even 50 μm or less, subsequent processing becomes very difficult because the rigidity is significantly reduced. In addition, there is a concern that warpage may occur on the wafer and the wafer may be damaged due to the warpage.
為了解決這樣的問題，而採用了晶圓支撐系統 (WSS)。在WSS中，是預先使用接著劑將具有剛性的保護構件貼附在晶圓的表面側之後，再磨削晶圓的背面以將其薄化成預定厚度(參照例如日本專利特開2004-207606號公報)。 In order to solve such problems, a wafer support system is used (WSS). In the WSS, a protective member having rigidity is attached to the surface side of the wafer in advance using an adhesive, and then the back surface of the wafer is ground to thin it to a predetermined thickness (see, for example, Japanese Patent Laid-Open No. 2004-207606). Bulletin).
專利文獻1：日本專利特開平5-198542號公報 Patent Document 1: Japanese Patent Laid-Open No. 5-198542
專利文獻2：日本專利特開2004-207606號公報 Patent Document 2: Japanese Patent Laid-Open No. 2004-207606
然而，要使晶圓能夠不破損地從保護膠帶或WSS的保護構件上剝離是很困難的，特別是近年來，因為晶圓的大口徑化或完成品厚度薄化之傾向，因此要使晶圓沒有破損地從保護構件上剝離就變得較困難。又，將晶圓從保護構件剝離後，也會有膠料或接著劑殘留於元件的表面的問題。 However, it is difficult to peel the wafer from the protective tape or the protective member of the WSS without damage. Especially in recent years, because of the tendency of the wafer to become larger in diameter or the thickness of the finished product to be thinner, the It becomes difficult to peel the circle from the protective member without damage. In addition, after the wafer is peeled from the protective member, there is also a problem that a glue or an adhesive remains on the surface of the element.
特別是，在各元件上形成有複數個凸塊的晶圓上， 除了因凸塊的凹凸而難以將晶圓平坦地貼附在保護構件上之外，還有導致在凸塊間殘留膠料或接著劑的問題。 In particular, on a wafer having a plurality of bumps formed on each element, In addition to the unevenness of the bumps, it is difficult to flatly attach the wafer to the protection member, and there is a problem that a glue or an adhesive is left between the bumps.
本發明是有鑒於這個問題點而作成的發明，其目 的在於提供一種在保護構件剝離時，不會使膠料或接著劑殘留在凸塊間，並且保護構件的剝離也較容易的晶圓之加工方法。 The present invention has been made in view of this problem, and its purpose is to The purpose of the present invention is to provide a method for processing a wafer that does not allow glue or adhesive to remain between bumps when the protective member is peeled off, and that peeling off the protective member is also easy.
依據請求項1記載的發明，提供一種晶圓之加工方法，該晶圓於表面上具有中央區域及圍繞該中央區域的外周剩餘區域，其中該中央區域配置有複數個各自形成有複數個凸塊的元件。該晶圓之加工方法的特徵在於包括：中間構件準備步驟，準備具有對應於晶圓的該中央區域的柔軟構件，及配置在該柔軟構件的外周緣的接著構件之中間構件；貼附步驟，透過該接著構件將該中間構件貼附在支撐板上，並且在已貼附於該支撐板上的中間構件上，透過該接著構件以使晶圓的該中央區域抵接於該柔軟構件的狀態來貼附晶圓；磨削步驟，在實施該貼附步驟後，磨削晶圓的背面；以及剝離步驟，在實施該磨削步驟後，將晶圓從該支撐板剝離。 According to the invention described in claim 1, a method for processing a wafer is provided. The wafer has a central region on the surface and a peripheral peripheral region surrounding the central region, wherein the central region is provided with a plurality of bumps each formed with a plurality of bumps. Of components. The method for processing a wafer is characterized in that it includes a step of preparing an intermediate member, preparing a flexible member corresponding to the central region of the wafer, and an intermediate member of an adhering member disposed on an outer periphery of the flexible member; an attaching step, The intermediate member is attached to the support plate through the adhesive member, and the intermediate member that has been attached to the support plate is passed through the adhesive member so that the central region of the wafer abuts the soft member. To attach the wafer; a grinding step to grind the back surface of the wafer after performing the attaching step; and a peeling step to peel the wafer from the support plate after performing the grinding step.
依據請求項3記載的發明，提供一種在表面上具 有中央區域及圍繞該中央區域的外周剩餘區域的晶圓之加工方法中使用的中間構件，其中該中央區域配置有複數個各自形成有複數個凸塊的元件。該中間構件的特徵在於具備：對應於晶圓的該中央區域的柔軟構件，及配置在該柔軟構件之外周緣的對應於晶圓之該外周剩餘區域的接著構件。 According to the invention described in claim 3, there is provided a surface An intermediate member used in a method for processing a wafer having a central region and a peripheral remaining region surrounding the central region, wherein the central region is provided with a plurality of elements each formed with a plurality of bumps. The intermediate member is characterized by including a flexible member corresponding to the central region of the wafer, and an adhering member disposed on the outer periphery of the flexible member and corresponding to the remaining region of the outer periphery of the wafer.
依據本發明的晶圓之加工方法，可透過所貼附之中間構件將晶圓貼附在支撐板上，且該中間構件具備對應於晶圓的中央區域的柔軟構件，及配置在柔軟構件的外周緣的接著構件。 According to the wafer processing method of the present invention, the wafer can be attached to the support plate through the attached intermediate member, and the intermediate member includes a flexible member corresponding to a central region of the wafer, and a flexible member disposed on the flexible member. Adhesive member on the outer periphery.
因此，由於可在不使膠料或接著劑介入晶圓的中央區域的情形下，透過中間構件將晶圓貼附在支撐板上，所以將晶圓從支撐板上剝離時，不會有在凸塊間殘留膠料或接著劑之情形。 Therefore, since the wafer can be attached to the support plate through the intermediate member without the glue or the adhesive intervening in the central region of the wafer, there is no problem in removing the wafer from the support plate. When the rubber or adhesive remains between the bumps.
因為是藉由配置在柔軟構件之外周緣的接著構件來將晶圓接著在支撐板上，因此要將晶圓從支撐板剝離也很容易。又，因為晶圓是在柔軟構件抵接於晶圓之中央區域的狀態下被貼附於支撐板上，因此可在凸塊的凹凸被柔軟構件所吸收而使晶圓的背面形成平坦化的狀態下被貼附在支撐板上。 Since the wafer is bonded to the support plate by a bonding member disposed on the outer periphery of the flexible member, it is easy to peel the wafer from the support plate. In addition, since the wafer is attached to the support plate with the flexible member abutting the central region of the wafer, the unevenness of the bumps can be absorbed by the flexible member to flatten the back surface of the wafer. It is attached to a support plate in a state.
11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer
11a‧‧‧晶圓表面 11a‧‧‧ wafer surface
11b‧‧‧晶圓背面 11b‧‧‧ back of wafer
11e‧‧‧倒角部 11e‧‧‧Chamfer
12‧‧‧支撐板 12‧‧‧ support plate
13‧‧‧切割道 13‧‧‧cut road
14、14A‧‧‧中間構件 14, 14A‧‧‧ Intermediate member
15‧‧‧元件 15‧‧‧ components
16‧‧‧柔軟構件 16‧‧‧ soft member
17‧‧‧凸塊 17‧‧‧ bump
18‧‧‧接著構件 18‧‧‧ followed by component
19‧‧‧中央區域(凸塊形成區域) 19‧‧‧ Central area (bump formation area)
20‧‧‧膠帶 20‧‧‧Tape
21‧‧‧外周剩餘區域(凸塊未形成區域) 21‧‧‧Peripheral remaining area (bump unformed area)
22、50、50A‧‧‧切削單元 22, 50, 50A‧‧‧ Cutting Unit
24、38、52‧‧‧主軸 24, 38, 52‧‧‧ spindle
26‧‧‧安裝座 26‧‧‧Mount
28‧‧‧刀具輪 28‧‧‧Cutter wheel
30‧‧‧刀具工具 30‧‧‧Tools
32、48‧‧‧工作夾台 32, 48‧‧‧ work clamp
36‧‧‧磨削單元 36‧‧‧Grinding unit
40‧‧‧輪座 40‧‧‧wheel seat
41‧‧‧螺絲 41‧‧‧Screw
42‧‧‧磨削輪 42‧‧‧Grinding Wheel
44‧‧‧輪基台 44‧‧‧ round abutment
46‧‧‧磨削磨石 46‧‧‧Grinding grinding stone
54‧‧‧切削刀 54‧‧‧Cutter
a、b、A、R1‧‧‧箭頭 a, b, A, R1‧‧‧ arrows
F‧‧‧環狀框架 F‧‧‧ ring frame
T‧‧‧切割膠帶 T‧‧‧Cutting Tape
圖1是適合實施本發明之加工方法所適合的晶圓之立體圖。 FIG. 1 is a perspective view of a wafer suitable for implementing the processing method of the present invention.
圖2是在貼附步驟中被貼附的晶圓、中間構件，以及支撐板的剖面圖。 2 is a cross-sectional view of a wafer, an intermediate member, and a support plate to be attached in the attaching step.
圖3(A)是在柔軟構件的全周上配置有接著構件之中間構件的平面圖，圖3(B)是在柔軟構件的外周的複數個位置處配置有接著構件之中間構件的平面圖。 FIG. 3 (A) is a plan view of an intermediate member in which a bonding member is arranged on the entire periphery of the flexible member, and FIG. 3 (B) is a plan view of an intermediate member in which the bonding member is arranged at a plurality of positions on the outer periphery of the flexible member.
圖4是實施貼附步驟後之晶圓、中間構件，以及支撐板的剖面圖。 4 is a cross-sectional view of a wafer, an intermediate member, and a support plate after the attaching step is performed.
圖5(A)是支撐板上貼附有保護膠帶之狀態的剖面圖，圖5(B)是顯示以刀具切削裝置切削保護膠帶而做成平坦化之情形的局部剖面側視圖。 FIG. 5 (A) is a cross-sectional view of a state where a protective tape is attached to a support plate, and FIG. 5 (B) is a partial cross-sectional side view showing a state where the protective tape is cut by a cutter cutting device to be flattened.
圖6是顯示磨削步驟的立體圖。 FIG. 6 is a perspective view showing a grinding step.
圖7是顯示轉移步驟的剖面圖。 Fig. 7 is a sectional view showing a transfer step.
圖8(A)、(B)是顯示剝離步驟的第1實施形態之剖面圖。 8 (A) and 8 (B) are sectional views showing the first embodiment of the peeling step.
圖9是顯示剝離步驟的第2實施形態之剖面圖。 FIG. 9 is a sectional view showing a second embodiment of the peeling step.
以下，參照圖式詳細說明本發明之實施形態。參照圖1，所示為適合以本發明之加工方法進行加工的半導體晶圓(以下有時僅簡稱為晶圓)11的立體圖。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, there is shown a perspective view of a semiconductor wafer (hereinafter sometimes simply referred to simply as a wafer) 11 suitable for processing by the processing method of the present invention.
半導體晶圓11具有表面11a及背面11b，在表面11a上將複數條切割道(分割預定線)13直交而形成，且在藉由切割道13所區劃的各區域中分別形成有元件15。半導體晶圓11是由例如厚度700μm的矽晶圓所構成。 The semiconductor wafer 11 has a front surface 11 a and a back surface 11 b. A plurality of scribe lines (planned division lines) 13 are formed perpendicularly on the surface 11 a, and elements 15 are formed in respective regions defined by the scribe lines 13. The semiconductor wafer 11 is composed of, for example, a silicon wafer having a thickness of 700 μm.
如圖1的放大圖所示，在各元件15的四邊上形成 有複數個突起狀的凸塊17。因為在各元件15的四邊上形成有凸塊17，因此半導體晶圓11具有形成有凸塊17的中央區域(凸塊形成區域)19，及圍繞中央區域19的外周剩餘區域(外周凸塊未形成區域)21。 As shown in the enlarged view of FIG. 1, formed on four sides of each element 15 There are a plurality of protruding bumps 17. Since the bumps 17 are formed on the four sides of each element 15, the semiconductor wafer 11 has a central region (bump forming region) 19 where the bumps 17 are formed, and a remaining area around the central region 19 (the outer bumps are not Formation area) 21.
參照圖2，所示為晶圓11、及貼附在晶圓11的表 面11a的支撐板12以及中間構件14之剖面圖。支撐板12是由例如矽晶圓或玻璃晶圓所構成。 Referring to FIG. 2, a wafer 11 and a table attached to the wafer 11 are shown. Sectional view of the support plate 12 and the intermediate member 14 on the surface 11a. The support plate 12 is made of, for example, a silicon wafer or a glass wafer.
再者，在晶圓11的外周部上形成有從表面到背面 的圓弧狀的倒角部11e，在後續說明的磨削步驟中，當磨削晶圓11的背面11b而將晶圓11形成為預定的厚度時，就會成為因為倒角部11e的一部分而在晶圓11的外周部形成銳利邊緣之情形。作為其對策，較理想的是，至少在實施磨削步驟前，先實施利用切削刀將晶圓11的倒角部11e的一部分去除成圓形之邊緣修整。 In addition, the outer peripheral portion of the wafer 11 is formed from the front surface to the back surface. The chamfered portion 11e having a circular arc shape will become a part of the chamfered portion 11e when the wafer 11 is formed to a predetermined thickness by grinding the back surface 11b of the wafer 11 in the grinding step described later. On the other hand, a sharp edge is formed on the outer periphery of the wafer 11. As a countermeasure for this, it is desirable to perform trimming to remove a part of the chamfered portion 11e of the wafer 11 into a circular edge by using a cutter at least before performing the grinding step.
中間構件14是由橡膠或海綿橡膠(sponge rubber) 等所形成的柔軟構件16，及配置在柔軟構件16的外周的接著構件18所構成。接著構件18的厚度t1是1~5mm，更理想的是2~3mm左右。接著構件18是由例如接著劑所形成，在稍後將說明的貼附步驟實施後，要對晶圓11進行熱處理的情況中，是選擇具有耐熱性的接著劑作為接著構件18。 The intermediate member 14 is made of rubber or sponge rubber The flexible member 16 and the like are formed, and the bonding member 18 is arranged on the outer periphery of the flexible member 16. The thickness t1 of the next member 18 is 1 to 5 mm, and more preferably about 2 to 3 mm. The next member 18 is made of, for example, an adhesive. When the wafer 11 is to be heat-treated after the attaching step to be described later, a heat-resistant adhesive is selected as the adhesive member 18.
如圖3(A)所示，中間構件14是由圓形的柔軟構件 16，與遍及柔軟構件16的整個外周而連續地配置的接著構件18所構成。或是，如圖3(B)所示，中間構件14A是由圓形的柔軟構件16，與配置在柔軟構件16的外周的複數個位置 處的接著構件18所構成。 As shown in FIG. 3 (A), the intermediate member 14 is a round flexible member 16 is constituted by a bonding member 18 that is continuously disposed over the entire periphery of the flexible member 16. Alternatively, as shown in FIG. 3 (B), the intermediate member 14A is composed of a circular flexible member 16 and a plurality of positions arranged on the outer periphery of the flexible member 16. It is composed of a bonding member 18 at the place.
在本發明的晶圓之加工方法中，準備了中間構件 14之後，如圖4所示，會實施貼附步驟，其為透過接著構件18將中間構件14貼附在支撐板12上，並且在貼附於支撐板12上的中間構件14上以使晶圓11的中央區域(凸塊形成區域)19抵接於柔軟構件16的狀態，透過接著構件18將晶圓11貼附在中間構件14。藉由實施此貼附步驟，晶圓11會成為僅透過配置在中間構件14之外周的接著構件18而被貼附在支撐板12上。 In the wafer processing method of the present invention, an intermediate member is prepared After 14, as shown in FIG. 4, an attaching step is performed, in which the intermediate member 14 is attached to the support plate 12 through the bonding member 18, and the intermediate member 14 is attached to the support plate 12 to make the crystal In a state where the center region (bump formation region) 19 of the circle 11 is in contact with the flexible member 16, the wafer 11 is attached to the intermediate member 14 through the bonding member 18. By performing this attaching step, the wafer 11 is attached to the support plate 12 only through the adhesive member 18 disposed on the outer periphery of the intermediate member 14.
較理想的是，實施磨削晶圓11的背面11b之磨削 步驟之前，為了取得晶圓11的背面11b之精密度，如圖5(A)所示，宜在支撐板12上貼附由基材與膠層所構成的膠帶20。 It is desirable to perform grinding on the back surface 11b of the wafer 11 Before the step, in order to obtain the precision of the back surface 11b of the wafer 11, as shown in FIG. 5 (A), it is preferable to attach an adhesive tape 20 composed of a base material and an adhesive layer on the support plate 12.
貼附膠帶後，是如圖5(B)所示，以刀具切削裝置 切削膠帶20而做成平坦化。在圖5(B)中，22是刀具切削裝置的刀具切削單元，包含有被旋轉驅動的主軸24、固定在主軸24的前端的安裝座26，及可裝卸地裝設在安裝座26上之刀具輪28。在刀具輪28上，於前端可裝卸地安裝有具有由鑽石所形成之刀刃的刀具工具30。 After the tape is attached, it is shown in Figure 5 (B). The tape 20 is cut to be flattened. In FIG. 5 (B), 22 is a tool cutting unit of a tool cutting device, which includes a spindle 24 that is driven to rotate, a mounting base 26 fixed to the front end of the spindle 24, and a detachably mounted base 26刀 轮 28。 Tool wheel 28. A cutter tool 30 having a cutting edge made of diamond is detachably mounted on the cutter wheel 28 at a tip end.
在膠帶20的平坦化步驟中，是以刀具切削裝置的 工作夾台32吸引保持晶圓11以使膠帶20露出。並且，在將刀具工具30定位在切入膠帶20預定深度的高度位置處之後，一邊使刀具輪28以例如約2000rpm旋轉並且使工作夾台32以預定的進給速度朝箭頭A方向移動，一邊以刀具工具30 迴轉切削膠帶20。 In the flattening step of the adhesive tape 20, The work table 32 attracts and holds the wafer 11 to expose the tape 20. Then, after positioning the cutter tool 30 at a height position where the tape 20 is cut into a predetermined depth, the cutter wheel 28 is rotated at, for example, about 2000 rpm and the work table 32 is moved in the direction of the arrow A at a predetermined feed rate. Cutting tool 30 Turn the cutting tape 20.
在此迴轉切削時，工作夾台32是在不旋轉的情形 下朝箭頭A方向加工進給。實施膠帶20的平坦化步驟後，可得到晶圓11的背面11b和膠帶20的表面之間的充分的平行度。 During this rotary cutting, the work clamp 32 is not rotated. The feed is processed downward in the direction of arrow A. After the flattening step of the adhesive tape 20 is performed, sufficient parallelism between the back surface 11 b of the wafer 11 and the surface of the adhesive tape 20 can be obtained.
然而，在已透過中間構件14將晶圓11貼附在支撐 板12上時，在可充分確保支撐板12的支撐面(下表面)與晶圓11的背面11b的平行度的情況下，就未必一定要在支撐板12上貼附膠帶20。 However, after the wafer 11 has been attached to the support through the intermediate member 14 When the plate 12 is mounted on the substrate 12, the parallelism between the support surface (lower surface) of the support plate 12 and the back surface 11 b of the wafer 11 can be ensured.
實施圖4所示之貼附步驟後，或是實施圖5(B)所 示之膠帶平坦化步驟後，可實施磨削晶圓11的背面11b之磨削步驟。在磨削步驟中，如圖6所示，是以磨削裝置的工作夾台48吸引保持支撐板12，使晶圓11的背面11b露出。 After implementing the attaching steps shown in FIG. 4, or by following the steps shown in FIG. 5 (B) After the illustrated tape flattening step, a grinding step of grinding the back surface 11b of the wafer 11 may be performed. In the grinding step, as shown in FIG. 6, the support plate 12 is sucked and held by the work table 48 of the grinding apparatus, and the back surface 11 b of the wafer 11 is exposed.
在圖6中，磨削單元36包含有被旋轉驅動的主軸 38、固定在主軸38前端的輪座40，以及藉由複數個螺絲41可裝卸地裝設在輪座40上之磨削輪42。磨削輪42是由環狀的輪基台44，以及於輪基台44的下端外周部固接成環狀的複數個磨削磨石46所構成。 In FIG. 6, the grinding unit 36 includes a spindle that is rotationally driven. 38. A wheel base 40 fixed at the front end of the main shaft 38, and a grinding wheel 42 removably mounted on the wheel base 40 by a plurality of screws 41. The grinding wheel 42 is composed of a ring-shaped wheel base 44 and a plurality of grinding stones 46 fixed to the ring at the outer peripheral portion of the lower end of the wheel base 44.
在磨削步驟中，是在使工作夾台48朝箭頭a所示 方向以例如300rpm旋轉時，使磨削輪42朝箭頭b所示方向以例如6000rpm旋轉，並且驅動圖未示的磨削單元進給機構以使磨削輪42的磨削磨石46接觸晶圓11的背面11b。 In the grinding step, the work clamp 48 is directed toward the arrow a. When the direction is rotated at, for example, 300 rpm, the grinding wheel 42 is rotated at, for example, 6000 rpm in the direction shown by arrow b, and a grinding unit feeding mechanism (not shown) is driven so that the grinding wheel 46 of the grinding wheel 42 contacts the wafer. 11 的 背 11b。 11 back.
然後，以預定的磨削進給速度使磨削輪42朝下方 磨削進給預定量。以接觸式或非接觸式的厚度測量計，一 邊測量晶圓11的厚度，一邊將晶圓11磨削至預定的厚度(例如100μm)。 Then, the grinding wheel 42 is directed downward at a predetermined grinding feed rate. The grinding feed is a predetermined amount. With contact or non-contact thickness gauges, one While measuring the thickness of the wafer 11, the wafer 11 is ground to a predetermined thickness (for example, 100 μm).
再者，此磨削步驟並不限定於圖6所示的實施形 態，也可以做成使用大約為晶圓11的半徑左右的磨削輪磨削對應於晶圓11的中央區域19之背面11b以形成圓形凹部，並使對應於外周剩餘區域21的背面殘留，而形成圍繞圓形凹部的環狀的凸部。 Moreover, this grinding step is not limited to the embodiment shown in FIG. 6 Alternatively, the back surface 11b corresponding to the central region 19 of the wafer 11 may be ground with a grinding wheel having a radius of approximately the wafer 11 to form a circular recess, and the back surface corresponding to the remaining peripheral region 21 may remain. To form a ring-shaped convex portion surrounding the circular concave portion.
實施磨削步驟後，為確保後續的操作性，較理想 的是，如圖7所示，實施將晶圓11的背面11b貼附在外周部被貼附於環狀框架F上的切割膠帶T上的轉移步驟。 After the grinding step, it is ideal to ensure subsequent operability. As shown in FIG. 7, a transfer step of attaching the back surface 11 b of the wafer 11 to the dicing tape T whose outer peripheral portion is attached to the ring frame F is performed.
實施轉移步驟後，實施從支撐板12剝離晶圓11 的剝離步驟。在此剝離步驟的第1實施形態中，如圖8(A)所示，透過切割膠帶T以圖未示的工作夾台吸引保持晶圓11，並且以切削單元50切削除去中間構件14的接著構件18。切削單元50包含有配置在鉛直方向上的主軸52，及裝設在主軸52的前端部之切削刀54。 After the transfer step is performed, the wafer 11 is peeled from the support plate 12 Stripping step. In the first embodiment of the peeling step, as shown in FIG. 8 (A), the wafer 11 is sucked and held by a work clamp (not shown) through the dicing tape T, and the bonding of the intermediate member 14 is removed by a cutting unit 50. Component 18. The cutting unit 50 includes a main shaft 52 disposed in a vertical direction, and a cutting blade 54 attached to a front end portion of the main shaft 52.
在剝離步驟的第1實施形態中，是將朝箭頭A方 向高速旋轉的切削刀54從側邊切入中間構件14的接著構件18，並藉由使圖未示的工作夾台朝箭頭R1方向低速旋轉，來切削除去接著構件18。除去接著構件18後，可如圖8(B)所示，將支撐板12與柔軟構件16一起從貼附在切割膠帶T上的晶圓11上剝離。 In the first embodiment of the peeling step, the The cutting blade 54 that rotates at a high speed cuts into the adhering member 18 of the intermediate member 14 from the side, and rotates a work clamp (not shown) at a low speed in the direction of the arrow R1 to remove the adhering member 18. After the bonding member 18 is removed, as shown in FIG. 8 (B), the support plate 12 and the flexible member 16 can be peeled from the wafer 11 attached to the dicing tape T together.
接著，參照圖9，針對剝離步驟的第2實施形態進 行說明。本實施形態的剝離步驟中，是使用具有朝水平方 向延伸的主軸52之一般的切削單元50A。 Next, referring to FIG. 9, a second embodiment of the peeling step is further developed. Line description. In the peeling step of this embodiment, A general cutting unit 50A extending toward the main shaft 52.
讓朝箭頭A方向高速旋轉的切削刀54在支撐板 12的外周部上切入到接著構件18的下端部附近，並藉由使圖未示的工作夾台朝箭頭R1方向低速旋轉，將接著構件18與支撐板12的外周部一起切削除去。 Let the cutting blade 54 rotating at high speed in the direction of arrow A rest on the support plate. The outer peripheral portion of 12 is cut into the vicinity of the lower end portion of the bonding member 18, and the work member table (not shown) is rotated at a low speed in the direction of the arrow R1 to cut and remove the bonding member 18 together with the outer peripheral portion of the support plate 12.
藉此，可以與圖8(B)所示之情形相同，將支撐板 12和柔軟構件16一起從貼附在切割膠帶T上的晶圓11上除去。 Thereby, the support plate can be similar to the situation shown in FIG. 8 (B). 12 and the flexible member 16 are removed from the wafer 11 attached to the dicing tape T.
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| JP6914587B2 (en) * | 2017-05-25 | 2021-08-04 | 株式会社ディスコ | Wafer processing method |
| DE102018200656A1 (en) | 2018-01-16 | 2019-07-18 | Disco Corporation | Method for processing a wafer |
| WO2020175364A1 (en) * | 2019-02-26 | 2020-09-03 | 株式会社ディスコ | Back grinding adhesive sheet, and method for manufacturing semiconductor wafer |
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| JP2014053351A (en) * | 2012-09-05 | 2014-03-20 | Disco Abrasive Syst Ltd | Wafer processing method |
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|---|---|
| DE102015208977A1 (en) | 2015-11-19 |
| KR20210075049A (en) | 2021-06-22 |
| JP2015220303A (en) | 2015-12-07 |
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| KR102455708B1 (en) | 2022-10-17 |
| CN105097631A (en) | 2015-11-25 |
| KR102432506B1 (en) | 2022-08-12 |
| JP6385133B2 (en) | 2018-09-05 |
| TW201606869A (en) | 2016-02-16 |
| CN105097631B (en) | 2020-10-27 |
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